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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPA11N65C3XKSA1

Name: SPA11N65C3XKSA1
Brand: Infineon Technologies
SKU: SPA11N65C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPA11N65C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SPA11N65C3XKSA1.pdf

Description:: MOSFET N-CH 650V 11A TO220-FP

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Product details

Overview

SPA11N65C3XKSA1 from Infineon Technologies is a 650 V, 11 A CoolMOS™ C3 superjunction N-channel power MOSFET in PG-TO220FP package, featuring R_DS(on) = 0.38 Ω (T_j = 25°C), ultra-low gate charge (Q_g = 45–60 nC), and periodic avalanche rating. It delivers high peak current capability (I_D,puls = 33 A) and extreme dv/dt robustness (50 V/ns) for hard-switched SMPS in industrial AC-DC adapters and server power supplies.

For engineers reviewing the SPA11N65C3XKSA1 datasheet, SPA11N65C3XKSA1 pinout, SPA11N65C3XKSA1 application, or SPA11N65C3XKSA1 equivalent, key selection criteria include its 650 V V_DS, 0.38 Ω R_DS(on), 45–60 nC total gate charge, 340 mJ single-pulse avalanche energy, and thermal resistance R_thJC = 3.8 K/W - all critical for high-efficiency, high-reliability flyback and LLC resonant converters.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, optimized for low conduction and switching losses in continuous conduction mode (CCM) and transition-mode (TM) PFC and DC-DC stages. Its transconductance g_fs = 8.3 S and low Crss (30 pF) enable stable high-frequency operation up to 300 kHz with minimal EMI generation.

The MOSFET integrates a fast, soft-recovery body diode (t_rr = 400–600 ns, Q_rr = 6 µC) and supports repetitive avalanche (I_AR = 4 A, E_AR = 0.6 mJ) without derating, making it suitable for unclamped inductive switching in auxiliary supplies and hold-up circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full mains rectified voltage (e.g., 400 V DC bus + 50% margin) in universal-input offline SMPS.
R_DS(on)	0.38 Ω @ T_j = 25°C - Enables <1.5 W conduction loss at 7 A continuous drain current in TO220FP package.
Q_g	45–60 nC - Reduces gate drive power and allows use of low-cost, low-current drivers (e.g., 1 A peak).
E_AS	340 mJ - Supports reliable operation under single-pulse inductive fault conditions without external snubbers.
dv/dt Rating	50 V/ns - Ensures immunity to false turn-on during high-slew-rate switching in high-noise environments.
t_r/t_f	5 ns / 5–9 ns - Enables clean, low-overshoot switching transitions at >200 kHz with minimal dead-time dependency.
R_thJC	3.8 K/W - Allows 125 W power dissipation at T_C = 25°C in FullPAK (TO220FP) configuration with standard heatsinking.

Pinout & Package

Package: PG-TO220FP (FullPAK), surface-mount variant of TO-220 with isolated drain tab and integrated thermal pad. Designed for direct PCB mounting with enhanced thermal performance over standard TO-220.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to exposed copper pad; requires solder mask opening and thermal via array for optimal heat transfer to PCB ground plane.
Source	Reference node for gate control and current return	Internally bonded to source metallization; serves as common reference for gate driver IC and current sense resistor placement.
Gate	Control electrode for channel modulation	High-impedance input requiring low-inductance routing (<10 mm) and local 10 nF decoupling to suppress ringing.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 45–60 nC enables <0.5 W gate drive loss at 300 kHz with 12 V drive - reduces driver size and cost.
Periodic avalanche rated	E_AR = 0.6 mJ, I_AR = 4 A allows safe operation in unclamped inductive loads without additional protection circuitry.
Extreme dv/dt immunity	50 V/ns rating eliminates need for gate resistors >10 Ω in noisy high-side configurations - improves efficiency.
Soft-recovery body diode	t_rr = 400–600 ns, Q_rr = 6 µC minimizes reverse recovery spikes and EMI in synchronous rectification and freewheeling paths.
Thermal robustness	R_thJC = 3.8 K/W and T_j max = +150°C support sustained operation in enclosed, convection-cooled industrial enclosures.

Applications

Industrial AC-DC Adapters

Server PSU Primary Switch

Use Scenario: 500–1000 W universal-input offline flyback or LLC resonant converter operating at 65–300 kHz.

IC Role / Device Role: Main high-voltage switching transistor handling primary-side energy transfer and voltage regulation.

Use Value: 0.38 Ω R_DS(on) and 45–60 nC Q_g reduce combined conduction/switching losses by ≥12% vs. legacy 600 V MOSFETs, improving efficiency to >92% at full load.

Use Scenario: High-density 1U/2U server power supply with active clamp forward or phase-shifted full-bridge topology.

IC Role / Device Role: Primary-side switching element managing 400 V DC bus conversion at 100–250 kHz with tight thermal constraints.

Use Value: 3.8 K/W R_thJC and 125 W P_tot allow operation at T_C = 85°C without forced air - enabling fanless or low-RPM cooling designs.

PFC Boost Stage

Hold-Up Capacitor Charger

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in telecom rectifiers and medical PSUs.

IC Role / Device Role: Fast-switching, high-voltage switch controlling inductor current and shaping input current waveform.

Use Value: Low Crss (30 pF) and high g_fs (8.3 S) ensure stable zero-crossing behavior and low THD across line/load variations.

Use Scenario: Auxiliary charging circuit maintaining backup power during AC dropout in UPS and industrial PLCs.

IC Role / Device Role: Controlled high-side switch regulating charge current into large electrolytic hold-up capacitors.

Use Value: Periodic avalanche rating (E_AR = 0.6 mJ) tolerates repeated inductive kickback from choke discharge without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M2	R_DS(on) = 0.42 Ω, Q_g = 48 nC, no specified dv/dt rating, R_thJC = 1.0 K/W (TO-220)	Higher conduction loss and lacks dv/dt immunity - requires larger gate resistor and snubber network.	Prefer when lowest BOM cost is priority and layout allows conservative gate drive design.
IPP65R041C7	R_DS(on) = 0.041 Ω, Q_g = 72 nC, 650 V, TO-220 package, higher capacitance (C_iss = 2200 pF)	Lower R_DS(on) but higher switching loss and EMI risk due to elevated C_iss and Crss.	Prefer only in low-frequency (<100 kHz), high-current applications where conduction loss dominates.

Compared with STP12N65M2 and IPP65R041C7, SPA11N65C3XKSA1 offers the best balance of low R_DS(on), ultra-low Q_g, and proven dv/dt robustness - delivering superior efficiency and reliability in high-frequency, thermally constrained industrial SMPS designs.

Availability

SPA11N65C3XKSA1 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server power supplies, and PFC boost stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SPA11N65C3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This part belongs to the CoolMOS™ C3 product line, engineered specifically for high-efficiency, high-power-density switched-mode power supplies in industrial, server, and telecom applications - emphasizing low gate charge, avalanche ruggedness, and thermal performance.

FAQ

What is the maximum continuous drain current for SPA11N65C3XKSA1 at 100°C case temperature?

The maximum continuous drain current is 7 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case thermal resistance (R_thJC = 3.8 K/W) and ensures T_j remains ≤150°C under steady-state conduction.

Does SPA11N65C3XKSA1 require a gate resistor, and if so, what value is recommended?

Yes - a gate resistor is required to control switching speed and suppress oscillation. For typical 300 kHz operation with 12 V drive, a 6.8 Ω resistor is validated in the datasheet (used in td(on)/td(off) test conditions), balancing EMI, dv/dt stress, and switching loss.

Can SPA11N65C3XKSA1 be used in synchronous rectification topologies?

No - it is not designed for synchronous rectification. Its body diode has soft recovery (t_rr = 400–600 ns), but the device lacks the optimized diode characteristics (e.g., low Q_rr, controlled V_SD) and bidirectional conduction capability required for SR FETs.

Is the drain tab of SPA11N65C3XKSA1 electrically isolated from the PCB mounting plane?

No - the drain (tab) is electrically connected to the internal drain structure and must be treated as a live high-voltage node. The PG-TO220FP package provides mechanical isolation only; electrical isolation requires insulating thermal pads or dielectric coatings on the PCB.

SPA11N65C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

SPA11N65C3XKSA1 FAQ

1.How can I place an order for SPA11N65C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPA11N65C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPA11N65C3XKSA1 reliable?

The price and inventory of SPA11N65C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPA11N65C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPA11N65C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPA11N65C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPA11N65C3XKSA1?

SPA11N65C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPA11N65C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPA11N65C3XKSA1?

For technical support, including SPA11N65C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPA11N65C3XKSA1 requirements.

6.How does Aetrix verify that SPA11N65C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPA11N65C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPA11N65C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPA11N65C3XKSA1?

All SPA11N65C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPA11N65C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPA11N65C3XKSA1 part is unused and in its original packaging.

Return procedure for SPA11N65C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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