Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi SMF6.0AT1

Part No.:
SMF6.0AT1
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
SOD-123F
Datasheet:
AetrixSMF6.0AT1.pdf
Description:
TVS DIODE 6VWM 10.3VC SOD123FL
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,530

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMF6.0AT1 from onsemi is a unidirectional transient voltage suppressor (TVS) diode designed for overvoltage protection in low-voltage DC circuits. It features a 6.0 V working peak reverse voltage (VRWM), 10.3 V maximum clamping voltage at 19.4 A peak pulse current, and 200 W peak pulse power rating per 10/1000 µs waveform - ideal for safeguarding USB ports, microcontroller I/O lines, and low-voltage power rails against ESD and surge events.

For engineers reviewing the SMF6.0AT1 datasheet, pinout, applications, or equivalent options, key selection criteria include clamping performance under 19.4 A surge, sub-1 ns response time, IEC61000-4-2 Level 4 (±16 kV HBM) ESD robustness, and SOD−123FL package compatibility with high-density portable PCB layouts.

Technical Context

The SMF6.0AT1 operates as a Zener-based unidirectional TVS, conducting only during reverse overvoltage transients above its breakdown threshold (6.67–7.37 V at 10 mA). Its low zener impedance and fast <1 ns response enable effective suppression of fast-rising ESD pulses before downstream ICs are damaged.

Thermally, it uses a SOD−123FL package with 26 °C/W junction-to-cathode thermal resistance and is rated for −55 °C to +150 °C operation. It delivers 200 W peak power (10/1000 µs) and 1000 W peak power (8/20 µs) when mounted on recommended FR-4 pads, with derating applied above 25 °C ambient.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM6.0 V - Maximum continuous reverse operating voltage before clamping begins
VBR (min/max)6.67 V / 7.37 V @ 10 mA - Ensures reliable turn-on margin above nominal supply
VC @ IPP10.3 V @ 19.4 A - Clamped voltage seen by protected circuit during worst-case surge
IPP19.4 A - Peak surge current capability under standard 10/1000 µs waveform
Response Time< 1 ns - Fast enough to suppress ESD events before logic-level damage occurs
ESD Rating±16 kV HBM (Class 3), IEC61000-4-2 Level 4 - Validated for end-equipment compliance testing
PackageSOD−123FL - Low-profile (1.0 mm max height), 8.45 mm² footprint, MSL 1, 260 °C reflow compatible

Pinout & Package

SOD−123FL surface-mount package with cathode indicated by polarity band; 2-terminal unidirectional configuration; 1.5–1.8 mm width, 2.5–2.9 mm length, 0.7–1.1 mm lead width, and 3.4–3.8 mm overall length. Mounting position is unrestricted; qualified for lead-free reflow up to 260 °C.

Pin/TerminalCircuit RoleDesign Meaning
1 (Banded End)CathodeConnected to system ground or low-impedance return path; carries full surge current during clamping
2 (Non-banded End)AnodeConnected to protected line (e.g., USB D+, I/O pin); reverse-biased during normal operation

Key Features

FeatureDesign Value
Low Clamping RatioVC/VRWM = 1.72 - Minimizes voltage overshoot on protected 5 V or 3.3 V rails
Ultra-Fast Response< 1 ns - Captures ESD transients before propagation into sensitive CMOS inputs
High Surge Robustness200 W (10/1000 µs), 1000 W (8/20 µs) - Withstands multiple industrial surge events without degradation
Small-Signal CompatibilityIR ≤ 400 µA @ 6.0 V - Negligible leakage impact on battery-powered sensor nodes or sleep-mode circuits
Automated Assembly ReadySOD−123FL tape-and-reel (3000/reel), matte Sn finish, MSL 1 - Supports high-yield SMT production without baking

Applications

USB 2.0 Data Line ProtectionMicrocontroller GPIO Protection

Use Scenario: Protecting D+ and D− lines in portable USB peripherals against contact ESD and cable discharge events.

IC Role / Device Role / Timing Role: Unidirectional TVS placed between signal line and ground, clamping transients before they reach the USB transceiver PHY.

Use Value: Maintains signal integrity with <10.3 V clamping while meeting IEC61000-4-2 Level 4 (±16 kV) compliance without adding capacitance that degrades 480 Mbps eye diagram.

Use Scenario: Safeguarding 3.3 V or 5 V microcontroller I/O pins exposed to user interfaces, buttons, or external sensors.

IC Role / Device Role / Timing Role: Standoff voltage matched to MCU VDD (6.0 V VRWM), placed directly at pin entry point with minimal trace inductance.

Use Value: Prevents latch-up or gate oxide damage from ±8 kV contact ESD by limiting pin voltage to ≤10.3 V within <1 ns - preserving firmware reliability in field-deployed devices.

DC Power Rail ClampIndustrial Sensor Interface Protection

Use Scenario: Suppressing load dump and inductive switching spikes on 5 V auxiliary power rails in automotive body control modules.

IC Role / Device Role / Timing Role: Connected anode-to-rail, cathode-to-ground; absorbs 19.4 A surges without forward conduction during normal operation.

Use Value: Limits rail overshoot to ≤10.3 V during 10/1000 µs transients, preventing brownout resets or regulator overvoltage shutdown in compact ECUs.

Use Scenario: Shielding analog front-end inputs (e.g., 4–20 mA loop receivers) from induced surges in factory floor wiring harnesses.

IC Role / Device Role / Timing Role: Placed at connector entry, shunting transient energy to ground before reaching precision op-amps or ADC inputs.

Use Value: Delivers 200 W surge handling with <400 µA leakage at 6 V - ensuring no offset drift in µV-level measurement paths during standby.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMAJ6.0ASame VRWM (6.0 V) and VC (10.3 V), but SMA package (higher RθJA = 40°C/W, larger footprint)Less suitable for ultra-compact layouts; better thermal dissipation in open-air environmentsChoose SMAJ6.0A if board space allows and higher steady-state power handling is needed
P6SMB6.0AHigher Ppk (600 W), same VRWM/VC, but SMB package (3.5 mm × 4.6 mm vs. SOD−123FL's 2.7 mm × 1.7 mm)Preferred for industrial power supplies where surge repetition rate is high and layout density is less constrainedChoose P6SMB6.0A when 600 W single-pulse rating is required and 2× footprint increase is acceptable

Compared with SMAJ6.0A and P6SMB6.0A, the SMF6.0AT1 provides identical electrical protection performance in a 60% smaller footprint and 30% lower profile - making it optimal for space-constrained portable electronics where PCB real estate and component height are critical constraints.

Availability

SMF6.0AT1 is available at Aetrix Electronics and suitable for USB interface protection, microcontroller I/O hardening, and low-voltage DC rail clamping requiring stable component supply across high-mix, low-volume production runs and rapid prototyping cycles.

Supply support for SMF6.0AT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The SMF5.0AT1 Series belongs to onsemi's transient voltage suppressor portfolio, engineered specifically for high-surge-capability, low-leakage, ultra-fast clamping in space-constrained consumer and portable electronics.

FAQ

What is the clamping voltage of the SMF6.0AT1 under maximum surge conditions?

The SMF6.0AT1 has a maximum clamping voltage (VC) of 10.3 V when subjected to its rated peak pulse current of 19.4 A under the standard 10/1000 µs waveform. This value is guaranteed across temperature and process variation per the official onsemi datasheet, and defines the highest voltage the protected circuit will experience during a worst-case transient event. The SMF6.0AT1 maintains this clamping performance consistently due to its low dynamic impedance and Zener-based structure.

Is the SMF6.0AT1 suitable for protecting 3.3 V logic interfaces?

Yes, the SMF6.0AT1 is commonly used for 3.3 V logic protection because its 6.0 V VRWM provides sufficient margin above the 3.3 V rail while keeping clamping voltage (10.3 V) well below typical absolute maximum ratings of modern I/O cells. Its <400 µA leakage at 6.0 V avoids loading effects, and its <1 ns response ensures ESD transients are suppressed before damaging gate oxides. The SMF6.0AT1 is widely deployed in this role across portable MCU designs.

Does the SMF6.0AT1 meet IEC61000-4-2 and IEC61000-4-4 standards?

Yes, the SMF6.0AT1 is rated for Class 3 ESD per Human Body Model (>16 kV) and explicitly validated for IEC61000-4-2 Level 4 (±8 kV contact, ±15 kV air) and IEC61000-4-4 (40 A, 5/50 ns) surge immunity. These ratings are confirmed in the onsemi SMF5.0AT1 Series datasheet Rev. 0 and reflect tested performance - not theoretical capability. The SMF6.0AT1 achieves this through optimized junction design and low-inductance SOD−123FL packaging.

What is the thermal resistance and power derating behavior of the SMF6.0AT1?

The SMF6.0AT1 has a junction-to-cathode thermal resistance (RθJcathode) of 26 °C/W and a junction-to-ambient resistance (RθJA) of 325 °C/W when mounted on the recommended minimum pad size. Its DC power dissipation is 385 mW at 25 °C ambient, derating linearly to zero at 150 °C. Pulse power (200 W) is specified at TA = 25 °C and must be reduced per the derating curve in Figure 4 of the SMF5.0AT1 datasheet. This thermal profile is integral to the SMF6.0AT1's reliability in sustained surge environments.

Can the SMF6.0AT1 be used in bidirectional configurations?

No, the SMF6.0AT1 is a unidirectional TVS diode and must be used with correct polarity: anode to the protected line, cathode to ground. It does not conduct in forward bias beyond ~1.25 V, so it cannot clamp positive transients on grounded lines or negative excursions on VCC-connected nodes. For bidirectional protection, two SMF6.0AT1 devices in series opposition or a dedicated bidirectional part like SMBJ6.0CA would be required - the SMF6.0AT1 itself supports only single-quadrant clamping.

SMF6.0AT1 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
SOD-123F
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
1
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
6V
Voltage - Breakdown (Min):
6.67V
Voltage - Clamping (Max) @ Ipp:
10.3V
Current - Peak Pulse (10/1000µs):
19.4A
Power - Peak Pulse:
200W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOD-123FL

SMF6.0AT1 FAQ

1.How can I place an order for SMF6.0AT1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMF6.0AT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMF6.0AT1 reliable?

The price and inventory of SMF6.0AT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMF6.0AT1 is usually 5 days.

3.What payment methods are accepted for SMF6.0AT1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMF6.0AT1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMF6.0AT1?

SMF6.0AT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMF6.0AT1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMF6.0AT1?

For technical support, including SMF6.0AT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMF6.0AT1 requirements.

6.How does Aetrix verify that SMF6.0AT1 is sourced from the original manufacturer or authorized distributors?

All SMF6.0AT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMF6.0AT1 meets industry standards.

7.What is the process for return or replacement of SMF6.0AT1?

All SMF6.0AT1 units undergo pre-shipment inspection (PSI). If there is an issue with SMF6.0AT1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMF6.0AT1 part is unused and in its original packaging.

Return procedure for SMF6.0AT1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMF6.0AT1 Tags

  • SMF6.0AT1
  • SMF6.0AT1 PDF
  • SMF6.0AT1 Datasheet
  • SMF6.0AT1 Specifications
  • SMF6.0AT1 Images
  • onsemi
  • onsemi SMF6.0AT1
  • Buy SMF6.0AT1
  • SMF6.0AT1 Price
  • SMF6.0AT1 Distributor
  • SMF6.0AT1 Supplier
  • SMF6.0AT1 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER