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onsemi SMF12CT1G
- Part No.:
- SMF12CT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- 6-TSSOP, SC-88, SOT-363
- Datasheet:
-
SMF12CT1G.pdf
- Description:
- TVS DIODE 12VWM 23VC SC88/SC70-6
- Quantity:
- Payment:
- Shipping:
Inventory:731
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Product details
Overview
SMF12CT1G from onsemi is a 5-line ESD and transient voltage protection diode array in SC-88 package, featuring 12 V reverse working voltage (VRWM), 13.3–15 V breakdown voltage (VBR), 21 V clamping voltage at 3 A, 6 A peak pulse current (IPP), and 40–60 pF line-to-GND capacitance. It protects high-speed data lines in automotive infotainment interfaces against IEC 61000-4-2 ESD events up to 15 kV (air) and 8 kV (contact).
For engineers reviewing the SMF12CT1G datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM ≥ system operating voltage, clamping voltage margin relative to IC I/O tolerance, junction capacitance impact on signal integrity, and AEC-Q101 qualification for automotive deployment.
Technical Context
The SMF12CT1G implements a monolithic common-anode architecture with five independent cathodes and one shared anode, enabling simultaneous protection of five unidirectional signal lines without cross-talk. Its silicon avalanche structure delivers precise VBR control and stable clamping under 8 × 20 µs surge pulses.
Designed for low-capacitance, high-speed interface protection, it meets IEC 61000-4-2 Level 4 (±15 kV air / ±8 kV contact) and exceeds HBM Class 3B (±16 kV) and MM Class C (±400 V). Thermal derating follows a defined curve from 100 W at 25 °C ambient down to ~60 W at 125 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Reverse Working Voltage (VRWM) | 12 V - Maximum continuous DC or peak AC voltage the device blocks without leakage exceeding 0.1 µA; sets minimum system bus voltage compatibility. |
| Breakdown Voltage (VBR) | 13.3–15 V at IT = 1 mA - Onset voltage of avalanche conduction; defines ESD trigger threshold with ±1.7 V tolerance. |
| Clamping Voltage (VC) | 21 V at IPP = 3 A - Maximum voltage seen by protected IC during 8 × 20 µs surge; must stay below downstream I/O absolute max rating. |
| Peak Pulse Current (IPP) | 6.0 A - Max non-repetitive surge current the device safely clamps; determines survivability against IEC 61000-4-5 Line Surge events. |
| Junction Capacitance (CJ) | 40–60 pF at VR = 0 V, f = 1 MHz - Signal-line loading effect; impacts rise time and bandwidth in USB 2.0 or CAN FD interfaces. |
| ESD Rating | ±15 kV air / ±8 kV contact per IEC 61000-4-2 - Validated immunity level for end-equipment compliance testing. |
| Operating Junction Temp | −40 to +125 °C - Enables use in under-hood automotive modules and industrial edge controllers without thermal derating penalties. |
Pinout & Package
SMF12CT1G uses the SC-88 (Case 419B, Style 24) surface-mount package: 2.00 mm × 1.25 mm × 0.90 mm, 0.65 mm pitch, Pb-free, RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode (Line 1) | Protected signal path input; connects to first I/O line (e.g., USB D+); conducts surge current to common anode when voltage exceeds VBR. |
| 2 | Anode (Common) | Shared return node for all five channels; ties to system ground or low-impedance chassis plane to complete clamping path. |
| 3 | Cathode (Line 2) | Second protected line (e.g., USB D−); electrically isolated from other cathodes to prevent coupling during multi-line transients. |
| 4 | Cathode (Line 3) | Third independent channel (e.g., UART TX); maintains <1 pF inter-channel capacitance per datasheet layout guidelines. |
| 5 | Cathode (Line 4) | Fourth channel (e.g., UART RX); same electrical isolation and clamping behavior as Pins 1/3/4/6. |
| 6 | Cathode (Line 5) | Fifth channel (e.g., I²C SCL); completes full 5-line protection set; all cathodes rated identically for VRWM and VC. |
Key Features
| Feature | Design Value |
|---|---|
| 5-line monolithic protection | Single SC-88 footprint replaces five discrete TVS diodes, reducing PCB area by >60% and eliminating routing mismatch in high-speed buses. |
| 100 W peak power dissipation | Handles 8 × 20 µs surges up to 6 A without failure; supports IEC 61000-4-5 Level 3 (1 Ω source impedance) surge immunity. |
| AEC-Q101 qualified | Validated for automotive electronics including infotainment, ADAS camera links, and body control modules per stress test requirements. |
| IEC 61000-4-2 Level 4 compliance | Guarantees robustness against real-world ESD events in factory handling and end-user operation without system reset or latch-up. |
| UL 94 V-0 flammability rating | Self-extinguishing polymer housing prevents fire propagation during sustained overvoltage fault conditions. |
Applications
| Automotive Infotainment Interfaces | Industrial Ethernet Ports |
|---|---|
|
Use Scenario: Protecting USB 2.0 and HDMI CEC lines in head-unit mainboards exposed to ESD during assembly and field service. IC Role / Device Role / Timing Role: Unidirectional transient suppressor placed between connector and PHY IC; clamps fast-rising ESD pulses before they reach sensitive SerDes inputs. Use Value: Maintains 480 Mbps USB data integrity with <60 pF loading while surviving ±15 kV contact discharge per IEC 61000-4-2. |
Use Scenario: Shielding RJ45 magnetics secondary side and MDI pins in DIN-rail mounted PLC gateways operating in noisy factory environments. IC Role / Device Role / Timing Role: Common-anode TVS array shunting induced surges from lightning-induced ground loops onto Ethernet PHY's differential pairs. Use Value: Limits clamped voltage to 23 V at 6 A, staying within Ethernet PHY's ±36 V abs-max rating and preventing link dropouts. |
| Notebook Serial Bus Protection | Automotive CAN FD Transceivers |
|
Use Scenario: Safeguarding SMBus, LPC, and eSPI traces on thin-client motherboards where board space limits discrete component count. IC Role / Device Role / Timing Role: Low-capacitance ESD clamp on bidirectional control buses; operates passively until transient exceeds 13.3 V VBR. Use Value: Adds only 0.5 ns propagation delay and avoids signal distortion on 100 kHz–66 MHz control buses due to tight 40–60 pF match. |
Use Scenario: Protecting CAN FD transceiver I/O pins (CANH/CANL) in vehicle domain controllers subjected to ISO 7637-2 pulse 1/2/5a transients. IC Role / Device Role / Timing Role: Secondary-level surge protector downstream of primary LC filter; clamps residual energy after bulk suppression. Use Value: Delivers 21 V clamping at 3 A, ensuring transceiver remains within its 27 V abs-max rating during 100 V/50 ms load-dump events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD and transient voltage protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SZSMF12CT1G | AEC-Q101 qualified with PPAP capability; identical electrical specs but includes automotive-specific traceability and change control. | Required for Tier-1 automotive production; not needed for industrial or consumer designs. | Select SZSMF12CT1G when OEM documentation, lot traceability, or PPAP submission is mandated. |
| SMF15CT1G | Higher VRWM (15 V) and VBR (17–19 V); higher clamping voltage (23 V at 5 A); lower capacitance (33–45 pF). | Better suited for 12–15 V nominal systems (e.g., LIN bus, 13.5 V automotive supply rails) where tighter clamping margin is less critical than lower capacitance. | Choose SMF15CT1G when protecting 15 V tolerant interfaces or when <45 pF is mandatory for >100 MHz signal integrity. |
Compared with SMF12CT1G, SZSMF12CT1G adds automotive process controls without altering electrical performance, while SMF15CT1G trades lower clamping margin for reduced capacitance and higher standoff voltage-making each optimal for distinct voltage tolerance and bandwidth requirements.
Availability
SMF12CT1G is available at Aetrix Electronics and suitable for automotive infotainment interfaces, industrial Ethernet ports, and notebook serial bus protection requiring stable component supply across long-lifecycle programs.
Supply support for SMF12CT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT markets.
The SMF series belongs to onsemi's transient voltage suppression portfolio, engineered specifically for compact, high-reliability ESD and surge protection in space-constrained, mission-critical electronic systems.
FAQ
What is the maximum clamping voltage of SMF12CT1G under standard surge conditions?
The SMF12CT1G clamps to 21 V at 3 A peak pulse current (8 × 20 µs waveform) and 23 V at 6 A. These values are measured per IEC 61000-4-5 test conditions and define the upper voltage limit imposed on protected circuitry during transient events. Designers must ensure downstream ICs tolerate these clamped voltages at their I/O pins.
Is SMF12CT1G suitable for protecting high-speed USB 2.0 data lines?
Yes, SMF12CT1G is suitable for USB 2.0 protection with its 40–60 pF junction capacitance and 21 V clamping at 3 A. Its low capacitance minimizes signal rise-time degradation, and its common-anode 5-line configuration allows simultaneous protection of D+, D−, ID, VBUS sense, and GND-return paths without skew or crosstalk.
Does SMF12CT1G meet automotive qualification standards?
Standard SMF12CT1G is not AEC-Q101 qualified; however, the SZSMF12CT1G variant is fully AEC-Q101 qualified and PPAP capable. Both share identical electrical specifications, but only SZSMF12CT1G carries automotive-grade process controls, lot traceability, and change notification protocols required for Tier-1 automotive programs.
How does the common-anode architecture of SMF12CT1G affect PCB layout?
The common-anode architecture requires routing all five cathodes to separate signal lines while tying Pin 2 (anode) to a low-inductance ground plane. This layout minimizes ground bounce during multi-line surges and avoids shared-path impedance that could elevate clamping voltage. Keep anode trace short and wide, and avoid daisy-chaining cathode connections.
What is the operating temperature range for SMF12CT1G?
SMF12CT1G operates across −40 °C to +125 °C junction temperature. This range supports deployment in under-hood automotive modules, industrial motor drives, and outdoor networking equipment. Derating curves show usable peak power remains above 60 W even at 125 °C ambient, ensuring reliability in thermally demanding environments.
SMF12CT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- 6-TSSOP, SC-88, SOT-363
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 5
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 12V (Max)
- Voltage - Breakdown (Min):
- 13.3V
- Voltage - Clamping (Max) @ Ipp:
- 23V
- Current - Peak Pulse (10/1000µs):
- 6A (8/20µs)
- Power - Peak Pulse:
- 100W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 40pF @ 1MHz
- Operating Temperature:
- -40°C ~ 125°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SC-88/SC70-6/SOT-363
SMF12CT1G FAQ
1.How can I place an order for SMF12CT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for SMF12CT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMF12CT1G reliable?
The price and inventory of SMF12CT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMF12CT1G is usually 5 days.
3.What payment methods are accepted for SMF12CT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMF12CT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMF12CT1G?
SMF12CT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMF12CT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMF12CT1G?
For technical support, including SMF12CT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMF12CT1G requirements.
6.How does Aetrix verify that SMF12CT1G is sourced from the original manufacturer or authorized distributors?
All SMF12CT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMF12CT1G meets industry standards.
7.What is the process for return or replacement of SMF12CT1G?
All SMF12CT1G units undergo pre-shipment inspection (PSI). If there is an issue with SMF12CT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMF12CT1G part is unused and in its original packaging.
Return procedure for SMF12CT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMF12CT1G Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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