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Infineon Technologies SPW16N50C3FKSA1

Part No.:
SPW16N50C3FKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixSPW16N50C3FKSA1.pdf
Description:
MOSFET N-CH 560V 16A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:148

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Product details

Overview

SPW16N50C3FKSA1 from Infineon Technologies is a 500 V, 16 A N-channel enhancement-mode power MOSFET in TO-247 package, featuring 0.29 Ω RDS(on) at VGS = 10 V and Tj = 25 °C, ultra-low gate charge (Qg = 48 nC), and avalanche-rated operation for robustness in hard-switching SMPS and motor drives.

For engineers reviewing the SPW16N50C3FKSA1 datasheet, SPW16N50C3FKSA1 pinout, SPW16N50C3FKSA1 application, or SPW16N50C3FKSA1 equivalent, key selection criteria include RDS(on), Qg, EAS, dV/dt ruggedness, and thermal resistance RthJC = 0.5 K/W - all critical for high-efficiency 400 V DC-link converters and industrial inverters.

Technical Context

This MOSFET employs Infineon's CoolMOS™ C3 technology, delivering improved transconductance (gfs = 12 S min) and reduced effective output capacitance (Coss,er = 170 pF) to minimize switching losses. Its periodic avalanche rating (EAS = 510 mJ) and dV/dt immunity (>15 V/ns) support reliable operation under transient overvoltage conditions without external snubbers.

The device integrates a fast-recovery body diode with trr = 120 ns and Qrr = 1.2 µC at IF = 8 A, enabling efficient synchronous rectification and half-bridge ZVS topologies. Thermal design is supported by low junction-to-case resistance (0.5 K/W) and defined safe operating area up to 100 µs pulse width.

Key Specifications

ParameterValue and Actual Design Meaning
VDS500 V - supports 400 V DC-link systems with ≥25 % voltage margin for surge and ripple handling
RDS(on)0.29 Ω max @ VGS = 10 V, Tj = 25 °C - enables <1.5 W conduction loss at 16 A continuous drain current
Qg48 nC - reduces gate drive power and allows use of smaller, lower-cost drivers in high-frequency designs
EAS510 mJ - provides single-pulse avalanche energy rating for unclamped inductive switching reliability
RthJC0.5 K/W - permits 125 W continuous power dissipation with ≤62.5 °C temperature rise across junction-to-case interface
Ciss1750 pF - defines input capacitance affecting gate drive loop stability and turn-on speed
tr/tf20/45 ns - enables sub-100 kHz hard-switching with controlled EMI and minimal overlap loss

Pinout & Package

SPW16N50C3FKSA1 uses the standard TO-247-3L package: isolated metal tab (drain), center lead (source), right lead (gate). The case is electrically connected to the drain terminal.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)Main high-side current path and thermal interfaceMust be mounted to heatsink with electrically insulating but thermally conductive interface; carries full load current and dissipates >90 % of heat
SourceReference node for gate drive and current sensingServes as return path for load current and ground reference for gate driver IC; low-inductance layout essential for dV/dt immunity
GateControl electrode for channel formationRequires low-impedance drive (≤10 Ω series resistor) to manage Qg = 48 nC and suppress ringing during fast transitions

Key Features

FeatureDesign Value
Ultra-low gate chargeQg = 48 nC enables 100–300 kHz operation with minimal driver loss and compact gate resistor sizing
Avalanche-ratedSingle-pulse EAS = 510 mJ ensures robustness against inductive kickback in relay/motor control without snubber circuits
Low effective output capacitanceCoss,er = 170 pF reduces stored energy (Eoss = 12 µJ @ 400 V), cutting turn-off loss in high-voltage converters
Fast body diodetrr = 120 ns, Qrr = 1.2 µC supports ZVS in LLC resonant converters and reduces commutation loss in half-bridges
High dV/dt ruggednessRated >15 V/ns - prevents false turn-on in high-noise motor drive and inverter applications

Applications

Industrial Motor DrivesServer & Telecom SMPS

Use Scenario: Three-phase inverter stage for 0.75–2.2 kW AC induction motors with 400 V DC bus.

IC Role / Device Role / Timing Role: High-side and low-side switch in IGBT/MOSFET-based 6-pulse inverter; operates at 8–16 kHz PWM frequency.

Use Value: RDS(on) = 0.29 Ω and Qg = 48 nC reduce total losses by ~18 % vs. legacy 500 V MOSFETs, improving thermal margin at full load.

Use Scenario: Primary-side switch in 1–3 kW active-clamp forward or LLC resonant converter.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC input; conducts during primary on-time and blocks during reset/recovery phase.

Use Value: Low Coss,er (170 pF) and fast body diode (trr = 120 ns) enable zero-voltage switching across wide load range, increasing efficiency to >95 %.

Uninterruptible Power SuppliesSolar Inverters

Use Scenario: Bidirectional DC–AC inverter stage in online UPS with 400 V DC link and 230 V AC output.

IC Role / Device Role / Timing Role: Half-bridge switch subjected to repetitive avalanche stress during battery discharge transients and grid faults.

Use Value: EAS = 510 mJ and rated repetitive avalanche current (IAR = 16 A) eliminate need for external clamping, simplifying BOM and layout.

Use Scenario: DC–AC conversion stage in string inverters with 600 V maximum PV array voltage and 400 V DC bus.

IC Role / Device Role / Timing Role: High-voltage switch in H-bridge topology; must withstand 1.2× VBR surges per IEC 62109.

Use Value: V(BR)DSS = 500 V with 25 % margin and dV/dt immunity >15 V/ns ensure compliance with solar safety standards without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP16N50FLRDS(on) = 0.32 Ω, Qg = 52 nC, EAS = 420 mJ, TO-220FP packageLimited to ≤100 W continuous due to higher RthJA (62 K/W); not suitable for forced-air-cooled >500 W designsSelect when cost sensitivity outweighs thermal performance and board space allows larger heatsink footprint
IPP60R190C7650 V rating, RDS(on) = 0.19 Ω, Qg = 43 nC, SuperSO8 packageHigher voltage grade increases margin for 600 V PV systems but adds 15 % conduction loss at 400 V due to higher specific on-resistancePrefer for new 600 V DC designs where future-proofing and tighter RDS(on) tolerance are prioritized

Compared with STP16N50FL and IPP60R190C7, SPW16N50C3FKSA1 delivers optimal balance of 500 V rating, low RDS(on), and proven avalanche ruggedness in TO-247 - making it ideal for cost-constrained yet thermally demanding industrial 400 V applications where reliability trumps marginal voltage headroom.

Availability

SPW16N50C3FKSA1 is available at Aetrix Electronics and suitable for industrial motor drives, server SMPS, uninterruptible power supplies, and solar inverters requiring stable component supply and long-term production continuity.

Supply support for SPW16N50C3FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, sensor, and automotive ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

SPW16N50C3FKSA1 belongs to the CoolMOS™ C3 family, engineered for high-efficiency, high-reliability switching in industrial and renewable energy systems operating at 400–600 V DC bus voltages.

FAQ

Is SPW16N50C3FKSA1 suitable for high-frequency resonant converters?

Yes - its low Qg (48 nC), low Coss,er (170 pF), and fast body diode (trr = 120 ns) make it well-suited for LLC and ZVS-based resonant topologies up to 300 kHz. Layout must minimize source inductance to preserve dV/dt immunity and switching speed.

What is the maximum continuous drain current at 100 °C case temperature?

At TC = 100 °C, the maximum continuous drain current is 11.5 A, derived from the derating curve and Ptot = 125 W with RthJC = 0.5 K/W. This assumes adequate heatsinking and no ambient temperature limitation.

Does SPW16N50C3FKSA1 require a gate resistor for EMI suppression?

Yes - a 5–10 Ω non-inductive gate resistor is recommended to dampen ringing caused by Qg = 48 nC interacting with PCB trace inductance. Values above 15 Ω increase switching losses disproportionately without meaningful EMI benefit.

Can this MOSFET replace older CoolMOS™ C2 devices in existing designs?

Yes - SPW16N50C3FKSA1 is a direct drop-in replacement for SPW16N50C2, offering identical pinout, improved RDS(on) (0.29 Ω vs. 0.32 Ω), and enhanced EAS (510 mJ vs. 450 mJ), with no changes required to gate drive or thermal layout.

SPW16N50C3FKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
560 V
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs:
66 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1600 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
160W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3-1

SPW16N50C3FKSA1 FAQ

1.How can I place an order for SPW16N50C3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPW16N50C3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPW16N50C3FKSA1 reliable?

The price and inventory of SPW16N50C3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPW16N50C3FKSA1 is usually 5 days.

3.What payment methods are accepted for SPW16N50C3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPW16N50C3FKSA1 transactions.

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SPW16N50C3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPW16N50C3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPW16N50C3FKSA1?

For technical support, including SPW16N50C3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPW16N50C3FKSA1 requirements.

6.How does Aetrix verify that SPW16N50C3FKSA1 is sourced from the original manufacturer or authorized distributors?

All SPW16N50C3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPW16N50C3FKSA1 meets industry standards.

7.What is the process for return or replacement of SPW16N50C3FKSA1?

All SPW16N50C3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPW16N50C3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPW16N50C3FKSA1 part is unused and in its original packaging.

Return procedure for SPW16N50C3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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