Vishay General Semiconductor - Diodes Division SMCJ20HE3/9AT
- Part No.:
- SMCJ20HE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ20HE3/9AT.pdf
- Description:
- TVS DIODE 20VWM 35.8VC DO214AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,430
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ20HE3/9AT from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 20 V standoff voltage (VWM), 22.2–24.5 V breakdown range (VBR at 1 mA), 32.4 V clamping voltage (VC) at 46.3 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power rails, industrial sensor interfaces, and DC-DC converter input stages.
For engineers reviewing the SMCJ20HE3/9AT datasheet, SMCJ20HE3/9AT pinout, SMCJ20HE3/9AT application, or SMCJ20HE3/9AT equivalent, this AEC-Q101 qualified, RoHS-compliant TVS offers verified surge immunity per IEC 61000-4-5, low clamping ratio (VC/VBR ≈ 1.45), and MSL Level 1 moisture sensitivity - critical for high-reliability automotive and industrial PCB designs requiring stable transient suppression without derating penalties.
Technical Context
The SMCJ20HE3/9AT operates as a silicon avalanche diode with glass-passivated junction, delivering sub-nanosecond response to transients. Its unidirectional polarity enables integration into DC-biased lines where reverse conduction must be blocked, and its 1500 W PPPM rating supports repeated surge events under 8.3 ms half-sine wave (IFSM = 200 A) and 10/1000 µs combination wave stress.
Thermal performance is defined by RθJA = 75 °C/W (on 8.0 mm × 8.0 mm copper pads) and maximum junction temperature of +150 °C. The device meets J-STD-020 MSL Level 1 (peak reflow ≤ 260 °C) and JESD201 Class 2 whisker resistance, confirming suitability for lead-free SMT assembly in automotive-grade production.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 20 V - Maximum continuous reverse operating voltage before significant leakage; sets upper limit for protected line DC bias. |
| VBR (min/max) | 22.2 V / 24.5 V at 1 mA - Confirmed avalanche onset range; ensures predictable turn-on during fast transients. |
| VC @ IPPM | 32.4 V at 46.3 A - Clamped voltage during 1500 W surge; defines worst-case overvoltage seen by downstream ICs. |
| PPPM | 1500 W - Peak pulse power handling with 10/1000 µs waveform; validates compliance with IEC 61000-4-5 Level 4. |
| IFSM | 200 A - Non-repetitive forward surge current (8.3 ms half-sine); supports inrush and load-dump survival in 12 V automotive systems. |
| TJ max | +150 °C - Maximum junction temperature; enables operation in under-hood environments without thermal shutdown. |
| Leakage ID | 1.0 µA at 20 V - Ultra-low reverse leakage preserves battery life in always-on automotive modules. |
Pinout & Package
Package: DO-214AB (SMCJ), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002. Cathode indicated by band on body; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current entry / Surge return path | Connected to system ground or low-impedance return plane; carries full surge current during clamping. |
| Cathode | Protected line connection | Connected to line being protected (e.g., 12 V rail); avalanche conduction occurs when voltage exceeds VBR. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control units and ADAS sensors, with extended temperature cycling and humidity testing. |
| Glass-passivated junction | Ensures stable VBR and low leakage over lifetime, resisting degradation from moisture or contamination in harsh environments. |
| MSL Level 1 rating | Enables single-reflow assembly without baking; compatible with standard lead-free reflow profiles up to 260 °C peak. |
| Low incremental surge resistance | Minimizes VC overshoot during fast transients, improving protection margin for 3.3 V or 5 V logic interfaces downstream. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface |
|---|---|
Use Scenario: Protecting 12 V supply lines in engine control modules against load dump (ISO 7637-2 Pulse 5a) and alternator ripple. IC Role / Device Role / Timing Role: Unidirectional TVS placed between battery rail and DC-DC converter input to clamp surges before regulation stage. Use Value: Withstands 200 A IFSM and clamps to 32.4 V, preventing damage to buck controller ICs rated for ≤ 36 V absolute maximum. | Use Scenario: Shielding 4–20 mA current loop inputs in PLC analog I/O modules from ESD and inductive switching transients. IC Role / Device Role / Timing Role: Placed across loop terminals to shunt fast transients while maintaining < 1 µA leakage at 24 V nominal. Use Value: 1.0 µA leakage at VWM avoids measurement error; 1500 W PPPM handles repetitive 1 kV/500 A surge events per IEC 61000-4-4. |
| DC-DC Converter Input Stage | Automotive Infotainment USB Power |
Use Scenario: Input protection for 24 V-to-5 V isolated flyback converters in commercial vehicle telematics units. IC Role / Device Role / Timing Role: First-line defense upstream of input capacitor and primary-side controller, absorbing energy before filtering. Use Value: 75 °C/W RθJA allows thermal design with minimal copper area; 32.4 V clamping prevents overvoltage stress on MOSFET gate drivers. | Use Scenario: Overvoltage suppression on 5 V USB VBUS lines in automotive head units exposed to hot-swap and cable discharge events. IC Role / Device Role / Timing Role: Unidirectional clamp referenced to ground, blocking reverse current while clamping positive surges above 5.5 V. Use Value: VWM = 20 V provides ample margin above 5 V rail; AEC-Q101 qualification ensures reliability across -40 °C to +125 °C ambient. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SAC20-13-F | Same VWM (20 V), lower PPPM (600 W), TO-220AC package | Requires heatsink for >100 W surges; not surface-mountable | Select when higher thermal mass is needed and board space permits through-hole mounting. |
| SMCJ20A-E3/9AT | Identical electrical specs and DO-214AB package; differs only in qualification level (commercial vs. AEC-Q101) | No automotive qualification; not validated for temperature cycling or humidity exposure per AEC standards | Choose SMCJ20HE3/9AT for automotive OEM programs; use SMCJ20A-E3/9AT for cost-sensitive industrial prototypes. |
Compared with SAC20-13-F and SMCJ20A-E3/9AT, the SMCJ20HE3/9AT uniquely combines AEC-Q101 qualification, 1500 W surge capability, and SMT compatibility - enabling drop-in deployment in automotive ECUs without layout changes or thermal derating.
Availability
SMCJ20HE3/9AT is available at Aetrix Electronics and suitable for automotive power rail protection, industrial sensor interface hardening, and DC-DC converter input stage surge suppression requiring stable component supply across multi-year production cycles.
Supply support for SMCJ20HE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, and protection devices with emphasis on reliability, precision, and automotive-grade validation.
The SMCJ series was engineered specifically for high-energy transient suppression in automotive and industrial environments, balancing clamping performance, thermal robustness, and AEC-Q101 compliance in compact SMT packages.
FAQ
What is the clamping voltage of the SMCJ20HE3/9AT under maximum surge conditions?
The SMCJ20HE3/9AT has a maximum clamping voltage (VC) of 32.4 V at 46.3 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured per ANSI/IEEE C62.35 and defines the upper voltage limit imposed on protected circuitry during a 1500 W transient event. The SMCJ20HE3/9AT maintains this clamping performance across its full operating temperature range (-55 °C to +150 °C).
Is the SMCJ20HE3/9AT suitable for automotive applications?
Yes, the SMCJ20HE3/9AT is AEC-Q101 qualified and explicitly rated for automotive use, including engine control, infotainment, and ADAS subsystems. Its qualification covers temperature cycling, humidity testing, and mechanical shock per AEC standards. The SMCJ20HE3/9AT also meets J-STD-020 MSL Level 1 and JESD201 Class 2 whisker resistance, making it suitable for lead-free reflow in automotive manufacturing.
How does the SMCJ20HE3/9AT differ from the commercial-grade SMCJ20A-E3/9AT?
The SMCJ20HE3/9AT and SMCJ20A-E3/9AT share identical electrical specifications and DO-214AB packaging, but differ in qualification: SMCJ20HE3/9AT is AEC-Q101 qualified, while SMCJ20A-E3/9AT is commercial grade. The HE3 suffix indicates enhanced reliability testing for automotive environments, including extended temperature cycling and humidity exposure - critical for SMCJ20HE3/9AT deployment in OEM production.
What is the maximum reverse leakage current of the SMCJ20HE3/9AT at its standoff voltage?
The SMCJ20HE3/9AT exhibits a maximum reverse leakage current (ID) of 1.0 µA at its 20 V standoff voltage (VWM) and 25 °C ambient temperature. This ultra-low leakage ensures minimal power loss in always-on automotive modules and preserves accuracy in precision sensor signal paths where leakage could introduce offset errors.
Can the SMCJ20HE3/9AT be used in bi-directional protection circuits?
No, the SMCJ20HE3/9AT is a unidirectional TVS diode, indicated by the "A" suffix (not "CA"). It conducts only in reverse bias above VBR and blocks forward current - making it unsuitable for AC or bidirectional signal lines. For bi-directional protection at 20 V, the correct variant is SMCJ20CA; using SMCJ20HE3/9AT in such applications would fail to suppress positive transients on grounded references.
SMCJ20HE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 20V
- Voltage - Breakdown (Min):
- 22.2V
- Voltage - Clamping (Max) @ Ipp:
- 35.8V
- Current - Peak Pulse (10/1000µs):
- 41.9A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ20HE3/9AT FAQ
1.How can I place an order for SMCJ20HE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ20HE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ20HE3/9AT reliable?
The price and inventory of SMCJ20HE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ20HE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ20HE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ20HE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ20HE3/9AT?
SMCJ20HE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ20HE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ20HE3/9AT?
For technical support, including SMCJ20HE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ20HE3/9AT requirements.
6.How does Aetrix verify that SMCJ20HE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ20HE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ20HE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ20HE3/9AT?
All SMCJ20HE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ20HE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ20HE3/9AT part is unused and in its original packaging.
Return procedure for SMCJ20HE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ20HE3/9AT Tags

-
ESD9B5.0ST5G
onsemi

-
DESD3V3E1BL-7B
Diodes Incorporated

-
ESD5Z3.3T1G
onsemi

-
D5V0H1B2LP-7B
Diodes Incorporated

-
D5V0P1B2LP-7B
Diodes Incorporated

-
DESD5V0U1BA-7
Diodes Incorporated

-
ESD5Z5.0T1G
onsemi

-
DESD5V0U1BB-7
Diodes Incorporated

-
D12V0L1B2LP-7B
Diodes Incorporated

-
PESD2V0Y1BSFYL
Nexperia USA Inc.

-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage

-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

