Vishay General Semiconductor - Diodes Division SMBJ9.0AHM3/H
- Part No.:
- SMBJ9.0AHM3/H
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AA, SMB
- Datasheet:
-
SMBJ9.0AHM3/H.pdf
- Description:
- TVS DIODE 9VWM 15.4VC DO214AA
- Quantity:
- Payment:

- Shipping:

Inventory:7,281
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMBJ9.0AHM3/H from Vishay General Semiconductor is a unidirectional surface-mount transient voltage suppressor (TVS) diode in SMB (DO-214AA) package, designed for clamping fast-rising ESD and surge transients on power and signal lines. It features 9.0 V stand-off voltage (VWM), 10.0–11.1 V breakdown voltage (VBR) at 1 mA, 15.4 V maximum clamping voltage (VC) at 39.0 A peak pulse current (IPPM), and 600 W peak pulse power (10/1000 μs waveform), commonly deployed to protect MOSFET gates, microcontroller I/O pins, and sensor interfaces in industrial motor drives.
For engineers reviewing the SMBJ9.0AHM3/H datasheet, SMBJ9.0AHM3/H pinout, SMBJ9.0AHM3/H application, or SMBJ9.0AHM3/H equivalent, key selection criteria include its 9.0 V reverse stand-off rating, 15.4 V clamping performance under 39 A surge, halogen-free RoHS-compliant construction (HM3 suffix), AEC-Q101 qualification readiness, and compatibility with automated SMT placement on 0.2" × 0.2" copper pads.
Technical Context
This TVS diode operates as a unidirectional clamping device with cathode-banded polarity, leveraging a glass-passivated silicon junction for stable avalanche behavior. Its thermal resistance (RθJA = 100 °C/W) and junction temperature limit (TJ max = 150 °C) support operation in ambient environments up to +85 °C when mounted per recommended pad layout.
The SMBJ9.0AHM3/H delivers sub-nanosecond response time to transients and maintains low incremental surge resistance, enabling effective suppression of inductive switching spikes and lightning-induced surges. Its 1.0 μA maximum reverse leakage at VWM ensures minimal standby power loss in battery-backed or low-power sensor circuits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 9.0 V - Maximum continuous reverse operating voltage before clamping begins; sets safe margin below circuit supply rails. |
| VBR min/max | 10.0 V / 11.1 V at IT = 1 mA - Confirmed breakdown range ensures reliable turn-on during overvoltage events. |
| VC @ IPPM | 15.4 V at 39.0 A - Clamping voltage under standardized 10/1000 μs surge defines worst-case stress on protected ICs. |
| PPPM | 600 W - Peak pulse power handling capacity determines survivability against repetitive or single high-energy transients. |
| ID @ VWM | 1.0 μA - Reverse leakage current at stand-off voltage minimizes quiescent power drain in always-on systems. |
| TJ max | +150 °C - Maximum junction temperature enables use in under-hood automotive or enclosed industrial enclosures. |
| Package | SMB (DO-214AA) - Surface-mount outline with 0.205" × 0.130" footprint and matte tin-plated leads compliant with J-STD-002. |
Pinout & Package
Package: SMB (DO-214AA), molded case with UL 94 V-0 flammability rating; cathode indicated by band on body; terminals are matte tin-plated for solderability per J-STD-002.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Low-side reference terminal | Connected to ground or lowest potential node; completes clamping path during positive transients on cathode side. |
| Cathode | High-side surge input terminal | Banded end connects to protected line (e.g., 12 V rail or sensor output); conducts avalanche current to anode during overvoltage. |
Key Features
| Feature | Design Value |
|---|---|
| 600 W peak pulse power (10/1000 μs) | Enables robust protection against IEC 61000-4-5 Level 4 surges (4 kV line-to-earth) without degradation. |
| Halogen-free, RoHS-compliant (HM3 suffix) | Meets IPC-1752A material declaration requirements and supports green manufacturing compliance programs. |
| AEC-Q101 qualification ready | Base HM3 variant qualifies for automotive applications when ordered with revision suffix (e.g., HM3_B/H). |
| MSL Level 1 (260 °C peak reflow) | Supports single-pass lead-free reflow without moisture sensitivity concerns or baking requirements. |
| Glass passivated chip junction | Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure. |
Applications
| Industrial Motor Drives | Automotive Body Control Modules |
|---|---|
|
Use Scenario: Protection of gate drivers and feedback sensing lines against inductive kickback from relay coils and BLDC motor windings. IC Role / Device Role / Timing Role: Unidirectional TVS placed between gate driver output and MOSFET gate to clamp negative-going transients and prevent gate oxide rupture. Use Value: Limits gate-source voltage to ≤15.4 V during 39 A surge events, preserving MOSFET integrity and system uptime in factory automation PLCs. |
Use Scenario: Shielding LIN bus transceivers and door module microcontrollers from load dump and jump-start surges. IC Role / Device Role / Timing Role: Standoff-rated TVS on 12 V supply rail upstream of LDO regulators to absorb energy before it reaches sensitive logic. Use Value: Withstands 600 W pulses while maintaining 9.0 V nominal hold-off, meeting ISO 7637-2 Pulse 1/2a/5a immunity requirements in Class B modules. |
| Consumer Appliance Power Supplies | Industrial Sensor Signal Conditioning |
|
Use Scenario: Input-stage surge suppression on AC-DC adapter primary-side rectifier outputs exposed to mains-borne transients. IC Role / Device Role / Timing Role: Fast-clamping unidirectional TVS across bulk capacitor to shunt surge energy away from downstream PWM controllers. Use Value: 15.4 V clamping voltage prevents overvoltage stress on 12 V-rated control ICs during EN 61000-4-4 EFT bursts. |
Use Scenario: Protection of analog front-end inputs (e.g., 4–20 mA loop receivers or thermocouple amplifiers) from ESD and cable discharge events. IC Role / Device Role / Timing Role: Low-leakage (1.0 μA) TVS placed directly at connector interface to divert transients before signal conditioning stages. Use Value: Sub-μA leakage preserves measurement accuracy in precision instrumentation while clamping ±8 kV HBM ESD per IEC 61000-4-2. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ9.0A-E3/52 | RoHS-compliant but not halogen-free; no AEC-Q101 qualification path; same electrical specs and SMB package. | Preferred for commercial-grade consumer electronics where halogen content and automotive qualification are not required. | Select when cost sensitivity outweighs green material mandates or automotive compliance needs. |
| SMCJ9.0A-HM3 | Same VWM/VBR/VC ratings but in larger SMC (DO-214AB) package; higher RθJA (60 °C/W) and 1500 W PPPM rating. | Suitable for higher-energy surge environments (e.g., outdoor telecom power feeds) where PCB space allows larger footprint. | Choose when system-level surge testing exceeds 600 W and thermal management permits larger thermal mass. |
Compared with SMBJ9.0AHM3/H, the E3/52 variant offers identical protection performance at lower cost for non-automotive use, while the SMCJ9.0A-HM3 provides headroom for higher-energy threats at the expense of board area and thermal resistance.
Availability
SMBJ9.0AHM3/H is available at Aetrix Electronics and suitable for industrial motor drives, automotive body control modules, and consumer appliance power supplies requiring stable component supply with halogen-free and AEC-Q101-ready specifications.
Supply support for SMBJ9.0AHM3/H includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, efficiency, and application-specific optimization.
The SMBJ series is engineered for high-reliability transient suppression in space-constrained SMT designs, targeting automotive, industrial, and computing applications where consistent clamping performance and process compatibility are critical.
FAQ
What is the clamping voltage of SMBJ9.0AHM3/H under maximum rated surge current?
The SMBJ9.0AHM3/H exhibits a maximum clamping voltage (VC) of 15.4 V when subjected to its rated peak pulse current (IPPM) of 39.0 A using the standard 10/1000 μs waveform. This value is measured per Figure 1 in Vishay document 88392 and defines the upper voltage limit imposed on protected circuitry during surge events. The SMBJ9.0AHM3/H maintains this clamping performance across its qualified operating temperature range.
Is SMBJ9.0AHM3/H qualified to AEC-Q101 for automotive use?
The SMBJ9.0AHM3/H carries the HM3 suffix indicating halogen-free, RoHS-compliant construction and is built on an AEC-Q101-qualified die. When ordered with appropriate revision suffixes (e.g., _B/H), it meets AEC-Q101 stress test requirements for transient voltage suppressors. Full qualification documentation is available upon request from Vishay for the HM3-based SMBJ9.0A family.
What does the "HM3" suffix mean in SMBJ9.0AHM3/H?
The "HM3" suffix in SMBJ9.0AHM3/H denotes halogen-free, RoHS-compliant packaging and materials per IPC-1752A, with matte tin-plated leads qualified to JESD 201 Class 2 whisker resistance. It distinguishes this variant from E3 (RoHS only) and HE3/HM3 automotive variants, confirming compliance with environmental directives without compromising electrical performance.
Can SMBJ9.0AHM3/H be used in bidirectional transient protection applications?
No - SMBJ9.0AHM3/H is a unidirectional TVS diode, identifiable by its cathode band marking. For bidirectional protection, Vishay specifies the CA suffix (e.g., SMBJ9.0CA). Using SMBJ9.0AHM3/H in bidirectional configurations would result in forward conduction during negative transients, potentially damaging the device or failing to protect the circuit.
What is the thermal resistance and maximum power dissipation of SMBJ9.0AHM3/H?
The SMBJ9.0AHM3/H has a typical junction-to-ambient thermal resistance (RθJA) of 100 °C/W when mounted on 0.2" × 0.2" copper pads, and a steady-state power dissipation (PD) rating of 5.0 W at TA = 50 °C. These values define its continuous thermal limits; the device relies on short-duration pulse handling (600 W, 10/1000 μs) rather than sustained power dissipation for surge protection duty.
SMBJ9.0AHM3/H Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AA, SMB
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9V
- Voltage - Breakdown (Min):
- 10V
- Voltage - Clamping (Max) @ Ipp:
- 15.4V
- Current - Peak Pulse (10/1000µs):
- 39A
- Power - Peak Pulse:
- 600W
- Power Line Protection:
- No
- Applications:
- Telecom
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AA (SMB)
SMBJ9.0AHM3/H FAQ
1.How can I place an order for SMBJ9.0AHM3/H through Aetrix?
Please submit a Request for Quotation (RFQ) for SMBJ9.0AHM3/H on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMBJ9.0AHM3/H reliable?
The price and inventory of SMBJ9.0AHM3/H are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMBJ9.0AHM3/H is usually 5 days.
3.What payment methods are accepted for SMBJ9.0AHM3/H?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMBJ9.0AHM3/H transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMBJ9.0AHM3/H?
SMBJ9.0AHM3/H orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMBJ9.0AHM3/H order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMBJ9.0AHM3/H?
For technical support, including SMBJ9.0AHM3/H datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMBJ9.0AHM3/H requirements.
6.How does Aetrix verify that SMBJ9.0AHM3/H is sourced from the original manufacturer or authorized distributors?
All SMBJ9.0AHM3/H products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMBJ9.0AHM3/H meets industry standards.
7.What is the process for return or replacement of SMBJ9.0AHM3/H?
All SMBJ9.0AHM3/H units undergo pre-shipment inspection (PSI). If there is an issue with SMBJ9.0AHM3/H, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMBJ9.0AHM3/H part is unused and in its original packaging.
Return procedure for SMBJ9.0AHM3/H:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMBJ9.0AHM3/H Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

