My Inquiry
My Account
Vishay General Semiconductor - Diodes Division SMCJ9.0HE3/9AT
- Part No.:
- SMCJ9.0HE3/9AT
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Category:
- TVS Diodes
- Package:
- DO-214AB, SMC
- Datasheet:
-
SMCJ9.0HE3/9AT.pdf
- Description:
- TVS DIODE 9VWM 16.9VC DO214AB
- Quantity:
- Payment:
- Shipping:
Inventory:5,981
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMCJ9.0HE3/9AT from Vishay is a unidirectional transient voltage suppressor (TVS) diode in DO-214AB (SMCJ) package, designed for robust overvoltage protection of sensitive electronics. It features a 9.0 V stand-off voltage (VWM), 15.4 V maximum clamping voltage (VC) at 97.4 A peak pulse current (IPPM), and 1500 W peak pulse power (10/1000 µs waveform), making it suitable for automotive power line and industrial sensor interface protection.
For engineers reviewing the SMCJ9.0HE3/9AT datasheet, SMCJ9.0HE3/9AT pinout, SMCJ9.0HE3/9AT application, or SMCJ9.0HE3/9AT equivalent, key selection criteria include its AEC-Q101 qualification, 1.0 µA max reverse leakage at VWM, 10.0–11.1 V breakdown range (VBR), and DO-214AB thermal performance with RθJA = 75 °C/W - critical for high-reliability 12 V rail surge suppression.
Technical Context
The SMCJ9.0HE3/9AT operates as a unidirectional avalanche diode, triggered when reverse voltage exceeds its specified VBR (10.0–11.1 V at 1.0 mA test current). Its glass-passivated junction ensures stable breakdown characteristics and low incremental surge resistance, enabling consistent clamping under repetitive transients.
Designed for surface-mount placement on 8.0 mm × 8.0 mm copper pads, it delivers 1500 W peak pulse power handling per JEDEC-standard 10/1000 µs waveform while maintaining junction temperatures ≤150 °C. The HE3 suffix confirms AEC-Q101 qualification and JESD 201 Class 2 whisker resistance, targeting automotive-grade reliability.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VWM | 9.0 V - Maximum continuous reverse operating voltage before conduction begins; sets protection threshold for 12 V nominal systems. |
| VBR min/max | 10.0 V / 11.1 V at 1.0 mA - Confirmed breakdown range ensures reliable turn-on without premature triggering. |
| VC @ IPPM | 15.4 V at 97.4 A - Clamped voltage during 1500 W transient; defines worst-case stress on downstream ICs. |
| IPPM | 97.4 A - Peak surge current capability under standard 10/1000 µs waveform; validates protection against ISO 7637-2 Pulse 1/2a/5a. |
| PPPM | 1500 W - Peak pulse power rating; enables single-device protection for high-energy automotive load dump events. |
| TJ max | +150 °C - Maximum junction temperature; supports operation in under-hood environments with minimal derating. |
| RθJA | 75 °C/W - Thermal resistance to ambient on recommended pad layout; informs heatsinking requirements for sustained surge duty. |
Pinout & Package
Package: DO-214AB (SMCJ), surface-mount, molded plastic case with matte tin-plated leads solderable per J-STD-002 and JESD 22-B102. Polarity marked by cathode band on one end.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward current path / low-side reference | Connected to system ground or lower-potential node; conducts during forward-biased ESD events or fault conditions. |
| Cathode (banded end) | Reverse-biased protection node | Connected to protected line (e.g., 12 V supply); avalanches into conduction when VAK > VBR, shunting surge current to ground. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control units and body electronics per stress test requirements. |
| Glass passivated junction | Ensures stable VBR tolerance and long-term reliability under thermal cycling and humidity exposure. |
| Low incremental surge resistance | Minimizes VC overshoot during fast-rising transients (e.g., ISO 10605 ESD), improving clamping precision. |
| MSL Level 1 (260 °C peak) | Compatible with standard lead-free reflow profiles without moisture sensitivity concerns. |
| RoHS-compliant HE3 suffix | Meets JESD 201 Class 2 whisker resistance, eliminating tin whisker risk in high-vibration automotive assemblies. |
Applications
| Automotive Power Line Protection | Industrial Sensor Interface |
|---|---|
Use Scenario: Protecting 12 V battery-fed ECUs from load dump and alternator transients per ISO 7637-2. IC Role / Device Role / Timing Role: Unidirectional TVS placed between power rail and chassis ground to clamp surges above 13.5 V. Use Value: Limits peak voltage to 15.4 V during 1500 W transients, preventing damage to MCU power supplies and CAN transceivers. | Use Scenario: Shielding analog sensor outputs (e.g., pressure, temperature) from ESD and inductive switching noise in factory automation. IC Role / Device Role / Timing Role: Low-capacitance TVS on signal lines referenced to local ground, suppressing ±8 kV contact ESD per IEC 61000-4-2. Use Value: 1.0 µA leakage at 9.0 V ensures minimal impact on mV-level sensor accuracy while providing sub-ns response to transients. |
| Telecom DC Power Input | Consumer Device USB Port Protection |
Use Scenario: Safeguarding PoE-powered equipment inputs against lightning-induced surges on 48 V DC lines. IC Role / Device Role / Timing Role: Primary-stage TVS on input rail, coordinated with upstream fuses and secondary filtering. Use Value: 1500 W rating handles high-energy common-mode surges; DO-214AB package supports automated placement in high-volume telecom modules. | Use Scenario: Adding robust overvoltage immunity to USB VBUS lines in portable audio/video devices. IC Role / Device Role / Timing Role: Unidirectional clamp between VBUS and GND, activated only during overvoltage faults (not during normal 5 V operation). Use Value: 9.0 V VWM avoids false triggering during USB 2.0/3.0 hot-plug events while clamping 15.4 V during 10/1000 µs surges. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ9.0AHE3/A | Lower PPPM (400 W), smaller DO-214AC (SMA) package, same VWM/VC specs. | Not suitable for ISO 7637-2 load dump; limited to low-energy ESD and inductive spikes. | Select when space-constrained layouts require smaller footprint and surge energy is ≤400 W. |
| SMCJ9.0A-E3/9AT | Same DO-214AB package and electrical specs, but commercial-grade (non-AEC-Q101) and JESD 201 Class 1A whisker rating. | Lacks automotive qualification; acceptable for industrial/commercial power rails where AEC-Q101 is not mandated. | Select for cost-sensitive non-automotive designs requiring identical clamping performance without automotive certification. |
Compared with SMCJ9.0HE3/9AT, SMAJ9.0AHE3/A trades surge capacity for size reduction, while SMCJ9.0A-E3/9AT retains full electrical equivalence but omits AEC-Q101 validation - enabling design reuse across automotive and industrial platforms with appropriate qualification gating.
Availability
SMCJ9.0HE3/9AT is available at Aetrix Electronics and suitable for automotive electronic control units, industrial sensor interfaces, and telecom DC power inputs requiring stable component supply and AEC-Q101 compliance.
Supply support for SMCJ9.0HE3/9AT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay General Semiconductor is a global leader in discrete semiconductors, specializing in diodes, MOSFETs, optoelectronics, and passive components with emphasis on reliability and application-specific performance.
The SMCJ series belongs to Vishay's TRANSZORB® TVS portfolio, engineered specifically for high-power transient suppression in harsh environments such as automotive, industrial, and telecom infrastructure.
FAQ
What is the breakdown voltage range of the SMCJ9.0HE3/9AT?
The SMCJ9.0HE3/9AT has a guaranteed breakdown voltage (VBR) range of 10.0 V to 11.1 V at a test current of 1.0 mA, measured per ANSI/IEEE C62.35 standards. This range ensures consistent avalanche initiation across production lots and temperature extremes, directly supporting its use as a precise overvoltage clamp in 12 V automotive systems. The SMCJ9.0HE3/9AT maintains this specification under AEC-Q101 stress conditions.
Is the SMCJ9.0HE3/9AT suitable for bi-directional transient protection?
No, the SMCJ9.0HE3/9AT is a unidirectional TVS diode, indicated by the "A" suffix (not "CA"). It conducts only in reverse bias above VBR and blocks forward current up to its rated IFSM. For bi-directional protection, Vishay offers the SMCJ9.0CA variant. The SMCJ9.0HE3/9AT must be oriented with its cathode band toward the protected line to function correctly in DC-coupled applications.
What does the "HE3" suffix signify in SMCJ9.0HE3/9AT?
"HE3" denotes RoHS-compliant construction with AEC-Q101 qualification and JESD 201 Class 2 whisker resistance. Unlike the "E3" suffix (commercial grade, Class 1A), "HE3" confirms automotive-grade reliability for under-hood and safety-critical systems. The SMCJ9.0HE3/9AT meets all AEC-Q101 stress tests including temperature cycling, high-temperature operating life, and unbiased highly accelerated stress testing.
How does the SMCJ9.0HE3/9AT perform under repeated surge conditions?
The SMCJ9.0HE3/9AT is rated for non-repetitive pulses per Figure 3 of Vishay document 88394, with derating above TA = 25 °C shown in Figure 2. Its glass-passivated junction and low incremental surge resistance ensure stable VC and minimal parameter shift after multiple 10/1000 µs transients - validated in AEC-Q101 HAST and temperature cycling tests. For repetitive surges, thermal design using the RθJA = 75 °C/W value is essential to avoid junction overheating.
What is the maximum reverse leakage current for the SMCJ9.0HE3/9AT at rated VWM?
The SMCJ9.0HE3/9AT exhibits a maximum reverse leakage current (ID) of 1.0 µA at its rated stand-off voltage of 9.0 V and TA = 25 °C. This ultra-low leakage preserves signal integrity in high-impedance sensor circuits and minimizes standby power loss in always-on automotive modules. The SMCJ9.0HE3/9AT maintains leakage < 5 µA up to 85 °C per characterization data in the Vishay datasheet.
SMCJ9.0HE3/9AT Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay General Semiconductor - Diodes Division
- Package/Case:
- DO-214AB, SMC
- Series:
- TransZorb®
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 9V
- Voltage - Breakdown (Min):
- 10V
- Voltage - Clamping (Max) @ Ipp:
- 16.9V
- Current - Peak Pulse (10/1000µs):
- 88.8A
- Power - Peak Pulse:
- 1500W (1.5kW)
- Power Line Protection:
- No
- Applications:
- -
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DO-214AB (SMCJ)
SMCJ9.0HE3/9AT FAQ
1.How can I place an order for SMCJ9.0HE3/9AT through Aetrix?
Please submit a Request for Quotation (RFQ) for SMCJ9.0HE3/9AT on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMCJ9.0HE3/9AT reliable?
The price and inventory of SMCJ9.0HE3/9AT are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMCJ9.0HE3/9AT is usually 5 days.
3.What payment methods are accepted for SMCJ9.0HE3/9AT?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMCJ9.0HE3/9AT transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMCJ9.0HE3/9AT?
SMCJ9.0HE3/9AT orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMCJ9.0HE3/9AT order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMCJ9.0HE3/9AT?
For technical support, including SMCJ9.0HE3/9AT datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMCJ9.0HE3/9AT requirements.
6.How does Aetrix verify that SMCJ9.0HE3/9AT is sourced from the original manufacturer or authorized distributors?
All SMCJ9.0HE3/9AT products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMCJ9.0HE3/9AT meets industry standards.
7.What is the process for return or replacement of SMCJ9.0HE3/9AT?
All SMCJ9.0HE3/9AT units undergo pre-shipment inspection (PSI). If there is an issue with SMCJ9.0HE3/9AT, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMCJ9.0HE3/9AT part is unused and in its original packaging.
Return procedure for SMCJ9.0HE3/9AT:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMCJ9.0HE3/9AT Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
