My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMCJ8.0A-E3/57T
- Part No.:
- SMCJ8.0A-E3/57T
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ8.0A-E3/57T.pdf
- Description:
- TVS DIODE 8VWM 13.6VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:7,563
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ8.0A-E3/57T from Vishay General Semiconductor is a unidirectional surface-mount Transient Voltage Suppressor (TVS) diode in SMC (DO-214AB) package, designed for clamping voltage transients on power and signal lines. It features a 8.0 V stand-off voltage (VWM), 8.89–9.83 V breakdown voltage at 10 mA (VBR), 13.6 V maximum clamping voltage at 110.3 A peak pulse current (VC), and 1500 W peak pulse power rating with 10/1000 μs waveform.
For engineers reviewing the SMCJ8.0A-E3/57T datasheet, SMCJ8.0A-E3/57T pinout, SMCJ8.0A-E3/57T application, or SMCJ8.0A-E3/57T equivalent, key selection criteria include clamping performance under 110 A surge, thermal resistance (RθJA = 75 °C/W), RoHS-compliant matte tin plating, and compatibility with automated SMT placement on 8.0 mm × 8.0 mm copper pads.
Technical Context
The SMCJ8.0A-E3/57T operates as a unidirectional avalanche diode, conducting only when reverse voltage exceeds its breakdown threshold (VBR min 8.89 V). Its glass-passivated junction ensures stable leakage (<50 μA at VWM) and fast response time (<1.0 ps), enabling protection of downstream ICs and MOSFETs against ESD and inductive switching spikes.
It is rated for -55 °C to +150 °C operating junction temperature, meets MSL Level 1 per J-STD-020 (260 °C reflow peak), and supports surge currents up to 200 A (8.3 ms half-sine) without degradation-critical for automotive and industrial power rail protection where transient energy exceeds 100 mJ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 8.0 V - Maximum continuous reverse working voltage before clamping begins; sets safe operating margin below circuit supply rails. |
| VBR (min/max) | 8.89 V / 9.83 V at 10 mA - Confirmed breakdown range ensures reliable turn-on during overvoltage events without premature conduction. |
| VC @ IPPM | 13.6 V at 110.3 A - Clamping voltage limits stress on protected devices; enables safe operation of 12 V systems during 1500 W transients. |
| PPPM | 1500 W - Peak pulse power handling with 10/1000 μs waveform defines maximum transient energy absorption capability. |
| ID @ VWM | ≤50 μA - Low reverse leakage preserves signal integrity and minimizes standby power loss in always-on circuits. |
| RθJA | 75 °C/W - Thermal resistance determines required PCB copper area (0.31" × 0.31") for sustained 6.5 W power dissipation at TA = 50 °C. |
| Polarity | Unidirectional - Cathode marked by band; blocks forward current, conducts only during reverse overvoltage events. |
Pinout & Package
Package: SMC (DO-214AB), surface-mount, low-profile case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Dimensions: 7.11 mm × 6.22 mm × 2.62 mm (L × W × H); cathode indicated by molded band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current path terminal | Connected to lower-potential side (e.g., ground or return path); carries surge current during clamping. |
| Cathode | Reverse-biased clamping terminal | Marked by band; connected to protected line (e.g., 12 V rail); initiates avalanche conduction above VBR. |
Key Features
| Feature | Design Value |
|---|---|
| Low incremental surge resistance | Enables tight clamping (VC = 13.6 V) even at high IPPM = 110.3 A, minimizing voltage overshoot on sensitive loads. |
| Glass passivated chip junction | Ensures long-term stability of VBR and leakage across temperature (-55 °C to +150 °C) and lifetime cycling. |
| MSL Level 1 compliance | Supports standard SMT reflow profiles up to 260 °C peak without moisture-induced damage or popcorn effect. |
| RoHS-compliant, commercial grade | E3 suffix confirms lead-free matte tin plating and compliance with EU RoHS Directive 2011/65/EU for industrial applications. |
| Automated placement optimized | Standard SMC footprint and coplanar leads ensure high-yield pick-and-place assembly on high-volume production lines. |
Applications
| Automotive Power Rail Protection | Industrial Sensor Signal Line Protection |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump (ISO 7637-2 Pulse 5a) and alternator transients. IC Role / Device Role / Timing Role: Unidirectional TVS clamping device placed between power input and local regulator/filter stage. Use Value: Limits transient voltage to ≤13.6 V during 110 A surges, preventing latch-up or gate oxide damage in downstream PMICs and microcontrollers. | Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) from ESD and cable discharge events in factory automation. IC Role / Device Role / Timing Role: Point-of-entry TVS on differential or single-ended signal traces before ADC input or op-amp buffer. Use Value: Sub-50 μA leakage at 8.0 V preserves signal accuracy; fast response prevents ESD-induced data corruption in 10-bit+ measurement systems. |
| Consumer USB Power Input Protection | Telecom DC Feeder Line Protection |
Use Scenario: Safeguarding USB-C PD power delivery circuits against hot-plug surges and adapter faults. IC Role / Device Role / Timing Role: Primary clamping element on VBUS line upstream of buck converter and load switch. Use Value: 1500 W PPPM rating handles worst-case 20 V × 75 A transients; 13.6 V VC ensures USB PD controller remains within absolute max ratings. | Use Scenario: Protecting PoE-powered equipment (e.g., IP cameras, access points) from lightning-induced surges on 48 V DC feeder lines. IC Role / Device Role / Timing Role: Secondary-level TVS on DC input after primary gas discharge tube (GDT) or MOV. Use Value: Tight VBR tolerance (±5.3%) and low RθJA enable coordinated clamping with upstream protectors while maintaining thermal safety at 48 V nominal. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMBJ8.0A-E3/52T | Lower PPPM (600 W), smaller SMB (DO-214AA) package, same VWM/VBR/VC specs | Not suitable for 1500 W transients; limited to lower-energy threats like IEC 61000-4-2 ESD | Select only when board space is constrained and surge energy is <600 W. |
| SMCJ8.0CA-E3/57T | Bidirectional variant; identical VWM/VBR/VC but symmetrical clamping in both polarities | Required for AC-coupled or floating signal lines (e.g., RS-485, CAN bus) where polarity reversal occurs | Choose when protecting bidirectional interfaces; not interchangeable with unidirectional SMCJ8.0A-E3/57T without circuit redesign. |
Compared with SMBJ8.0A-E3/52T and SMCJ8.0CA-E3/57T, the SMCJ8.0A-E3/57T uniquely delivers 1500 W surge capacity in a unidirectional configuration-making it optimal for high-energy 12 V/24 V DC power rail protection where polarity is fixed and clamping headroom must be minimized.
Availability
SMCJ8.0A-E3/57T is available at Aetrix Electronics and suitable for automotive ECU power conditioning, industrial sensor interface design, and telecom DC feeder protection requiring stable component supply and full traceability.
Supply support for SMCJ8.0A-E3/57T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, rectifiers, MOSFETs, and protection devices with emphasis on reliability, thermal performance, and AEC-Q qualification.
The SMCJ series is engineered for high-energy transient suppression in harsh environments-targeting automotive, industrial, and telecom applications where robustness against ISO 7637, IEC 61000-4-5, and lightning-induced surges is mandatory.
FAQ
What is the maximum clamping voltage of the SMCJ8.0A-E3/57T under specified test conditions?
The SMCJ8.0A-E3/57T has a maximum clamping voltage (VC) of 13.6 V when subjected to its rated peak pulse current (IPPM) of 110.3 A using a 10/1000 μs waveform. This value is measured at the device terminals under standardized test conditions defined in ANSI/IEEE C62.35 and confirmed in Vishay's Document Number 88394. The SMCJ8.0A-E3/57T maintains this clamping performance across its operational temperature range.
Is the SMCJ8.0A-E3/57T suitable for automotive applications requiring AEC-Q101 qualification?
No-the SMCJ8.0A-E3/57T is a commercial-grade part with E3 suffix (RoHS-compliant, non-automotive). For AEC-Q101 qualification, the correct variant is SMCJ8.0AHE3_X (e.g., SMCJ8.0AHE3_A), which carries the HE3 suffix and is explicitly tested per AEC-Q101. The SMCJ8.0A-E3/57T lacks the automotive qualification documentation and stress test validation required for under-hood or safety-critical vehicle systems.
What is the thermal resistance and recommended PCB layout for reliable operation of the SMCJ8.0A-E3/57T?
The SMCJ8.0A-E3/57T has a typical junction-to-ambient thermal resistance (RθJA) of 75 °C/W when mounted on minimum recommended 0.31" × 0.31" (8.0 mm × 8.0 mm) copper pads per terminal. To sustain its 6.5 W power dissipation at TA = 50 °C, designers must implement these pad dimensions with internal or external thermal vias. The SMCJ8.0A-E3/57T datasheet specifies this layout in Figure 2 and Package Outline Drawing on page 5.
How does the SMCJ8.0A-E3/57T differ from the SMBJ8.0A-E3/52T in terms of surge handling capability?
The SMCJ8.0A-E3/57T delivers 1500 W peak pulse power (PPPM), whereas the SMBJ8.0A-E3/52T is rated for only 600 W-2.5× less energy absorption. This difference stems from the larger SMC (DO-214AB) package of the SMCJ8.0A-E3/57T versus the smaller SMB (DO-214AA) of the SMBJ8.0A-E3/52T. Both share identical VWM (8.0 V) and VC (13.6 V), but the SMCJ8.0A-E3/57T is required for ISO 7637-2 Pulse 5a or IEC 61000-4-5 Level 4 compliance where higher surge currents occur.
Can the SMCJ8.0A-E3/57T be used in bidirectional signal protection applications such as RS-485 or CAN bus?
No-the SMCJ8.0A-E3/57T is unidirectional and will conduct only during reverse overvoltage events; it cannot clamp positive-going transients on floating or AC-coupled lines. For bidirectional protection, the SMCJ8.0CA-E3/57T must be used instead. That variant provides symmetrical clamping in both directions with identical VBR and VC specs. Using the SMCJ8.0A-E3/57T in such applications risks permanent damage due to forward conduction during normal signal swings.
SMCJ8.0A-E3/57T Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8V
- Voltage - Breakdown (Min):
- 8.89V
- Voltage - Clamping (Max) @ Ipp:
- 13.6V
- Current - Peak Pulse (10/1000µs):
- 110.3A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ8.0A-E3/57T FAQ
1.How can I place an order for SMCJ8.0A-E3/57T through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ8.0A-E3/57T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ8.0A-E3/57T reliable?
The price and inventory of SMCJ8.0A-E3/57T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ8.0A-E3/57T is usually 5 days.
3.What payment methods are accepted for SMCJ8.0A-E3/57T?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ8.0A-E3/57T transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ8.0A-E3/57T?
SMCJ8.0A-E3/57T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ8.0A-E3/57T order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ8.0A-E3/57T?
For technical support, including SMCJ8.0A-E3/57T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ8.0A-E3/57T requirements.
6.How does Aetrix verify that SMCJ8.0A-E3/57T is sourced from the original manufacturer or authorized distributors?
All SMCJ8.0A-E3/57T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ8.0A-E3/57T meets industry standards.
7.What is the process for return or replacement of SMCJ8.0A-E3/57T?
All SMCJ8.0A-E3/57T units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ8.0A-E3/57T, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ8.0A-E3/57T part is unused and in its original packaging.
Return procedure for SMCJ8.0A-E3/57T:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ8.0A-E3/57T Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
