My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMCJ30AHE3/57T
- Part No.:
- SMCJ30AHE3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ30AHE3/57T.pdf
- Description:
- TVS DIODE 30VWM 48.4VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:4,269
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ30AHE3/57T from Vishay General Semiconductor is a unidirectional transient voltage suppressor (TVS) diode in SMC (DO-214AB) package, designed for robust overvoltage protection of DC power rails and signal lines. It features a 30 V standoff voltage (VWM), 33.3–36.8 V breakdown range at 1 mA, 48.4 V clamping voltage at 31 A peak pulse current, and 1500 W peak pulse power rating with 10/1000 µs waveform - deployed in automotive power electronics, industrial sensor interfaces, and telecom surge protection circuits.
For engineers reviewing the SMCJ30AHE3/57T datasheet, SMCJ30AHE3/57T pinout, SMCJ30AHE3/57T application, or SMCJ30AHE3/57T equivalent, key selection criteria include unidirectional polarity, AEC-Q101 qualification, 1500 W surge capability, low clamping ratio (VC/VWM ≈ 1.61), and compatibility with automated SMT assembly on standard PCB pad layouts.
Technical Context
The SMCJ30AHE3/57T operates as a silicon avalanche diode with glass-passivated junction, delivering sub-nanosecond response to transients. Its unidirectional configuration enables cathode-referenced clamping on positive-going surges, while its low incremental surge resistance ensures minimal voltage overshoot during high-current events.
Thermally, it supports operation from −55 °C to +150 °C junction temperature, with RθJA = 75 °C/W (typ.) and RθJL = 15 °C/W (typ.), enabling reliable performance under pulsed load conditions when mounted on 8.0 mm × 8.0 mm copper pads per terminal.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 30 V - Maximum continuous reverse operating voltage before clamping begins; defines safe DC rail margin for 24 V systems. |
| VBR @ IT = 1 mA | 33.3–36.8 V - Measured breakdown range confirming tight tolerance for predictable turn-on behavior. |
| VC @ IPPM = 31 A | 48.4 V - Clamped voltage during 10/1000 µs surge; limits downstream IC stress to ≤48.4 V. |
| PPPM | 1500 W - Peak pulse power handling capacity; sustains 31 A surge without failure per JEDEC standards. |
| IFSM | 200 A - Non-repetitive forward surge current rating (8.3 ms half-sine); supports inrush and fault-current events. |
| TJ max. | +150 °C - Maximum junction temperature; enables use in under-hood automotive and high-ambient industrial environments. |
| AEC-Q101 | Qualified - Validated for automotive-grade reliability including temperature cycling, HTRB, and ESD testing. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Cathode indicated by band marking; polarity-critical for unidirectional operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry point during forward conduction | Connected to protected line's lower-potential side (e.g., GND or return path) in clamping configuration. |
| Cathode | Current exit point during reverse-biased clamping | Connected to protected line's higher-potential side (e.g., 24 V rail); band-marked end determines orientation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control units, body electronics, and ADAS sensors. |
| Glass passivated junction | Enhances long-term stability and moisture resistance versus epoxy-passivated alternatives. |
| Low clamping ratio (VC/VWM = 1.61) | Minimizes overvoltage exposure to downstream MOSFETs, MCUs, and CAN transceivers during surge events. |
| MSL Level 1 (260 °C peak) | Enables single-reflow soldering without moisture sensitivity concerns or baking requirements. |
| 1500 W peak pulse power | Meets ISO 7637-2 Pulse 1/2a/5a and IEC 61000-4-5 Level 4 surge immunity requirements. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Interface Protection |
|---|---|
|
Use Scenario: Protecting 24 V supply inputs in engine control modules against load dump and inductive switching transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between battery rail and DC-DC input stage. Use Value: Limits voltage to ≤48.4 V during 31 A surges, preventing damage to LDOs and microcontrollers rated for 40 V absolute maximum. |
Use Scenario: Safeguarding analog output lines (e.g., 4–20 mA current loops) in factory automation sensors exposed to ESD and cable discharge. IC Role / Device Role / Timing Role: Reverse-biased clamping element across signal and return paths to shunt fast transients. Use Value: Responds in <1 ns to ±8 kV contact ESD (IEC 61000-4-2), maintaining signal integrity without latch-up or parametric shift. |
| Telecom DC Feeder Protection | Motor Drive Gate Driver Protection |
|
Use Scenario: Shielding PoE-powered equipment front-end rectifiers and DC-DC converters from lightning-induced surges on Ethernet cables. IC Role / Device Role / Timing Role: Primary-level TVS on 48 V DC input bus upstream of isolation and regulation stages. Use Value: Absorbs 1500 W pulses per IEC 61000-4-5 (10/1000 µs), reducing need for multi-stage protection and saving board space. |
Use Scenario: Protecting high-side and low-side gate drivers in BLDC motor inverters from Miller-induced voltage spikes during switching. IC Role / Device Role / Timing Role: Localized clamping diode across driver VDD-to-GND pins near gate driver IC. Use Value: Clamps transient overshoot to 48.4 V within nanoseconds, preventing false turn-on and gate oxide breakdown in 600 V Si MOSFETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SAC30-015 | Lower PPPM (600 W), smaller SMA package, VC = 49.5 V at 12.5 A | Targeted at cost-sensitive consumer electronics; insufficient for automotive load dump compliance. | Select only for non-automotive 24 V systems with lower surge energy requirements. |
| 1.5KE30A | Through-hole DO-201 package, same VWM/VC, but slower thermal response and no AEC-Q101 qualification | Legacy industrial designs where reworkability and manual assembly are prioritized over automotive reliability. | Choose only if SMT assembly is unavailable or board redesign for surface-mount is prohibitive. |
Compared with SAC30-015 and 1.5KE30A, the SMCJ30AHE3/57T delivers superior surge robustness (1500 W vs. 600 W/1500 W), automotive qualification, and optimized SMT manufacturability - making it the preferred choice for new automotive and industrial designs requiring AEC-Q101 compliance and high-energy transient immunity.
Availability
SMCJ30AHE3/57T is available at Aetrix Electronics and suitable for automotive ECUs, industrial PLC I/O modules, telecom power supplies, and motor drive gate driver circuits requiring stable component supply and AEC-Q101 traceability.
Supply support for SMCJ30AHE3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The SMCJ series is part of Vishay's TRANSZORB® TVS platform, engineered specifically for high-energy transient suppression in automotive, industrial, and telecom infrastructure where AEC-Q101 validation and 1500 W surge capability are mandatory.
FAQ
What is the clamping voltage of the SMCJ30AHE3/57T at its rated peak pulse current?
The SMCJ30AHE3/57T has a maximum clamping voltage (VC) of 48.4 V at 31 A peak pulse current (IPPM) with a 10/1000 µs waveform. This value is measured under standardized test conditions and defines the upper voltage limit imposed on protected circuitry during surge events. The SMCJ30AHE3/57T maintains this clamping performance across its full operating temperature range, ensuring consistent protection in demanding environments.
Is the SMCJ30AHE3/57T qualified for automotive applications?
Yes, the SMCJ30AHE3/57T carries AEC-Q101 qualification, verified through rigorous stress testing including temperature cycling, high-temperature reverse bias, and ESD. Its HE3 suffix explicitly denotes RoHS-compliant and AEC-Q101-qualified construction. The SMCJ30AHE3/57T is routinely deployed in engine control units, body control modules, and ADAS sensor power rails where automotive-grade reliability is required.
What does the "HE3/57T" suffix indicate in SMCJ30AHE3/57T?
The "HE3" suffix identifies the SMCJ30AHE3/57T as RoHS-compliant and AEC-Q101-qualified, distinguishing it from commercial-grade E3 or M3 variants. The "57T" denotes packaging in 7-inch plastic tape-and-reel format with 850 units per reel - optimized for high-volume SMT placement. This ordering code ensures traceability, controlled moisture sensitivity level (MSL 1), and compatibility with standard pick-and-place equipment used in automotive electronics manufacturing.
How does the SMCJ30AHE3/57T compare to bidirectional TVS diodes like SMCJ30CA?
The SMCJ30AHE3/57T is unidirectional and intended for DC rail protection where polarity is fixed (e.g., 24 V to GND), offering tighter leakage control and slightly lower VC than its bidirectional counterpart SMCJ30CA. The SMCJ30CA supports AC or floating-line protection but exhibits higher reverse leakage above VWM. For 24 V automotive power inputs, the SMCJ30AHE3/57T provides superior efficiency and lower standby loss compared to SMCJ30CA.
What thermal derating applies to the SMCJ30AHE3/57T above 25 °C ambient?
The SMCJ30AHE3/57T follows standard derating curves per Figure 2 in its datasheet: peak pulse power (PPPM) decreases linearly above 25 °C ambient, reaching ~75 % of 1500 W at 75 °C and ~50 % at 125 °C. Derating is based on junction-to-ambient thermal resistance (RθJA = 75 °C/W typ.) and assumes mounting on 8.0 mm × 8.0 mm copper pads. The SMCJ30AHE3/57T remains fully functional up to +150 °C junction temperature, with no permanent degradation below that limit.
SMCJ30AHE3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Discontinued at Digi-Key
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 30V
- Voltage - Breakdown (Min):
- 33.3V
- Voltage - Clamping (Max) @ Ipp:
- 48.4V
- Current - Peak Pulse (10/1000µs):
- 31A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ30AHE3/57T FAQ
1.How can I place an order for SMCJ30AHE3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ30AHE3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ30AHE3/57T reliable?
The price and inventory of SMCJ30AHE3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ30AHE3/57T is usually 5 days.
3.What payment methods are accepted for SMCJ30AHE3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ30AHE3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ30AHE3/57T?
SMCJ30AHE3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ30AHE3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ30AHE3/57T?
For technical support, including SMCJ30AHE3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ30AHE3/57T requirements.
6.How does Aetrix verify that SMCJ30AHE3/57T is sourced from the original manufacturer or authorized distributors?
All SMCJ30AHE3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ30AHE3/57T meets industry standards.
7.What is the process for return or replacement of SMCJ30AHE3/57T?
All SMCJ30AHE3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ30AHE3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ30AHE3/57T part is unused and in its original packaging.
Return procedure for SMCJ30AHE3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ30AHE3/57T Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
