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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPA15N60C3XKSA1

Name: SPA15N60C3XKSA1
Brand: Infineon Technologies
SKU: SPA15N60C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPA15N60C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: SPA15N60C3XKSA1.pdf

Description:: MOSFET N-CH 650V 15A TO220-FP

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Product details

Overview

SPA15N60C3 from Infineon Technologies is a 600 V, 15 A N-channel CoolMOS™ C3 superjunction power MOSFET in PG-TO220FP package, featuring R_DS(on) = 0.28 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 63 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial AC-DC converters operating up to 150°C junction temperature.

For engineers reviewing the SPA15N60C3 datasheet, SPA15N60C3 pinout, SPA15N60C3 application, or SPA15N60C3 equivalent, key selection criteria include its 50 V/ns dv/dt capability, 460 mJ single-pulse avalanche energy, 0.8 K/W junction-to-case thermal resistance, and full isolation rating (2500 VAC, 1 min) - critical for high-reliability 600 V hard-switched topologies.

Technical Context

This MOSFET employs Infineon's third-generation CoolMOS™ C3 technology, optimized for reduced conduction and switching losses via ultra-low Q_gd/Q_gs ratio (29 nC / 7 nC) and minimized effective output capacitance (C_o(er) = 80 pF). Its transconductance (g_fs = 11.9 S) and gate plateau voltage (5 V) support stable PWM control under wide V_GS margin.

The device integrates a robust body diode with t_rr = 460 ns, Q_rr = 27 µC, and I_rrm = 55 A, enabling reliable operation in discontinuous conduction mode (DCM) flyback and LLC resonant converters without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC-link designs with 50% safety margin for surge and ringing
R_DS(on)	0.28 Ω @ T_j = 25°C - enables ≤2.5 W conduction loss at 9.4 A continuous drain current
Q_g	63 nC - reduces gate drive power and allows use of low-power drivers like 1EDN7512B
E_AS	460 mJ - withstands single-pulse inductive turn-off stress in 50 V clamp circuits
dv/dt rating	50 V/ns @ T_j = 125°C - suppresses false triggering in high-noise bridge-leg environments
R_thJC	0.8 K/W - permits 156 W dissipation at T_C = 25°C with minimal heatsink requirement
t_r/t_f	5 ns / 5–10 ns - enables >500 kHz switching in ZVS/ZCS topologies with low EMI

Pinout & Package

SPA15N60C3 uses the PG-TO220FP (FullPAK) package: isolated plastic case, 3-pin vertical mount, 2500 VAC isolation between drain and mounting base for 1 minute. Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; input capacitance C_iss = 1660 pF shapes gate loop design
Pin 2 (Drain)	High-voltage power terminal	Internally connected to metal tab; requires insulated mounting for isolation compliance
Pin 3 (Source)	Reference node	Serves as return path for gate drive and load current; defines local ground for driver IC placement

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 63 nC - cuts gate drive loss by >40% vs. standard 600 V MOSFETs
Periodic avalanche rated	E_AR = 0.8 mJ - supports repetitive inductive switching without derating in PFC boost stages
Extreme dv/dt immunity	50 V/ns at 125°C - eliminates need for gate resistors >10 Ω in half-bridge configurations
Low effective output capacitance	C_o(er) = 80 pF - reduces turn-off loss and improves ZVS initiation in resonant converters
Isolated package	2500 VAC, 1 min isolation - removes need for insulating pads in heatsink-mounted designs

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100–300 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in active clamp forward or LLC resonant topology.

Use Value: 0.28 Ω R_DS(on) and 63 nC Q_g reduce total switching + conduction loss to <1.8 W at 12 A, enabling >95% efficiency at 50% load.

Use Scenario: 3.3 kW industrial motor drive front-end with boost PFC stage operating at 65 kHz.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 15 A RMS current with 400 V DC-link.

Use Value: 460 mJ E_AS and 50 V/ns dv/dt rating prevent failure during line surges and inductor saturation events.

EV Charger Onboard DC-DC

Medical Imaging Power Supply

Use Scenario: Bidirectional DC-DC converter in 11 kW EV onboard charger, switching at 120 kHz with SiC gate driver.

IC Role / Device Role / Timing Role: Low-loss synchronous rectifier switch in secondary-side isolation stage.

Use Value: Body diode t_rr = 460 ns and Q_rr = 27 µC minimize reverse recovery loss and EMI during zero-current switching transitions.

Use Scenario: Compact 1.5 kW X-ray generator power supply requiring medical-grade isolation and zero failure rate.

IC Role / Device Role / Timing Role: Isolated primary switch in flyback-derived topology with reinforced insulation barrier.

Use Value: PG-TO220FP's 2500 VAC isolation meets IEC 60601-1 creepage/clearance requirements without additional insulation layers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N60DM6	R_DS(on) = 0.32 Ω, Q_g = 52 nC, no avalanche rating	Lacks periodic avalanche rating; unsuitable for unclamped inductive loads	Prefer when gate drive power is constrained but avalanche stress is absent
IPP60R190C7	R_DS(on) = 0.19 Ω, Q_g = 54 nC, 650 V rating, TO-220FP	Lower R_DS(on) but higher cost; same isolation and footprint	Choose for higher efficiency at >10 A continuous, accepting premium pricing

Compared with STP15N60DM6 and IPP60R190C7, SPA15N60C3 uniquely balances 600 V ruggedness, 460 mJ avalanche capability, and 0.28 Ω conduction loss in a certified isolated package - making it optimal for cost-sensitive, reliability-critical 600 V SMPS where transient overvoltage and thermal cycling are dominant failure modes.

Availability

SPA15N60C3 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, EV onboard chargers, and medical imaging power supplies requiring stable component supply across multi-year production cycles.

Supply support for SPA15N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power, sensor, and automotive ICs, with >50 years of high-reliability component development and ISO/TS 16949-certified manufacturing.

This device belongs to the CoolMOS™ C3 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in enterprise, industrial, and medical equipment.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPA15N60C3 supports 9.4 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case resistance (0.8 K/W) and ensures safe operation within the 150°C maximum junction temperature limit under sustained load conditions.

Does the PG-TO220FP package require an insulating pad when mounted to a heatsink?

No - the PG-TO220FP package provides 2500 VAC isolation between the drain (metal tab) and the mounting surface for 1 minute, per IEC 60747-17. No insulating pad is required unless system-level safety standards demand additional creepage distance beyond the package's certified isolation.

Can SPA15N60C3 replace SPP15N60C3 in existing designs?

Yes - both share identical electrical specifications, thermal characteristics, and pinout. The SPA variant uses the FullPAK (PG-TO220FP) package with isolated tab, while SPP uses standard PG-TO220. Replacement is direct if mechanical mounting and isolation requirements align; verify heatsink interface and creepage in layout.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The body diode exhibits Q_rr = 27 µC under test conditions of V_R = 480 V, I_F = 15 A, and di_F/dt = 100 A/µs at T_j = 25°C. This low Q_rr minimizes commutation loss and EMI in DCM flyback and quasi-resonant topologies.

SPA15N60C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 675µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1660 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 34W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-31

SPA15N60C3XKSA1 FAQ

1.How can I place an order for SPA15N60C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPA15N60C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPA15N60C3XKSA1 reliable?

The price and inventory of SPA15N60C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPA15N60C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPA15N60C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPA15N60C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPA15N60C3XKSA1?

SPA15N60C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPA15N60C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPA15N60C3XKSA1?

For technical support, including SPA15N60C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPA15N60C3XKSA1 requirements.

6.How does Aetrix verify that SPA15N60C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPA15N60C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPA15N60C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPA15N60C3XKSA1?

All SPA15N60C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPA15N60C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPA15N60C3XKSA1 part is unused and in its original packaging.

Return procedure for SPA15N60C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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