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onsemi SMF05CT1G
- Part No.:
- SMF05CT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SMF05CT1G.pdf
- Description:
- TVS DIODE 5VWM 12.5V SC88/SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:24,936
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Product details
Overview
SMF05CT1G from onsemi is a 5-line monolithic ESD protection diode array in SC-88 package, featuring 5.0 V reverse working voltage, 6.2–7.2 V breakdown voltage at 1 mA, and 9.8 V clamping voltage at 5 A (8 × 20 µs). It delivers 100 W peak power dissipation and meets IEC 61000-4-2 (15 kV air / 8 kV contact) for transient suppression in USB, HDMI, and serial port interfaces.
For engineers reviewing the SMF05CT1G datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM ≥ 5.0 V, clamping voltage ≤ 12.5 V at 8 A, junction capacitance of 80–130 pF per line, and SC-88 footprint compatibility with high-density PCB layouts for portable and automotive electronics.
Technical Context
The SMF05CT1G implements a common-anode architecture with five independent cathodes and one shared anode (Pin 2), enabling simultaneous bidirectional ESD protection across five signal lines without cross-talk. Its silicon avalanche structure ensures fast response (<1 ns) to transients while maintaining low leakage (≤5.0 µA at 5 V).
Designed for unidirectional protection, it operates within −40 °C to +125 °C junction temperature range and supports reflow soldering up to 260 °C for 10 seconds. Compliance with AEC-Q101 and UL 94 V-0 confirms suitability for automotive and safety-critical industrial environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Working Voltage | 5.0 V - Maximum continuous DC or peak AC voltage each protected line can withstand without conduction |
| Breakdown Voltage | 6.2–7.2 V at 1 mA - Threshold where avalanche conduction begins; defines minimum overvoltage trip point |
| Clamping Voltage | 9.8 V at 5 A (8 × 20 µs) - Maximum voltage seen by downstream IC during specified surge, limiting stress on connected logic |
| Junction Capacitance | 80–130 pF per line at 0 V, 1 MHz - Impacts high-speed signal integrity; suitable for USB 2.0 and RS-232 but not USB 3.0 |
| Peak Pulse Current | 8.0 A (8 × 20 µs) - Maximum transient current each line handles before failure; determines survivability against lightning-induced surges |
| ESD Rating | HBM Class 3B (>8 kV), IEC 61000-4-2 ±15 kV (air), ±8 kV (contact) - Validated immunity level for handling and system-level ESD events |
Pinout & Package
SC-88 package (Case 419B, Style 24), 2.00 mm × 1.25 mm × 0.90 mm, 0.65 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode Line 1 | Protected signal path #1; connects to I/O line requiring ESD clamp to common anode |
| 2 | Common Anode | Shared return node for all five protection diodes; must connect to system ground or low-impedance reference |
| 3 | Cathode Line 2 | Protected signal path #2; electrically isolated from other cathodes for independent line protection |
| 4 | Cathode Line 3 | Protected signal path #3; enables compact multi-line protection without discrete diode arrays |
| 5 | Cathode Line 4 | Protected signal path #4; maintains <130 pF capacitance to preserve signal rise time in 100 Mbps interfaces |
| 6 | Cathode Line 5 | Protected signal path #5; completes full 5-line coverage in single 6-pin footprint, reducing board area by ~70% vs. discrete solutions |
Key Features
| Feature | Design Value |
|---|---|
| Monolithic common-anode array | Five independent ESD paths share one anode terminal, minimizing layout complexity and ground loop risk in multi-line interfaces |
| 100 W peak power rating | Withstands 8 × 20 µs surges up to 8 A without degradation-sufficient for IEC 61000-4-5 Level 3 (1 kV/2 Ω) testing |
| IEC 61000-4-2 compliance | Validated to ±15 kV air discharge and ±8 kV contact discharge, meeting end-equipment CE/UL immunity requirements |
| UL 94 V-0 flammability rating | Self-extinguishing polymer housing prevents fire propagation during catastrophic overvoltage events |
| AEC-Q101 qualification | Passed stress tests including HTSL, TCT, and ESD-HBM/MM for under-hood automotive applications |
Applications
| USB 2.0 Interface Protection | Automotive Infotainment Ports |
|---|---|
Use Scenario: Protecting D+, D−, ID, VBUS, and GND pins of micro-USB connectors in automotive head units against ESD and hot-plug transients. IC Role / Device Role / Timing Role: Unidirectional transient voltage suppressor placed between connector and USB PHY, clamping surges before they reach the controller. Use Value: Limits clamped voltage to ≤12.5 V at 8 A, preventing latch-up or gate oxide damage in 3.3 V USB transceivers while maintaining <130 pF loading. | Use Scenario: Shielding CAN FD, LIN, and audio AUX inputs in vehicle infotainment systems from ESD events during service or user interaction. IC Role / Device Role / Timing Role: ESD protection array for low-speed data and analog lines, operating within −40 °C to +125 °C ambient range. Use Value: AEC-Q101 qualification and 8 kV HBM rating ensure reliability in harsh automotive environments without derating. |
| Notebook Serial Port Protection | Industrial Ethernet PHY Interface |
Use Scenario: Safeguarding RS-232 TX/RX/CTS/RTS/DCD signals in ruggedized notebooks exposed to frequent field ESD events. IC Role / Device Role / Timing Role: Bidirectional clamping device (via common anode to ground) suppressing ±8 kV contact discharges per IEC 61000-4-2. Use Value: 9.8 V clamping at 5 A ensures downstream UART ICs see sub-10 V stress, avoiding permanent damage during handling. | Use Scenario: Protecting MDI-X pairs and management I²C lines in industrial Ethernet switches subjected to factory-floor ESD and cable-induced surges. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on PHY-side signal traces, preserving signal integrity up to 100 Mbps. Use Value: 80–130 pF capacitance avoids skew or attenuation in differential pairs, while 100 W peak power handles repetitive surge exposure. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection array applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| TPD4E001DRYR | Lower clamping voltage (6.5 V @ 4 A), higher capacitance (12 pF typical per line), SOT-563 package (5-pin) | Optimized for high-speed USB 3.0/PCIe; insufficient for 8 A surge handling required in industrial ports | Select when signal bandwidth > 1 GHz and surge current < 4 A; avoid for automotive or high-energy transient environments |
| SZSMF05CT1G | Identical electrical specs; AEC-Q101 qualified with PPAP documentation and automotive-specific change control | Required for Tier-1 automotive BOMs; same footprint and performance but with traceable manufacturing controls | Choose for production automotive programs needing PPAP compliance; otherwise SMF05CT1G suffices for industrial/commercial use |
Compared with TPD4E001DRYR, SMF05CT1G provides higher surge robustness (8 A vs. 4 A) at the cost of higher capacitance, making it better suited for industrial serial links than ultra-high-speed interfaces; versus SZSMF05CT1G, it lacks PPAP documentation but matches all electrical and mechanical specifications for non-automotive deployments.
Availability
SMF05CT1G is available at Aetrix Electronics and suitable for USB 2.0 interface protection, automotive infotainment port hardening, and industrial serial port ESD mitigation requiring stable component supply across long-lifecycle embedded programs.
Supply support for SMF05CT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and ESD protection solutions for automotive, industrial, and computing markets.
The SMF series is designed specifically for compact, high-reliability transient voltage suppression in space-constrained multi-line interfaces, balancing clamping performance, surge capacity, and board-level integration.
FAQ
What is the maximum operating junction temperature for SMF05CT1G?
The SMF05CT1G has a specified operating junction temperature range of −40 °C to +125 °C. This rating is validated per onsemi's thermal characterization and ensures reliable operation in automotive under-hood and industrial control cabinet environments. The SMF05CT1G maintains its 5.0 V VRWM and 9.8 V clamping performance across this full range when mounted on standard FR-4 PCBs with recommended pad layout.
Does SMF05CT1G support bidirectional ESD protection?
No, SMF05CT1G is a unidirectional ESD protection device due to its common-anode configuration. It protects against positive transients on cathode lines relative to the anode (ground), but does not clamp negative excursions below ground. For bidirectional protection, external series resistors or complementary diode arrangements are required. The SMF05CT1G datasheet explicitly specifies unidirectional operation in the Electrical Characteristics table.
What is the lead finish and soldering profile for SMF05CT1G?
The SMF05CT1G uses a Pb-free matte tin lead finish and is rated for lead solder temperature of 260 °C for 10 seconds, compliant with J-STD-020 moisture sensitivity level 1. Reflow profiles must follow onsemi's Soldering and Mounting Techniques Reference Manual (SOLDERRM/D), with peak temperature not exceeding 260 °C and time above 217 °C limited to 60–150 seconds. The SMF05CT1G package (SC-88, Case 419B) is compatible with standard Type II reflow processes.
How does SMF05CT1G compare to SMF12CT1G in terms of voltage ratings?
The SMF05CT1G has a 5.0 V reverse working voltage (VRWM) and 6.2–7.2 V breakdown voltage (VBR), optimized for 3.3 V or 5 V logic interfaces. In contrast, SMF12CT1G offers 12 V VRWM and 13.3–15 V VBR, targeting 12 V automotive buses or industrial I/O. Both share identical SC-88 packaging and 100 W peak power, but their clamping voltages differ: SMF05CT1G clamps at 9.8 V (5 A), while SMF12CT1G clamps at 21 V (3 A), reflecting their distinct voltage-class applications.
Is SMF05CT1G suitable for protecting high-speed USB 3.0 signals?
No, SMF05CT1G is not recommended for USB 3.0 SuperSpeed (5 Gbps) lanes due to its 80–130 pF junction capacitance per line, which would severely degrade signal integrity and fail eye diagram compliance. It is validated for USB 2.0 (480 Mbps), RS-232, CAN, and other sub-100 Mbps interfaces where capacitance impact is acceptable. For USB 3.0, lower-capacitance alternatives like NUP4201MR6T1G (0.8 pF) are required, and the SMF05CT1G datasheet does not claim high-speed signal compatibility.
SMF05CT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 5
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 5V (Max)
- Voltage - Breakdown (Min):
- 6.2V
- Voltage - Clamping (Max) @ Ipp:
- 12.5V
- Current - Peak Pulse (10/1000µs):
- 8A (8/20µs)
- Power - Peak Pulse:
- 100W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 80pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-88/SC70-6/SOT-363
SMF05CT1G FAQ
1.How can I place an order for SMF05CT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for SMF05CT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMF05CT1G reliable?
The price and inventory of SMF05CT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMF05CT1G is usually 5 days.
3.What payment methods are accepted for SMF05CT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMF05CT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMF05CT1G?
SMF05CT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMF05CT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMF05CT1G?
For technical support, including SMF05CT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMF05CT1G requirements.
6.How does Aetrix verify that SMF05CT1G is sourced from the original manufacturer or authorized distributors?
All SMF05CT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMF05CT1G meets industry standards.
7.What is the process for return or replacement of SMF05CT1G?
All SMF05CT1G units undergo pre-shipment inspection (PSI). If there is an issue with SMF05CT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMF05CT1G part is unused and in its original packaging.
Return procedure for SMF05CT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMF05CT1G Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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