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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPA11N80C3XKSA2

Name: SPA11N80C3XKSA2
Brand: Infineon Technologies
SKU: SPA11N80C3XKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPA11N80C3XKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Isolated Tab

Datasheet:: SPA11N80C3XKSA2.pdf

Description:: MOSFET N-CH 800V 11A TO220-3

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Product details

Overview

SPA11N80C3 from Infineon Technologies is an 800 V, 11 A CoolMOS™ C3 superjunction power MOSFET in PG-TO220-3 package, featuring 0.45 Ω R_DS(on) at 25 °C, 64 nC total gate charge, and 2500 V_AC isolation rating. It serves as a high-voltage switching device in industrial DC/DC converters and active-clamp forward topologies operating with ≥400 V bulk rails.

For engineers reviewing the SPA11N80C3 datasheet, SPA11N80C3 pinout, SPA11N80C3 application, or SPA11N80C3 equivalent, key selection criteria include its 800 V V_(BR)DSS, extreme dv/dt ruggedness (≥4 V/ns), 470 mJ single-pulse avalanche energy, and JEDEC-qualified reliability for high-stress industrial power conversion.

Technical Context

This 800 V superjunction MOSFET employs Infineon's CoolMOS™ C3 technology to achieve ultra-low gate charge (64 nC typ.) and reduced output capacitance (C_oss = 65 pF), enabling high-frequency hard-switching operation up to 100 kHz in isolated flyback and forward converters. Its 3.7 K/W junction-to-case thermal resistance supports 34 W continuous dissipation at T_C = 25 °C.

The integrated body diode exhibits 1.2 V forward voltage at 11 A and 550 ns reverse recovery time, with controlled di/dt robustness (400 A/µs) and 33 A peak reverse recovery current-critical for snubberless active-clamp designs where diode commutation stress is high.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	800 V - Withstands 800 V drain-source blocking voltage before avalanche, enabling use in 400–640 V DC bus applications.
R_DS(on) max @ 25 °C	0.45 Ω - Delivers low conduction loss at 7.1 A continuous current; rises to 1.05 Ω at 150 °C for thermal design margining.
Q_g typ	64 nC - Enables efficient gate drive with standard 1–2 A peak drivers; reduces switching loss in high-frequency SMPS.
E_AS	470 mJ - Supports single-pulse avalanche capability under 2.2 A, 50 V conditions, enhancing fault tolerance in unclamped inductive switching.
C_oss	65 pF - Low output capacitance minimizes turn-off energy loss and improves zero-voltage switching (ZVS) feasibility.
dv/dt ruggedness	≥4 V/ns - Sustains rapid voltage transients without spurious turn-on, critical for high-dV/dt environments like motor drives and PFC stages.
Isolation rating	2500 V_AC/1 min - Fully isolated TO-220 package eliminates need for additional creepage/clearance insulation in safety-critical AC-DC systems.

Pinout & Package

Package: PG-TO220-3 (standard through-hole, isolated tab, M2.5 mounting torque 50 Ncm).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	High-side power switch node	Electrically isolated metal tab connects directly to drain; requires insulating washer when mounted to heatsink.
Source	Power return / reference node	Low-impedance source connection enables stable gate drive referencing and current sensing via shunt resistor.
Gate	Control input	High-impedance MOSFET gate requiring <30 V absolute max; 10 V threshold ensures reliable turn-on with standard logic-level drivers.

Key Features

Feature	Design Value
Ultra-low Q_g (64 nC)	Reduces gate drive power and enables faster switching transitions, lowering total switching losses in 65–100 kHz converters.
JEDEC-qualified reliability	Validated per J-STD-20/JESD22 for industrial temperature cycling and humidity exposure, supporting 15+ year field life in harsh environments.
Extreme dv/dt rating (≥4 V/ns)	Prevents false triggering during fast voltage transients in high-side configurations, eliminating need for external gate clamping networks.
Integrated avalanche-rated body diode	Supports bidirectional current flow with 550 ns t_rr and 10 µC Q_rr, enabling robust operation in synchronous rectification and active-clamp circuits.
RoHS-compliant Pb-free plating	Meets EU RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 2a, ensuring compatibility with lead-free reflow and wave soldering processes.

Applications

Industrial DC/DC Converters

Active-Clamp Forward Converters

Use Scenario: Isolated 48 V to 12 V/24 V DC/DC modules powering PLC I/O, HMI displays, and sensor interfaces in factory automation.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 400–640 V DC input, operating at 65–100 kHz with ZVS-assisted turn-on.

Use Value: 0.45 Ω R_DS(on) and 64 nC Q_g deliver >92% efficiency at full load while maintaining thermal rise <45 K on 50 cm² heatsink.

Use Scenario: Telecom and server PSU front-end converters using active-clamp topology to recycle leakage energy and reduce voltage stress.

IC Role / Device Role / Timing Role: Main switch clamped by auxiliary transistor; subjected to 800 V peak V_DS and 400 A/µs di/dt during resonant reset.

Use Value: 4 V/ns dv/dt ruggedness and 470 mJ E_AS prevent failure during clamp capacitor discharge transients.

High-Voltage PFC Stages

Motor Drive Inverters (Auxiliary)

Use Scenario: Two-stage 3 kW industrial PFC with boost stage operating at 400 V DC link and 30 kHz switching frequency.

IC Role / Device Role / Timing Role: Boost switch managing 11 A RMS current and 800 V blocking requirement under line surges and hold-up conditions.

Use Value: 11 A I_D rating at 100 °C case temperature ensures derating margin for continuous 24/7 operation in enclosed cabinets.

Use Scenario: Auxiliary power supply in 3-phase inverter drives generating isolated 15 V/24 V rails for gate drivers and control logic.

IC Role / Device Role / Timing Role: High-side switch in flyback controller IC feedback loop, requiring reinforced isolation and low EMI generation.

Use Value: 2500 V_AC isolation rating eliminates need for external optocouplers or transformers in secondary-side sensing paths.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N80K5	R_DS(on) = 0.52 Ω, Q_g = 72 nC, no isolation rating	Requires external isolation hardware; higher conduction loss increases thermal load in compact enclosures.	Preferred where cost sensitivity outweighs isolation and efficiency requirements.
IPP60R190C7	V_(BR)DSS = 600 V, R_DS(on) = 0.19 Ω, C_oss = 105 pF	Limited to ≤400 V DC bus; higher C_oss raises turn-off loss in hard-switched topologies above 65 kHz.	Suitable only for lower-voltage, higher-current applications where 800 V rating is unnecessary.

Compared with STP12N80K5 and IPP60R190C7, SPA11N80C3 uniquely combines 800 V rating, 2500 V_AC isolation, and sub-65 nC gate charge-making it the only option qualified for space-constrained, high-reliability industrial DC/DC and active-clamp designs demanding both voltage headroom and thermal efficiency.

Availability

SPA11N80C3 is available at Aetrix Electronics and suitable for industrial DC/DC converters, active-clamp forward power supplies, and high-voltage PFC stages requiring stable component supply, long-term lifecycle support, and certified RoHS compliance.

Supply support for SPA11N80C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO 9001 and IATF 16949.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability industrial and telecom power supplies, emphasizing reduced gate charge, enhanced avalanche robustness, and extended temperature operation beyond 150 °C junction.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPA11N80C3 supports 7.1 A continuous drain current at T_C = 100 °C, as specified in its maximum ratings table. This value reflects thermal derating due to increased R_DS(on) at elevated temperatures and assumes proper heatsinking with ≤3.7 K/W junction-to-case thermal resistance.

Does the device require a negative gate voltage for reliable turn-off?

No. The SPA11N80C3 has a gate threshold voltage range of 2.1–3.9 V and operates reliably with 0 V gate-source voltage for turn-off. A negative gate bias is not required, though −5 V may be used to improve noise immunity in high-dv/dt environments.

Can this MOSFET replace older CoolMOS™ C2 devices in existing designs?

Yes-SPA11N80C3 is a direct drop-in replacement for SPA11N80C2 with identical pinout, package, and voltage rating. It offers improved gate charge (64 nC vs. 75 nC) and lower R_DS(on) (0.45 Ω vs. 0.48 Ω), enabling measurable efficiency gains without layout changes.

What is the significance of the "C3" suffix in the part number?

The "C3" denotes Infineon's third-generation CoolMOS™ superjunction technology, characterized by optimized cell pitch, reduced specific on-resistance, and enhanced dv/dt ruggedness over C1/C2 generations-specifically validated for industrial switching applications with stringent reliability requirements.

SPA11N80C3XKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Isolated Tab

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 450mOhm @ 7.1A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 680µA

Gate Charge (Qg) (Max) @ Vgs:: 85 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1600 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

SPA11N80C3XKSA2 FAQ

1.How can I place an order for SPA11N80C3XKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPA11N80C3XKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPA11N80C3XKSA2 reliable?

The price and inventory of SPA11N80C3XKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPA11N80C3XKSA2 is usually 5 days.

3.What payment methods are accepted for SPA11N80C3XKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPA11N80C3XKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPA11N80C3XKSA2?

SPA11N80C3XKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPA11N80C3XKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPA11N80C3XKSA2?

For technical support, including SPA11N80C3XKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPA11N80C3XKSA2 requirements.

6.How does Aetrix verify that SPA11N80C3XKSA2 is sourced from the original manufacturer or authorized distributors?

All SPA11N80C3XKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPA11N80C3XKSA2 meets industry standards.

7.What is the process for return or replacement of SPA11N80C3XKSA2?

All SPA11N80C3XKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with SPA11N80C3XKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPA11N80C3XKSA2 part is unused and in its original packaging.

Return procedure for SPA11N80C3XKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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