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onsemi SMF7.5AT1
- Part No.:
- SMF7.5AT1
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SOD-123F
- Datasheet:
-
SMF7.5AT1.pdf
- Description:
- TVS DIODE 7.5VWM 12.9VC SOD123FL
- Quantity:
- Payment:
- Shipping:
Inventory:8,411
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Product details
Overview
SMF7.5AT1 from onsemi is a unidirectional Zener transient voltage suppressor (TVS) in SOD−123FL package, designed for primary overvoltage protection of DC power rails and signal lines. It features 7.5 V working peak reverse voltage (VRWM), 12.9 V maximum clamping voltage at 15.5 A peak pulse current, 200 W peak pulse power (10/1000 µs), <1 ns response time, and 50 µA max reverse leakage at VRWM - used in USB ports, low-voltage microcontroller I/O protection, and 5 V/3.3 V power supply rail clamping.
For engineers reviewing the SMF7.5AT1 datasheet, pinout, applications, or equivalent options, key selection criteria include verified clamping performance under 10/1000 µs surge, compatibility with 1.0 mm max height PCB layouts, IEC61000−4−2 Level 4 ESD immunity (>16 kV HBM), and SOD−123FL footprint compliance per ON Semiconductor's recommended 4.19 mm × 2.36 mm land pattern.
Technical Context
The SMF7.5AT1 operates as a silicon avalanche diode configured in unidirectional Zener mode, triggering conduction when reverse voltage exceeds its 8.33–9.21 V breakdown range (at 1 mA test current). Its low dynamic impedance ensures stable clamping during fast transients, while thermal resistance RθJA = 325°C/W (on FR-4 with minimum pad) supports reliable operation up to +150°C junction temperature.
It meets IEC61000−4−2 (±8 kV contact / ±15 kV air) and IEC61000−4−4 (40 A, 5/50 ns) immunity standards without external circuitry. The device is not intended for bidirectional suppression or AC line applications - polarity band clearly marks cathode, requiring correct orientation in series with protected node.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 7.5 V - Maximum continuous reverse operating voltage before clamping begins; matches 5 V logic rail with margin. |
| VBR (min/max) | 8.33 V / 9.21 V @ IT = 1 mA - Confirmed avalanche onset range; ensures predictable turn-on above nominal supply. |
| VC @ IPP | 12.9 V max @ 15.5 A - Clamped voltage during 10/1000 µs surge; limits downstream IC stress below 13.5 V absolute max ratings. |
| IPP | 15.5 A - Peak pulse current capability at rated clamping; sufficient for IEC61000−4−4 40 A source with series impedance. |
| IR @ VRWM | 50 µA max - Low leakage preserves battery life in always-on portable circuits; negligible loading on 7.5 V bias networks. |
| Response Time | <1 ns - Fast enough to protect CMOS inputs against ESD events prior to gate oxide breakdown. |
| ESD Rating | Class 3 HBM (>16 kV) - Exceeds JEDEC JS-001 requirements for handheld device touch interfaces. |
Pinout & Package
SOD−123FL surface-mount plastic package (Case 498−01), 1.0 mm max height, 4.19 mm × 2.36 mm footprint, matte tin lead finish, MSL 1 rated, reflow-compatible up to 260°C for 10 s. Cathode indicated by polarity band.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Cathode) | Anode-side connection point for reverse-biased protection path | Connected to protected line (e.g., USB D+); conducts surge current toward ground when voltage exceeds VRWM. |
| 2 (Anode) | Reference terminal tied to system ground or return path | Completes clamping loop; must be low-inductance connection to minimize VC overshoot during fast transients. |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile SOD−123FL package | 1.0 mm max height enables use in ultra-thin consumer devices (e.g., Bluetooth earbuds, wearables). |
| IEC61000−4−2 Level 4 compliance | Validated ±8 kV contact discharge protection eliminates need for secondary ESD stages in USB 2.0 interfaces. |
| 200 W peak pulse power (10/1000 µs) | Handles automotive load-dump surges and industrial switching noise without degradation over 1000+ events. |
| Fast <1 ns response | Clamps before ESD-induced latch-up occurs in sub-40 nm microcontrollers (e.g., STM32L4, nRF52840). |
| 100% matte tin lead finish | RoHS-compliant, solderable with standard SnPb or lead-free reflow profiles; no whisker risk. |
Applications
| USB 2.0 Data Line Protection | Microcontroller GPIO Clamp |
|---|---|
Use Scenario: Protecting D+ and D− lines in portable USB peripherals against ESD and cable-induced transients. IC Role / Device Role: Unidirectional TVS placed between data line and ground, with cathode to signal line. Use Value: Limits voltage to ≤12.9 V during ±15 kV air-gap ESD, preventing PHY layer damage while maintaining signal integrity up to 480 Mbps. |
Use Scenario: Safeguarding 3.3 V I/O pins of ARM Cortex-M MCUs in battery-powered sensors. IC Role / Device Role: Point-of-entry clamping diode mounted directly at connector or header pin. Use Value: 50 µA leakage avoids measurable battery drain; 12.9 V clamping stays within MCU's 13.5 V absolute max rating. |
| 5 V Power Rail Clamp | Industrial Sensor Signal Conditioning |
Use Scenario: Secondary overvoltage protection on regulated 5 V supply feeding analog front-ends. IC Role / Device Role: Parallel-connected TVS across input capacitor, triggered only during >7.5 V excursions. Use Value: 200 W surge rating absorbs 100 ms overvoltage events from faulty regulators without thermal runaway. |
Use Scenario: Protecting 4–20 mA current loop receiver inputs in PLC modules exposed to field wiring transients. IC Role / Device Role: Cathode tied to signal line, anode to local ground plane adjacent to op-amp input stage. Use Value: 15.5 A IPP handles IEC61000−4−4 40 A surge with series 25 Ω impedance; clamping holds op-amp input below 13 V. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient voltage suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ7.5A | Same VRWM (7.5 V), but SMA package (higher RθJA = 40°C/W), 400 W peak power, larger footprint (4.3 mm × 2.6 mm) | Better surge handling in space-tolerant designs; unsuitable for <1.2 mm height constraints | Select SMAJ7.5A only if board height >1.3 mm and surge duty cycle exceeds 1000×/hour. |
| P6SMB7.5A | Same VRWM, DO-214AA package, 600 W peak power, 100 µA IR @ VRWM, slower response (~1.5 ns) | Higher power dissipation needed for 24 V industrial bus protection; incompatible with fine-pitch SMT assembly | Choose P6SMB7.5A only when replacing legacy through-hole designs or when >500 W surge margin is mandatory. |
Compared with SMAJ7.5A and P6SMB7.5A, the SMF7.5AT1 provides optimal balance of ultra-low profile, validated IEC61000−4−2 Level 4 immunity, and precise 7.5 V clamping threshold - making it the preferred choice for modern compact USB, IoT sensor, and embedded power rail protection where board space and height are constrained.
Availability
SMF7.5AT1 is available at Aetrix Electronics and suitable for USB interface protection, microcontroller I/O hardening, and 5 V power rail clamping requiring stable component supply across high-mix production runs and long-lifecycle industrial programs.
Supply support for SMF7.5AT1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and IoT markets.
The SMF5.0AT1 Series was developed specifically for compact, high-reliability transient suppression in portable and space-constrained electronics - emphasizing low profile, fast response, and robust IEC/EN compliance without sacrificing surge endurance.
FAQ
What is the maximum clamping voltage of the SMF7.5AT1 under standard 10/1000 µs surge conditions?
The SMF7.5AT1 has a maximum clamping voltage (VC) of 12.9 V when subjected to its rated peak pulse current of 15.5 A under the 10/1000 µs waveform. This value is guaranteed across temperature and process variation per the official onsemi datasheet Rev. 0, page 3. Designers use this parameter to verify that downstream components remain within their absolute maximum voltage ratings during surge events. The SMF7.5AT1 maintains this clamping performance without derating up to +125°C ambient.
Can the SMF7.5AT1 be used for bidirectional transient suppression?
No, the SMF7.5AT1 is a unidirectional TVS diode and must be connected with cathode toward the protected line and anode to ground. It does not conduct in forward bias beyond ~1.25 V (VF @ 200 mA), so it cannot clamp positive transients on grounded lines. For bidirectional protection, two SMF7.5AT1 devices in series opposition or a dedicated bidirectional part like SMBJ7.5CA would be required. The SMF7.5AT1 datasheet explicitly defines it as "Uni−Directional TVS" on page 1.
What is the recommended PCB footprint for the SMF7.5AT1 in SOD−123FL package?
The recommended footprint for the SMF7.5AT1 is 4.19 mm × 2.36 mm (length × width), matching ON Semiconductor's Case 498−01 specification. This layout uses 0.91 mm pad width, 1.22 mm pad length, and 2.36 mm center-to-center spacing - optimized for self-alignment during reflow and thermal performance. Deviating from this footprint risks solder joint reliability or reduced power dissipation. The SMF7.5AT1 datasheet Figure 6 (page 6) provides exact dimensions and tolerances.
Does the SMF7.5AT1 meet IEC61000−4−4 40 A surge immunity?
Yes, the SMF7.5AT1 is rated for IEC61000−4−4 40 A surge protection per the manufacturer's specification on page 1. Its 200 W peak power rating (10/1000 µs) and 15.5 A IPP are validated to clamp 40 A waveforms when used with appropriate series impedance (e.g., 25 Ω current-limiting resistor). Real-world validation requires verifying layout inductance and grounding - the SMF7.5AT1 alone cannot guarantee full system-level compliance without proper PCB implementation.
What is the thermal resistance (RθJA) of the SMF7.5AT1, and how does it affect power handling?
The SMF7.5AT1 has a thermal resistance RθJA of 325°C/W when mounted on FR-4 with the recommended minimum pad size. This means a 100 mW steady-state dissipation raises the junction temperature by 32.5°C above ambient. Since the device is rated for 385 mW DC power at 25°C ambient, designers must apply derating curves (Figure 4, page 4) for higher temperatures. The SMF7.5AT1's RθJA directly limits its usable continuous power in thermally constrained environments - e.g., at 85°C ambient, max DC power drops to ~250 mW.
SMF7.5AT1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SOD-123F
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 7.5V
- Voltage - Breakdown (Min):
- 8.33V
- Voltage - Clamping (Max) @ Ipp:
- 12.9V
- Current - Peak Pulse (10/1000µs):
- 15.5A
- Power - Peak Pulse:
- 200W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123FL
SMF7.5AT1 FAQ
1.How can I place an order for SMF7.5AT1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SMF7.5AT1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMF7.5AT1 reliable?
The price and inventory of SMF7.5AT1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMF7.5AT1 is usually 5 days.
3.What payment methods are accepted for SMF7.5AT1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMF7.5AT1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMF7.5AT1?
SMF7.5AT1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMF7.5AT1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMF7.5AT1?
For technical support, including SMF7.5AT1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMF7.5AT1 requirements.
6.How does Aetrix verify that SMF7.5AT1 is sourced from the original manufacturer or authorized distributors?
All SMF7.5AT1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMF7.5AT1 meets industry standards.
7.What is the process for return or replacement of SMF7.5AT1?
All SMF7.5AT1 units undergo pre-shipment inspection (PSI). If there is an issue with SMF7.5AT1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMF7.5AT1 part is unused and in its original packaging.
Return procedure for SMF7.5AT1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMF7.5AT1 Tags
-
ESD9B5.0ST5G
onsemi
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DESD3V3E1BL-7B
Diodes Incorporated
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ESD5Z3.3T1G
onsemi
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D5V0H1B2LP-7B
Diodes Incorporated
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D5V0P1B2LP-7B
Diodes Incorporated
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DESD5V0U1BA-7
Diodes Incorporated
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ESD5Z5.0T1G
onsemi
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DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
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DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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