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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP24N60C3XKSA1

Name: SPP24N60C3XKSA1
Brand: Infineon Technologies
SKU: SPP24N60C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP24N60C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP24N60C3XKSA1.pdf

Description:: MOSFET N-CH 650V 24.3A TO220-3

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Product details

Overview

SPP24N60C3 from Infineon Technologies is a 600 V, 24.3 A CoolMOS™ C3 superjunction power MOSFET in PG-TO220-3-1 package, optimized for high-efficiency hard-switched and resonant SMPS topologies including PFC, LLC, and server/telecom PSUs. It features R_DS(on) = 0.16 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 104.9 nC), and periodic avalanche rating up to 780 mJ.

For engineers reviewing the SPP24N60C3 datasheet, SPP24N60C3 pinout, SPP24N60C3 application, or SPP24N60C3 equivalent, key selection criteria include its 600 V V_DS, 0.16 Ω R_DS(on), 104.9 nC total gate charge, 3000 pF input capacitance, and 50 V/ns dv/dt capability under hard switching at T_j = 125°C.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, featuring optimized cell pitch and charge compensation for reduced conduction and switching losses. Its low effective output capacitance (C_o(er) = 141 pF) and ultra-low Q_gd/Q_gs ratio support high-frequency ZVS/ZCS operation in resonant converters.

The MOSFET integrates a robust body diode with t_rr = 600 ns and Q_rr = 13 µC at V_R = 480 V, enabling reliable synchronous rectification and bidirectional current handling in bridge configurations without external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC-link systems with 50% safety margin for transient overvoltage
R_DS(on)	0.16 Ω @ T_j = 25°C - enables <1.5 W conduction loss at 15.4 A continuous drain current
I_D cont	24.3 A @ T_C = 25°C - suitable for 500–800 W power stages with standard heatsinking
Q_g	104.9 nC - reduces gate driver power demand and enables efficient 100–300 kHz operation
E_AS	780 mJ - provides single-pulse avalanche ruggedness for unclamped inductive switching events
C_iss	3000 pF - balances switching speed and EMI control in high-frequency hard-switched designs
dv/dt rating	50 V/ns @ T_j = 125°C - ensures noise-immune operation in fast-rising edge environments

Pinout & Package

Package: PG-TO220-3-1 - through-hole, isolated tab, 3-terminal configuration with drain-connected metal tab for direct heatsink mounting and thermal resistance R_thJC = 0.52 K/W.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, high-side switch node	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
Source	Reference node for gate drive and current sensing	Low-inductance return path; critical for stable gate control and accurate shunt-based sensing
Gate	Control terminal for channel modulation	High-impedance input requiring <10 Ω series resistance to damp ringing and prevent oscillation

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 104.9 nC enables <1 W gate driver loss at 200 kHz with 12 V drive
Periodic avalanche rated	Supports repetitive I_AR = 24.3 A pulses without degradation-critical for PFC boost inrush and overload
Extreme dv/dt immunity	50 V/ns rating at 125°C eliminates false turn-on in high-noise half-bridge leg layouts
Low effective output capacitance	C_o(er) = 141 pF reduces turn-off energy loss by ~35% vs. legacy 600 V MOSFETs
Enhanced body diode	t_rr = 600 ns and soft recovery reduce EMI and voltage overshoot in freewheeling paths

Applications

Server Power Supply

Industrial AC-DC Converter

Use Scenario: Primary-side switch in 800 W telecom rectifier with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch operating at 150 kHz with 400 V DC bus and 12 V gate drive.

Use Value: 0.16 Ω R_DS(on) and 104.9 nC Q_g achieve >95% efficiency at full load while maintaining <85°C case temperature.

Use Scenario: PFC boost switch in 1 kW industrial motor drive front-end.

IC Role / Device Role / Timing Role: Continuous conduction mode (CCM) boost switch with 50 kHz switching and 650 V peak bus voltage.

Use Value: 600 V V_DS rating and 780 mJ E_AS withstand line surges and inductive kickback during fault conditions.

LLC Resonant Converter

UPS Inverter Stage

Use Scenario: Half-bridge primary switch in 1.2 kW datacenter LLC PSU with ZVS operation.

IC Role / Device Role / Timing Role: Low-loss switching element with zero-voltage turn-on enabled by C_o(er) = 141 pF and low Q_gd.

Use Value: Reduced turn-off loss and soft body diode recovery minimize dead-time losses and improve light-load efficiency.

Use Scenario: H-bridge output stage in 2 kVA online UPS with bidirectional energy flow.

IC Role / Device Role / Timing Role: Bidirectional switch supporting regeneration; body diode conducts reverse current during inverter-to-rectifier transition.

Use Value: 24.3 A I_S and 600 ns t_rr ensure low conduction loss and minimal voltage spike during commutation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24N60M2	R_DS(on) = 0.17 Ω, Q_g = 110 nC, no specified E_AS rating	Lacks documented periodic avalanche capability; less suited for unclamped inductive loads	Prefer for cost-sensitive non-avalanche-critical SMPS where gate drive margin is available
IPP60R190C7	650 V rating, R_DS(on) = 0.19 Ω, Q_g = 92 nC, lower C_iss (2500 pF)	Better high-frequency performance but higher conduction loss at 24 A	Prefer for >300 kHz resonant designs where switching loss dominates over conduction loss

Compared with STP24N60M2 and IPP60R190C7, the SPP24N60C3 delivers superior avalanche ruggedness and lowest R_DS(on) in the 600 V class, making it optimal for high-reliability, medium-frequency (100–200 kHz) industrial and server power stages where both conduction efficiency and transient robustness are critical.

Availability

SPP24N60C3 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC converters, and UPS inverter stages requiring stable component supply and long-term lifecycle assurance.

Supply support for SPP24N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D infrastructure.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability switched-mode power supplies in datacenter, telecom, and industrial equipment, emphasizing low R_DS(on), low gate charge, and rugged avalanche performance.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPP24N60C3 supports 15.4 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 package and must be verified against actual heatsink design using R_thJC = 0.52 K/W and ambient conditions.

Does this MOSFET require a negative gate turn-off voltage?

No. The SPP24N60C3 has a gate threshold voltage V_GS(th) of 2.1–3.9 V and is fully enhanced with +10 V gate drive. A negative turn-off voltage is not required; however, a small negative bias (e.g., –2 V) may improve noise immunity in high-dv/dt environments.

Can the body diode be used for synchronous rectification?

Yes-the integrated body diode is rated for 24.3 A continuous forward current and exhibits soft reverse recovery (t_rr = 600 ns, Q_rr = 13 µC). It is suitable for synchronous rectification in low-frequency (<100 kHz) topologies but not recommended for high-frequency ZVS designs where discrete Schottky diodes offer lower loss.

What is the safe operating area (SOA) limitation at DC operation?

At DC, the SOA is limited by thermal constraints: maximum I_D = 24.3 A only at T_C = 25°C. At T_C = 100°C, the DC SOA restricts I_D to approximately 10 A due to R_DS(on) increase and junction temperature rise-see Figure 2 on page 5 of the datasheet for full SOA curves.

SPP24N60C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 240W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

SPP24N60C3XKSA1 FAQ

1.How can I place an order for SPP24N60C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP24N60C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP24N60C3XKSA1 reliable?

The price and inventory of SPP24N60C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP24N60C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPP24N60C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP24N60C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP24N60C3XKSA1?

SPP24N60C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP24N60C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP24N60C3XKSA1?

For technical support, including SPP24N60C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP24N60C3XKSA1 requirements.

6.How does Aetrix verify that SPP24N60C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP24N60C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP24N60C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPP24N60C3XKSA1?

All SPP24N60C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP24N60C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP24N60C3XKSA1 part is unused and in its original packaging.

Return procedure for SPP24N60C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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