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STMicroelectronics SPT01-335DEE
- Part No.:
- SPT01-335DEE
- Manufacturer:
- STMicroelectronics
- Category:
- TVS Diodes
- Package:
- 6-VQFN Exposed Pad
- Datasheet:
-
SPT01-335DEE.pdf
- Description:
- TVS DIODE 33VWM 46VC 6+3-QFN
- Quantity:
- Payment:
- Shipping:
Inventory:4,361
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Product details
Overview
SPT01-335DEE from STMicroelectronics is a triple-diode array transient voltage suppressor designed for 24 V industrial proximity sensor protection. It provides integrated reverse polarity blocking (D3), power bus overvoltage clamping (D1), and sensor switch protection (D2) in a single QFN3x3-6L package. Confirmed parameters include 36 V stand-off voltage, 38 V min. breakdown, 46 V max. clamping at 2 A (8/20 μs), 300 mA continuous forward current, and -40 °C to +100 °C operating ambient range - deployed in factory automation sensor interfaces compliant with EN 60947-5-2.
For engineers reviewing the SPT01-335DEE datasheet, SPT01-335DEE pinout, SPT01-335DEE application, or SPT01-335DEE equivalent, this device serves as a compact, standards-compliant solution for PNP/NPN 3-wire sensor interface protection requiring IEC 61000-4-2 (±15 kV air), IEC 61000-4-4 (±2 kV), and IEC 61000-4-5 (±1 kV) immunity - with validated thermal performance up to 175 °C junction temperature.
Technical Context
The SPT01-335DEE implements three functionally distinct diodes in one monolithic QFN package: D1 (power bus clamping, cathode at LS, anode at HS) handles inductive demagnetization energy up to 60 mJ; D2 (switch protection, cathode at V+, anode at V−) operates in pulse mode only; D3 (reverse blocking, cathode at K, anode at A) sustains 300 mA DC with 1 V forward drop. All diodes share common thermal path via exposed pad.
Its flexible terminal mapping supports both PNP high-side (HS→VCC, LS→sensor S+, A→GND) and NPN low-side (LS→GND, HS→sensor S−, K→VCC) configurations per Table 6. The device meets IEC 61131-2 Type 1/2/3 logic input interface requirements and achieves 330 °C/W junction-to-ambient thermal resistance on FR4 with 0.85 mm² copper area.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Stand-off Voltage | 36 V - maximum continuous reverse voltage before leakage exceeds 0.2 µA; defines safe operating margin below 38 V breakdown. |
| Breakdown Voltage VBR | Min. 38 V at 1 mA - ensures reliable triggering during transients while avoiding false trips under normal 24 V operation. |
| Clamping Voltage VCL | Max. 46 V at 2 A, 8/20 µs - limits peak voltage seen by downstream logic during surge events per IEC 61000-4-5. |
| Forward Current IF | 300 mA continuous - supports direct switching of standard 3-wire proximity sensors without external series resistors. |
| ESD Rating | ±15 kV air / ±8 kV contact per IEC 61000-4-2 - protects sensor inputs against human-body-model discharge events. |
| Surge Immunity | ±1 kV per IEC 61000-4-5 (RCC = 500 Ω) - withstands lightning-induced surges on industrial field wiring. |
| Ambient Temperature Range | -40 °C to +100 °C - enables deployment in uncontrolled factory environments including near motors or enclosures. |
Pinout & Package
QFN3x3-6L package (3.00 mm × 3.00 mm × 1.00 mm height) with exposed thermal pad aligned to pins 1/6 (LS), 2/5 (V+), and 3/4 (K). Pin 1 marked by index area; no internal die bonding wire; RoHS-compliant lead-free finish per ECOPACK®.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| LS | D1 cathode (power bus clamping) | Connected to sensor load return or ground side; sinks inductive kickback energy into PCB copper pour. |
| HS | D1 anode (power bus clamping) | Connected to VCC supply rail; forms primary clamping path for overvoltage on 24 V bus. |
| V+ | D2 cathode (switch protection) | Connected to sensor output (S+) in PNP config; clamps positive transients on switched line. |
| V− | D2 anode (switch protection) | Connected to sensor common (S−) or GND; completes D2 path for negative-going transients. |
| K | D3 cathode (reverse blocking) | Connected to VCC in NPN config; blocks reverse current if supply polarity is inverted. |
| A | D3 anode (reverse blocking) | Connected to sensor supply input; conducts forward current while blocking reverse faults. |
Key Features
| Feature | Design Value |
|---|---|
| Triple-diode integration | Single-component replacement for discrete D1/D2/D3 protection networks - reduces BOM count and PCB footprint by >60% vs. 3-SOD-323 solution. |
| Configurable sensor interface | Terminal mapping supports both PNP high-side and NPN low-side topologies without redesign - eliminates need for separate part numbers. |
| High-energy clamping | D1 withstands 60 mJ repetitive avalanche energy (L = 1 H, I = 0.3 A, RS = 100 Ω) - protects against sustained inductive demagnetization stress. |
| Low forward drop | D3 exhibits 1 V @ 300 mA - minimizes voltage loss in reverse-blocking path, preserving sensor supply headroom. |
| Thermal robustness | Zth(j-a) = 20 °C/W at tp = 15 ms - enables short-pulse power dissipation up to 100 W without exceeding 175 °C junction limit. |
Applications
| Proximity Sensor Interface Protection | Factory Automation Power Bus Protection |
|---|---|
|
Use Scenario: Protecting 3-wire inductive proximity sensors connected to PLC digital inputs in metal stamping lines. IC Role / Device Role / Timing Role: D2 clamps switching transients on sensor output line; D1 suppresses bus overvoltage from motor drive coupling; D3 blocks reverse polarity during maintenance hot-swap. Use Value: Eliminates field failures caused by ESD events (±15 kV air) and 8/20 µs surges (±1 kV), extending mean time between failures beyond 10 years per AN1351 lifetime model. |
Use Scenario: Securing 24 V DC power distribution to multiple sensors on a single control cabinet bus bar. IC Role / Device Role / Timing Role: D1 acts as primary clamping element across VCC-GND; exposed pad transfers heat directly to PCB copper; thermal impedance limits junction rise to <100 °C under 2 A surge. Use Value: Replaces bulkier TVS arrays while meeting EN 60947-5-2 surge immunity requirements - reducing board space by 4.5 mm² per node. |
| PNP High-Side Sensor Configuration | NPN Low-Side Sensor Configuration |
|
Use Scenario: Interface between PNP-output photoelectric sensor and microcontroller GPIO with 3.3 V logic threshold. IC Role / Device Role / Timing Role: HS connects to 24 V supply; LS ties to sensor S+; V+ links to sensor S+; V− to GND - enabling D2 to clamp positive spikes on active-high output. Use Value: Maintains signal integrity during 20 ns fast-edge switching while limiting overshoot to <46 V - preventing latch-up in downstream logic. |
Use Scenario: Connecting NPN-output capacitive level sensor to isolated analog input module in hazardous area zone. IC Role / Device Role / Timing Role: LS connects to GND; HS to sensor S−; K to 24 V; A to sensor supply - configuring D3 as reverse-blocking diode and D1 as return-path clamp. Use Value: Ensures fail-safe behavior during accidental reverse connection; 1 A 10 ms surge rating prevents fuse blowing during commissioning errors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar transient and reverse polarity protection applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STSPIN32F0B | Integrated 3-phase gate driver + MCU; no dedicated triple-diode protection; requires external TVS for sensor interface. | Targeted at motor control, not sensor termination; lacks EN 60947-5-2 compliance documentation. | Select only when sensor protection is secondary to motor commutation control; adds complexity and cost for pure protection use case. |
| TPD2E001DRYR | Two-channel ESD array (0.5 pF, ±15 kV); no overvoltage clamping capability; max. 100 mA continuous current. | Limited to low-power signal lines (USB, I²C); cannot handle 300 mA sensor switch current or 1 kV surge. | Use only for sub-5 V logic-level ESD protection; unsuitable for 24 V industrial sensor bus protection. |
Compared with STSPIN32F0B and TPD2E001DRYR, the SPT01-335DEE uniquely delivers coordinated triple-diode protection with validated 300 mA DC handling, 1 kV surge immunity, and mechanical configurability for both PNP/NPN topologies - making it the only single-package solution meeting full EN 60947-5-2 compliance for 3-wire sensors.
Availability
SPT01-335DEE is available at Aetrix Electronics and suitable for factory automation sensor interfaces, proximity switch protection, and 24 V industrial control systems requiring stable component supply with full production status since 2008.
Supply support for SPT01-335DEE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing silicon solutions for automotive, industrial, and power management applications.
The SPT01-335DEE belongs to ST's sensor interface protection product line, engineered specifically to simplify compliance with IEC 61131-2 and EN 60947-5-2 standards in industrial automation equipment.
FAQ
What is the maximum continuous current the SPT01-335DEE can handle in reverse blocking mode?
The D3 reverse blocking diode supports 300 mA continuous forward current at 1 V drop and 100 °C ambient, verified per Table 3 recommended operating conditions. Its 1 A 10 ms square pulse rating (IFSM) allows brief inrush tolerance but does not extend DC rating. Thermal derating applies above 85 °C ambient due to 330 °C/W Rth(j-a).
Can the SPT01-335DEE be used for 12 V sensor systems?
Yes - its 6 V to 36 V supply voltage range and 36 V stand-off voltage accommodate 12 V nominal systems with margin for ripple and transients. However, clamping performance remains optimized for 24 V applications; at 12 V, the 38 V breakdown may delay response to lower-magnitude surges, requiring verification against system-specific threat levels.
How is thermal management implemented in the QFN3x3 package?
Thermal transfer occurs primarily through the exposed pad (aligned with pins 1/6, 2/5, 3/4), which must be soldered to a minimum 0.85 mm² copper area on FR4 per Table 5. Zth(j-a) drops to 20 °C/W at 15 ms pulses, enabling 100 W peak dissipation. Stencil opening for the pad should be 50% of footprint area to balance solder volume and voiding risk.
Does the SPT01-335DEE require external components for basic operation?
No external components are required for core protection functions. The triple-diode array operates autonomously with correct terminal connection per Figure 8/9. However, optimal thermal performance demands proper PCB copper pour under the exposed pad, and surge testing per IEC 61000-4-5 requires the 500 Ω series resistor (RCC) shown in Figure 10 - not part of the device itself.
SPT01-335DEE Specifications
- Product attributes
- Attribute value
- Manufacturer:
- STMicroelectronics
- Package/Case:
- 6-VQFN Exposed Pad
- Series:
- SPT
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Type:
- Zener
- Unidirectional Channels:
- 3
- Bidirectional Channels:
- -
- Voltage - Reverse Standoff (Typ):
- 33V
- Voltage - Breakdown (Min):
- 38V
- Voltage - Clamping (Max) @ Ipp:
- 46V
- Current - Peak Pulse (10/1000µs):
- 2A (8/20µs)
- Power - Peak Pulse:
- 100W
- Power Line Protection:
- No
- Applications:
- General Purpose
- Capacitance @ Frequency:
- -
- Operating Temperature:
- -40°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6+3-QFN (3x3)
SPT01-335DEE FAQ
1.How can I place an order for SPT01-335DEE through Aetrix?
Please submit a Request for Quotation (RFQ) for SPT01-335DEE on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPT01-335DEE reliable?
The price and inventory of SPT01-335DEE are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPT01-335DEE is usually 5 days.
3.What payment methods are accepted for SPT01-335DEE?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPT01-335DEE transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPT01-335DEE?
SPT01-335DEE orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPT01-335DEE order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPT01-335DEE?
For technical support, including SPT01-335DEE datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPT01-335DEE requirements.
6.How does Aetrix verify that SPT01-335DEE is sourced from the original manufacturer or authorized distributors?
All SPT01-335DEE products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPT01-335DEE meets industry standards.
7.What is the process for return or replacement of SPT01-335DEE?
All SPT01-335DEE units undergo pre-shipment inspection (PSI). If there is an issue with SPT01-335DEE, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPT01-335DEE part is unused and in its original packaging.
Return procedure for SPT01-335DEE:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SPT01-335DEE Tags
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DESD3V3E1BL-7B
Diodes Incorporated
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Nexperia USA Inc.
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Toshiba Semiconductor and Storage
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Diodes Incorporated
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