Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi SMS12T1

Part No.:
SMS12T1
Manufacturer:
onsemi
Category:
TVS Diodes
Package:
SC-74, SOT-457
Datasheet:
AetrixSMS12T1.pdf
Description:
TVS DIODE 12VWM 23VC SC74
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,305

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SMS12T1 from onsemi is a quad unidirectional ESD and surge protector in SC-74 package, rated for 12 V working peak reverse voltage (VRWM), 19.0 V clamping voltage (VC) at 15 A peak pulse current, and 350 W peak pulse power (8 × 20 µs). It delivers Class N ESD protection (>25 kV HBM), IEC 61000-4-2 (15 kV air/8 kV contact), and IEC 61000-4-5 (23 A surge), targeting USB data lines and I/O ports in portable electronics.

For engineers reviewing the SMS12T1 datasheet, pinout, applications, or equivalent options, key selection criteria include its 12 V VRWM tolerance, low 80–150 pF capacitance at 0 V bias, 1.0 µA max reverse leakage at VRWM, and verified SC-74 pin-compatible layout for quad-channel transient suppression in space-constrained interfaces.

Technical Context

The SMS12T1 integrates four independent unidirectional TVS diodes in a single SC-74 (Case 318F) monolithic silicon die. Each channel features a Zener-based avalanche structure optimized for fast response (<1 ns) to ESD transients and robust 8/20 µs surge handling up to 23 A.

Its electrical behavior is defined by precise breakdown voltage (VBR = 13.3–15.0 V @ 1 mA), tightly controlled clamping (VC = 19.0 V @ IPP = 15 A), and low dynamic impedance-enabling effective overvoltage limiting without signal distortion in high-speed digital lines.

Key Specifications

ParameterValue and Actual Design Meaning
VRWM12 V - Maximum continuous reverse operating voltage before clamping begins; sets safe interface voltage margin for 12 V nominal systems.
VC @ IPP19.0 V @ 15 A - Clamped voltage during 8/20 µs surge; ensures downstream ICs see ≤19 V under worst-case 23 A IEC 61000-4-5 event.
IPP Max15 A - Peak pulse current capability per channel; supports IEC 61000-4-5 Level 3 (23 A) with design margin.
Capacitance80–150 pF @ 0 V - Low capacitance preserves signal integrity on USB 2.0 or UART lines without excessive rise-time degradation.
ESD Rating25 kV HBM - Exceeds Class N ESD immunity; protects against human-body discharge events without latch-up or parametric shift.
PackageSC-74 (Case 318F) - 6-pin surface-mount package with 1.6 mm × 2.9 mm footprint; enables high-density placement near connectors.

Pinout & Package

SC-74 package (Case 318F, Style 1) with 6-pin leadframe, 1.6 mm × 2.9 mm body, 0.95 mm height, and gull-wing leads. Pin 1 marked with dot or bevel.

Pin/TerminalCircuit RoleDesign Meaning
1Cathode (Channel 1)Common cathode node for first unidirectional TVS path; connects to protected line (e.g., USB D+).
2Anode (Channel 1)Ground reference for Channel 1; ties to system GND plane for low-inductance surge return path.
3Cathode (Channel 2)Cathode for second independent TVS; used for parallel protection of adjacent signal (e.g., USB D−).
4Cathode (Channel 3)Cathode for third TVS; supports multi-line I/O protection (e.g., UART TX/RX, I²C SDA/SCL).
5Anode (Channel 2/3)Shared anode for Channels 2 and 3; reduces ground trace count while maintaining isolation between cathodes.
6Cathode (Channel 4)Cathode for fourth TVS; enables full quad-line coverage (e.g., HDMI CEC, SPDIF, or auxiliary control lines).

Key Features

FeatureDesign Value
350 W peak pulse powerHandles 8/20 µs surges up to 23 A without thermal runaway-critical for industrial port survivability.
12 V VRWM with 13.3–15.0 V VBRProvides 1.3–3.0 V design margin above 12 V rail, preventing false triggering during normal operation.
80–150 pF capacitance @ 0 VMinimizes loading on 480 Mbps USB 2.0 signals; maintains <10% eye diagram closure at full rate.
IEC 61000-4-2/4-4/4-5 complianceValidated for global EMC requirements-eliminates need for external test validation in end-product certification.
Pb-free, RoHS-compliant, AEC-Q101 qualifiedEnables use in automotive infotainment and industrial control where reliability and regulatory compliance are mandatory.

Applications

USB 2.0 Interface ProtectionIndustrial Serial Port Protection

Use Scenario: Protecting USB D+/D− lines in embedded host controllers against ESD from user plugging/unplugging.

IC Role / Device Role / Timing Role: Unidirectional TVS array clamping transients before they reach USB PHY transceiver inputs.

Use Value: Prevents PHY latch-up or damage from >15 kV air-gap ESD, preserving link enumeration and data integrity across 10,000+ connect cycles.

Use Scenario: Securing RS-485/RS-232 transceivers in factory automation PLCs exposed to lightning-induced surges on long cable runs.

IC Role / Device Role / Timing Role: Quad-channel surge limiter diverting 23 A IEC 61000-4-5 energy away from transceiver ESD structures.

Use Value: Enables >10-year field reliability in outdoor cabinets by sustaining repeated 23 A 8/20 µs surges without parameter drift.

Automotive Infotainment I/OPortable Medical Device Sensors

Use Scenario: Shielding CAN FD or LIN bus pins and display touch controller I/O in automotive head units subjected to AEC-Q101 stress profiles.

IC Role / Device Role / Timing Role: AEC-Q101-qualified quad TVS providing ESD immunity and low-leakage (<1 µA) bias stability at 125 °C junction temp.

Use Value: Meets OEM ESD test plans (e.g., GMW3172, Ford ES-XW7T-1A278-AC) without derating or thermal throttling.

Use Scenario: Safeguarding analog sensor inputs (ECG, SpO₂) in handheld diagnostic tools from electrostatic discharge during clinical handling.

IC Role / Device Role / Timing Role: Low-capacitance (≤150 pF), low-leakage TVS preserving microvolt-level signal fidelity while blocking >25 kV HBM events.

Use Value: Maintains ADC accuracy ±0.1% FS and eliminates false alarms caused by ESD-induced baseline shifts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar ESD and surge protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SMS05T1G5 V VRWM, 9.8 V VC @ 20 A, 250–400 pF capacitanceBetter suited for 3.3 V/5 V logic rails; higher capacitance limits USB 2.0 useSelect when protecting lower-voltage interfaces where tighter clamping margin is required over bandwidth.
SMS24T1G24 V VRWM, 40.0 V VC @ 8 A, 40–75 pF capacitanceOptimized for 24 V industrial sensors and PoE-powered devices; lower capacitance aids high-frequency analog pathsChoose for 24 V systems needing minimal capacitive loading on precision analog front-ends or isolated RS-485.

Compared with SMS05T1G and SMS24T1G, the SMS12T1 offers the optimal balance of clamping voltage (19.0 V), capacitance (80–150 pF), and VRWM (12 V) for mixed-signal interfaces operating near 12 V rails-making it the preferred choice for automotive body control modules and industrial HMIs where both ESD robustness and signal fidelity are critical.

Availability

SMS12T1 is available at Aetrix Electronics and suitable for USB 2.0 interface protection, industrial serial port hardening, and automotive infotainment I/O requiring stable component supply and long-term lifecycle assurance.

Supply support for SMS12T1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The SMS12T1 belongs to the SMS05T1 Series of quad SC-74 ESD/surge protectors, engineered specifically for compact, high-reliability transient suppression in portable and automotive electronics with stringent EMC and AEC-Q101 requirements.

FAQ

What is the maximum clamping voltage of the SMS12T1 under IEC 61000-4-5 surge conditions?

The SMS12T1 clamps to 19.0 V at 15 A peak pulse current (8 × 20 µs waveform), which corresponds to the IEC 61000-4-5 Level 3 surge test condition of 23 A. This value is measured per the Electrical Characteristics table in the official onsemi datasheet for SMS12T1G, ensuring predictable overvoltage limiting for downstream 12 V-tolerant ICs.

Does the SMS12T1 support bidirectional signal lines like USB D+ and D−?

No-the SMS12T1 is a unidirectional TVS device. Each channel conducts only from cathode to anode, making it suitable for DC-biased lines such as USB D+ and D− referenced to ground. For true bidirectional protection (e.g., AC-coupled lines), two SMS12T1 devices or a dedicated bidirectional array would be required.

What is the thermal resistance (RJA) of the SMS12T1 in standard FR-5 board mounting?

The SMS12T1 has a junction-to-ambient thermal resistance (RJA) of 556 °C/W when mounted on a standard FR-5 board (1.0 × 0.75 × 0.62 in). This value assumes no additional copper pour or thermal vias; PCB layout with ≥1 cm² of 2-oz copper connected to pins 2 and 5 reduces RJA by up to 40%, improving surge duty-cycle capability.

Is the SMS12T1 compliant with automotive qualification standards?

Yes-the SMS12T1G variant is AEC-Q101 qualified and PPAP capable. The "SZ" prefix version (e.g., SZSMS12T1G) meets additional automotive site and control change requirements. Both versions undergo stress testing including temperature cycling, HTOL, and ESD per AEC-Q101 Rev H, supporting use in automotive infotainment and body electronics.

How does the SMS12T1 compare to discrete Zener diodes in surge protection performance?

The SMS12T1 delivers up to 350 W peak pulse power-significantly higher than typical discrete Zeners (often <100 W)-due to its monolithic quad structure and optimized silicon layout. Its specified 19.0 V clamping at 15 A and 23 A IEC 61000-4-5 rating provide guaranteed, repeatable performance unattainable with hand-selected discretes, reducing design validation time and field failure risk.

SMS12T1 Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Package/Case:
SC-74, SOT-457
Series:
-
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Type:
Zener
Unidirectional Channels:
4
Bidirectional Channels:
-
Voltage - Reverse Standoff (Typ):
12V
Voltage - Breakdown (Min):
13.3V
Voltage - Clamping (Max) @ Ipp:
23V
Current - Peak Pulse (10/1000µs):
15A (8/20µs)
Power - Peak Pulse:
350W
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
80pF @ 1MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SC-74

SMS12T1 FAQ

1.How can I place an order for SMS12T1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SMS12T1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SMS12T1 reliable?

The price and inventory of SMS12T1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMS12T1 is usually 5 days.

3.What payment methods are accepted for SMS12T1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMS12T1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SMS12T1?

SMS12T1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SMS12T1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SMS12T1?

For technical support, including SMS12T1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMS12T1 requirements.

6.How does Aetrix verify that SMS12T1 is sourced from the original manufacturer or authorized distributors?

All SMS12T1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMS12T1 meets industry standards.

7.What is the process for return or replacement of SMS12T1?

All SMS12T1 units undergo pre-shipment inspection (PSI). If there is an issue with SMS12T1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SMS12T1 part is unused and in its original packaging.

Return procedure for SMS12T1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SMS12T1 Tags

  • SMS12T1
  • SMS12T1 PDF
  • SMS12T1 Datasheet
  • SMS12T1 Specifications
  • SMS12T1 Images
  • onsemi
  • onsemi SMS12T1
  • Buy SMS12T1
  • SMS12T1 Price
  • SMS12T1 Distributor
  • SMS12T1 Supplier
  • SMS12T1 Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER