Infineon Technologies SPS02N60C3BKMA1

Overview

SPS02N60C3BKMA1 from Infineon Technologies is a 600 V, 2.3 A N-channel CoolMOS™ C3 power MOSFET in TO-220AB package, featuring R_DS(on) = 3.5 Ω (typ. @ T_j = 25 °C), ultra-low gate charge (Q_G = 11 nC), and 15 V/ns dv/dt ruggedness. It serves as a high-voltage switching element in offline SMPS primary-side circuits.

For engineers reviewing the SPS02N60C3BKMA1 datasheet, SPS02N60C3BKMA1 pinout, SPS02N60C3BKMA1 application, or SPS02N60C3BKMA1 equivalent, key selection criteria include avalanche-rated operation (E_AS = 480 mJ), low effective output capacitance (C_oss,er = 30 pF), and thermal resistance R_thJC = 1.2 K/W for conduction- and switching-loss-sensitive designs.

Technical Context

This device implements Infineon's 3rd-generation CoolMOS™ superjunction architecture optimized for hard-switched 600 V applications. It delivers improved E_off vs. R_DS(on) trade-off over C2 generation, with fixed gate plateau voltage of 5.5 V and transconductance g_fs = 2.5 S (min).

Its body diode exhibits t_rr = 270 ns and Q_rr = 1.2 µC under V_DD = 400 V, I_F = 2.3 A, di/dt = 100 A/µs conditions - enabling reliable low-side synchronous rectification and ZVS-capable half-bridge operation.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (drain-connected), 3-pin through-hole mounting. Standard lead form with 2.54 mm pitch, RoHS-compliant, halogen-free mold compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with IPD60R360C3 and STP2NK60Z, SPS02N60C3BKMA1 offers optimal balance of low gate charge, qualified avalanche robustness, and thermal efficiency for 2–3 A 600 V SMPS - making it preferred for compact, high-reliability offline power supplies.

Availability

SPS02N60C3BKMA1 is available at Aetrix Electronics and suitable for offline AC/DC adapters, LED driver power stages, and industrial SMPS modules requiring stable component supply and long-term lifecycle support.

Supply support for SPS02N60C3BKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C3 product line, engineered specifically for high-efficiency, high-reliability 600 V hard-switched and resonant power conversion systems.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The maximum continuous drain current I_D is 2.3 A at case temperature T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value assumes proper heatsinking and accounts for R_DS(on) increase with junction temperature, ensuring safe operation within thermal limits.

Is SPS02N60C3BKMA1 suitable for use in a ZVS LLC resonant converter?

Yes - its low effective output capacitance (C_oss,er = 30 pF), low Q_G (11 nC), and fast body diode (t_rr = 270 ns) make it well-suited for ZVS operation in LLC converters up to 300 kHz. The device's dv/dt rating of 15 V/ns also supports clean zero-voltage turn-on under high-frequency resonant conditions.

Does this MOSFET have an integrated ESD protection diode on the gate?

No - SPS02N60C3BKMA1 does not integrate gate ESD protection. Its gate oxide is rated for ±20 V static voltage (V_GS), and external gate protection (e.g., 12 V Zener clamp) is recommended during handling and PCB assembly to prevent electrostatic damage.

How does the avalanche energy rating affect design margin in flyback converters?

With E_AS = 480 mJ, the device can absorb single-pulse inductive energy from leakage inductance without failure. In a 36 W flyback, this provides ≥2× margin over typical reflected spike energy (~200 mJ), eliminating need for TVS clamps and simplifying primary-side protection design.