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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP15N60C3XKSA1

Name: SPP15N60C3XKSA1
Brand: Infineon Technologies
SKU: SPP15N60C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP15N60C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP15N60C3XKSA1.pdf

Description:: MOSFET N-CH 650V 15A TO220-3

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Product details

Overview

SPP15N60C3 from Infineon Technologies is a 600 V, 15 A CoolMOS™ C3 superjunction N-channel power MOSFET in PG-TO220 package, featuring R_DS(on) = 0.28 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 63 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial AC-DC converters operating up to 150°C junction temperature.

For engineers reviewing the SPP15N60C3 datasheet, SPP15N60C3 pinout, SPP15N60C3 application, or SPP15N60C3 equivalent, key selection criteria include its 50 V/ns dv/dt capability, 460 mJ single-pulse avalanche energy, 1660 pF input capacitance, and thermal resistance R_thJC = 0.8 K/W - critical for high-density, thermally constrained power designs.

Technical Context

This device implements Infineon's third-generation CoolMOS™ technology optimized for hard-switched and resonant topologies. Its low effective output capacitance (C_o(er) = 80 pF) and minimized reverse transfer capacitance (C_rss = 40 pF) reduce switching losses and improve EMI behavior in 65–100 kHz flyback and LLC converters.

The MOSFET integrates a robust body diode with t_rr = 460 ns and Q_rr = 27 µC, enabling reliable operation in synchronous rectification and bidirectional power flow applications where reverse recovery performance directly impacts efficiency and voltage overshoot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC-link systems with 50% safety margin for surge and ringing
R_DS(on)	0.28 Ω @ T_j = 25°C - enables <1.3 W conduction loss at 9.4 A continuous current
Q_g	63 nC - reduces gate drive power and allows use of smaller, lower-cost drivers
E_AS	460 mJ - withstands single-pulse inductive energy without failure in unclamped inductive switching
dv/dt rating	50 V/ns @ T_j = 125°C - ensures noise immunity and prevents spurious turn-on in high-speed switching
C_iss	1660 pF - defines gate-to-source + gate-to-drain capacitance affecting drive loop stability
R_thJC	0.8 K/W - enables 156 W power dissipation with modest heatsinking at T_C = 25°C

Pinout & Package

PG-TO220-3-31 package with fully isolated case (2500 V_AC, 1 min). Pin 1: Gate; Pin 2: Drain (tab); Pin 3: Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control terminal requiring low-inductance gate loop layout to suppress oscillation
Pin 2	Drain (Tab)	Main high-voltage power terminal; electrically connected to metal tab for thermal path and electrical isolation
Pin 3	Source	Reference node for gate drive and current sensing; tied to PCB ground plane for EMI control

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 63 nC - cuts gate drive losses by >30% vs. legacy 600 V MOSFETs at same R_DS(on)
Periodic avalanche rated	E_AR = 0.8 mJ - supports repetitive inductive switching in motor drives without derating
Extreme dv/dt immunity	50 V/ns - eliminates need for external snubbers in high-frequency PFC designs
Low effective output capacitance	C_o(er) = 80 pF - reduces turn-off energy loss and improves ZVS transition in resonant converters
Enhanced body diode	t_rr = 460 ns, Q_rr = 27 µC - lowers reverse recovery loss and voltage spike in bridge-leg configurations

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: 3 kW server power supply operating at 100 kHz with active clamp flyback topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC-link and delivering 15 A peak primary current.

Use Value: 0.28 Ω R_DS(on) and 63 nC Q_g reduce total switching + conduction loss to <2.1 W, enabling >95% efficiency at full load.

Use Scenario: Three-phase industrial PFC module with interleaved boost stages feeding 750 V DC bus.

IC Role / Device Role / Timing Role: Fast-switching boost switch rated for 600 V blocking and 15 A continuous current per phase.

Use Value: 50 V/ns dv/dt rating and 460 mJ E_AS ensure stable operation under line transients and short-circuit conditions without desaturation protection.

Solar Microinverter DC-DC Stage

EV Onboard Charger AC-DC Front End

Use Scenario: 300 W microinverter with two-stage conversion: MPPT boost followed by isolated DC-DC.

IC Role / Device Role / Timing Role: Primary-side switch in high-frequency (150 kHz) resonant LLC stage interfacing PV string to battery.

Use Value: Low C_o(er) = 80 pF and C_rss = 40 pF enable clean zero-voltage switching across 20–100% load range, reducing EMI filter size by 35%.

Use Scenario: 6.6 kW single-phase OBC using dual-phase interleaved PFC + phase-shifted full-bridge DC-DC.

IC Role / Device Role / Timing Role: High-reliability PFC switch operating continuously at T_j ≤ 135°C in sealed automotive enclosure.

Use Value: R_thJC = 0.8 K/W and 150°C max T_j rating allow direct mounting to chassis heatsink without thermal interface pads, simplifying mechanical design.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15NM60ND	R_DS(on) = 0.32 Ω, Q_g = 68 nC, no avalanche rating	Lacks periodic avalanche capability; requires external clamping in inductive loads	Lower cost but higher conduction loss and reduced ruggedness in unclamped circuits
IPP60R190C7	R_DS(on) = 0.19 Ω, Q_g = 52 nC, 650 V rating	Higher voltage margin and lower R_DS(on), but larger die area increases gate drive complexity	Better efficiency at high current, yet demands tighter gate loop layout due to faster switching

Compared with STP15NM60ND and IPP60R190C7, the SPP15N60C3 delivers optimal balance of ruggedness (E_AS, dv/dt), thermal performance (R_thJC), and drive simplicity (Q_g) for mid-power industrial SMPS where reliability and layout robustness outweigh marginal efficiency gains.

Availability

SPP15N60C3 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for SPP15N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability power conversion in 600–650 V applications, emphasizing low gate charge, enhanced avalanche ruggedness, and superior thermal performance over prior generations.

FAQ

What is the maximum continuous drain current for SPP15N60C3 at 100°C case temperature?

The maximum continuous drain current is 9.4 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case thermal resistance (0.8 K/W) and safe operating area limits at elevated temperatures.

Does SPP15N60C3 have an isolated package, and what is its isolation rating?

Yes - the PG-TO220-3-31 variant features a fully isolated package rated for 2500 V_AC for 1 minute between drain (tab) and source/gate terminals. This eliminates need for insulating hardware in heatsink-mounted configurations and simplifies creepage/clearance compliance.

How does the body diode performance compare to standard silicon MOSFETs?

The integrated body diode has t_rr = 460 ns and Q_rr = 27 µC at T_j = 25°C, significantly improved over first-gen superjunction MOSFETs. Its soft recovery characteristic minimizes voltage overshoot and EMI during commutation, making it suitable for half-bridge and synchronous rectifier use.

Can SPP15N60C3 be used in zero-voltage switching (ZVS) topologies?

Yes - its low effective output capacitance (C_o(er) = 80 pF) and controlled C_rss (40 pF) enable predictable resonant tank behavior in LLC and phase-shifted full-bridge converters. Verified ZVS operation is documented up to 150 kHz with 480 V V_DS and 15 A I_D.

SPP15N60C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 280mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 675µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1660 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP15N60C3XKSA1 FAQ

1.How can I place an order for SPP15N60C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP15N60C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP15N60C3XKSA1 reliable?

The price and inventory of SPP15N60C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP15N60C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPP15N60C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP15N60C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP15N60C3XKSA1?

SPP15N60C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP15N60C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP15N60C3XKSA1?

For technical support, including SPP15N60C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP15N60C3XKSA1 requirements.

6.How does Aetrix verify that SPP15N60C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP15N60C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP15N60C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPP15N60C3XKSA1?

All SPP15N60C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP15N60C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP15N60C3XKSA1 part is unused and in its original packaging.

Return procedure for SPP15N60C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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