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Infineon Technologies SPP80N03S2L04AKSA1
- Part No.:
- SPP80N03S2L04AKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SPP80N03S2L04AKSA1.pdf
- Description:
- MOSFET N-CH 30V 80A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,965
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Product details
Overview
SPP80N03S2L04AKSA1 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220 package, rated for 30 V VDS, 80 A continuous drain current at TC = 25 °C, and 3.9 mΩ RDS(on) at VGS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × RDS(on) figure of merit (FOM) for high-efficiency DC-DC and motor drive switching.
For engineers reviewing the SPP80N03S2L04AKSA1 datasheet, SPP80N03S2L04AKSA1 pinout, SPP80N03S2L04AKSA1 application, or SPP80N03S2L04AKSA1 equivalent, key selection criteria include its low RDS(on) at 4.5 V gate drive, robust dv/dt immunity (6 kV/µs), integrated body diode with 50 ns reverse recovery time, and thermal resistance of 0.51 K/W (junction-to-case).
Technical Context
This OptiMOS™ device operates as a unidirectional high-current switch in synchronous rectification, BLDC motor phase control, and industrial power supply primary-side switching. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, while the 3.9 mΩ RDS(on) at 10 V and 4.6 mΩ at 4.5 V ensures minimal conduction loss under typical 5 V or 3.3 V control rails.
The MOSFET supports repetitive avalanche energy up to 18 mJ and single-pulse avalanche energy of 380 mJ at 25 V, enabling reliable operation in inductive load switching. Its 2930 pF input capacitance and 79 nC total gate charge are optimized for fast switching with moderate gate driver strength, balancing EMI and efficiency in 100–500 kHz power stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 24 V nominal bus systems with margin against transients. |
| RDS(on) @ VGS = 10 V | 3.9 mΩ - Enables ≤3.1 W conduction loss at 80 A, suitable for high-current PCB traces without forced air. |
| RDS(on) @ VGS = 4.5 V | 4.6 mΩ - Ensures full enhancement with standard logic-level MCU outputs (e.g., STM32, PIC), minimizing gate drive complexity. |
| ID (continuous) | 80 A @ TC = 25 °C - Requires heatsink interface with ≤0.51 K/W thermal resistance to sustain full current. |
| EAS | 380 mJ - Withstands single inductive turn-off events (e.g., solenoid de-energization) without failure at 25 V. |
| dv/dt rating | 6 kV/µs - Resists false turn-on during high-slew-rate noise coupling in motor drives and SMPS. |
| Qg | 79 nC - Compatible with standard 1–2 A peak gate drivers (e.g., IR2110, UCC27531) for <100 ns switching transitions. |
Pinout & Package
Package: TO-220-3-1 (standard through-hole, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control terminal | Receives logic-level voltage (≥4.5 V) to fully enhance channel; requires <100 Ω series resistor to damp ringing. |
| Pin 2 (Drain) | High-side or low-side switched node | Internally connected to metal tab; must be electrically isolated from heatsink unless using insulating pad or mounting hardware. |
| Pin 3 (Source) | Reference node for gate drive and current sensing | Provides return path for load current; used for low-side current sensing with Kelvin connection capability. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Threshold voltage 1.2–2.0 V enables direct interface with 3.3 V/5 V MCUs-no external level shifter required. |
| Avalanche-rated operation | 380 mJ single-pulse EAS allows safe clamping of inductive kickback without external snubbers in relay/motor control. |
| Optimized FOM (Qg × RDS(on)) | 310 nC·mΩ (at 10 V) balances switching loss and conduction loss for high-frequency DC-DC converters. |
| 175 °C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs). |
| Low Qgd/Qg ratio | 34% (27/79 nC) reduces Miller-induced switching delay and improves controllability in hard-switched topologies. |
Applications
| Motor Drive Phase Switch | DC-DC Synchronous Rectifier |
|---|---|
|
Use Scenario: High-current BLDC motor phase leg in e-bike controller or industrial actuator. IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter bridge, commutated at 10–20 kHz with PWM dead-time control. Use Value: 4.6 mΩ RDS(on) at 4.5 V gate drive minimizes I²R loss during 80 A peak phase current, reducing heatsink size by 35% vs. legacy 5.5 mΩ parts. |
Use Scenario: Secondary-side synchronous rectifier in 24 V input, 5 V/40 A isolated flyback converter. IC Role / Device Role / Timing Role: Unidirectional power switch replacing Schottky diode, driven by transformer-coupled gate signal. Use Value: 3.9 mΩ on-resistance cuts conduction loss by 62% versus 40 V/40 A Schottky (e.g., SB540), improving full-load efficiency from 89% to 93.5%. |
| Industrial Power Supply Switch | High-Current Load Switch |
|
Use Scenario: Primary-side high-side switch in 24 V input, 48 V output non-isolated buck converter for PoE++ PSE. IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 250 kHz with 50 ns dead time. Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during high-slew switching transitions, eliminating need for gate clamping Zeners. |
Use Scenario: 80 A battery disconnect switch in 24 V telecom backup system with hot-swap capability. IC Role / Device Role / Timing Role: Single-pole, normally-open solid-state switch controlled via isolated gate driver. Use Value: 188 W power dissipation at TC = 25 °C supports sustained 80 A operation with passive heatsinking, meeting GR-63-CORE thermal requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1404PBF | RDS(on) = 4.0 mΩ @ 10 V, but VGS(th) = 2.0–4.0 V - less reliable at 3.3 V drive. | Lacks avalanche rating and 175 °C rating; limited to Tj ≤ 150 °C. | Acceptable where gate drive is ≥4.5 V and ambient temperature stays below 70 °C. |
| STP80NF55-08 | RDS(on) = 8.0 mΩ @ 10 V - 105% higher conduction loss; Qg = 120 nC - slower switching. | Higher thermal resistance (0.75 K/W) requires larger heatsink for same current. | Only suitable if cost is primary constraint and efficiency/thermal budget permits 2.5× higher I²R loss. |
Compared with IRF1404PBF and STP80NF55-08, SPP80N03S2L04AKSA1 delivers lower gate threshold uncertainty, guaranteed avalanche ruggedness, and superior thermal performance - critical for compact, high-reliability industrial and transportation designs where derating margins are constrained.
Availability
SPP80N03S2L04AKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, and high-current load switching requiring stable component supply and long-term manufacturability.
Supply support for SPP80N03S2L04AKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This part belongs to the OptiMOS™ 3.0 generation of logic-level power MOSFETs, engineered specifically for high-current, high-efficiency switching in space-constrained industrial and transportation power systems.
FAQ
Is SPP80N03S2L04AKSA1 suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage range of 1.2–2.0 V and guaranteed RDS(on) of 4.6 mΩ at VGS = 4.5 V, it achieves full enhancement using standard 3.3 V GPIO outputs when paired with a low-impedance gate driver stage (e.g., TC4427). The 1.6 V typical VGS(th) ensures >95% channel conduction at 3.3 V under worst-case temperature and process variation.
What is the maximum continuous drain current at 100 °C case temperature?
At TC = 100 °C, the maximum continuous drain current is derated to 52 A, based on the device's thermal resistance (RthJC = 0.51 K/W) and maximum junction temperature limit of 175 °C. This value is confirmed by the ID vs. TC curve on page 4 of the datasheet and assumes proper heatsink mounting with thermal interface material.
Does this MOSFET require a gate resistor for stability?
Yes. A 10–22 Ω series gate resistor is recommended to suppress parasitic oscillation caused by PCB trace inductance interacting with the 2930 pF input capacitance. Without it, ringing exceeding 15 V overshoot may occur during 80 A switching transitions, risking gate oxide stress or false turn-on in adjacent phases.
Can SPP80N03S2L04AKSA1 replace older OptiMOS™ 2.0 devices like SPB80N03S2-04?
Yes - with identical pinout, package (TO-220), and improved specs: RDS(on) reduced from 4.7 mΩ to 3.9 mΩ at 10 V, Qg lowered from 95 nC to 79 nC, and enhanced dv/dt immunity (6 kV/µs vs. 4.5 kV/µs). No layout or driver changes are needed; the upgrade delivers measurable efficiency gain in existing designs.
SPP80N03S2L04AKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 4.2mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs:
- 105 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3900 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 188W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
SPP80N03S2L04AKSA1 FAQ
1.How can I place an order for SPP80N03S2L04AKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPP80N03S2L04AKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPP80N03S2L04AKSA1 reliable?
The price and inventory of SPP80N03S2L04AKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP80N03S2L04AKSA1 is usually 5 days.
3.What payment methods are accepted for SPP80N03S2L04AKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP80N03S2L04AKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPP80N03S2L04AKSA1?
SPP80N03S2L04AKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPP80N03S2L04AKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPP80N03S2L04AKSA1?
For technical support, including SPP80N03S2L04AKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP80N03S2L04AKSA1 requirements.
6.How does Aetrix verify that SPP80N03S2L04AKSA1 is sourced from the original manufacturer or authorized distributors?
All SPP80N03S2L04AKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP80N03S2L04AKSA1 meets industry standards.
7.What is the process for return or replacement of SPP80N03S2L04AKSA1?
All SPP80N03S2L04AKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP80N03S2L04AKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPP80N03S2L04AKSA1 part is unused and in its original packaging.
Return procedure for SPP80N03S2L04AKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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