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onsemi SMS24CT1G
- Part No.:
- SMS24CT1G
- Manufacturer:
- onsemi
- Category:
- TVS Diodes
- Package:
- SOT-23-6 Thin, TSOT-23-6
- Datasheet:
-
SMS24CT1G.pdf
- Description:
- TVS DIODE 24VWM 44VC 6TSOP
- Quantity:
- Payment:
- Shipping:
Inventory:18,055
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Product details
Overview
SMS24CT1G from onsemi is a 5-line ESD protection diode array in a TSOP-6 package with common-anode monolithic construction, reverse working voltage of 24 V, clamping voltage of 40 V at 5 A, and peak pulse current rating of 8.0 A (8 × 20 µs). It protects serial/parallel ports and automotive I/O lines against IEC 61000-4-2 ESD events up to 15 kV (air) and 8 kV (contact).
For engineers reviewing the SMS24CT1G datasheet, pinout, applications, or equivalent options, key selection criteria include its 24 V VRWM for 24 V rail protection, low 60–75 pF line-to-GND capacitance, AEC-Q101 qualification for automotive use, and TSOP-6 footprint compatibility with space-constrained PCB layouts.
Technical Context
The SMS24CT1G implements a monolithic common-anode surge protection architecture, enabling five independent cathode terminals (Pins 1, 3, 4, 5, 6) sharing one anode (Pin 2) to clamp transients across multiple signal lines simultaneously. Its silicon design targets fast response to ESD and lightning-induced surges without latch-up.
It meets IEC 61000-4-2 Level 4 (±15 kV air, ±8 kV contact), exceeds HBM Class 3B (>8 kV) and MM Class C (>400 V), and operates over −40 °C to +150 °C junction temperature - validated for under-hood automotive environments and industrial networking interfaces.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VRWM | 24 V - Maximum continuous DC or peak AC voltage the device blocks without conduction; matches 24 V system rails. |
| VBR (min) | 26.7 V - Breakdown initiates above 26.7 V at 1 mA test current, ensuring reliable clamping onset above normal operating voltage. |
| VC @ IPP = 5 A | 40 V - Clamps transient peaks to ≤40 V when subjected to 5 A 8 × 20 µs surge, limiting downstream IC stress. |
| IPP (max) | 8.0 A - Withstands single non-repetitive 8 × 20 µs pulses up to 8 A, suitable for moderate-energy surge environments. |
| CJ (max) | 75 pF - Line-to-GND capacitance limits signal distortion on high-speed lines such as USB 2.0 or RS-485. |
| ESD Rating | IEC 61000-4-2: ±15 kV air / ±8 kV contact - Certified immunity level for end-equipment compliance testing. |
| Package | TSOP-6 (Case 318G) - 3.00 × 1.50 × 0.90 mm surface-mount package with 0.95 mm lead pitch, optimized for dense PCB layouts. |
Pinout & Package
TSOP-6 package (Case 318G), dimensions 3.00 × 1.50 × 0.90 mm, 0.95 mm lead pitch, Pb-free, UL 94 V-0 rated.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Cathode | Protected line 1 input; connects to I/O trace requiring ESD clamping to common anode (Pin 2). |
| 2 | Anode | Common return path to GND or protected rail; shared by all five cathodes for compact layout. |
| 3 | Cathode | Protected line 2 input; electrically isolated from other cathodes except via shared anode node. |
| 4 | Cathode | Protected line 3 input; enables multi-line protection without discrete diodes per line. |
| 5 | Cathode | Protected line 4 input; supports differential or single-ended signal pairs in same package. |
| 6 | Cathode | Protected line 5 input; completes full 5-line protection set in single TSOP-6 footprint. |
Key Features
| Feature | Design Value |
|---|---|
| 5-line protection in TSOP-6 | Reduces board area vs. five discrete diodes; eliminates routing complexity for multi-signal interfaces. |
| 350 W peak power dissipation | Handles high-energy 8 × 20 µs transients without thermal failure, supporting robust front-end protection. |
| AEC-Q101 qualified | Validated for automotive applications including infotainment, body control, and ADAS sensor interfaces. |
| UL 94 V-0 flammability rating | Meets safety standards for enclosure-integrated electronics where flame propagation must be suppressed. |
| Pb-free and RoHS compliant | Enables global manufacturing compliance without lead-based soldering constraints or rework penalties. |
Applications
| Automotive Sensor Interfaces | Industrial Serial Ports |
|---|---|
|
Use Scenario: Protecting LIN bus or CAN FD transceiver I/O pins in vehicle door modules and seat controllers exposed to load-dump and ESD. IC Role / Device Role / Timing Role: Transient voltage suppressor placed between connector and transceiver, clamping fast ESD pulses before they reach sensitive analog inputs. Use Value: Prevents field failures due to ±8 kV contact ESD per IEC 61000-4-2 while maintaining <75 pF loading on 20 kbps LIN signals. |
Use Scenario: Shielding RS-485/RS-422 differential data lines in programmable logic controllers and motor drives from factory-floor ESD and inductive switching noise. IC Role / Device Role / Timing Role: Bidirectional clamping device on each line pair, referenced to local ground, with matched cathode paths preserving signal integrity. Use Value: Enables reliable 10 Mbps operation with <75 pF capacitance and 40 V clamping at 5 A, avoiding data corruption during surge events. |
| Notebook I/O Expansion | Networking Equipment Front Panel |
|
Use Scenario: Safeguarding USB 2.0 D+/D−, HDMI CEC, and SMBus lines on ultrabook daughterboards connected to docking stations. IC Role / Device Role / Timing Role: Low-capacitance ESD array placed at board edge connectors, shunting transients before reaching USB PHY or display controller. Use Value: Maintains signal fidelity with 60–75 pF line-to-GND capacitance and meets USB-IF ESD requirements without degrading eye diagram margin. |
Use Scenario: Protecting Ethernet LED status indicators, reset buttons, and management port UART lines on 1U rack-mounted switches and routers. IC Role / Device Role / Timing Role: Multi-line TVS array mounted adjacent to front-panel connectors, providing coordinated clamping across mixed-signal control lines. Use Value: Reduces BOM count by consolidating five protection paths into one TSOP-6 device, lowering assembly cost and improving test coverage. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar ESD protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| SZSMS24CT1G | Identical electrical specs and package; includes SZ prefix denoting AEC-Q101 qualification with PPAP capability and unique site/control change tracking. | Required for Tier 1 automotive production programs demanding full PPAP documentation and traceability. | Select SZSMS24CT1G when automotive OEM sourcing mandates PPAP compliance and change control rigor beyond standard AEC-Q101. |
| SMS15CT1G | Lower VRWM (15 V), lower clamping (24 V @ 5 A), higher capacitance (95–125 pF), and higher IPP (12 A) - optimized for 12–15 V systems. | Better suited for 12 V automotive body electronics or industrial 15 V logic buses where lower clamping voltage is critical. | Choose SMS15CT1G when protecting 12–15 V rails where tighter clamping and higher surge current tolerance outweigh 24 V compatibility needs. |
Compared with SMS15CT1G and SZSMS24CT1G, the SMS24CT1G provides optimal balance of 24 V system compatibility, 40 V clamping headroom, and 75 pF capacitance for mixed-voltage industrial and automotive I/O - without requiring PPAP overhead or sacrificing surge margin.
Availability
SMS24CT1G is available at Aetrix Electronics and suitable for automotive sensor interfaces, industrial serial ports, and notebook I/O expansion requiring stable component supply and long-term lifecycle support.
Supply support for SMS24CT1G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and consumer markets.
The SMS24CT1G belongs to onsemi's ESD Protection Diode Array family, engineered specifically for high-reliability transient suppression in space-constrained, high-surge environments like automotive ECUs and industrial communication nodes.
FAQ
What is the maximum operating junction temperature for SMS24CT1G?
The SMS24CT1G has an operating junction temperature range of −40 °C to +150 °C, verified per its datasheet maximum ratings table. This wide range supports deployment in under-hood automotive locations and industrial enclosures without derating. The SMS24CT1G maintains specified clamping performance across this full range, with pulse derating curves provided in Figure 1 of the official datasheet.
Does SMS24CT1G support IEC 61000-4-2 Level 4 ESD immunity?
Yes, the SMS24CT1G is certified to IEC 61000-4-2 Level 4: ±15 kV air discharge and ±8 kV contact discharge. This is explicitly stated in the Features section and confirmed in the ESD Ratings table. The SMS24CT1G achieves this using monolithic silicon construction and optimized junction geometry, making it suitable for end-equipment compliance testing without additional external components.
How does the common-anode configuration of SMS24CT1G affect circuit layout?
The SMS24CT1G uses a common-anode (Pin 2) architecture, meaning all five cathodes (Pins 1, 3, 4, 5, 6) share one anode connection - typically tied to GND or a protected reference rail. This simplifies PCB routing by eliminating five separate return paths and reduces loop inductance. The SMS24CT1G layout requires only one low-inductance anode trace, enhancing high-frequency surge response compared to discrete diode implementations.
Is SMS24CT1G pin-compatible with SMS15CT1G or SMS05CT1G?
No, SMS24CT1G is not pin-compatible with SMS15CT1G or SMS05CT1G in terms of electrical behavior, though all share the same TSOP-6 physical package and pinout. Their VRWM, clamping voltages, and capacitance differ significantly - SMS24CT1G is designed for 24 V systems, while SMS15CT1G targets 15 V and SMS05CT1G targets 5 V. Interchanging them risks over-clamping or insufficient protection. Always match VRWM to the protected line's operating voltage.
What is the typical junction capacitance of SMS24CT1G at 0 V bias?
The SMS24CT1G exhibits a junction capacitance of 60–75 pF per line (cathode-to-anode) at 0 V reverse bias and 1 MHz, as specified in the SZ/SMS24C Electrical Characteristics table. This low capacitance ensures minimal signal degradation on high-speed interfaces like USB 2.0 or RS-485, and is measured line-to-GND when the anode is grounded - a value confirmed across production lots and validated in Figure 4 of the datasheet.
SMS24CT1G Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Package/Case:
- SOT-23-6 Thin, TSOT-23-6
- Series:
- -
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 5
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 24V (Max)
- Voltage - Breakdown (Min):
- 26.7V
- Voltage - Clamping (Max) @ Ipp:
- 44V
- Current - Peak Pulse (10/1000µs):
- 8A (8/20µs)
- Power - Peak Pulse:
- 350W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- 60pF @ 1MHz
- Operating Temperature:
- -40°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-TSOP
SMS24CT1G FAQ
1.How can I place an order for SMS24CT1G through Aetrix?
Please submit a Request for Quotation (RFQ) for SMS24CT1G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SMS24CT1G reliable?
The price and inventory of SMS24CT1G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SMS24CT1G is usually 5 days.
3.What payment methods are accepted for SMS24CT1G?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SMS24CT1G transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SMS24CT1G?
SMS24CT1G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SMS24CT1G order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SMS24CT1G?
For technical support, including SMS24CT1G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SMS24CT1G requirements.
6.How does Aetrix verify that SMS24CT1G is sourced from the original manufacturer or authorized distributors?
All SMS24CT1G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SMS24CT1G meets industry standards.
7.What is the process for return or replacement of SMS24CT1G?
All SMS24CT1G units undergo pre-shipment inspection (PSI). If there is an issue with SMS24CT1G, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SMS24CT1G part is unused and in its original packaging.
Return procedure for SMS24CT1G:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SMS24CT1G Tags
-
ESD9B5.0ST5G
onsemi
-
DESD3V3E1BL-7B
Diodes Incorporated
-
ESD5Z3.3T1G
onsemi
-
D5V0H1B2LP-7B
Diodes Incorporated
-
D5V0P1B2LP-7B
Diodes Incorporated
-
DESD5V0U1BA-7
Diodes Incorporated
-
ESD5Z5.0T1G
onsemi
-
DESD5V0U1BB-7
Diodes Incorporated
-
D12V0L1B2LP-7B
Diodes Incorporated
-
PESD2V0Y1BSFYL
Nexperia USA Inc.
-
DF2S5M4CT,L3F
Toshiba Semiconductor and Storage
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D5V0L1B2WS-7
Diodes Incorporated
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