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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD30N03S2L07GBTMA1

Name: SPD30N03S2L07GBTMA1
Brand: Infineon Technologies
SKU: SPD30N03S2L07GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD30N03S2L07GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD30N03S2L07GBTMA1.pdf

Description:: MOSFET N-CH 30V 30A TO252-3

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Product details

Overview

SPD30N03S2L07GBTMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in PG-TO252-3 package, rated for 30 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 6.7 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPD30N03S2L07GBTMA1 datasheet, SPD30N03S2L07GBTMA1 pinout, SPD30N03S2L07GBTMA1 application, or SPD30N03S2L07GBTMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low thermal resistance (R_thJC = 0.7–1.1 K/W), avalanche energy (E_AS = 250 mJ), and dv/dt ruggedness (6 kV/µs).

Technical Context

This MOSFET operates in enhancement mode with a threshold voltage range of 1.2–2.0 V, enabling direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting. Its low R_DS(on) and optimized gate charge (Q_g = 51–68 nC) support high-frequency switching up to 500 kHz in synchronous buck regulators.

The device integrates a robust body diode with t_rr = 41–51 ns and Q_rr = 46–58 nC, suitable for freewheeling in hard-switched topologies. Thermal design is supported by validated R_thJC and transient impedance curves, with safe operating area defined up to 100 µs pulse width at 25 °C case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V rail systems with margin against transients
R_DS(on) @ V_GS=10 V	6.7 mΩ max - Enables ≤1.5 W conduction loss at 30 A in thermally optimized layouts
I_D cont. @ T_C=25°C	30 A - Sustains full load in compact motor drivers and e-fuse circuits without derating
E_AS	250 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless designs
dv/dt rating	6 kV/µs - Ensures reliable operation under fast voltage transients in automotive and industrial environments
T_j max	175 °C - Supports operation in sealed enclosures or high-ambient-temperature applications
Q_g	68 nC max - Balances switching speed and gate driver power requirement for 100–300 kHz PWM

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, single-drain-tab configuration with exposed thermal pad on leadframe. Standard footprint per Infineon outline drawing 02-09-2008.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground plane or current-sense shunt
Pin 2 (Gate)	Control input	Logic-level compatible; requires <20 V absolute max; drives with ≤100 Ω series resistor
Pin 3 (Drain)	Power output / high-side switch node	Exposed copper tab - must be soldered to PCB copper pour for thermal and current path integrity

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct drive from 3.3 V MCU GPIOs without external level shifters
Avalanche-rated	Single-pulse E_AS = 250 mJ supports unclamped inductive switching in relay drivers and solenoid controls
Low R_DS(on) × Q_g	FOM = ~450 mΩ·nC - improves efficiency in high-frequency SMPS while reducing gate drive losses
175 °C T_j rating	Enables use in under-hood automotive modules and sealed industrial enclosures without forced air cooling

Applications

Automotive Body Control Module

Industrial DC Motor Driver

Use Scenario: Driving 12 V/24 V solenoids, fans, and lamps in BCM submodules with space-constrained PCB layout.

IC Role / Device Role / Timing Role: Low-side power switch controlling load current with integrated body diode freewheeling.

Use Value: Logic-level gate eliminates need for discrete level-shifter ICs; 175 °C rating ensures reliability in engine-bay-adjacent locations.

Use Scenario: Half-bridge leg in 24 V brushed DC motor control for factory automation actuators.

IC Role / Device Role / Timing Role: High-current, high-dv/dt capable switch in PWM-driven H-bridge with 50–200 kHz switching frequency.

Use Value: 6 kV/µs dv/dt rating prevents false turn-on during shoot-through events; low R_DS(on) reduces I²R heating at 30 A peak.

Server PSU Synchronous Rectifier

Smart Power Outlet Switch

Use Scenario: Secondary-side synchronous rectification in 12 V output stage of telecom/server PSUs.

IC Role / Device Role / Timing Role: Fast-turning, low-loss rectifier replacing Schottky diodes in LLC resonant converters.

Use Value: Q_rr = 46–58 nC and t_rr = 41–51 ns minimize reverse recovery losses; R_DS(on) < 7.4 mΩ cuts conduction loss vs. 40 V Schottkys.

Use Scenario: Solid-state replacement for mechanical relays in smart home power outlets with zero-crossing detection.

IC Role / Device Role / Timing Role: Load switch with overcurrent and thermal protection enabled via external monitoring circuitry.

Use Value: Avalanche rating allows safe interruption of inductive loads (e.g., transformers, small motors); TO252 footprint simplifies retrofit into legacy relay PCBs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB034N03L G	R_DS(on) = 3.4 mΩ @ 10 V (lower), but PG-TO263-3 package (larger footprint, higher R_thJC)	Better conduction efficiency in high-current, low-frequency apps; less suitable for space-constrained TO252 layouts	Select when thermal budget permits larger package and lowest possible R_DS(on) is critical
IRL3803PbF	R_DS(on) = 8.0 mΩ @ 10 V (higher), older generation, no dv/dt rating or avalanche spec published	Limited to non-critical consumer-grade switching; not recommended for automotive or industrial surge environments	Consider only for cost-sensitive, low-reliability applications where Infineon's ruggedness specs are unnecessary

Compared with IPB034N03L G and IRL3803PbF, SPD30N03S2L07GBTMA1 delivers optimal balance of logic-level drive, TO252 footprint, avalanche safety, and 6 kV/µs dv/dt immunity-making it preferred for space-constrained, high-reliability 24 V system switches.

Availability

SPD30N03S2L07GBTMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drivers, server power supply synchronous rectifiers, and smart power outlet switches requiring stable component supply and long-term lifecycle assurance.

Supply support for SPD30N03S2L07GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to AEC-Q101 and IATF 16949 standards.

This device belongs to the OptiMOS™ 30 V logic-level power transistor family, engineered for high-efficiency, high-ruggedness switching in 12–24 V systems where gate drive simplicity, thermal resilience, and transient immunity are critical.

FAQ

Is SPD30N03S2L07GBTMA1 suitable for 3.3 V microcontroller gate drive?

Yes. Its gate threshold voltage range (1.2–2.0 V) and guaranteed R_DS(on) at V_GS = 4.5 V (7.4–9.8 mΩ) ensure full enhancement with 3.3 V logic outputs. A 10 Ω gate resistor is recommended to dampen ringing without compromising switching speed.

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the device supports 24 A continuous drain current, as confirmed by the ID = f(T_C) derating curve on page 3 of the datasheet. This assumes adequate PCB copper area (≥6 cm²) and no airflow.

Does this MOSFET require a gate resistor for stability?

Yes. A series gate resistor (typically 5–22 Ω) is required to control dV/dt at the gate, suppress oscillation due to gate-drain capacitance (Crss = 180–270 pF), and limit peak gate current during fast switching. Values >30 Ω significantly increase switching losses.

Can SPD30N03S2L07GBTMA1 replace a mechanical relay in AC load switching?

No. It is a DC-only N-channel MOSFET rated for 30 V V_DS and lacks internal back-to-back structure or zero-crossing capability required for safe AC switching. Use only in DC load control or as a synchronous rectifier in isolated DC-DC stages.

SPD30N03S2L07GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.7mOhm @ 30A, 10V

Vgs(th) (Max) @ Id:: 2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

SPD30N03S2L07GBTMA1 FAQ

1.How can I place an order for SPD30N03S2L07GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD30N03S2L07GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD30N03S2L07GBTMA1 reliable?

The price and inventory of SPD30N03S2L07GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD30N03S2L07GBTMA1 is usually 5 days.

3.What payment methods are accepted for SPD30N03S2L07GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD30N03S2L07GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD30N03S2L07GBTMA1?

SPD30N03S2L07GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD30N03S2L07GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD30N03S2L07GBTMA1?

For technical support, including SPD30N03S2L07GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD30N03S2L07GBTMA1 requirements.

6.How does Aetrix verify that SPD30N03S2L07GBTMA1 is sourced from the original manufacturer or authorized distributors?

All SPD30N03S2L07GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD30N03S2L07GBTMA1 meets industry standards.

7.What is the process for return or replacement of SPD30N03S2L07GBTMA1?

All SPD30N03S2L07GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD30N03S2L07GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD30N03S2L07GBTMA1 part is unused and in its original packaging.

Return procedure for SPD30N03S2L07GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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