My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMBJ85CAHE3_B/I
- Part No.:
- SMBJ85CAHE3_B/I
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ85CAHE3_B/I.pdf
- Description:
- 600W,85V 5%,BIDIR,SMB TVS
- Quantity:
- Payment:
- Shipping:
Inventory:8,252
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ85CAHE3_B/I from Vishay General Semiconductor is a bidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping voltage transients on power and signal lines. It features a 85 V stand-off voltage (VWM), 94.4–104 V breakdown voltage (VBR) at 1 mA, 137 V maximum clamping voltage (VC) at 4.4 A peak pulse current (IPPM), and 600 W peak pulse power rating with 10/1000 µs waveform - used to protect MOSFETs, ICs, and sensor interfaces in industrial power supplies and telecom line cards.
For engineers reviewing the SMBJ85CAHE3_B/I datasheet, SMBJ85CAHE3_B/I pinout, SMBJ85CAHE3_B/I application, or SMBJ85CAHE3_B/I equivalent, key selection criteria include bidirectional clamping capability, AEC-Q101 qualification status, thermal resistance (RθJA = 100 °C/W), and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a voltage-clamped shunt protector: during transient overvoltage events exceeding VWM (85 V), it avalanches symmetrically in both directions to limit voltage across protected circuitry. Its glass-passivated junction ensures stable breakdown behavior and low leakage (<1.0 µA at VWM).
The device is rated for repetitive 10/1000 µs surges at 0.01% duty cycle, with thermal derating above 25 °C per Fig. 2 and peak surge current capability validated under JEDEC-standard mounting conditions (0.2" × 0.2" copper pads). Junction temperature range spans –55 °C to +150 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 85 V - maximum continuous reverse operating voltage before clamping initiates |
| VBR min/max | 94.4 V / 104 V at IT = 1 mA - guaranteed avalanche onset window defining protection threshold tolerance |
| VC @ IPPM | 137 V at 4.4 A - clamped voltage seen by downstream circuitry during worst-case 10/1000 µs transient |
| PPPM | 600 W - peak transient energy absorption capacity without failure under standardized waveform |
| ID @ VWM | ≤1.0 µA - ultra-low leakage ensuring minimal standby power loss and signal integrity |
| RθJA | 100 °C/W - thermal resistance from junction to ambient, critical for power derating in enclosed PCB layouts |
| TJ max | +150 °C - maximum junction temperature enabling operation in high-ambient industrial environments |
Pinout & Package
Package: SMB (DO-214AA), surface-mount, bidirectional configuration with no polarity marking. Dimensions: 4.57 mm × 3.94 mm × 2.20 mm (L × W × H); matte tin-plated leads compliant with J-STD-002 and JESD 22-B102.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Transient current entry (positive half-cycle) | Conducts during positive-going overvoltage; forms symmetrical clamping path with cathode |
| Cathode | Transient current entry (negative half-cycle) | Conducts during negative-going overvoltage; enables bidirectional protection without external polarity management |
Key Features
| Feature | Design Value |
|---|---|
| Bidirectional clamping | Enables single-device protection of AC-coupled or floating signal/power lines without polarity awareness |
| AEC-Q101 qualified | Validated for automotive-grade reliability including temperature cycling, humidity bias, and mechanical shock |
| 600 W peak pulse power | Withstands IEC 61000-4-5 Level 4 (4 kV) surge events when properly mounted on recommended copper pads |
| Low incremental surge resistance | Minimizes voltage overshoot during fast-rising transients (e.g., ESD, inductive switching spikes) |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns |
Applications
| Industrial Motor Drives | Telecom Line Interface Cards |
|---|---|
Use Scenario: Protection of gate drivers and feedback sensing circuits against inductive kickback from 24–48 V DC motor coils. IC Role / Device Role / Timing Role: Shunt clamping element placed across MOSFET source-drain or op-amp input nodes. Use Value: Limits transient voltage to ≤137 V, preventing latch-up or oxide breakdown in 100 V-rated silicon while maintaining <1 µA leakage at 85 V nominal bus. |
Use Scenario: Surge suppression on T1/E1 interface transformer secondaries exposed to lightning-induced surges. IC Role / Device Role / Timing Role: Bidirectional voltage clamp between differential pair and PHY IC inputs. Use Value: Symmetric clamping ensures equal protection for both polarities of AC-coupled data lines, eliminating need for dual unidirectional devices. |
| Automotive Body Control Modules | Industrial PLC Analog Input Channels |
Use Scenario: Protecting LIN bus transceivers and microcontroller GPIOs from load dump and jump-start transients. IC Role / Device Role / Timing Role: Primary overvoltage clamp on 12 V supply rail feeding CAN/LIN subsystems. Use Value: AEC-Q101 qualification confirms robustness across –40 °C to +125 °C ambient, with 150 °C TJ max supporting under-hood deployment. |
Use Scenario: Guarding 4–20 mA current loop receivers against field-wiring faults and EFT bursts. IC Role / Device Role / Timing Role: Low-leakage shunt protector placed across input terminals upstream of precision amplifier. Use Value: 1.0 µA max reverse leakage at 85 V prevents measurement error drift in µA-level analog front-ends while clamping to safe levels during 1 kV EFT events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ85CAHM3_B/I | Halogen-free, RoHS-compliant variant with identical electrical specs and AEC-Q101 qualification | No functional difference; selected where halogen-free material compliance is mandated | Direct substitution if halogen-free bill-of-materials is required |
| SMAJ85CAHE3_A/H | Lower peak pulse power (400 W vs. 600 W); SMA package (smaller footprint, higher RθJA = 150 °C/W) | Less robust for high-energy surges; limited to lower-power or space-constrained designs | Consider only when board area is critical and surge threat level is below IEC 61000-4-5 Level 3 |
Compared with SMBJ85CAHE3_B/I, the HM3 variant offers identical protection performance with halogen-free construction, while the SMAJ85CAHE3_A/H trades 33% lower pulse power and reduced thermal margin for 30% smaller PCB footprint - making SMBJ85CAHE3_B/I optimal for industrial-grade surge resilience where space permits.
Availability
SMBJ85CAHE3_B/I is available at Aetrix Electronics and suitable for industrial motor drives, telecom line interface cards, and automotive body control modules requiring stable component supply with AEC-Q101 assurance and full traceability.
Supply support for SMBJ85CAHE3_B/I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series targets high-energy transient suppression in harsh environments, engineered for robust clamping performance, automated assembly compatibility, and extended thermal survivability in automotive and industrial systems.
FAQ
What does the "CA" suffix indicate in SMBJ85CAHE3_B/I?
The "CA" suffix denotes a bidirectional configuration - meaning SMBJ85CAHE3_B/I provides symmetrical clamping for both positive and negative voltage transients without polarity dependence. This differs from unidirectional "A" variants, which require correct anode/cathode orientation and only clamp one polarity. The CA version is ideal for AC-coupled lines or floating nodes where voltage polarity reversal is possible.
Is SMBJ85CAHE3_B/I qualified for automotive use?
Yes, SMBJ85CAHE3_B/I is AEC-Q101 qualified, as confirmed by Vishay's ordering code structure ("HE3" suffix denotes RoHS-compliant and AEC-Q101 qualified grade). This qualification covers stress tests including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing - validating its suitability for automotive body electronics, infotainment power rails, and LIN/CAN node protection.
What is the maximum clamping voltage of SMBJ85CAHE3_B/I under surge conditions?
The maximum clamping voltage (VC) of SMBJ85CAHE3_B/I is 137 V, measured at its rated peak pulse current (IPPM) of 4.4 A using the 10/1000 µs waveform. This value represents the highest voltage that will appear across protected circuitry during a standardized surge event, ensuring downstream components rated for ≥150 V withstand stress without damage.
How does the SMB (DO-214AA) package of SMBJ85CAHE3_B/I compare to SMA (DO-214AC)?
The SMB package used in SMBJ85CAHE3_B/I measures 4.57 mm × 3.94 mm × 2.20 mm and delivers 600 W peak pulse power with RθJA = 100 °C/W. In contrast, the smaller SMA package (DO-214AC) supports only 400 W and has higher thermal resistance (RθJA = 150 °C/W). SMB's larger copper pad area improves heat dissipation and surge handling - making SMBJ85CAHE3_B/I more suitable for high-reliability industrial applications.
What is the reverse leakage current specification for SMBJ85CAHE3_B/I at its working voltage?
SMBJ85CAHE3_B/I exhibits a maximum reverse leakage current (ID) of 1.0 µA at its stand-off voltage (VWM) of 85 V and TA = 25 °C. This ultra-low leakage preserves signal integrity in high-impedance analog paths and minimizes standby power loss in always-on systems - critical for precision sensor interfaces and battery-backed monitoring circuits.
SMBJ85CAHE3_B/I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- -
- Bidirectional Channels:
- 1
- Voltage - Reverse Standoff (Typ):
- 85V
- Voltage - Breakdown (Min):
- 94.4V
- Voltage - Clamping (Max) @ Ipp:
- 137V
- Current - Peak Pulse (10/1000µs):
- 4.4A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ85CAHE3_B/I FAQ
1.How can I place an order for SMBJ85CAHE3_B/I through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ85CAHE3_B/I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ85CAHE3_B/I reliable?
The price and inventory of SMBJ85CAHE3_B/I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ85CAHE3_B/I is usually 5 days.
3.What payment methods are accepted for SMBJ85CAHE3_B/I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ85CAHE3_B/I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ85CAHE3_B/I?
SMBJ85CAHE3_B/I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ85CAHE3_B/I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ85CAHE3_B/I?
For technical support, including SMBJ85CAHE3_B/I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ85CAHE3_B/I requirements.
6.How does Aetrix verify that SMBJ85CAHE3_B/I is sourced from the original manufacturer or authorized distributors?
All SMBJ85CAHE3_B/I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ85CAHE3_B/I meets industry standards.
7.What is the process for return or replacement of SMBJ85CAHE3_B/I?
All SMBJ85CAHE3_B/I units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ85CAHE3_B/I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ85CAHE3_B/I part is unused and in its original packaging.
Return procedure for SMBJ85CAHE3_B/I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ85CAHE3_B/I Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
