Infineon Technologies SPS01N60C3BKMA1

Overview

SPS01N60C3BKMA1 from Infineon Technologies is a 600 V, 0.8 A Cool MOS™ N-channel power transistor in PG-TO251-3-11 package, featuring 6 Ω R_DS(on) at 10 V_GS, ultra-low gate charge (3.9 nC typ), and periodic avalanche rating. It serves as a high-voltage, low-current switching device in offline SMPS auxiliary supplies, LED drivers, and small AC/DC adapters.

For engineers reviewing the SPS01N60C3BKMA1 datasheet, SPS01N60C3BKMA1 pinout, SPS01N60C3BKMA1 application, or SPS01N60C3BKMA1 equivalent, key selection criteria include its 50 V/ns dv/dt capability, 20 mJ single-pulse avalanche energy, 11 K/W junction-to-case thermal resistance, and body diode reverse recovery time (570–970 ns) under 350 V, 100 A/µs conditions.

Technical Context

This Cool MOS™ device employs superjunction technology optimized for high-voltage, low-power-consumption applications. Its gate threshold voltage (2.1–3.9 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers, while ultra-low C_iss (100 pF typ) and C_rss (2.5 pF typ) minimize switching losses in high-frequency operation.

The transistor supports both hard-switched and quasi-resonant topologies due to extreme dv/dt immunity (50 V/ns at T_j = 125 °C) and robust periodic avalanche capability (I_AR = 0.8 A, E_AR = 0.01 mJ). Its integrated body diode exhibits V_SD = 1.0–1.2 V at I_S = 0.8 A and t_rr = 570–970 ns, suitable for non-synchronous flyback and buck-derived converters.

Key Specifications

Pinout & Package

SPS01N60C3BKMA1 is housed in PG-TO251-3-11, a surface-mount variant of TO-251 with gull-wing leads and isolated drain pad. The package features a thermally enhanced leadframe for efficient heat transfer to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, low-current switching applications.

Compared with STP1NK60ZFP and IPP60R190C6, SPS01N60C3BKMA1 delivers optimal balance of low gate charge, adequate avalanche ruggedness, and surface-mount thermal efficiency for sub-1 A, high-voltage switching-without over-engineering or compromising SOA margins.

Availability

SPS01N60C3BKMA1 is available at Aetrix Electronics and suitable for AC/DC auxiliary power supplies, LED drivers, smart meter power modules, and industrial sensor interface PSUs requiring stable component supply and long-term industrial lifecycle support.

Supply support for SPS01N60C3BKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

SPS01N60C3BKMA1 belongs to the Cool MOS™ C3 family, designed specifically for high-efficiency, low-power-consumption offline SMPS in consumer, industrial, and metering applications where thermal density and standby loss are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current (I_D) is 0.5 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated temperatures-designers must ensure heatsinking maintains T_C ≤ 100 °C for sustained 0.5 A operation.

Does SPS01N60C3BKMA1 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic body diode with I_S = 0.8 A continuous, I_SM = 1.6 A pulsed, V_SD = 1.0–1.2 V at I_S = 0.8 A, and t_rr = 570–970 ns under 350 V, 100 A/µs conditions. These values are measured per JEDEC JESD24-11 and enable use in non-synchronous topologies without external diodes.

Can this MOSFET be driven directly from a 3.3 V microcontroller GPIO?

No-its gate threshold voltage (V_GS(th)) ranges from 2.1 V to 3.9 V, and full enhancement requires V_GS ≥ 10 V for R_DS(on) ≤ 6 Ω. A 3.3 V drive yields high R_DS(on) (>20 Ω) and excessive conduction loss; a dedicated gate driver or level-shifter is required for reliable switching.

What is the safe operating area (SOA) limitation at DC and short pulses?

The DC SOA is defined by P_tot = 11 W at T_C = 25 °C, limiting V_DS × I_D ≤ 11 W. For pulse widths ≤ 1 ms, the SOA expands significantly-e.g., at t_p = 10 µs, it supports up to 2.5 A at 10 V_DS-as shown in Figure 2 of the datasheet, constrained by peak junction temperature and avalanche limits.