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Vishay General Semiconductor - Diodes Division SMBJ8.0AHM3_B/I
- Part No.:
- SMBJ8.0AHM3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ8.0AHM3_B/I.pdf
- Description:
- 600W,8.0V 5%,UNIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:5,951
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Product details
Overview
SMBJ8.0AHM3_B/I from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in the SMB (DO-214AA) package, designed for robust overvoltage protection of sensitive electronics. It features a 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage (VBR) at 10 mA, and clamps transients to ≤13.6 V at 44.1 A peak pulse current (IPPM) under 10/1000 µs waveform - deployed on power rails and signal lines of industrial sensor interfaces.
For engineers reviewing the SMBJ8.0AHM3_B/I datasheet, SMBJ8.0AHM3_B/I pinout, SMBJ8.0AHM3_B/I application, or SMBJ8.0AHM3_B/I equivalent, this device is selected for its 600 W peak pulse power rating, AEC-Q101 qualification (HM3 suffix), halogen-free RoHS compliance, and low-clamping-voltage response to ESD and inductive switching surges in automotive and industrial control systems.
Technical Context
This unidirectional TVS operates as a voltage-clamped shunt protector: when reverse voltage exceeds VWM = 8.0 V, it avalanches into low-impedance conduction, diverting surge current away from downstream ICs. Its glass-passivated junction ensures stable breakdown characteristics and fast response time (<1 ns).
Thermal design relies on RθJA = 100 °C/W (typ.) and RθJL = 20 °C/W (typ.), with maximum junction temperature rated at +150 °C. The device is rated for 100 A non-repetitive forward surge (IFSM, 8.3 ms half-sine) and meets MSL Level 1 per J-STD-020 at 260 °C peak reflow.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM (Stand-off Voltage) | 8.0 V - Maximum continuous reverse operating voltage before significant leakage; defines safe operating margin below clamping threshold |
| VBR (Breakdown Voltage) | 8.89–9.83 V at IT = 10 mA - Confirmed avalanche initiation range; ensures reliable turn-on during transients |
| VC (Clamping Voltage) | ≤13.6 V at IPPM = 44.1 A (10/1000 µs) - Limits voltage seen by protected circuit; critical for MOSFET gate or MCU I/O survival |
| PPPM (Peak Pulse Power) | 600 W - Sustains high-energy transients (e.g., ISO 7637-2 Pulse 1/2a/5a) without failure |
| IPPM (Peak Pulse Current) | 44.1 A - Quantifies surge-handling capacity; derived from VC and PPPM (P = V × I) |
| TJmax | +150 °C - Enables operation in under-hood automotive or high-ambient industrial environments |
| Package | SMB (DO-214AA) - Standardized 2-pin SMD footprint; compatible with automated placement and reflow soldering |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, unidirectional polarity indicated by cathode band. Matte tin-plated leads, J-STD-002 solderable, MSL Level 1 compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Reverse surge return path | Connected to protected line's ground or low-side reference; completes clamping loop during transient |
| Cathode | Reverse-biased terminal / Surge current sink | Connected to protected line (e.g., 12 V rail or signal trace); conducts avalanche current when VAK > VBR |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 µs) | Withstands high-energy automotive load-dump and inductive kick events without degradation |
| AEC-Q101 qualified (HM3 suffix) | Validated for automotive-grade reliability including temperature cycling, humidity bias, and HTRB |
| Halogen-free & RoHS-compliant | Meets EU Directive 2011/65/EU and JEDEC JS709C; supports green manufacturing requirements |
| Low clamping ratio (VC/VBR ≈ 1.38) | Minimizes overvoltage stress on downstream components compared to higher-ratio TVS devices |
| Fast response time (<1 ns) | Engages before ESD or lightning-induced transients can damage CMOS inputs or analog front-ends |
Applications
| Automotive Body Control Module (BCM) | Industrial PLC Digital Input Card |
|---|---|
Use Scenario: Protects 12 V supply rail and LIN bus lines against load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Shunt-type transient suppressor placed between power rail and chassis ground; clamps surges within nanoseconds. Use Value: Prevents latch-up or permanent damage to microcontroller power domains and LIN transceivers during vehicle battery disconnection/reconnection events. |
Use Scenario: Shields 24 V DC digital input channels from inductive switching noise generated by solenoid valves and contactors. IC Role / Device Role / Timing Role: Unidirectional TVS connected across input terminals (signal-to-ground); activated only during positive-going transients. Use Value: Maintains signal integrity and prevents false triggering of optocoupler-based isolation stages in harsh factory-floor electromagnetic environments. |
| Consumer Appliance Motor Drive Board | Telecom Remote Sensor Node |
Use Scenario: Safeguards gate driver ICs and bootstrap capacitors on BLDC motor inverters from shoot-through-induced voltage spikes. IC Role / Device Role / Timing Role: Localized TVS at each half-bridge leg; clamps VDS overshoot during high-di/dt switching transitions. Use Value: Extends MOSFET lifetime and avoids gate oxide rupture by limiting transient overvoltage to <13.6 V during PWM commutation. |
Use Scenario: Guards RS-485 communication lines and microcontroller I/O pins against ESD (IEC 61000-4-2 ±8 kV contact) in outdoor metering units. IC Role / Device Role / Timing Role: Point-of-entry protection on differential bus lines; placed before TVS array or integrated transceiver. Use Value: Ensures uninterrupted data transmission by suppressing sub-100 ns ESD pulses before they couple into receiver input stages. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0AHE3_B/I | Same electrical specs; RoHS-compliant but not halogen-free; lacks AEC-Q101 qualification | Suitable for commercial/industrial use where automotive reliability is not required | Select when cost sensitivity outweighs halogen-free or automotive qualification needs |
| SMAJ8.0A-HF | Lower PPPM = 400 W; SMA (DO-214AC) package; same VWM/VC but higher RθJA = 140 °C/W | Used in space-constrained consumer PCBs where 600 W rating is not mandatory | Choose only if board layout restricts SMB footprint and surge energy is limited to ≤400 W |
Compared with SMBJ8.0AHM3_B/I, the HE3 variant trades halogen-free construction and AEC-Q101 validation for lower cost in non-automotive settings, while the SMAJ8.0A-HF reduces surge capability and thermal performance to fit smaller footprints - neither offers drop-in replacement without verifying layout, thermal margin, and qualification requirements.
Availability
SMBJ8.0AHM3_B/I is available at Aetrix Electronics and suitable for automotive body electronics, industrial programmable logic controllers, and telecom remote sensor nodes requiring stable component supply with full traceability and long-term lifecycle support.
Supply support for SMBJ8.0AHM3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-energy transient suppression in automotive, industrial, and communications infrastructure - delivering consistent clamping performance across temperature and lifetime under repetitive surge stress.
FAQ
What is the maximum clamping voltage of SMBJ8.0AHM3_B/I at its rated peak pulse current?
The SMBJ8.0AHM3_B/I has a maximum clamping voltage (VC) of 13.6 V when subjected to its rated peak pulse current (IPPM) of 44.1 A under the standard 10/1000 µs waveform. This value is measured at TA = 25 °C and confirms the device's ability to limit transient overvoltage to a safe level for downstream 3.3 V or 5 V logic circuits. The SMBJ8.0AHM3_B/I maintains this clamping performance across its specified operating temperature range.
Is SMBJ8.0AHM3_B/I suitable for automotive applications?
Yes, SMBJ8.0AHM3_B/I is AEC-Q101 qualified (denoted by the HM3 suffix), making it suitable for automotive applications including body control modules, infotainment power supplies, and ADAS sensor interfaces. Its halogen-free, RoHS-compliant construction and validated reliability under temperature cycling, humidity bias, and high-temperature reverse bias meet stringent automotive quality requirements. The SMBJ8.0AHM3_B/I is explicitly listed in Vishay's AEC-Q101 qualified product portfolio.
What does the "HM3" suffix indicate in SMBJ8.0AHM3_B/I?
Within SMBJ8.0AHM3_B/I, the "HM3" suffix denotes halogen-free, RoHS-compliant construction with AEC-Q101 qualification. "H" indicates AEC-Q101 qualification, "M" specifies halogen-free molding compound, and "3" confirms RoHS compliance per EU Directive 2011/65/EU. This distinguishes it from "E3" (RoHS only) and "HE3" (AEC-Q101 + RoHS, but not halogen-free). The SMBJ8.0AHM3_B/I thus satisfies automotive environmental and reliability mandates simultaneously.
How does SMBJ8.0AHM3_B/I differ from bidirectional TVS diodes like SMBJ8.0CA?
The SMBJ8.0AHM3_B/I is unidirectional and functions as a single-polarity clamp - conducting only during reverse overvoltage events (anode grounded, cathode to protected line). In contrast, SMBJ8.0CA is bidirectional and protects both polarities, making it suitable for AC lines or differential buses. The SMBJ8.0AHM3_B/I offers lower leakage and tighter VBR tolerance than its bidirectional counterpart, but cannot suppress negative transients without additional circuitry.
What is the thermal resistance from junction to ambient for SMBJ8.0AHM3_B/I?
The SMBJ8.0AHM3_B/I has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on the minimum recommended 0.2" × 0.2" (5.0 mm × 5.0 mm) copper pads per terminal. This value assumes standard FR-4 PCB construction and natural convection cooling. For higher-power or elevated-temperature applications, thermal relief via larger copper areas or heatsinking is advised to maintain TJ ≤ 150 °C. The SMBJ8.0AHM3_B/I also features RθJL = 20 °C/W (junction-to-lead), supporting efficient heat transfer to PCB traces.
SMBJ8.0AHM3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 13.6V
- Current - Peak Pulse (10/1000µs):
- 44.1A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ8.0AHM3_B/I FAQ
1.How can I place an order for SMBJ8.0AHM3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ8.0AHM3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ8.0AHM3_B/I reliable?
The price and inventory of SMBJ8.0AHM3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ8.0AHM3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ8.0AHM3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ8.0AHM3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ8.0AHM3_B/I?
SMBJ8.0AHM3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ8.0AHM3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ8.0AHM3_B/I?
For technical support, including SMBJ8.0AHM3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ8.0AHM3_B/I requirements.
6.How does Aetrix verify that SMBJ8.0AHM3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ8.0AHM3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ8.0AHM3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ8.0AHM3_B/I?
All SMBJ8.0AHM3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ8.0AHM3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ8.0AHM3_B/I part is unused and in its original packaging.
Return procedure for SMBJ8.0AHM3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ8.0AHM3_B/I Tags
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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