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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD30N03S2L20GBTMA1

Name: SPD30N03S2L20GBTMA1
Brand: Infineon Technologies
SKU: SPD30N03S2L20GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD30N03S2L20GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD30N03S2L20GBTMA1.pdf

Description:: MOSFET N-CH 30V 30A TO252-3

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Product details

Overview

SPD30N03S2L20GBTMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in PG-TO252-3 package, rated for 30 V V_DS, 20 mΩ R_DS(on) at V_GS = 10 V, and 30 A continuous drain current at T_C = 25 °C. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency DC-DC converters and motor control stages.

For engineers reviewing the SPD30N03S2L20GBTMA1 datasheet, SPD30N03S2L20GBTMA1 pinout, SPD30N03S2L20GBTMA1 application, or SPD30N03S2L20GBTMA1 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), thermal resistance (R_thJC = 1.7–2.5 K/W), reverse diode forward voltage (V_SD = 1.1–1.4 V), and dv/dt ruggedness (6 kV/µs).

Technical Context

This MOSFET operates in enhancement mode with a threshold voltage range of 1.2–2.0 V, enabling direct drive from 3.3 V or 5 V microcontrollers without level-shifting. Its low R_DS(on) and optimized C_iss/C_oss ratio (530–700 pF / 200–275 pF) support high-frequency switching up to 1 MHz in synchronous buck topologies.

The device integrates avalanche energy rating (E_AS = 70 mJ) and dv/dt immunity (6 kV/µs), allowing robust operation under inductive load switching and transient overvoltage conditions without external snubbers in industrial motor drives and automotive body electronics.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 24 V nominal systems with 20 % margin
R_DS(on) @ V_GS = 10 V	20 mΩ max - Enables ≤0.6 W conduction loss at 30 A, reducing heatsink requirements
I_D continuous @ T_C = 25 °C	30 A - Supports high-current load switching in power distribution modules
Q_g total	14.3–19 nC - Low gate charge enables efficient 500 kHz–1 MHz PWM drive with <1 W driver loss
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient environments without derating
E_AS	70 mJ - Withstands single-pulse inductive energy without failure in relay/motor coil drivers
V_SD @ I_F = 30 A	1.1–1.4 V - Low body diode forward drop improves efficiency in synchronous rectification

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, thermally enhanced with exposed drain pad. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Accepts logic-level input (1.2–2.0 V threshold); requires <20 nC total gate charge for full turn-on
Pin 2 (Drain)	High-side or low-side power path	Internally connected to exposed copper tab; primary thermal path to PCB copper area
Pin 3 (Source)	Reference node for gate drive and current sensing	Provides return path for load current and gate drive loop; critical for EMI control in high-dI/dt switching

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V MCUs and FPGAs
Avalanche-rated	70 mJ single-pulse E_AS supports reliable inductive load switching without external protection
Low thermal resistance	R_thJC = 1.7–2.5 K/W allows >40 W power dissipation with minimal ΔT between die and PCB
dv/dt ruggedness	6 kV/µs rating prevents false turn-on during fast voltage transients in noisy industrial environments
Optimized FOM	Q_g × R_DS(on) ≈ 0.3–0.4 nC·Ω minimizes combined switching + conduction losses in high-frequency SMPS

Applications

DC-DC Converters

Motor Control Stages

Use Scenario: Synchronous buck converter in 24 V industrial PLC power supply.

IC Role / Device Role / Timing Role: High-side power switch operating at 500 kHz with 30 A peak output current.

Use Value: 20 mΩ R_DS(on) reduces conduction loss to <0.6 W, enabling compact design without forced air cooling.

Use Scenario: H-bridge leg in 24 V brushed DC motor driver for automated gate actuator.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional 30 A stall current with 100 ns dead-time control.

Use Value: 175 °C T_j max and avalanche rating ensure reliability during frequent start-stop cycles and back-EMF spikes.

Automotive Body Electronics

Power Distribution Modules

Use Scenario: Load switch for LED headlight dimming circuit in 12 V/24 V dual-voltage vehicle platform.

IC Role / Device Role / Timing Role: Logic-level controlled high-side switch with integrated reverse polarity protection.

Use Value: V_GS(th) ≤ 2.0 V ensures full enhancement from 3.3 V CAN/LIN controller outputs, eliminating level shifters.

Use Scenario: Solid-state replacement for mechanical relay in 30 A battery disconnect unit.

IC Role / Device Role / Timing Role: Main power path switch with overcurrent and thermal foldback via external sense resistor.

Use Value: 120 A pulsed ID capability and 6 kV/µs dv/dt immunity prevent false triggering during load dump events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB034N03L G	R_DS(on) = 3.4 mΩ lower (16.6 mΩ typ), Q_g = 22.5 nC higher, same PG-TO252-3 package	Better conduction loss but higher gate drive power; suited for <300 kHz operation where efficiency dominates	Select when thermal budget is tight and gate drive capability supports ≥22 nC charge
STP30NF03L	R_DS(on) = 25 mΩ max, T_j max = 150 °C, no specified E_AS rating	Limited avalanche robustness and lower temperature rating reduce suitability for inductive loads in harsh environments	Consider only for cost-sensitive, non-avalanche-critical 24 V linear regulators or lighting switches

Compared with IPB034N03L G and STP30NF03L, SPD30N03S2L20GBTMA1 offers balanced trade-offs: superior dv/dt immunity and guaranteed 175 °C operation versus tighter R_DS(on) but higher Q_g, and broader ruggedness than STP30NF03L at comparable price point.

Availability

SPD30N03S2L20GBTMA1 is available at Aetrix Electronics and suitable for DC-DC converters, motor control stages, automotive body electronics, and power distribution modules requiring stable component supply across extended temperature and high-reliability production cycles.

Supply support for SPD30N03S2L20GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101.

This device belongs to the OptiMOS™ 30 V logic-level power transistor family, engineered for high-efficiency, high-density power conversion in space-constrained industrial and automotive applications where thermal performance and ruggedness are critical.

FAQ

What is the maximum allowable gate-source voltage for SPD30N03S2L20GBTMA1?

The absolute maximum V_GS is ±20 V per datasheet specifications. Operation beyond ±16 V risks permanent gate oxide damage. For reliable long-term use, gate drive should be clamped to ±12 V with transient suppression, especially in noisy automotive or industrial environments where voltage spikes may exceed ratings.

Does SPD30N03S2L20GBTMA1 require a gate resistor for stability?

Yes - a series gate resistor (typically 5–15 Ω) is required to dampen ringing caused by gate loop inductance and Miller capacitance. Without it, oscillation during switching can cause shoot-through, localized heating, and premature failure. The resistor value must balance switching speed against EMI and gate driver thermal stress.

Can SPD30N03S2L20GBTMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Thermal coupling and gate drive skew must be minimized: use identical trace lengths, Kelvin source connections, and individual gate resistors. Derate total current by 15 % to account for parameter spread in R_DS(on) and V_GS(th) across units at elevated temperature.

Is the body diode suitable for synchronous rectification in a buck converter?

Yes - the body diode has V_SD = 1.1–1.4 V at 30 A and t_rr = 15–18 ns, making it viable for synchronous rectification at ≤500 kHz. However, its reverse recovery charge (Q_rr = 2–3 nC) introduces minor switching loss; optimal performance requires precise dead-time control to avoid cross-conduction.

SPD30N03S2L20GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 18A, 10V

Vgs(th) (Max) @ Id:: 2V @ 23µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 700 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 60W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

SPD30N03S2L20GBTMA1 FAQ

1.How can I place an order for SPD30N03S2L20GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD30N03S2L20GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD30N03S2L20GBTMA1 reliable?

The price and inventory of SPD30N03S2L20GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD30N03S2L20GBTMA1 is usually 5 days.

3.What payment methods are accepted for SPD30N03S2L20GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD30N03S2L20GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD30N03S2L20GBTMA1?

SPD30N03S2L20GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD30N03S2L20GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD30N03S2L20GBTMA1?

For technical support, including SPD30N03S2L20GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD30N03S2L20GBTMA1 requirements.

6.How does Aetrix verify that SPD30N03S2L20GBTMA1 is sourced from the original manufacturer or authorized distributors?

All SPD30N03S2L20GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD30N03S2L20GBTMA1 meets industry standards.

7.What is the process for return or replacement of SPD30N03S2L20GBTMA1?

All SPD30N03S2L20GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD30N03S2L20GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD30N03S2L20GBTMA1 part is unused and in its original packaging.

Return procedure for SPD30N03S2L20GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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