Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies SPB03N60C3ATMA1

Part No.:
SPB03N60C3ATMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Datasheet:
AetrixSPB03N60C3ATMA1.pdf
Description:
MOSFET N-CH 650V 3.2A TO263-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,891

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SPB03N60C3ATMA1 from Infineon Technologies is a 600 V, 3.3 A N-channel CoolMOS™ C3 power MOSFET in TO-220FP package, featuring RDS(on) = 1.4 Ω (typ @ Tj = 25°C), ultra-low gate charge (Qg = 12 nC), and 100% avalanche-rated operation; used as a high-voltage switching device in offline SMPS primary-side switches and PFC circuits.

For engineers reviewing the SPB03N60C3ATMA1 datasheet, SPB03N60C3ATMA1 pinout, SPB03N60C3ATMA1 application, or SPB03N60C3ATMA1 equivalent, key selection criteria include its 600 V VDSS, 1.4 Ω RDS(on), 12 nC total gate charge, 100% unclamped inductive switching capability, and thermal resistance RthJC = 2.5 K/W - all critical for high-efficiency, compact AC/DC adapter and industrial power supply designs.

Technical Context

This MOSFET employs Infineon's 3rd-generation CoolMOS™ superjunction technology, enabling high voltage blocking with reduced specific on-resistance and optimized charge profile. Its gate threshold voltage (VGS(th) = 2.5–4.5 V) supports standard 10 V gate drive, while the low Qgd/Qgs ratio improves hard-switching robustness.

The device is fully characterized for repetitive avalanche energy (EAR = 79 mJ @ VDD = 400 V) and features fast body diode recovery (trr = 180 ns, Qrr = 0.52 µC), making it suitable for continuous conduction mode (CCM) PFC and resonant LLC topologies where diode commutation stress is critical.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports universal input (85–265 VAC) offline converters with sufficient margin against line surges and ringing.
RDS(on) max1.7 Ω @ Tj = 100°C - enables low conduction loss in 30–60 W SMPS primary switches at full load.
Qg12 nC @ VGS = 0–10 V - reduces gate driver power loss and allows use of low-cost, low-current drivers in cost-sensitive adapters.
EAS520 mJ - rated for single-pulse unclamped inductive switching, supporting reliable operation without external snubbers in flyback designs.
tr/tf12/22 ns @ ID = 1.5 A - enables high-frequency switching (>100 kHz) with minimal overlap loss in quasi-resonant controllers.
RthJC2.5 K/W - allows 3.3 A continuous current with ≤50 K temperature rise over case when mounted on ≥10 cm² copper area.

Pinout & Package

SPB03N60C3ATMA1 is housed in a TO-220FP (Full-Pak) package with insulated flange, offering creepage/clearance compliance for reinforced insulation in Class II systems. The drain is connected to the flange for direct heatsinking; source and gate are on leads.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Flange)High-voltage power output nodeElectrically connected to metal flange; must be isolated from chassis unless system ground reference permits.
SourcePower return and gate referenceServes as common reference for gate drive; requires low-inductance layout to minimize dV/dt coupling during switching.
GateControl terminalHigh-impedance input requiring <12 nC charge for full enhancement; sensitive to ESD and requires series gate resistor (≥10 Ω) for oscillation damping.

Key Features

FeatureDesign Value
Ultra-low gate chargeQg = 12 nC enables efficient 65–130 kHz operation with minimal driver loss in compact adapters.
100% avalanche-ratedGuaranteed single-pulse EAS = 520 mJ ensures reliability under transient overloads without derating.
Optimized body diodetrr = 180 ns and Qrr = 0.52 µC reduce commutation loss and EMI in CCM PFC stages.
Thermally enhanced TO-220FPInsulated flange supports safe mounting on heatsinks without additional isolation pads in double-insulated designs.

Applications

AC/DC Adapter Primary SwitchIndustrial SMPS Main Switch

Use Scenario: 36 W universal-input offline flyback converter for medical auxiliary supplies.

IC Role / Device Role / Timing Role: High-side main switch operating in DCM/QR mode, switching at 65–100 kHz with peak drain voltage up to 520 V.

Use Value: Low RDS(on) and Qg reduce conduction and switching losses, enabling >88% efficiency at full load without active cooling.

Use Scenario: 48 V/5 A industrial open-frame power supply with active PFC front-end.

IC Role / Device Role / Timing Role: PFC boost switch in CCM, driven by UCC28070, operating continuously at 65 kHz.

Use Value: Fast, soft-recovery body diode minimizes reverse recovery spikes and EMI filter size; 600 V rating accommodates 400 V DC bus with surge margin.

LED Driver Primary SwitchUPS Inverter Half-Bridge

Use Scenario: 25 W constant-current LED driver for street lighting with TRIAC dimming compatibility.

IC Role / Device Role / Timing Role: Primary-side switch in quasi-resonant flyback, handling 265 VAC peaks and phase-cut waveforms.

Use Value: Avalanche ruggedness prevents failure during dimmer-induced line transients; low Qgd improves zero-voltage switching consistency.

Use Scenario: 1 kVA online UPS inverter stage using discrete half-bridge configuration.

IC Role / Device Role / Timing Role: Low-side switch in 16 kHz PWM inverter leg, paired with complementary high-side device.

Use Value: 3.3 A continuous rating and 2.5 K/W RthJC support sustained 100% load with passive heatsinking; TO-220FP flange simplifies thermal interface.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP3NK60ZFPRDS(on) = 2.2 Ω (max), Qg = 14 nC, no specified EAS ratingLacks guaranteed avalanche ruggedness; less suitable for unclamped inductive loadsPrefer SPB03N60C3ATMA1 where surge immunity and snubberless operation are required.
IPP60R190C6RDS(on) = 0.19 Ω, Qg = 22 nC, 650 V rating, higher current (6.5 A)Higher conduction efficiency but larger gate drive demand; over-specified for ≤3.3 A applicationsChoose SPB03N60C3ATMA1 for cost-optimized 3–4 A designs where gate drive simplicity and thermal footprint matter.

Compared with STP3NK60ZFP and IPP60R190C6, SPB03N60C3ATMA1 delivers optimal balance of avalanche ruggedness, gate drive efficiency, and thermal performance in sub-4 A, 600 V primary-side switching - avoiding both under-ruggedness and unnecessary gate drive overhead.

Availability

SPB03N60C3ATMA1 is available at Aetrix Electronics and suitable for AC/DC adapters, industrial SMPS, LED drivers, and UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPB03N60C3ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability offline power conversion, emphasizing low gate charge, avalanche robustness, and thermal performance for consumer and industrial SMPS.

FAQ

Is SPB03N60C3ATMA1 suitable for hard-switched PFC applications?

Yes - its 600 V VDSS, 1.4 Ω RDS(on) (typ), and 180 ns body diode trr make it appropriate for continuous conduction mode (CCM) PFC stages up to 100 kHz. The low Qgd/Qgs ratio also improves voltage-dependent switching behavior under high dv/dt conditions typical in boost converters.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies ID = 3.3 A at TC = 100°C. This rating assumes proper PCB copper area (≥10 cm²) and mounting to an adequately sized heatsink. Derating is not required below this temperature, but ambient airflow or thermal interface quality directly impacts achievable current.

Does SPB03N60C3ATMA1 require a negative gate turn-off voltage?

No - its gate threshold voltage (2.5–4.5 V) and positive-only gate drive specification mean it operates reliably with 0 V to +10 V or +12 V gate drive. A negative turn-off voltage is unnecessary and not recommended, as the device lacks negative VGS rating beyond –20 V.

Can SPB03N60C3ATMA1 replace older CoolMOS™ C2 devices in existing designs?

Yes - it is a direct drop-in replacement for SPB03N60C2ATMA1, offering identical pinout, voltage rating, and thermal footprint, plus improved RDS(on) (1.4 Ω vs. 1.6 Ω typ) and lower Qg (12 nC vs. 14 nC). No layout or drive circuit changes are needed for migration.

SPB03N60C3ATMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 135µA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
400 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
38W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO263-3-2

SPB03N60C3ATMA1 FAQ

1.How can I place an order for SPB03N60C3ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPB03N60C3ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPB03N60C3ATMA1 reliable?

The price and inventory of SPB03N60C3ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPB03N60C3ATMA1 is usually 5 days.

3.What payment methods are accepted for SPB03N60C3ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPB03N60C3ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPB03N60C3ATMA1?

SPB03N60C3ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPB03N60C3ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPB03N60C3ATMA1?

For technical support, including SPB03N60C3ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPB03N60C3ATMA1 requirements.

6.How does Aetrix verify that SPB03N60C3ATMA1 is sourced from the original manufacturer or authorized distributors?

All SPB03N60C3ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPB03N60C3ATMA1 meets industry standards.

7.What is the process for return or replacement of SPB03N60C3ATMA1?

All SPB03N60C3ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPB03N60C3ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPB03N60C3ATMA1 part is unused and in its original packaging.

Return procedure for SPB03N60C3ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SPB03N60C3ATMA1 Tags

  • SPB03N60C3ATMA1
  • SPB03N60C3ATMA1 PDF
  • SPB03N60C3ATMA1 Datasheet
  • SPB03N60C3ATMA1 Specifications
  • SPB03N60C3ATMA1 Images
  • Infineon Technologies
  • Infineon Technologies SPB03N60C3ATMA1
  • Buy SPB03N60C3ATMA1
  • SPB03N60C3ATMA1 Price
  • SPB03N60C3ATMA1 Distributor
  • SPB03N60C3ATMA1 Supplier
  • SPB03N60C3ATMA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER