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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SMM2348ES-T1-GE3

Name: SMM2348ES-T1-GE3
Brand: Vishay Siliconix
SKU: SMM2348ES-T1-GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SMM2348ES-T1-GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SMM2348ES-T1-GE3.pdf

Description:: MOSFET N-CH 30V 8A SOT23-3

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Product details

Overview

SMM2348ES-T1-GE3 from Vishay Siliconix is a medical-grade N-channel TrenchFET® MOSFET with 30 V V_DS, 8 A continuous drain current at 25 °C, 0.024 Ω R_DS(on) at V_GS = 10 V, and 175 °C maximum junction temperature - designed for high-reliability power switching in implantable and portable medical devices.

For engineers reviewing the SMM2348ES-T1-GE3 datasheet, SMM2348ES-T1-GE3 pinout, SMM2348ES-T1-GE3 application, or SMM2348ES-T1-GE3 equivalent, key selection criteria include its 175 °C rated junction temperature, 100 % UIS-tested ruggedness, SOT-23 package thermal performance (R_thJA = 166 °C/W), and medical compliance per material categorization per Vishay Doc. #99912.

Technical Context

This device implements a trench-gate silicon process optimized for low R_DS(on) and fast switching in compact SOT-23 packages. Its gate threshold voltage (1.5–2.5 V) enables compatibility with 3.3 V and 5 V logic-level drive, while its 7.95 nC typical total gate charge supports efficient PWM control in battery-powered systems.

The integrated body diode exhibits 0.8–1.2 V forward voltage at 3.5 A, and the device is fully characterized for avalanche energy (E_AS = 12 mJ) and pulsed current (I_DM = 32 A), supporting robust operation under transient overload conditions common in medical power rails.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for low-voltage medical power stages (e.g., battery-fed motor drivers or sensor bias rails).
R_DS(on) @ V_GS = 10 V	0.024 Ω - Enables <192 mW conduction loss at 8 A, critical for thermally constrained PCB layouts.
R_DS(on) @ V_GS = 4.5 V	0.032 Ω - Ensures reliable turn-on with standard 3.3 V microcontroller GPIOs without level-shifting.
I_D (continuous, T_C = 25 °C)	8 A - Supports peak load currents in portable defibrillator charging circuits or infusion pump motor drivers.
T_J max	+175 °C - Certified for long-term operation in sterilizable or implanted environments where ambient temperatures exceed 125 °C.
Q_g (typ.)	7.95 nC - Reduces gate-drive power and switching losses in high-frequency (>100 kHz) DC-DC converters.
E_AS	12 mJ - Withstands single-pulse inductive kickback from solenoid valves or relay coils without failure.

Pinout & Package

Package: TO-236 (SOT-23), surface-mount, 3-terminal plastic package with drain-connected tab for thermal relief. Standard marking code: MAxxx.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to ground or low-side return path in high-side switch configurations.
2 (Gate)	Control input for channel conduction	Accepts logic-level voltage (≥2.5 V) to fully enhance; requires <100 nA leakage current at ±20 V.
3 (Drain)	High-side power output terminal	Carries switched load current; internally connected to exposed pad for improved thermal transfer to PCB copper.

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 24 mΩ R_DS(on) in SOT-23 - among lowest available for 30 V medical MOSFETs in this footprint.
100 % UIS tested	Each unit validated for unclamped inductive switching stress, ensuring field reliability in solenoid and motor control.
175 °C rated junction	Qualified for extended operation in autoclave-sterilized equipment and high-temperature wearable sensors.
Lead (Pb)-free & halogen-free	Complies with IEC 61249-2-21 and Vishay's material categorization per Doc. #99912 for medical use.
Low C_iss (430–540 pF)	Minimizes capacitive loading on microcontroller GPIOs and reduces EMI in sensitive diagnostic signal paths.

Applications

Portable Infusion Pumps	Implantable Neurostimulators
Use Scenario: Precision current control for stepper motor actuation in ambulatory drug delivery systems. IC Role / Device Role / Timing Role: Low-side power switch regulating motor phase current via PWM at 20–50 kHz. Use Value: 0.032 Ω R_DS(on) at 4.5 V ensures full enhancement from MCU GPIOs, eliminating external level shifters and reducing BOM count.	Use Scenario: High-efficiency, ultra-low-noise power switching in battery-operated neural signal amplifiers. IC Role / Device Role / Timing Role: Load switch enabling/disabling analog front-end circuitry during sleep/wake cycles. Use Value: 100 nA max gate leakage and 175 °C rating support >10-year operational life in hermetically sealed implants exposed to body heat.
Wearable Vital Sign Monitors	Handheld Diagnostic Ultrasound
Use Scenario: Power management for multi-sensor modules (ECG, SpO₂, temperature) in patch-style monitors. IC Role / Device Role / Timing Role: Battery protection FET isolating Li-ion cell from system during fault conditions. Use Value: 30 V V_DS and 32 A pulsed current capability allow safe handling of battery overvoltage and short-circuit transients.	Use Scenario: Transmit/receive (T/R) switch control in compact ultrasound probe driver circuits. IC Role / Device Role / Timing Role: Fast-switching high-side switch synchronizing HV pulse generation with echo sampling windows. Use Value: 7 ns typical turn-on delay and 8 ns rise time enable precise timing alignment within 100 ns windows required for beamforming accuracy.

Portable Infusion Pumps

Implantable Neurostimulators

Use Scenario: Precision current control for stepper motor actuation in ambulatory drug delivery systems.

IC Role / Device Role / Timing Role: Low-side power switch regulating motor phase current via PWM at 20–50 kHz.

Use Value: 0.032 Ω R_DS(on) at 4.5 V ensures full enhancement from MCU GPIOs, eliminating external level shifters and reducing BOM count.

Use Scenario: High-efficiency, ultra-low-noise power switching in battery-operated neural signal amplifiers.

IC Role / Device Role / Timing Role: Load switch enabling/disabling analog front-end circuitry during sleep/wake cycles.

Use Value: 100 nA max gate leakage and 175 °C rating support >10-year operational life in hermetically sealed implants exposed to body heat.

Wearable Vital Sign Monitors

Handheld Diagnostic Ultrasound

Use Scenario: Power management for multi-sensor modules (ECG, SpO₂, temperature) in patch-style monitors.

IC Role / Device Role / Timing Role: Battery protection FET isolating Li-ion cell from system during fault conditions.

Use Value: 30 V V_DS and 32 A pulsed current capability allow safe handling of battery overvoltage and short-circuit transients.

Use Scenario: Transmit/receive (T/R) switch control in compact ultrasound probe driver circuits.

IC Role / Device Role / Timing Role: Fast-switching high-side switch synchronizing HV pulse generation with echo sampling windows.

Use Value: 7 ns typical turn-on delay and 8 ns rise time enable precise timing alignment within 100 ns windows required for beamforming accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
Si2308DS-T1-GE3	R_DS(on) = 0.035 Ω @ 4.5 V; lower V_DS (20 V); no 175 °C rating	Not qualified for sterilization or implantable use; limited to external-wearable diagnostics	Select only if operating voltage ≤20 V and junction temperature remains <150 °C.
DMN3028LSD-13	Higher R_DS(on) (0.032 Ω @ 4.5 V same, but 0.042 Ω @ 175 °C vs. 0.042 Ω for SMM2348ES); dual-N package	Includes matched pair for H-bridge; lacks medical material certification	Use when dual-channel topology is needed and medical compliance is not required.

Compared with Si2308DS-T1-GE3 and DMN3028LSD-13, the SMM2348ES-T1-GE3 uniquely combines 175 °C operation, 30 V rating, and Vishay's medical material compliance - making it the only option qualified for sterilizable or chronically implanted medical hardware requiring long-term thermal stability.

Availability

SMM2348ES-T1-GE3 is available at Aetrix Electronics and suitable for portable infusion pumps, implantable neurostimulators, and handheld diagnostic ultrasound systems requiring stable component supply across multi-year medical device production lifecycles.

Supply support for SMM2348ES-T1-GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for demanding industrial and medical applications.

The SMM2348ES-T1-GE3 belongs to Vishay's medical-grade TrenchFET® family, engineered specifically for power switching in sterilizable, implantable, and battery-constrained medical electronics where thermal resilience and material safety are non-negotiable.

FAQ

What is the maximum continuous drain current for SMM2348ES-T1-GE3 at 125 °C case temperature?

The SMM2348ES-T1-GE3 supports 4.8 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the SOT-23 package under real-world PCB mounting conditions (1" square FR-4 board), and must be verified against actual layout thermal resistance in the target application.

Does SMM2348ES-T1-GE3 have a qualified medical material classification?

Yes, the SMM2348ES-T1-GE3 is categorized per Vishay's material compliance standard (Doc. #99912) for medical applications. It is lead (Pb)-free and halogen-free, and manufactured using a high-reliability SMM process flow - explicitly designated for medical use in the product summary and ordering information.

Is SMM2348ES-T1-GE3 suitable for avalanche-rated operation?

Yes, the SMM2348ES-T1-GE3 is 100 % unclamped inductive switching (UIS) tested and rated for single-pulse avalanche energy of 12 mJ (E_AS) and current of 15.5 A (I_AS). These values are measured per JEDEC JESD24-1 and apply under specified test conditions (L = 0.1 mH, T_J = 25 °C).

What is the gate threshold voltage range for SMM2348ES-T1-GE3?

The gate threshold voltage (V_GS(th)) for SMM2348ES-T1-GE3 is specified as 1.5 V (min), 2.0 V (typ), and 2.5 V (max) at V_DS = V_GS and I_D = 250 μA. This range ensures consistent turn-on behavior across process variation and supports direct drive from 3.3 V logic without external gate drivers.

How does the thermal resistance of SMM2348ES-T1-GE3 compare between junction-to-ambient and junction-to-foot?

The SMM2348ES-T1-GE3 has R_thJA = 166 °C/W (PCB mount) and R_thJF = 50 °C/W (junction-to-foot). The significantly lower R_thJF indicates that thermal transfer through the drain pad to underlying copper is far more efficient than convection from the package top - confirming optimal layout practice requires maximizing drain-pad copper area and thermal vias.

SMM2348ES-T1-GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 24mOhm @ 12A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 14.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 540 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 3W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SMM2348ES-T1-GE3 FAQ

1.How can I place an order for SMM2348ES-T1-GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMM2348ES-T1-GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMM2348ES-T1-GE3 reliable?

The price and inventory of SMM2348ES-T1-GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMM2348ES-T1-GE3 is usually 5 days.

3.What payment methods are accepted for SMM2348ES-T1-GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMM2348ES-T1-GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMM2348ES-T1-GE3?

SMM2348ES-T1-GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMM2348ES-T1-GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMM2348ES-T1-GE3?

For technical support, including SMM2348ES-T1-GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMM2348ES-T1-GE3 requirements.

6.How does Aetrix verify that SMM2348ES-T1-GE3 is sourced from the original manufacturer or authorized distributors?

All SMM2348ES-T1-GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMM2348ES-T1-GE3 meets industry standards.

7.What is the process for return or replacement of SMM2348ES-T1-GE3?

All SMM2348ES-T1-GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SMM2348ES-T1-GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMM2348ES-T1-GE3 part is unused and in its original packaging.

Return procedure for SMM2348ES-T1-GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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