Infineon Technologies SPD04N60C2

Overview

SPD04N60C2 from Infineon Technologies is a 600 V, 4.5 A N-channel CoolMOS™ power transistor in TO-252 (DPAK) package, featuring 0.95 Ω R_DS(on) at V_GS = 10 V, 2.5 K/W junction-to-case thermal resistance, and periodic avalanche rating up to 130 mJ - deployed in offline SMPS primary-side switching stages for universal-input AC/DC adapters.

For engineers reviewing the SPD04N60C2 datasheet, SPD04N60C2 pinout, SPD04N60C2 application, or SPD04N60C2 equivalent, key selection criteria include its ultra-low gate charge (17.6–22.9 nC), extreme dv/dt rating (6 V/ns), body diode reverse recovery charge (3.2 µC), and thermal derating factor (0.4 W/K) under high-temperature operation.

Technical Context

This 600 V superjunction MOSFET uses Infineon's CoolMOS™ C2 technology to achieve reduced specific on-resistance and lower switching losses versus planar devices. Its gate threshold voltage (3.5–5.5 V) enables robust TTL/CMOS-level drive compatibility while maintaining noise immunity via controlled transconductance (typ. 2.5 S) and low Crss (7 pF).

The device supports hard-switched topologies with validated repetitive avalanche capability (I_AR = 4.5 A, t_AR limited by T_jmax) and energy-rated single-pulse avalanche (E_AS = 130 mJ at I_D = 3.6 A, V_DD = 50 V), enabling reliable operation in flyback and resonant converters without external snubbers.

Key Specifications

Pinout & Package

SPD04N60C2 is housed in a surface-mount TO-252 (DPAK) package with three terminals: Gate (G), Drain (D), and Source (S). The drain pad is electrically connected to the exposed metal tab for low-inductance, high-current path routing and thermal conduction to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP4NK60ZFP and IPP60R099C6, SPD04N60C2 delivers optimal balance of low gate charge, surface-mount form factor, and avalanche ruggedness for mid-power (<25 W), high-frequency flyback designs where layout density and EMI control are critical.

Availability

SPD04N60C2 is available at Aetrix Electronics and suitable for AC/DC adapters, LED driver power stages, and industrial power supplies requiring stable component supply and long-term production continuity.

Supply support for SPD04N60C2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ product line targets high-efficiency, high-reliability power conversion systems - specifically engineered for primary-side switching in offline SMPS, solar inverters, and server power supplies.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPD04N60C2 supports 2.8 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-252 package and must be verified against actual PCB copper area and airflow conditions using the provided R_thJA = 50 K/W (6 cm² cooling area) value.

Does SPD04N60C2 have an integrated body diode, and what are its key parameters?

Yes, it features a monolithic body diode with 4.5 A continuous forward current (I_S), 1.0–1.2 V forward voltage (V_SD) at rated current, and 900–1530 ns reverse recovery time (t_rr). Its Q_rr is 3.2 µC, and peak reverse recovery current (I_rrm) reaches 12 A - critical for evaluating commutation losses in flyback and LLC topologies.

Can SPD04N60C2 be used in avalanche mode, and what are the limits?

Yes - it is explicitly rated for both single-pulse (E_AS = 130 mJ at I_D = 3.6 A, V_DD = 50 V) and repetitive avalanche (I_AR = 4.5 A, E_AR = 0.4 mJ). Repetitive operation is thermally limited by junction temperature and requires strict control of t_AR per the Avalanche SOA curve on page 13 of the datasheet.

What is the recommended gate resistor value for typical 100 kHz flyback operation?

A 10–18 Ω gate resistor is recommended for 100 kHz flyback use, balancing switching speed and ringing suppression. At V_GS = 13 V drive, this yields td(on) ≈ 10 ns and tf ≈ 12.5–18.8 ns (per page 3), minimizing overlap loss while keeping dv/dt within the rated 6 V/ns limit under worst-case layout parasitics.