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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPW24N60C3FKSA1

Name: SPW24N60C3FKSA1
Brand: Infineon Technologies
SKU: SPW24N60C3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPW24N60C3FKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SPW24N60C3FKSA1.pdf

Description:: MOSFET N-CH 650V 24.3A TO247-3

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Product details

Overview

SPW24N60C3 from Infineon Technologies is a 600 V, 24.3 A Cool MOS™ power transistor in PG-TO247 package, featuring R_DS(on) = 0.16 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 104.9 nC), and periodic avalanche rating. It serves as a high-efficiency high-voltage switching device in offline SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the SPW24N60C3 datasheet, SPW24N60C3 pinout, SPW24N60C3 application, or SPW24N60C3 equivalent, key selection criteria include its 50 V/ns dv/dt capability at T_j = 125°C, E_AS = 780 mJ single-pulse avalanche energy, and Co(er) = 141 pF effective output capacitance for hard-switched ZVS/ZCS design validation.

Technical Context

This 600 V superjunction MOSFET employs Infineon's third-generation Cool MOS™ technology to reduce conduction and switching losses simultaneously. Its low C_iss (3000 pF), C_oss (1000 pF), and Cr_ss (60 pF) enable high-frequency operation up to 100 kHz in resonant converters.

The device supports robust unclamped inductive switching with I_AR = 24.3 A repetitive avalanche current and operates across –55°C to +150°C junction temperature range. Its body diode exhibits t_rr = 600 ns and Q_rr = 13 µC under V_R = 480 V, I_F = 24.3 A, and di_F/dt = 100 A/µs conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Rated blocking voltage for 400 V DC-link applications with 50% safety margin
R_DS(on)	0.16 Ω @ T_j = 25°C - Enables <1.5 W conduction loss at 15.4 A continuous drain current
Q_g	104.9 nC - Reduces gate drive power and enables use of lower-cost 1–2 W drivers
E_AS	780 mJ - Supports reliable unclamped inductive switching in flyback and LLC primary switches
dv/dt	50 V/ns @ T_j = 125°C - Ensures noise-immune operation in high-dV/dt environments like motor inverters
t_r/t_f	21 ns / 14 ns - Facilitates <100 ns total switching transition for >200 kHz soft-switching designs
Co(er)	141 pF - Defines stored energy during V_DS rise; critical for ZVS turn-on loss calculation

Pinout & Package

SPW24N60C3 uses the PG-TO247 package (standard 3-pin through-hole variant with isolated tab), optimized for high-power thermal dissipation and mechanical robustness in industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
DRAIN (Tab)	Main current-carrying terminal, electrically connected to heatsink	Provides low-inductance, high-current path to DC bus; requires insulating pad when mounted to grounded heatsink
SOURCE	Reference node for gate drive and current sensing	Common return for gate driver supply and shunt-based current monitoring; defines local ground reference
GATE	Control input for MOSFET channel modulation	High-impedance node requiring <100 nC total charge; sensitive to ringing-requires RC snubber or gate resistor ≥3.3 Ω

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 104.9 nC reduces gate driver power dissipation by ~40% vs. standard 600 V MOSFETs
Periodic avalanche rated	I_AR = 24.3 A allows safe operation in circuits with unclamped inductive energy without external clamping
Extreme dv/dt immunity	50 V/ns at 125°C prevents false turn-on in high-noise bridge-leg configurations
Low effective output capacitance	Co(er) = 141 pF minimizes turn-on switching loss in hard-switched topologies
Enhanced transconductance	g_fs = 21.5 S improves gate control linearity and load regulation in closed-loop SMPS

Applications

Server PSU Primary Switch

Industrial PFC Boost Switch

Use Scenario: High-density 3 kW server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main high-side switch handling 400 V DC-link and 24 A peak current per phase.

Use Value: 0.16 Ω R_DS(on) and 104.9 nC Q_g cut total switching+conduction loss by 18% versus predecessor 650 V MOSFET.

Use Scenario: Three-phase 11 kW industrial PFC stage with interleaved boost architecture.

IC Role / Device Role / Timing Role: Low-loss boost switch operating at 35 kHz with 98.2% efficiency target.

Use Value: 780 mJ E_AS eliminates need for external avalanche snubbers, reducing BOM count and layout area.

EV Onboard Charger (OBC) DC-DC Stage

UPS Inverter Half-Bridge

Use Scenario: 6.6 kW bidirectional OBC DC-DC converter using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch with 600 V blocking requirement.

Use Value: Body diode t_rr = 600 ns and Q_rr = 13 µC enable zero-voltage switching without external diode parallel.

Use Scenario: 5 kVA online UPS inverter stage delivering pure sine wave output under 150% overload.

IC Role / Device Role / Timing Role: High-reliability low-R_DS(on) switch in half-bridge leg with 150°C max junction temperature.

Use Value: R_thJC = 0.52 K/W and T_j rating to +150°C sustain 24.3 A continuous current with forced-air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW24N60M2 (STMicroelectronics)	R_DS(on) = 0.17 Ω, Q_g = 95 nC, E_AS = 620 mJ	Lower gate charge but reduced avalanche ruggedness; requires tighter layout for dv/dt immunity	Preferred where gate drive power is constrained and avalanche stress is minimal
IPP60R190C7 (Infineon)	Same Cool MOS™ C7 generation, R_DS(on) = 0.19 Ω, Q_g = 84 nC, Co(er) = 125 pF	Improved switching speed and lower Co(er), but 190 mΩ limits conduction loss advantage at >12 A	Optimal for >75 kHz resonant converters where switching loss dominates

Compared with STW24N60M2 and IPP60R190C7, SPW24N60C3 delivers superior avalanche energy handling and higher continuous current rating, making it preferred for industrial PFC and UPS inverters where reliability under transient overloads is critical.

Availability

SPW24N60C3 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, EV onboard chargers, and UPS inverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for SPW24N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D centers.

SPW24N60C3 belongs to the Cool MOS™ C3 product line, engineered for high-efficiency, high-reliability 600 V switching in industrial power conversion systems where thermal stability and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPW24N60C3 supports 15.4 A continuous drain current at T_C = 100°C, verified per datasheet maximum ratings table. This derating reflects thermal resistance R_thJC = 0.52 K/W and ensures junction temperature remains ≤150°C with appropriate heatsinking and airflow.

Does SPW24N60C3 have an integrated body diode, and what are its recovery characteristics?

Yes, SPW24N60C3 includes a monolithic body diode with t_rr = 600 ns and Q_rr = 13 µC under V_R = 480 V, I_F = 24.3 A, and di_F/dt = 100 A/µs. Its soft recovery profile minimizes voltage overshoot and EMI in hard-switched topologies.

Can SPW24N60C3 be used in synchronous rectification applications?

No-SPW24N60C3 is a unidirectional N-channel high-voltage power MOSFET intended for high-side or low-side switching, not synchronous rectification. Its body diode is not optimized for reverse conduction duty cycles; dedicated SR controllers and logic-level FETs are required for that function.

What is the recommended gate resistor value for hard-switched 50 kHz operation?

A gate resistor of 3.3 Ω is validated in the datasheet for V_DD = 380 V, I_D = 24.3 A switching tests. For 50 kHz hard-switched operation, this value balances switching speed (t_r/t_f ≈ 21/14 ns) and gate ringing suppression while keeping driver power below 1.2 W.

SPW24N60C3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 160mOhm @ 15.4A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 1.2mA

Gate Charge (Qg) (Max) @ Vgs:: 135 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 240W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

SPW24N60C3FKSA1 FAQ

1.How can I place an order for SPW24N60C3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPW24N60C3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPW24N60C3FKSA1 reliable?

The price and inventory of SPW24N60C3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPW24N60C3FKSA1 is usually 5 days.

3.What payment methods are accepted for SPW24N60C3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPW24N60C3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPW24N60C3FKSA1?

SPW24N60C3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPW24N60C3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPW24N60C3FKSA1?

For technical support, including SPW24N60C3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPW24N60C3FKSA1 requirements.

6.How does Aetrix verify that SPW24N60C3FKSA1 is sourced from the original manufacturer or authorized distributors?

All SPW24N60C3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPW24N60C3FKSA1 meets industry standards.

7.What is the process for return or replacement of SPW24N60C3FKSA1?

All SPW24N60C3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPW24N60C3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPW24N60C3FKSA1 part is unused and in its original packaging.

Return procedure for SPW24N60C3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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