My Inquiry
My Account
onsemi SMF8.5AT1G
- Part No.:
- SMF8.5AT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SOD-123F
- Datasheet:
-
SMF8.5AT1G.pdf
- Description:
- TVS DIODE 8.5VWM 14.4VC SOD123FL
- Quantity:
- Payment:
- Shipping:
Inventory:2,202
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SMF8.5AT1G from onsemi is a unidirectional Zener transient voltage suppressor (TVS) diode in SOD-123FL package, designed for primary overvoltage protection of DC power rails and signal lines. It features 8.5 V working peak reverse voltage (VRWM), 14.4 V maximum clamping voltage at 13.9 A peak pulse current, and 200 W peak pulse power rating per 10/1000 µs waveform - ideal for protecting USB ports, low-voltage microcontroller I/O, and battery-charging circuits against ESD and surge events.
For engineers reviewing the SMF8.5AT1G datasheet, pinout, applications, or equivalent options, key selection criteria include VRWM margin vs. system operating voltage, clamping voltage headroom relative to IC absolute maximum ratings, IEC 61000-4-2 Level 4 compliance, and SOD-123FL footprint compatibility with space-constrained portable designs.
Technical Context
The SMF8.5AT1G operates as a unidirectional avalanche diode, triggering when reverse voltage exceeds its breakdown threshold (9.44–10.4 V at 1 mA test current) to shunt transient energy to ground. Its low zener impedance and sub-1 ns response time ensure rapid clamping before downstream components experience overstress.
It delivers 200 W peak pulse power handling (10/1000 µs waveform) with thermal resistance of 325 °C/W (junction-to-ambient, FR-4 board), enabling robust protection without external heat sinking in typical consumer-grade PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Working Peak Reverse Voltage (VRWM) | 8.5 V - sets minimum system operating voltage margin; must be ≥ nominal rail voltage (e.g., 5 V or 3.3 V bus) to avoid leakage during normal operation |
| Breakdown Voltage (VBR) | 9.44–10.4 V @ 1 mA - defines precise conduction onset; ensures reliable turn-on before IC damage thresholds are exceeded |
| Maximum Clamping Voltage (VC) | 14.4 V @ 13.9 A - limits peak transient voltage seen by protected circuitry; critical for safeguarding 16 V-tolerant I/O pins |
| Peak Pulse Power (Ppk) | 200 W @ 10/1000 µs - supports high-energy surges such as lightning-induced transients in industrial interfaces |
| ESD Rating | Class 3 (>16 kV HBM); IEC 61000-4-2 Level 4 (±8 kV contact / ±15 kV air) - meets stringent end-equipment immunity requirements |
| Leakage Current (IR) | 10 µA max @ 8.5 V - minimizes standby power loss in always-on battery-powered systems |
| Package | SOD-123FL - 2.7 × 1.6 mm footprint, 1.0 mm max height; compatible with automated pick-and-place and reflow soldering (MSL 1, 260°C peak) |
Pinout & Package
SOD-123FL surface-mount package: cathode-indicated flat lead outline with polarity band; 2-terminal configuration optimized for low-inductance transient shunting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Banded End) | Cathode | Connected to protected line (e.g., VBUS, data line); reverse-biased during normal operation; conducts to ground during overvoltage |
| 2 (Non-banded End) | Anode | Connected to system ground; provides low-impedance return path for surge current; requires short, wide trace to minimize inductance |
Key Features
| Feature | Design Value |
|---|---|
| Low-profile SOD-123FL package | 1.0 mm max height enables use in ultra-thin mobile devices and wearables where Z-height is constrained |
| Fast response time | <1 ns turn-on ensures clamping occurs before transient energy couples into sensitive analog or digital circuitry |
| Pb-free construction | 100% matte tin lead finish complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 MSL 1 reflow profile |
| High surge capability | Rated for 13.9 A peak pulse current (10/1000 µs) - sufficient to absorb multiple IEC 61000-4-5 40 A surges without degradation |
| Small footprint area | 8.45 mm² layout area reduces PCB real estate cost and improves routing density in multi-rail power domains |
Applications
| USB 2.0 Data Line Protection | Li-ion Battery Charging Input |
|---|---|
Use Scenario: Protecting D+ and D− lines of USB peripherals against ESD events during hot-plug insertion. IC Role / Device Role / Timing Role: Unidirectional TVS diode placed in series with each data line, referenced to ground, clamping fast transients before they reach USB transceiver IC. Use Value: Ensures >15 kV air-gap ESD immunity per IEC 61000-4-2 Level 4 while maintaining signal integrity due to low capacitance (<100 pF @ 0 V). |
Use Scenario: Safeguarding input terminals of linear or switching battery chargers exposed to automotive jump-start or adapter misconnection. IC Role / Device Role / Timing Role: Primary overvoltage clamp on VIN rail, activated before charger IC's internal OVP threshold (typically 16–20 V) is breached. Use Value: Limits transient voltage to ≤14.4 V, preventing latch-up or permanent damage to charger controller and associated MOSFETs. |
| Industrial Sensor Signal Conditioning | Smartphone Front-Facing Camera Module |
Use Scenario: Shielding 0–10 V analog output lines of pressure/temperature sensors from induced surges in factory automation environments. IC Role / Device Role / Timing Role: Low-leakage (≤10 µA) TVS placed across sensor output and ground, preserving accuracy during normal operation while reacting within nanoseconds to transients. Use Value: Maintains <0.1% full-scale error contribution from leakage while surviving repeated 40 A IEC 61000-4-4 bursts without parameter shift. |
Use Scenario: Protecting camera module I²C clock/data lines and reset signals from ESD during assembly and field handling. IC Role / Device Role / Timing Role: Compact SOD-123FL TVS mounted directly at connector interface, minimizing trace length to reduce inductive overshoot during ESD discharge. Use Value: Enables compliance with IEC 61000-4-2 Level 4 (±8 kV contact) in <0.5 mm² PCB area per line - critical for high-density mobile camera flex circuits. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient suppression applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SMAJ8.5A | Same VRWM (8.5 V) and VC (14.4 V), but SMA package (4.5 × 2.7 mm) - 3× larger footprint and 2.5× higher junction-to-ambient thermal resistance (80 °C/W) | Suitable for non-space-constrained industrial boards; less optimal for handheld devices due to size and thermal limitations | Select SMAJ8.5A only if legacy SMA footprint exists or higher single-pulse energy (400 W) is required beyond SMF8.5AT1G's 200 W rating |
| 1.5SMC8.5A | Higher peak power (1500 W), DO-214AB package (7.1 × 6.2 mm); VRWM = 8.5 V, VC = 14.4 V - identical clamping behavior but significantly larger and slower (typ. 1.5 ns response) | Used in AC mains input stages or telecom power supplies where surge energy exceeds 200 W capability | Choose 1.5SMC8.5A when protecting AC/DC front-ends subject to lightning surges; avoid for high-speed data lines due to parasitic capacitance and size |
Compared with SMAJ8.5A and 1.5SMC8.5A, the SMF8.5AT1G offers superior space efficiency and thermal performance for portable electronics, while delivering identical clamping voltage and ESD robustness - making it the preferred choice where board area and thin-profile mounting are design priorities.
Availability
SMF8.5AT1G is available at Aetrix Electronics and suitable for USB interface protection, Li-ion charging input safeguarding, and industrial sensor signal conditioning requiring stable component supply across high-mix production runs.
Supply support for SMF8.5AT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (Nasdaq: ON) is a global semiconductor leader delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The SMF5.0AT1 Series belongs to onsemi's transient voltage suppression portfolio, engineered specifically for compact, high-reliability DC rail and signal-line protection in portable and space-constrained electronics.
FAQ
What is the working peak reverse voltage (VRWM) specification for SMF8.5AT1G?
The SMF8.5AT1G has a working peak reverse voltage (VRWM) of 8.5 V, meaning it remains non-conductive up to this DC or continuous peak voltage level. This value is selected to provide adequate margin above common system rails like 5 V or 3.3 V while ensuring minimal leakage current (≤10 µA) during normal operation - a critical requirement for battery-powered devices where standby current must be tightly controlled.
How does the clamping voltage of SMF8.5AT1G compare to its breakdown voltage?
The SMF8.5AT1G exhibits a breakdown voltage (VBR) range of 9.44–10.4 V at 1 mA test current, while its maximum clamping voltage (VC) is 14.4 V at 13.9 A peak pulse current. This ~4 V differential reflects the device's dynamic impedance under surge conditions and ensures protected circuitry sees no more than 14.4 V during worst-case transients - well below typical 16 V absolute maximum ratings of USB PHYs and microcontroller I/O pins.
Is SMF8.5AT1G compliant with IEC 61000-4-2 ESD standards?
Yes, the SMF8.5AT1G is rated for IEC 61000-4-2 Level 4 ESD protection: ±8 kV contact discharge and ±15 kV air-gap discharge. This compliance is verified per onsemi's characterization and is intrinsic to the device's Zener structure and low-capacitance SOD-123FL packaging - making SMF8.5AT1G suitable for end-equipment certification in consumer and industrial markets without additional external filtering.
What is the thermal resistance of SMF8.5AT1G under standard PCB mounting conditions?
When mounted on a standard FR-4 PCB with recommended minimum pad size, the SMF8.5AT1G has a junction-to-ambient thermal resistance (RJA) of 325 °C/W. This value supports continuous power dissipation up to 385 mW at 25°C ambient, and derates linearly above that temperature - enabling reliable operation in sealed enclosures or high-temperature industrial environments without forced airflow or heatsinking.
Can SMF8.5AT1G be used in bidirectional protection configurations?
No, the SMF8.5AT1G is a unidirectional TVS diode and is not suitable for bidirectional signal line protection (e.g., RS-485, CAN). Its electrical characteristics - including forward voltage (~1.25 V @ 200 mA) and asymmetric breakdown behavior - are specified only for reverse-biased operation. For bidirectional applications, a dedicated bidirectional TVS such as SMBJ8.5CA or an appropriately paired dual-diode array must be used instead of SMF8.5AT1G.
SMF8.5AT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SOD-123F
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Type:
- Zener
- Unidirectional Channels:
- 1
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 8.5V
- Voltage - Breakdown (Min):
- 9.44V
- Voltage - Clamping (Max) @ Ipp:
- 14.4V
- Current - Peak Pulse (10/1000µs):
- 13.9A
- Power - Peak Pulse:
- 200W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOD-123FL
SMF8.5AT1G FAQ
1.How can I place an order for SMF8.5AT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for SMF8.5AT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMF8.5AT1G reliable?
The price and inventory of SMF8.5AT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMF8.5AT1G is usually 5 days.
3.What payment methods are accepted for SMF8.5AT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMF8.5AT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMF8.5AT1G?
SMF8.5AT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMF8.5AT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMF8.5AT1G?
For technical support, including SMF8.5AT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMF8.5AT1G requirements.
6.How does Aetrix verify that SMF8.5AT1G is sourced from the original manufacturer or authorized distributors?
All SMF8.5AT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMF8.5AT1G meets industry standards.
7.What is the process for return or replacement of SMF8.5AT1G?
All SMF8.5AT1G units undergo pre-shipment inspection (PSI). If there is an issue with SMF8.5AT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMF8.5AT1G part is unused and in its original packaging.
Return procedure for SMF8.5AT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMF8.5AT1G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
-
D5V0L1B2WS-7
Diodes Incorporated
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
