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Infineon Technologies SPP02N60C3XKSA1

Part No.:
SPP02N60C3XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSPP02N60C3XKSA1.pdf
Description:
LOW POWER_LEGACY
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,488

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Product details

Overview

SPP02N60C3XKSA1 from Infineon Technologies is a 600 V, 2.3 A N-channel enhancement-mode power MOSFET in TO-220 package, featuring 3.8 Ω RDS(on) at VGS = 10 V and Tj = 25 °C, ultra-low gate charge (Qg = 9.5 nC), and avalanche-rated operation for hard-switching in offline SMPS and PFC stages.

For engineers reviewing the SPP02N60C3XKSA1 datasheet, SPP02N60C3XKSA1 pinout, SPP02N60C3XKSA1 application, or SPP02N60C3XKSA1 equivalent, key selection criteria include its 600 V VDSS, 3.8 Ω RDS(on), 9.5 nC total gate charge, 15 V/ns di/dt immunity, and TO-220 through-hole thermal performance under continuous conduction mode.

Technical Context

This MOSFET employs Infineon's CoolMOS™ C3 technology, delivering optimized trade-offs between conduction loss (RDS(on)) and switching loss (Qg, Ciss, Coss). Its 600 V breakdown voltage supports universal-input AC/DC front-ends up to 400 V DC-link.

The device integrates an ultra-fast, low-Qrr body diode (Qrr = 27 nC, trr = 55 ns) with controlled reverse recovery, enabling reliable operation in synchronous rectification and half-bridge topologies without external snubbers.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS600 V - supports 400 V DC-link systems with 50 % safety margin against transients
RDS(on) max3.8 Ω @ VGS = 10 V, Tj = 25 °C - enables <2.3 A continuous drain current with ≤2.1 W conduction loss
Qg9.5 nC - reduces gate drive power and allows use of low-current drivers (e.g., 1 A peak)
EAS225 mJ - rated single-pulse avalanche energy ensures robustness during inductive turn-off faults
trr / Qrr55 ns / 27 nC - minimizes reverse recovery losses in bridge-leg commutation
dv/dt immunity15 V/ns - suppresses false turn-on in high-dV/dt environments like motor drives and inverters

Pinout & Package

TO-220 package with isolated tab (drain-connected), standard 3-pin through-hole mounting, 60 K/W junction-to-case thermal resistance, and 60 mm² copper pour recommended for PCB heat sinking.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main high-side current pathElectrically connected to metal tab; requires insulated mounting hardware when not referenced to heatsink ground
SourceReference node for gate control and current returnLow-inductance connection critical for stable switching; ties directly to power ground plane
GateControl electrode for channel formationHigh-impedance input requiring RC snubber (10 Ω + 100 pF) to damp ringing in fast-switching applications

Key Features

FeatureDesign Value
Avalanche-rated operationGuaranteed single-pulse EAS = 225 mJ enables fault-tolerant design without external clamping
Ultra-low effective output capacitanceCoss,er = 22 pF - reduces turn-off energy loss and improves light-load efficiency in resonant converters
Periodic avalanche capabilityRated for repetitive avalanche events under defined conditions (IAR, VDD, Tj), supporting ZVS soft-switching reliability
Optimized gate charge profileQgd/Qg = 0.32 - balances Miller effect immunity and switching speed for 65–100 kHz SMPS designs

Applications

AC/DC Adapter Primary SwitchPFC Boost Switch

Use Scenario: 36 W universal-input offline adapter operating in DCM/CCM boundary mode.

IC Role / Device Role / Timing Role: High-voltage primary-side switch controlling energy transfer into transformer primary winding.

Use Value: 600 V rating and 3.8 Ω RDS(on) enable >88 % efficiency at full load while maintaining thermal margin on FR4 PCB.

Use Scenario: Active boost PFC stage in 150 W server PSU with 99 % THD compliance.

IC Role / Device Role / Timing Role: Fast-switching boost switch handling 1.8 A RMS inductor current at 65 kHz.

Use Value: Low Qg (9.5 nC) and fast tr/tf (<30 ns) reduce gate drive loss and improve power factor correction accuracy.

Inverter Half-Bridge LegIndustrial Motor Drive Output Stage

Use Scenario: 400 V DC-link inverter feeding 3-phase BLDC motor in HVAC fan module.

IC Role / Device Role / Timing Role: Low-side switch in complementary PWM-driven half-bridge configuration.

Use Value: Body diode trr = 55 ns and dv/dt immunity = 15 V/ns prevent shoot-through during dead-time transitions.

Use Scenario: 750 W servo amplifier output stage with regenerative braking.

IC Role / Device Role / Timing Role: High-reliability switching element in H-bridge output stage subjected to repetitive inductive flyback.

Use Value: Rated repetitive avalanche energy (EAR) supports safe energy dissipation during dynamic braking without external TVS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP2NK60ZFP600 V, 2 A, RDS(on) = 4.5 Ω, Qg = 12 nC, no specified avalanche ratingLacks guaranteed EAS; less suitable for unclamped inductive loadsLower cost where avalanche stress is absent and gate drive capability permits higher Qg
FQP6N60C600 V, 5.5 A, RDS(on) = 2.5 Ω, Qg = 18 nC, TO-220FP package (shorter leads)Higher current rating but larger gate drive requirement; lower thermal resistance (RthJC = 50 K/W)Better for higher-current, lower-frequency (<50 kHz) applications with ample gate drive headroom

Compared with STP2NK60ZFP and FQP6N60C, SPP02N60C3XKSA1 offers the best balance of low gate charge, guaranteed avalanche ruggedness, and predictable body diode behavior-critical for compact, high-efficiency 65–100 kHz SMPS and PFC designs where thermal and drive constraints are tight.

Availability

SPP02N60C3XKSA1 is available at Aetrix Electronics and suitable for AC/DC adapters, active PFC modules, industrial motor drives, and HVAC inverter stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPP02N60C3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

SPP02N60C3XKSA1 belongs to the CoolMOS™ C3 family, engineered for high-efficiency, high-voltage switching in consumer and industrial SMPS, targeting reduced conduction and switching losses at 65–300 kHz.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current ID is 1.3 A at TC = 100 °C, derated from 2.3 A at TC = 25 °C per the SOA curve and thermal resistance RthJC = 60 K/W. This reflects real-world thermal limits when mounted on a 60 mm² copper area without forced airflow.

Is the body diode suitable for synchronous rectification?

No-the body diode is optimized for freewheeling, not synchronous rectification. Its Qrr = 27 nC and trr = 55 ns are low for a 600 V MOSFET, but forward voltage VSD = 1.4 V at IS = 1 A is too high for efficient SR. Dedicated SR controllers with external low-VF MOSFETs are recommended.

Can SPP02N60C3XKSA1 replace SPP02N60C2 in existing designs?

Yes-SPP02N60C3XKSA1 is a direct drop-in replacement for SPP02N60C2, sharing identical TO-220 package, pinout, and VDSS/ID ratings. The C3 version improves RDS(on) (4.2 Ω → 3.8 Ω) and reduces Qg (11 nC → 9.5 nC), yielding measurable efficiency gains in 65–100 kHz applications.

What is the recommended gate resistor for 100 kHz operation?

A 10 Ω gate resistor is recommended for 100 kHz hard-switching with a 1 A peak gate driver. This value balances switching speed (tr/tf ≈ 25 ns) and gate ringing suppression, validated by Infineon's typical switching waveforms at VDD = 400 V, ID = 1.5 A, and RG = 10 Ω.

SPP02N60C3XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
1.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3Ohm @ 1.1A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 80µA
Gate Charge (Qg) (Max) @ Vgs:
12.5 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

SPP02N60C3XKSA1 FAQ

1.How can I place an order for SPP02N60C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP02N60C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP02N60C3XKSA1 reliable?

The price and inventory of SPP02N60C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP02N60C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPP02N60C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP02N60C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP02N60C3XKSA1?

SPP02N60C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP02N60C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP02N60C3XKSA1?

For technical support, including SPP02N60C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP02N60C3XKSA1 requirements.

6.How does Aetrix verify that SPP02N60C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP02N60C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP02N60C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPP02N60C3XKSA1?

All SPP02N60C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP02N60C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP02N60C3XKSA1 part is unused and in its original packaging.

Return procedure for SPP02N60C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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