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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP21N50C3XKSA1

Name: SPP21N50C3XKSA1
Brand: Infineon Technologies
SKU: SPP21N50C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP21N50C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP21N50C3XKSA1.pdf

Description:: MOSFET N-CH 500V 21A TO220-3

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Product details

Overview

SPP21N50C3 from Infineon Technologies is a 500 V, 21 A CoolMOS™ C3 superjunction power MOSFET in PG-TO220 package, featuring R_DS(on) = 0.19 Ω (T_j = 25°C), ultra-low gate charge (Q_g = 95 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial DC-DC converters operating up to 150°C junction temperature.

For engineers reviewing the SPP21N50C3 datasheet, SPP21N50C3 pinout, SPP21N50C3 application, or SPP21N50C3 equivalent, key selection criteria include its 500 V V_(BR)DSS, 690 mJ single-pulse avalanche energy, 50 V/ns dv/dt capability at T_j = 125°C, and thermal resistance R_thJC = 0.6 K/W - critical for high-power, high-reliability switching designs.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, optimized for hard-switched and resonant topologies requiring low conduction and switching losses. Its design integrates ultra-low effective output capacitance (C_o(er) = 87 pF at 400 V) and high transconductance (g_fs = 18 S), enabling fast turn-on/turn-off with minimal gate drive energy.

The MOSFET supports both high-side and low-side configurations with identical avalanche robustness (E_AS = 690 mJ, I_D = 10 A, V_DD = 50 V) and reverse diode recovery parameters (t_rr = 450 ns, Q_rr = 9 µC), making it suitable for continuous conduction mode (CCM) PFC and LLC resonant converter primary switches.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	500 V - Withstands 500 V drain-source breakdown at T_j = 25°C; derates to ~470 V at 150°C, enabling 400 V bus operation with margin.
R_DS(on)	0.19 Ω - Low on-resistance at V_GS = 10 V and T_j = 25°C; rises to 0.54 Ω at 150°C, defining conduction loss envelope.
Q_g	95 nC - Total gate charge determines driver strength requirement and switching loss; enables efficient operation at 100–300 kHz.
E_AS	690 mJ - Single-pulse avalanche energy rating ensures ruggedness during transient overvoltage events without external snubbers.
t_r/t_f	5 ns / 4.5 ns - Fast rise/fall times reduce switching transition losses and EMI generation in high-frequency converters.
R_thJC	0.6 K/W - Junction-to-case thermal resistance enables 208 W power dissipation at T_C = 25°C with adequate heatsinking.
V_SD	1.0–1.2 V - Body diode forward voltage at I_F = I_S = 21 A; impacts synchronous rectification and freewheeling losses.

Pinout & Package

PG-TO220 package: three-terminal through-hole mounting with isolated tab (drain-connected), standard footprint compatible with manual soldering and wave-soldering per JEDEC J-STD-020 (T_sold = 260°C for 10 s).

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal	Reference node for gate drive; connects to power ground or low-side return path; carries full load current.
2 (Drain)	Drain terminal	High-voltage switching node; electrically connected to metal tab; requires isolation from heatsink unless grounded.
3 (Gate)	Control input	High-impedance MOS gate; requires low-inductance routing and 10–15 V drive for full enhancement; sensitive to ESD.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 95 nC enables reduced gate driver power and faster switching with lower EMI.
Periodic avalanche rated	Repetitive avalanche current I_AR = 21 A supports reliable operation under inductive switching stress without derating.
Extreme dv/dt rated	50 V/ns at T_j = 125°C ensures immunity to false triggering in noisy high-dV/dt environments like motor drives.
Low effective output capacitance	C_o(er) = 87 pF (energy-related) reduces stored energy loss during hard switching transitions.
Improved transconductance	g_fs = 18 S delivers strong current drive capability and stable gain across temperature.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-efficiency 80 PLUS Titanium server power supplies operating at 100–300 kHz with 380–400 V DC bus.

IC Role / Device Role / Timing Role: Primary-side hard-switched MOSFET in LLC resonant half-bridge; handles full AC-DC conversion power.

Use Value: 0.19 Ω R_DS(on) and 95 nC Q_g minimize conduction + switching losses, enabling >96% efficiency at full load.

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in factory automation power modules.

IC Role / Device Role / Timing Role: High-voltage switch controlling inductor current to shape input current waveform.

Use Value: 690 mJ E_AS and 50 V/ns dv/dt rating ensure robustness against line surges and inductive kickback.

Solar Inverter DC-Link Switch

EV Onboard Charger Primary

Use Scenario: DC-link switching in string inverters with 600 V nominal bus voltage and partial shading transients.

IC Role / Device Role / Timing Role: High-side switch in two-level inverter bridge; subjected to repetitive avalanche during fault conditions.

Use Value: Periodic avalanche rating (I_AR = 21 A) allows safe operation during grid faults without external clamping.

Use Scenario: Primary-side switch in 6.6 kW bidirectional OBCs converting AC to 400 V DC battery bus.

IC Role / Device Role / Timing Role: Main switching element in dual-active-bridge (DAB) or phase-shifted full-bridge topology.

Use Value: R_thJC = 0.6 K/W and T_jmax = 150°C support compact thermal design under sustained 21 A conduction.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP22NM50N	R_DS(on) = 0.22 Ω, Q_g = 110 nC, E_AS = 520 mJ, TO-220 package	Higher conduction and switching losses; lower avalanche ruggedness	Acceptable for cost-sensitive 65–100 kHz SMPS where efficiency margin is relaxed.
IPP60R190C7	R_DS(on) = 0.19 Ω, Q_g = 82 nC, E_AS = 540 mJ, TO-220 package, 600 V rating	Lower gate charge but reduced avalanche energy; higher V_(BR)DSS increases voltage margin	Better for 600 V bus systems needing lower drive loss; less suited for repetitive avalanche stress.

Compared with STP22NM50N and IPP60R190C7, SPP21N50C3 offers superior balance of low R_DS(on), high E_AS, and extreme dv/dt immunity - making it optimal for high-reliability, high-frequency industrial and renewable energy converters where ruggedness and efficiency are jointly critical.

Availability

SPP21N50C3 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar inverters, and EV onboard chargers requiring stable component supply and long-term production continuity.

Supply support for SPP21N50C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability power conversion in telecom, server, industrial, and renewable energy applications - engineered for low-loss switching and rugged operation in demanding thermal and electrical environments.

FAQ

What is the maximum continuous drain current for SPP21N50C3 at 100°C case temperature?

The maximum continuous drain current is 13.1 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case thermal resistance (R_thJC = 0.6 K/W) and internal power dissipation limits. Operation above this current requires active cooling or reduced duty cycle to maintain T_j ≤ 150°C.

Does SPP21N50C3 have an integrated body diode, and what are its key recovery characteristics?

Yes, SPP21N50C3 includes a monolithic body diode with I_S = 21 A continuous forward current and t_rr = 450 ns at V_R = 380 V, I_F = 21 A, and di_F/dt = 100 A/µs. Its Q_rr = 9 µC and I_rrm = 60 A define soft recovery behavior, reducing voltage overshoot and EMI in hard-commutated circuits.

Can SPP21N50C3 be used in high-side switching configurations?

Yes - SPP21N50C3 is fully rated for high-side use, with identical avalanche and dv/dt performance in both high-side and low-side roles. Its gate threshold voltage (V_GS(th) = 2.1–3.9 V) and ±20 V gate-source rating support standard bootstrap gate drivers, and its 50 V/ns dv/dt immunity prevents spurious turn-on during fast voltage transitions.

What is the recommended gate resistor value for optimal switching performance?

A gate resistor of 3.6 Ω is used in the datasheet's switching time test conditions (V_DD = 380 V, I_D = 21 A), yielding t_d(on) = 10 ns and t_d(off) = 67 ns. For most 100–250 kHz applications, 2.2–4.7 Ω balances switching speed, gate driver stress, and EMI; values below 2 Ω require careful layout to avoid ringing.

SPP21N50C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 190mOhm @ 13.1A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 1mA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 208W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP21N50C3XKSA1 FAQ

1.How can I place an order for SPP21N50C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP21N50C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP21N50C3XKSA1 reliable?

The price and inventory of SPP21N50C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP21N50C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPP21N50C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP21N50C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP21N50C3XKSA1?

SPP21N50C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP21N50C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP21N50C3XKSA1?

For technical support, including SPP21N50C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP21N50C3XKSA1 requirements.

6.How does Aetrix verify that SPP21N50C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP21N50C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP21N50C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPP21N50C3XKSA1?

All SPP21N50C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP21N50C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP21N50C3XKSA1 part is unused and in its original packaging.

Return procedure for SPP21N50C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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