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Infineon Technologies SPD04P10PLGBTMA1

Part No.:
SPD04P10PLGBTMA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
AetrixSPD04P10PLGBTMA1.pdf
Description:
MOSFET P-CH 100V 4.2A TO252-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,158

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Product details

Overview

SPD04P10PLGBTMA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS® power MOSFET rated for -100 V VDS, 4.2 A continuous drain current, and 850 mΩ RDS(on) at VGS = -10 V. It features logic-level gate drive (VGS(th) = -1 to -2 V), avalanche ruggedness, and AEC-Q101 qualification for automotive use in high-side load switching and reverse polarity protection circuits.

For engineers reviewing the SPD04P10PLGBTMA1 datasheet, SPD04P10PLGBTMA1 pinout, SPD04P10PLGBTMA1 application, or SPD04P10PLGBTMA1 equivalent, key selection criteria include its -100 V breakdown voltage, -4.2 A pulsed current capability, thermal resistance of 3.9 K/W (junction-to-case), RoHS-compliant PG-TO252-3 package, and integrated body diode with 68–85 ns trr.

Technical Context

This MOSFET operates in enhancement mode with a negative gate threshold voltage (-1 to -2 V) enabling direct interface with 3.3 V/5 V logic controllers. Its low RDS(on) and optimized gate charge (Qg = 12–16 nC) support efficient switching in DC-DC converters and motor drivers up to 100 kHz.

The device integrates an avalanche-rated body diode (EAS = 38 mJ) and exhibits stable transconductance (gfs = 1.5–3.0 S) across temperature. Thermal design is supported by a junction-to-case resistance of 3.9 K/W and defined PCB cooling requirements (6 cm² copper area on FR4).

Key Specifications

ParameterValue and Actual Design Meaning
VDS-100 V - Withstands reverse-biased loads up to automotive battery surge levels (ISO 7637-2 Pulse 5a)
RDS(on) max850 mΩ at VGS = -10 V, ID = -3.0 A - Enables <1.1 W conduction loss at 4.2 A in high-side switch layout
ID cont-4.2 A at TC = 25 °C - Supports sustained current in engine control modules and lighting drivers
EAS38 mJ - Absorbs inductive energy during turn-off without external snubber in 24 V systems
tr/tf5.7/5.0 ns - Allows fast switching with minimal overlap loss in synchronous rectifiers
Qg12–16 nC - Matches low-power gate drivers (e.g., TC4427) without requiring external boost circuitry
trr68–85 ns - Limits reverse recovery losses in flyback and buck-boost topologies

Pinout & Package

SPD04P10PLGBTMA1 is housed in a PG-TO252-3 (DPAK) surface-mount package with exposed drain pad for thermal dissipation. The package meets JEDEC MO-238 and supports reflow soldering per IPC-J-STD-020.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminalConnected to system ground or low-side return path; carries full load current
Pin 2 (Gate)Control inputAccepts logic-level voltage (≤ -2 V) to fully enhance channel; requires <16 nC charge
Pin 3 (Drain)Power output / high-side nodeExposed copper pad - must be soldered to ≥6 cm² PCB copper for 3.9 K/W thermal performance

Key Features

FeatureDesign Value
AEC-Q101 qualifiedValidated for automotive underhood applications including engine control units and body electronics
Logic-level gate driveVGS(th) range (-1 to -2 V) ensures full enhancement with standard microcontroller GPIO outputs
Avalanche energy rating38 mJ single-pulse capability eliminates need for external clamping in inductive load switching
Low Qgd/Qg ratio6.9 nC / 16 nC = 0.43 - Reduces Miller-induced shoot-through risk in half-bridge configurations
RoHS-compliant platingPb-free lead finish compatible with lead-free reflow profiles and automotive end-of-life requirements

Applications

Automotive Reverse Polarity ProtectionHigh-Side Load Switch

Use Scenario: Protects infotainment head units and ADAS cameras from battery misconnection during service.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as high-side switch with gate driven by microcontroller GPIO.

Use Value: Eliminates need for series diode; reduces voltage drop from 0.7 V to <50 mV at 4 A, improving system efficiency and thermal margin.

Use Scenario: Controls power delivery to HVAC actuators and seat-motor drivers in 12 V/24 V vehicle platforms.

IC Role / Device Role / Timing Role: High-side switch enabling load isolation and diagnostic current sensing via source resistor.

Use Value: Avalanche rating handles inductive kickback without snubbers; RDS(on) stability over temperature ensures consistent ON-resistance across -40 to 150 °C.

DC-DC Synchronous RectifierIndustrial Power Supply OR-ing

Use Scenario: Replaces Schottky diode in secondary-side synchronous rectification of isolated flyback converters.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by transformer-coupled gate drive signal.

Use Value: 850 mΩ RDS(on) cuts conduction loss by >60% vs. 40 V/5 A Schottky, increasing 12 V output efficiency from 88% to 92%.

Use Scenario: Enables redundant 24 V power rails in PLC backplanes and industrial HMIs.

IC Role / Device Role / Timing Role: OR-ing FET placed between dual power supplies to prevent backfeed and enable hot-swap capability.

Use Value: Body diode forward voltage (0.94 V typ) provides fast turn-on during supply switchover; trr < 85 ns minimizes cross-conduction during transition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF9540NPBFVDS = -100 V, RDS(on) = 200 mΩ @ VGS = -10 V, but VGS(th) = -2 to -4 V - requires higher gate drive voltageNot logic-level; unsuitable for 3.3 V MCU control without level-shiftingSelect only if gate driver supports ≥ -4.5 V and lower RDS(on) justifies added complexity
STP12PF06VDS = -60 V, RDS(on) = 120 mΩ @ VGS = -10 V, AEC-Q101 qualified but lower voltage ratingCannot replace in 24 V automotive surge environments (e.g., load dump) due to insufficient VDSAcceptable only in 12 V systems with strict surge limitation and where <60 V operation is guaranteed

Compared with IRF9540NPBF and STP12PF06, SPD04P10PLGBTMA1 uniquely combines -100 V rating, logic-level drive, and AEC-Q101 qualification-enabling direct MCU interfacing in 24 V automotive systems without gate boosting or derating.

Availability

SPD04P10PLGBTMA1 is available at Aetrix Electronics and suitable for automotive reverse polarity protection, high-side load switching, and industrial OR-ing applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SPD04P10PLGBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949.

This part belongs to Infineon's SIPMOS® P-channel portfolio, designed specifically for robust, logic-compatible high-side switching in harsh automotive and industrial environments.

FAQ

What is the maximum safe operating temperature for SPD04P10PLGBTMA1?

The device supports junction temperatures from -55 °C to +175 °C. For continuous operation at 4.2 A, case temperature must remain ≤100 °C per derating curve on page 4 of the datasheet. Thermal design requires ≥6 cm² copper area on FR4 PCB with vertical mounting in still air.

Does SPD04P10PLGBTMA1 require a gate resistor in automotive applications?

Yes-a 10–47 Ω gate resistor is recommended to dampen ringing and limit peak gate current during fast switching. This prevents overshoot beyond ±20 V VGS rating and reduces EMI in CAN/LIN bus proximity. Gate resistor value depends on driver strength and layout parasitics.

Can SPD04P10PLGBTMA1 be used in parallel configurations?

Parallel operation is feasible due to positive RDS(on) temperature coefficient, which promotes current sharing. However, matched gate drive routing, identical PCB copper area per device, and individual gate resistors are mandatory to avoid thermal runaway above 125 °C junction temperature.

Is the body diode suitable for freewheeling in inductive loads?

Yes-the integrated body diode has 68–85 ns reverse recovery time and 178–223 nC Qrr, making it suitable for freewheeling in 100 kHz-class DC-DC converters. For high-di/dt loads (>100 A/µs), external Schottky clamping may further reduce losses and EMI.

SPD04P10PLGBTMA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
4.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:
2V @ 380µA
Gate Charge (Qg) (Max) @ Vgs:
16 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
372 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
38W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
PG-TO252-3

SPD04P10PLGBTMA1 FAQ

1.How can I place an order for SPD04P10PLGBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD04P10PLGBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD04P10PLGBTMA1 reliable?

The price and inventory of SPD04P10PLGBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD04P10PLGBTMA1 is usually 5 days.

3.What payment methods are accepted for SPD04P10PLGBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD04P10PLGBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD04P10PLGBTMA1?

SPD04P10PLGBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD04P10PLGBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD04P10PLGBTMA1?

For technical support, including SPD04P10PLGBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD04P10PLGBTMA1 requirements.

6.How does Aetrix verify that SPD04P10PLGBTMA1 is sourced from the original manufacturer or authorized distributors?

All SPD04P10PLGBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD04P10PLGBTMA1 meets industry standards.

7.What is the process for return or replacement of SPD04P10PLGBTMA1?

All SPD04P10PLGBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD04P10PLGBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD04P10PLGBTMA1 part is unused and in its original packaging.

Return procedure for SPD04P10PLGBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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