Infineon Technologies SPB80N03S2L05

Overview

SPB80N03S2L05 from Infineon Technologies is a 30 V, 80 A, N-channel TrenchMOS™ power MOSFET in TO-220AB package with R_DS(on) = 4.5 mΩ (max) at V_GS = 10 V, optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.

For engineers reviewing the SPB80N03S2L05 datasheet, SPB80N03S2L05 pinout, SPB80N03S2L05 application, or SPB80N03S2L05 equivalent, key selection criteria include on-resistance at 10 V gate drive, peak pulsed drain current rating, thermal resistance (R_thJC = 1.2 K/W), avalanche energy rating (E_AS = 470 mJ), and TO-220AB leadframe compatibility with standard heatsink mounting.

Technical Context

This MOSFET employs Infineon's TrenchMOS™ S2 technology, delivering low conduction losses and fast switching with t_on = 22 ns and t_off = 42 ns at I_D = 40 A, V_DD = 15 V, and R_G = 4.7 Ω. Its integrated body diode exhibits Q_rr = 120 nC and t_rr = 55 ns, supporting synchronous rectification and hard-switched topologies.

The device is fully characterized for repetitive avalanche operation up to E_AS = 470 mJ at T_j = 25 °C and supports gate drive voltages from 0 V to 20 V, with V_GS(th) = 2.0–4.0 V ensuring robust turn-on under wide supply conditions.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab; standard 3-pin through-hole mounting; tab electrically connected to drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRF3205PBF and STP80NF55-08, SPB80N03S2L05 delivers superior conduction efficiency and avalanche ruggedness in high-current 30 V systems, while maintaining TO-220AB mechanical compatibility and gate-drive simplicity.

Availability

SPB80N03S2L05 is available at Aetrix Electronics and suitable for industrial DC-DC converters, BLDC motor inverters, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for SPB80N03S2L05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

SPB80N03S2L05 belongs to the OptiMOS™ 30V product line, engineered specifically for high-current, high-efficiency switching in 24 V and 48 V industrial and transportation power systems.

FAQ

Is SPB80N03S2L05 suitable for synchronous rectification in a 30 V output buck converter?

Yes. With R_DS(on) = 4.5 mΩ and Q_rr = 120 nC, it minimizes conduction and reverse recovery losses in secondary-side switching. Its fast t_rr = 55 ns and low Q_g enable clean gate control synchronized to primary-side PWM, reducing cross-conduction risk.

What is the maximum safe operating temperature for continuous 80 A drain current?

Continuous 80 A is rated at T_C = 25 °C. At T_C = 100 °C, derated I_D drops to 48 A per the SOA curve. For sustained 80 A operation, heatsink design must maintain case temperature ≤45 °C using R_thJC = 1.2 K/W and typical R_thCS + R_thSA ≤ 0.8 K/W.

Does SPB80N03S2L05 require a gate resistor for EMI suppression in 200 kHz switching?

A 10 Ω gate resistor is recommended to dampen ringing and limit peak gate current to <1 A during 95 nC charge/discharge. This value balances switching speed (t_on/t_off ≈ 30/55 ns) and EMI reduction without excessive delay or driver stress.

Can SPB80N03S2L05 replace IRF1404 in an existing 40 A UPS inverter design?

Yes - with improved performance. SPB80N03S2L05 offers 4.5 mΩ vs. IRF1404's 4.8 mΩ R_DS(on), lower Q_g, and higher E_AS. No layout change is needed (TO-220AB pinout identical), but gate drive timing may require minor adjustment due to faster switching edges.