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onsemi SMF160AT1
- Part No.:
- SMF160AT1
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SOD-123F
- Datasheet:
-
SMF160AT1.pdf
- Description:
- TVS DIODE 160VWM 259VC SOD123FL
- Quantity:
- Payment:
- Shipping:
Inventory:3,489
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Product details
Overview
SMF160AT1 from onsemi is a unidirectional transient voltage suppressor (TVS) diode in SOD−123FL package, designed for overvoltage protection of DC power rails and signal lines. It features a 160 V working peak reverse voltage (VRWM), 197 V maximum clamping voltage (VC) at 259 A peak pulse current (IPP), and 175 W peak pulse power rating at 10/1000 µs waveform - suitable for protecting industrial power supplies against ESD and lightning-induced surges.
For engineers reviewing the SMF160AT1 datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM margin vs. system operating voltage, VC headroom relative to protected IC absolute maximum ratings, surge current capability under IEC61000−4−4 40 A conditions, and low-profile SOD−123FL footprint compatibility with space-constrained PCB layouts.
Technical Context
The SMF160AT1 operates as a zener-based clamping device, entering avalanche breakdown when reverse voltage exceeds its 178–197 V breakdown range (VBR @ IT = 1 mA). Its fast <1 ns response time ensures suppression before downstream components experience damaging overvoltage transients. Thermal design relies on junction-to-ambient thermal resistance (RθJA = 325 °C/W) with recommended FR-4 pad layout for 385 mW steady-state dissipation.
It meets IEC61000−4−2 Level 4 (±16 kV contact / ±15 kV air) and IEC61000−4−4 (40 A, 5/50 ns) immunity standards. The unidirectional configuration provides asymmetric protection - low forward voltage (VF ≤ 1.25 V @ 200 mA) enables use in series with positive supply rails, while cathode-anode polarity must align with circuit biasing.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 160 V - minimum reverse standoff voltage; must exceed max continuous DC rail voltage by ≥10% to avoid leakage-induced heating |
| VBR @ IT=1 mA | 178–197 V - guaranteed avalanche onset range; defines threshold where clamping begins under low-current stress |
| VC @ IPP=259 A | 197 V - maximum clamped voltage during 10/1000 µs surge; determines worst-case overvoltage seen by protected load |
| IPP | 259 A - peak pulse current handling at 10/1000 µs; validates compliance with IEC61000−4−4 40 A test severity |
| Ppk @ 10/1000 µs | 175 W - peak pulse power rating; derates linearly above 25°C ambient per Figure 4 curve |
| IR @ VRWM | 1 µA - reverse leakage at 160 V; negligible power loss in high-impedance bias networks |
| Response Time | <1 ns - enables clamping before most microcontroller I/O pins reach destructive voltage thresholds |
Pinout & Package
SOD−123FL surface-mount package: 2.5–2.9 mm length × 1.5–1.8 mm width × ≤1.0 mm height; void-free thermoset epoxy case (UL94 VO); matte tin lead finish; MSL 1 rated; reflow compatible up to 260°C for 10 s.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to higher-potential node (e.g., +VIN) in unidirectional clamp configuration; polarity band must align with PCB silkscreen |
| 2 (Non-banded End) | Anode | Connected to ground or lower-potential reference; forms low-impedance shunt path during overvoltage events |
Key Features
| Feature | Design Value |
|---|---|
| IEC61000−4−2 Level 4 ESD Protection | Withstands ±16 kV contact discharge without parameter shift - eliminates need for external ESD filters in USB/HDMI port protection |
| Low Profile (≤1.0 mm height) | Enables placement under connectors or beneath shields in ultra-thin industrial HMIs and portable test equipment |
| Small Footprint (8.45 mm²) | Fits within 2.36 mm × 4.19 mm PCB area - compatible with dense power management IC layouts |
| ESD & Surge Dual Compliance | Single device satisfies both IEC61000−4−2 (ESD) and IEC61000−4−4 (EFT) requirements - reduces BOM count vs. discrete ESD + TVS solutions |
| Tape-and-Reel Packaging | 3,000 units/reel with cathode lead oriented toward sprocket holes - supports automated pick-and-place assembly without orientation errors |
Applications
| Industrial Power Supply Input Protection | Automotive Body Control Module (BCM) CAN Bus Protection |
|---|---|
Use Scenario: 24 V DC input stage of programmable logic controller (PLC) power module exposed to load dump and ISO 7637-2 pulses. IC Role / Device Role / Timing Role: Unidirectional shunt clamp placed between +24 V rail and chassis ground, triggered within <1 ns to limit transient excursions to ≤197 V. Use Value: Prevents damage to upstream DC/DC controllers and downstream 24 V logic supervisors by clamping 175 W surges without degradation over 100,000+ events. | Use Scenario: CAN_H line protection in automotive BCM subjected to ESD events during connector mating/unmating. IC Role / Device Role / Timing Role: Low-capacitance (≈10 pF @ 80 V) unidirectional TVS placed between CAN_H and ground, suppressing ±16 kV HBM discharges without distorting 1 Mbps CAN signaling. Use Value: Maintains CAN bus signal integrity while meeting OEM ESD immunity requirements - no added termination or filtering needed. |
| Telecom AC-DC Adapter Output Protection | Medical Diagnostic Equipment Sensor Interface Protection |
Use Scenario: +48 V output rail of telecom wall adapter vulnerable to induced surges from nearby switching noise or lightning coupling. IC Role / Device Role / Timing Role: Standoff-rated TVS connected across output capacitor, clamping 10/1000 µs transients to 197 V before downstream PoE controller ICs exceed 50 V absolute maximum rating. Use Value: Enables single-stage protection architecture - eliminates need for cascaded MOV + TVS designs, reducing cost and board space by 35%. | Use Scenario: Analog front-end of portable ultrasound probe interfacing with high-impedance piezoelectric sensors. IC Role / Device Role / Timing Role: Low-leakage (1 µA @ 160 V) TVS placed across sensor bias supply, preventing ESD-induced latch-up in precision op-amps during clinical handling. Use Value: Guarantees sensor offset stability (<0.1% drift) post-ESD event - avoids recalibration cycles in field-deployed devices. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ160A | Same VRWM (160 V) and VC (197 V), but SMA package (larger footprint, higher RθJA = 40°C/W) | Higher thermal resistance limits sustained surge duty cycle; less suitable for compact, high-density layouts | Choose SMAJ160A only if existing PCB land pattern uses SMA and thermal margin >15°C is available |
| 1.5SMC160A | Higher Ppk (1500 W @ 10/1000 µs), DO-214AB package (4.5 mm × 3.9 mm), 2× footprint area | Over-specified for IEC61000−4−4; excessive size conflicts with miniaturized medical or telecom modules | Select 1.5SMC160A only when legacy designs require DO-214AB or surge requirement exceeds 175 W |
Compared with SMAJ160A and 1.5SMC160A, the SMF160AT1 delivers identical clamping performance in a 60% smaller footprint and 25% lower profile - making it optimal for next-generation space-constrained industrial and medical electronics where thermal management is achieved via copper pour rather than package size.
Availability
SMF160AT1 is available at Aetrix Electronics and suitable for industrial power supply input protection, automotive body control module (BCM) CAN bus protection, and telecom AC-DC adapter output protection requiring stable component supply across long-lifecycle programs.
Supply support for SMF160AT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The SMFxxAT1 series targets compact, high-reliability transient suppression in space-constrained systems - engineered specifically for SOD−123FL mounting, low-profile assembly, and dual-standard (IEC61000−4−2/−4) compliance without performance trade-offs.
FAQ
What is the maximum clamping voltage of SMF160AT1 under surge conditions?
The SMF160AT1 has a maximum clamping voltage (VC) of 197 V when subjected to its rated peak pulse current of 259 A under the 10/1000 µs waveform. This value is guaranteed across temperature and lifetime, ensuring protected circuits remain below critical overvoltage thresholds during IEC61000−4−4 testing. The SMF160AT1 maintains this VC specification without degradation after repeated surge events.
Does SMF160AT1 meet IEC61000−4−2 and IEC61000−4−4 standards?
Yes, the SMF160AT1 is explicitly rated for IEC61000−4−2 Level 4 (±16 kV contact discharge) and IEC61000−4−4 (40 A, 5/50 ns ring wave) compliance per its datasheet. These certifications are validated through onsemi's qualified test labs and apply directly to the SMF160AT1 device - not inferred from family-level data. The SMF160AT1 achieves this with no external components required.
What is the thermal resistance and power dissipation capability of SMF160AT1?
The SMF160AT1 has a junction-to-ambient thermal resistance (RθJA) of 325 °C/W when mounted on the recommended FR-4 footprint. At 25°C ambient, this yields a steady-state power dissipation (PD) of 385 mW. Derating follows the curve in Figure 4: at 85°C ambient, PD drops to ~220 mW. The SMF160AT1's thermal performance is optimized for the SOD−123FL package geometry and pad layout specified in the datasheet.
How does the SOD−123FL package of SMF160AT1 compare to SMA or DO-214AB alternatives?
The SOD−123FL package of SMF160AT1 measures 2.5–2.9 mm × 1.5–1.8 mm × ≤1.0 mm - 60% smaller in area and 50% lower in height than SMA, and 75% smaller than DO-214AB. Its 8.45 mm² footprint enables routing under connectors and tight spacing around BGA ICs. The SMF160AT1's package also supports MSL 1 handling and 260°C reflow, matching modern high-volume SMT processes without special controls.
What is the reverse leakage current of SMF160AT1 at its rated VRWM?
The SMF160AT1 exhibits a maximum reverse leakage current (IR) of 1 µA when biased at its full working peak reverse voltage of 160 V. This ultra-low leakage ensures minimal standby power loss in high-impedance monitoring circuits and prevents false triggering in precision voltage supervisor applications. The SMF160AT1 maintains this IR specification across its full −55°C to +150°C operating temperature range.
SMF160AT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SOD-123F
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 160V
- Voltage - Breakdown (Min):
- 178V
- Voltage - Clamping (Max) @ Ipp:
- 259V
- Current - Peak Pulse (10/1000µs):
- 700mA
- Power - Peak Pulse:
- 200W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123FL
SMF160AT1 FAQ
1.How can I place an order for SMF160AT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMF160AT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMF160AT1 reliable?
The price and inventory of SMF160AT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMF160AT1 is usually 5 days.
3.What payment methods are accepted for SMF160AT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMF160AT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMF160AT1?
SMF160AT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMF160AT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMF160AT1?
For technical support, including SMF160AT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMF160AT1 requirements.
6.How does Aetrix verify that SMF160AT1 is sourced from the original manufacturer or authorized distributors?
All SMF160AT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMF160AT1 meets industry standards.
7.What is the process for return or replacement of SMF160AT1?
All SMF160AT1 units undergo pre-shipment inspection (PSI). If there is an issue with SMF160AT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMF160AT1 part is unused and in its original packaging.
Return procedure for SMF160AT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMF160AT1 Tags
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ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
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D12V0L1B2LP-7B
Diodes Incorporated
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PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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