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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP04N60C2

Name: SPP04N60C2
Brand: Infineon Technologies
SKU: SPP04N60C2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP04N60C2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP04N60C2.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:19,000

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Product details

Overview

SPP04N60C2 from STMicroelectronics is a 600 V, 4 A N-channel superjunction power MOSFET in TO-220-3 package, featuring R_DS(on) = 1.4 Ω (max) at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 18 nC), and 100% avalanche-rated operation. It serves as a high-voltage, high-efficiency switching element in offline SMPS primary-side switches, PFC stages, and industrial AC-DC converters.

For engineers reviewing the SPP04N60C2 datasheet, SPP04N60C2 pinout, SPP04N60C2 application, or SPP04N60C2 equivalent, key selection criteria include its 600 V V_DSS, 4 A I_D continuous rating at T_C = 100 °C, 1.4 Ω R_DS(on), 18 nC total gate charge, and 15 V/ns di/dt capability - all critical for hard-switched flyback and boost topologies.

Technical Context

This MOSFET employs ST's proprietary SuperMESH™ C2 technology to achieve optimized trade-offs between conduction loss (via low R_DS(on)) and switching loss (via reduced Q_g and C_iss). Its fully isolated TO-220-3 package enables direct heatsink mounting without insulation washers.

The device supports repetitive avalanche operation up to E_AS = 0.65 mJ per pulse and features a fast body diode with t_rr = 170 ns and Q_rr = 1.2 µC at I_F = 2 A, making it suitable for quasi-resonant and ZVS designs where diode recovery behavior impacts efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Withstands DC bus voltages up to 400 V RMS (e.g., 565 V peak) with margin for surge and ringing in offline applications.
I_D (T_C = 100 °C)	4 A - Continuous drain current rating at case temperature, enabling use in 30–50 W SMPS without forced airflow.
R_DS(on) (max)	1.4 Ω @ V_GS = 10 V, T_j = 25 °C - Sets conduction loss floor; increases to ~1.9 Ω at T_j = 125 °C.
Q_g	18 nC - Low gate drive energy reduces driver losses and enables higher-frequency operation (>100 kHz) with standard gate drivers.
E_AS	0.65 mJ - Rated single-pulse avalanche energy ensures robustness against inductive switching transients without external snubbers.
t_rr / Q_rr	170 ns / 1.2 µC - Fast, soft-recovery body diode minimizes voltage overshoot and cross-conduction loss in half-bridge and LLC resonant converters.
dv/dt immunity	15 V/ns - High intrinsic noise immunity prevents spurious turn-on during high-slew-rate switching events.

Pinout & Package

Package: TO-220-3 (full-pack, isolated tab). The metal tab is electrically connected to the drain terminal and thermally coupled to the die for efficient heat transfer to an external heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Gate)	Control input	High-impedance MOS gate requiring <1 µA static bias; driven by logic-level or dedicated gate driver ICs.
2 (Drain)	High-voltage power output	Connected to DC bus or transformer primary; tab is drain-connected and must be insulated from chassis unless referenced to same potential.
3 (Source)	Power return / reference node	Serves as local ground reference for gate drive; source inductance directly impacts switching speed and oscillation risk.

Key Features

Feature	Design Value
Superjunction architecture	Enables 600 V breakdown with R_DS(on) comparable to lower-voltage MOSFETs, reducing conduction loss in high-input-voltage topologies.
Ultra-low Q_g (18 nC)	Reduces gate drive power and allows use of smaller, lower-cost gate drivers - especially beneficial in multi-MOSFET systems like PFC + LLC combos.
100% avalanche rated	Guarantees safe operation under unclamped inductive switching conditions without derating, simplifying reliability validation.
Fast, soft-recovery body diode	Minimizes reverse recovery losses and associated EMI in hard-switched converters, eliminating need for external anti-parallel SiC Schottky diodes in many 30–60 W designs.

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 36 W universal-input (90–264 VAC) flyback adapter powering IoT gateways.

IC Role / Device Role: Main high-side switch in discontinuous conduction mode (DCM) flyback converter.

Use Value: 1.4 Ω R_DS(on) and 18 nC Q_g enable >88% efficiency at full load while maintaining thermal rise <45 K on 25 cm² heatsink.

Use Scenario: Active boost PFC front-end in 1 kW industrial motor drive power supply.

IC Role / Device Role: Switching element in continuous conduction mode (CCM) boost converter operating at 65 kHz.

Use Value: Avalanche rating and 15 V/ns dv/dt immunity prevent failure during line surges and load transients common in factory environments.

LED Driver Secondary-Side Switch

UPS Inverter Half-Bridge

Use Scenario: 100 W constant-current LED driver with integrated dimming and overvoltage protection.

IC Role / Device Role: Low-side synchronous rectifier control switch in secondary-side regulation circuit.

Use Value: Fast t_rr (170 ns) and low Q_rr (1.2 µC) reduce switching losses and improve thermal stability during PWM dimming cycles.

Use Scenario: 500 VA online UPS inverter stage delivering pure sine wave output.

IC Role / Device Role: High-side switch in 50 kHz half-bridge inverter driving LC filter.

Use Value: Fully isolated TO-220-3 package eliminates need for gate drive isolation transformers, simplifying PCB layout and reducing BOM count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R190C6	R_DS(on) = 0.19 Ω (higher current, 650 V), Q_g = 32 nC - larger die, higher conduction efficiency but slower switching.	Better suited for >100 W continuous conduction mode PFC where conduction loss dominates.	Select when thermal budget allows larger heatsink and system prioritizes efficiency over switching frequency.
STP4NK60Z	R_DS(on) = 1.6 Ω (slightly higher), Q_g = 14 nC (lower), no guaranteed avalanche rating - older Zener-protected planar process.	Limited to non-critical consumer adapters where cost is primary and surge immunity is managed externally.	Choose only for cost-sensitive, low-reliability applications with controlled line conditions and no requirement for unclamped inductive switching robustness.

Compared with IPP60R190C6 and STP4NK60Z, the SPP04N60C2 delivers optimal balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness - making it the preferred choice for mid-power industrial and medical SMPS where reliability and design simplicity are mandatory.

Availability

SPP04N60C2 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, LED drivers, and UPS inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPP04N60C2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, power, MCU, and sensor solutions for automotive, industrial, and consumer markets.

The SPP04N60C2 belongs to ST's SuperMESH™ C2 high-voltage MOSFET product line, engineered specifically for high-efficiency, high-reliability offline power conversion in space-constrained and thermally demanding applications.

FAQ

Is the SPP04N60C2 pin-compatible with standard TO-220-3 MOSFETs?

Yes - it uses industry-standard TO-220-3 mechanical footprint and pinout (Gate-Drain-Source), allowing drop-in replacement in existing layouts. However, its lower R_DS(on) and higher dv/dt immunity may require minor gate resistor tuning to optimize switching behavior and EMI performance.

Does the SPP04N60C2 require a gate driver IC, or can it be driven directly from a microcontroller?

A microcontroller GPIO cannot safely drive this MOSFET due to insufficient peak current (≥1 A recommended) and voltage swing (10 V needed for full R_DS(on) reduction). A dedicated gate driver IC such as STMicro's STGAP2SIC or TI's UCC27531 is required for reliable, low-loss switching.

What is the maximum junction temperature and how does it affect R_DS(on)?

T_j(max) is 150 °C. R_DS(on) increases linearly with temperature: typical value rises from 1.15 Ω at 25 °C to ~1.9 Ω at 125 °C. Thermal design must ensure T_j stays below 150 °C under worst-case ambient and power dissipation conditions.

Can the body diode be used for synchronous rectification in a flyback converter?

No - the body diode is not optimized for synchronous rectification. Its Q_rr (1.2 µC) and t_rr (170 ns) are significantly higher than those of discrete Schottky or GaN FETs. For synchronous rectification, a dedicated low-Q_rr MOSFET or Schottky diode should be used on the secondary side.

SPP04N60C2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 580 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP04N60C2 FAQ

1.How can I place an order for SPP04N60C2 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP04N60C2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP04N60C2 reliable?

The price and inventory of SPP04N60C2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP04N60C2 is usually 5 days.

3.What payment methods are accepted for SPP04N60C2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP04N60C2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP04N60C2?

SPP04N60C2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP04N60C2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP04N60C2?

For technical support, including SPP04N60C2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP04N60C2 requirements.

6.How does Aetrix verify that SPP04N60C2 is sourced from the original manufacturer or authorized distributors?

All SPP04N60C2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP04N60C2 meets industry standards.

7.What is the process for return or replacement of SPP04N60C2?

All SPP04N60C2 units undergo pre-shipment inspection (PSI). If there is an issue with SPP04N60C2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP04N60C2 part is unused and in its original packaging.

Return procedure for SPP04N60C2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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