Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

STMicroelectronics SPT02-236DDB

Part No.:
SPT02-236DDB
Manufacturer:
STMicroelectronics
Category:
TVS Diodes
Package:
2-WDFN Exposed Pad
Datasheet:
AetrixSPT02-236DDB.pdf
Description:
TVS DIODE 36VWM 46VC 2UQFN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:6,689

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

SPT02-236DDB from STMicroelectronics is a dual-diode transient voltage suppression array designed for 24 V proximity sensor power rail protection, providing reverse polarity blocking and overvoltage clamping. It features a minimum breakdown voltage of 38 V, 46 V max clamping at 2 A (8/20 µs), 1.1 V forward drop at 300 mA, -40 °C to +100 °C operating range, and µQFN-2L 0.8 mm flat package.

For engineers reviewing the SPT02-236DDB datasheet, SPT02-236DDB pinout, SPT02-236DDB application, or SPT02-236DDB equivalent, key selection criteria include IEC 61000-4-2/4-4/4-5 compliance, dual-diode functional separation (D1 for switch protection, D2 for reverse blocking), thermal performance under inductive demagnetization stress, and µQFN-2L footprint compatibility with high-density automation PCB layouts.

Technical Context

The SPT02-236DDB implements two functionally distinct diodes in a single µQFN-2L package: D1 serves as a clamping diode for inductive load demagnetization surge suppression on the power bus, while D2 acts as a series reverse-polarity blocking diode. Its design targets EN 60947-5-2–compliant sensor interfaces requiring simultaneous reverse voltage isolation and transient energy absorption.

Electrical behavior is defined by tightly coupled parameters: VBR ≥ 38 V ensures robust overvoltage thresholding; VCL ≤ 46 V at 2 A (8/20 µs) guarantees low-voltage clamping during surge events; VF ≤ 1.1 V at 300 mA minimizes forward conduction loss in the blocking path; and Rth(j-a) = 230 °C/W enables thermal management on standard FR4 boards.

Key Specifications

ParameterValue and Actual Design Meaning
Breakdown Voltage VBRMin 38 V - defines minimum overvoltage threshold before D1 enters avalanche conduction
Clamping Voltage VCLMax 46 V at 2 A, 8/20 µs - limits peak voltage seen by downstream 24 V sensor circuitry
Forward Voltage VFMax 1.1 V at 300 mA - ensures low insertion loss in reverse-blocking path (D2)
Surge Current IFSM3 A, 10 ms square pulse - supports repetitive inductive turn-off events without degradation
Ambient Temp Range-40 °C to +100 °C - validated for industrial factory automation environments
PackageµQFN-2L, 3.3 × 1.5 mm, 0.8 mm height, exposed pad - enables compact SMD placement near sensor connectors
ESD Rating±15 kV air / ±8 kV contact per diode - exceeds IEC 61000-4-2 Level 4 for field-deployed sensors

Pinout & Package

The SPT02-236DDB uses a µQFN-2L package with an exposed thermal pad and two terminals only - no internal bond wires or third connection. The package is lead-free, UL94 V0 compliant, and optimized for automated reflow assembly per J-STD-020D.

Pin/TerminalCircuit RoleDesign Meaning
KCathode of both D1 (power bus clamp) and D2 (reverse blocking)Common cathode node - connects to 24 V supply rail; carries combined surge current and reverse leakage paths
A1Anode of D1 (power bus protection diode)Connects to switched load side (e.g., transistor collector or relay coil); sinks inductive kickback energy
A2Anode of D2 (reverse blocking diode)Connects to sensor input or upstream power source; blocks reverse polarity while passing forward current

Key Features

FeatureDesign Value
Dual-function diode integrationSingle µQFN-2L package replaces discrete D1+D2 solution - reduces PCB area by >60% vs. SO-8 alternatives
IEC-compliant transient immunityValidated to IEC 61000-4-5 (±1 kV, 500 Ω), -4-4 (±2 kV), and -4-2 (±15 kV air) - eliminates need for external TVS staging
Inductive demagnetization supportWithstands 65 mJ single-pulse energy (L = 1 H, I = 0.3 A, VCC = 30 V) - protects solid-state switches driving solenoids or valves
Thermal reliabilityZth(j-a) = 6.5 °C/W at 15 ms - enables accurate junction temperature prediction during repetitive switching

Applications

Proximity Sensor Power InterfacePLC Digital Input Module

Use Scenario: 24 V DC inductive proximity sensor connected to a programmable logic controller input card in harsh factory environments with frequent ESD and load-switching transients.

IC Role / Device Role / Timing Role: D2 blocks reverse polarity during wiring errors; D1 clamps inductive flyback when sensor output transistor turns off.

Use Value: Prevents permanent damage to PLC input circuitry and extends sensor lifetime beyond 10 years under continuous operation at 100 °C ambient.

Use Scenario: Modular digital input terminal block accepting multiple 2-wire sensors, requiring standardized protection per IEC 61131-2 Type 1/2/3 interface classes.

IC Role / Device Role / Timing Role: Provides certified transient immunity and reverse blocking in a footprint smaller than discrete diode+TVS solutions.

Use Value: Enables full compliance with EN 60947-5-2 without redesigning PCB layout or adding components per channel.

Industrial Valve Actuator InterfaceMachine Safety Door Switch Protection

Use Scenario: 24 V solenoid valve driver where rapid de-energization generates high-energy inductive spikes (>60 mJ) across the control FET.

IC Role / Device Role / Timing Role: D1 absorbs demagnetization energy during turn-off; D2 prevents backfeed from auxiliary supplies during maintenance.

Use Value: Eliminates need for external snubbers or oversized MOSFETs - reduces BOM cost and improves system MTBF.

Use Scenario: Safety-rated door interlock switch in CNC machinery, subject to repeated ESD events and accidental short circuits during servicing.

IC Role / Device Role / Timing Role: Dual-diode architecture isolates fault currents while maintaining signal integrity for safety controller monitoring.

Use Value: Maintains SIL 2 functional safety integrity by preventing false trips or latch-up during transient exposure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual-diode transient and reverse polarity protection applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
SM712-TRSingle bidirectional TVS (±12 V standoff); no integrated reverse-blocking diode - requires external series diode for polarity protectionLimited to unidirectional 24 V rail protection; cannot replace SPT02-236DDB's dual-function topologySelect only if reverse polarity risk is eliminated by system-level design and board space allows discrete diode addition
TPD2E001DRYRLow-capacitance ESD array (0.9 pF/channel); rated only for ±8 kV contact/±15 kV air - no surge rating or inductive energy handlingDesigned for data-line ESD only; lacks VBR ≥ 38 V and IFSM = 3 A capability for power rail useNot suitable for sensor power rail protection - use only on low-voltage signal lines adjacent to protected circuits

Compared with SM712-TR and TPD2E001DRYR, the SPT02-236DDB uniquely integrates both clamping and reverse-blocking functions in one package with validated 1 kV surge and 65 mJ inductive energy handling - enabling simpler, more reliable protection for 24 V industrial sensor power interfaces.

Availability

SPT02-236DDB is available at Aetrix Electronics and suitable for factory automation sensor interfaces, PLC digital input modules, industrial valve actuator drivers, and machine safety door switch protection requiring stable component supply and long-term lifecycle assurance.

Supply support for SPT02-236DDB includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

STMicroelectronics is a global semiconductor leader headquartered in Geneva, Switzerland, designing and manufacturing analog, MCU, power, and sensor solutions for industrial, automotive, and consumer markets.

The SPT series is ST's dedicated product line for sensor interface protection ICs, engineered specifically to meet EN 60947-5-2 and IEC 61131-2 requirements in factory automation systems - emphasizing compactness, dual-function integration, and long-term reliability under thermal and electrical stress.

FAQ

What is the maximum continuous forward current rating for the reverse-blocking diode (D2)?

The SPT02-236DDB D2 diode is rated for 300 mA peak forward current at Tj = 150 °C with 50% duty cycle. Its steady-state DC current capability is limited by thermal dissipation: at 100 °C ambient and 230 °C/W Rth(j-a), continuous operation above ~120 mA requires careful PCB copper area design to avoid exceeding 150 °C junction temperature.

Can the SPT02-236DDB be used on a 12 V system?

Yes, but with reduced margin: its 38 V minimum breakdown voltage is optimized for 24 V nominal systems. At 12 V, the clamping headroom remains sufficient for typical transients, but the 33 V reverse stand-off voltage (VRM) means it may conduct slightly under sustained overvoltage conditions - verify system-level surge profiles before deployment.

How is thermal performance affected by the absence of a solder mask opening on the exposed pad?

Omitting the solder mask opening on the µQFN-2L exposed pad increases Rth(j-a) by ~30–40%, raising junction temperature under surge conditions. ST's recommended footprint includes a fully exposed pad with 50% stencil opening ratio - deviation risks exceeding 150 °C junction limit during repetitive 3 A pulses.

Does the SPT02-236DDB require external current-limiting resistors in series with D2?

No. The D2 reverse-blocking diode has no series resistor requirement: its 1.1 V forward drop at 300 mA and 3 A surge rating allow direct in-line placement between power source and sensor. External resistors would degrade voltage regulation and are unnecessary unless system-level current limiting is required for fault containment.

SPT02-236DDB Specifications

Product attributes
Attribute value
Manufacturer:
STMicroelectronics
Package/Case:
2-WDFN Exposed Pad
Series:
SPT
Packaging:
Tape & Reel (TR)
Product Status:
Active
Type:
Zener
Unidirectional Channels:
-
Bidirectional Channels:
1
Voltage - Reverse Standoff (Typ):
36V
Voltage - Breakdown (Min):
38V
Voltage - Clamping (Max) @ Ipp:
46V
Current - Peak Pulse (10/1000µs):
2A (8/20µs)
Power - Peak Pulse:
1400W (1.4kW)
Power Line Protection:
No
Applications:
General Purpose
Capacitance @ Frequency:
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
2-uQFN (3.3x1.5)

SPT02-236DDB FAQ

1.How can I place an order for SPT02-236DDB through Aetrix?

Please submit a Request for Quotation (RFQ) for SPT02-236DDB on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPT02-236DDB reliable?

The price and inventory of SPT02-236DDB are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPT02-236DDB is usually 5 days.

3.What payment methods are accepted for SPT02-236DDB?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPT02-236DDB transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPT02-236DDB?

SPT02-236DDB orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPT02-236DDB order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPT02-236DDB?

For technical support, including SPT02-236DDB datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPT02-236DDB requirements.

6.How does Aetrix verify that SPT02-236DDB is sourced from the original manufacturer or authorized distributors?

All SPT02-236DDB products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPT02-236DDB meets industry standards.

7.What is the process for return or replacement of SPT02-236DDB?

All SPT02-236DDB units undergo pre-shipment inspection (PSI). If there is an issue with SPT02-236DDB, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPT02-236DDB part is unused and in its original packaging.

Return procedure for SPT02-236DDB:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SPT02-236DDB Tags

  • SPT02-236DDB
  • SPT02-236DDB PDF
  • SPT02-236DDB Datasheet
  • SPT02-236DDB Specifications
  • SPT02-236DDB Images
  • STMicroelectronics
  • STMicroelectronics SPT02-236DDB
  • Buy SPT02-236DDB
  • SPT02-236DDB Price
  • SPT02-236DDB Distributor
  • SPT02-236DDB Supplier
  • SPT02-236DDB Wholesale
Related Products
ESD9B5.0ST5G
ESD9B5.0ST5G

onsemi

DESD3V3E1BL-7B
DESD3V3E1BL-7B

Diodes Incorporated

ESD5Z3.3T1G
ESD5Z3.3T1G

onsemi

D5V0H1B2LP-7B
D5V0H1B2LP-7B

Diodes Incorporated

D5V0P1B2LP-7B
D5V0P1B2LP-7B

Diodes Incorporated

DESD5V0U1BA-7
DESD5V0U1BA-7

Diodes Incorporated

ESD5Z5.0T1G
ESD5Z5.0T1G

onsemi

DESD5V0U1BB-7
DESD5V0U1BB-7

Diodes Incorporated

D12V0L1B2LP-7B
D12V0L1B2LP-7B

Diodes Incorporated

PESD2V0Y1BSFYL
PESD2V0Y1BSFYL

Nexperia USA Inc.

DF2S5M4CT,L3F
DF2S5M4CT,L3F

Toshiba Semiconductor and Storage

D5V0L1B2WS-7
D5V0L1B2WS-7

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER