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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPW35N60C3FKSA1

Name: SPW35N60C3FKSA1
Brand: Infineon Technologies
SKU: SPW35N60C3FKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPW35N60C3FKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: SPW35N60C3FKSA1.pdf

Description:: MOSFET N-CH 650V 34.6A TO247-3

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Product details

Overview

SPW35N60C3 from Infineon Technologies is a 600 V, 34.6 A CoolMOS™ C3 superjunction power MOSFET in PG-TO247 package, designed for high-efficiency hard-switched and resonant SMPS topologies including PFC and LLC converters. It features ultra-low R_DS(on) (0.081 Ω typ at 25 °C), low gate charge (Q_g = 150 nC max), and periodic avalanche rating up to 1500 mJ - enabling robust operation in industrial AC/DC power supplies.

For engineers reviewing the SPW35N60C3 datasheet, SPW35N60C3 pinout, SPW35N60C3 application, or SPW35N60C3 equivalent, key selection criteria include its 600 V V_DS, 34.6 A continuous drain current at T_C = 100 °C, 0.4 K/W thermal resistance (junction-to-case), and dv/dt ruggedness of 50 V/ns - critical for EMI-sensitive, high-density power designs.

Technical Context

This device implements Infineon's third-generation CoolMOS™ technology with optimized charge balancing for reduced conduction and switching losses. Its low effective output capacitance (C_o(er) = 180 pF) and reverse transfer capacitance (C_rss = 100 pF) minimize Miller effect and improve turn-off controllability in high-frequency ZVS/ZCS circuits.

The integrated fast-recovery body diode (t_rr = 600 ns, Q_rr = 21 µC) supports synchronous rectification and half-bridge configurations without external diodes. Its rated repetitive avalanche current (I_AR = 34.6 A) and single-pulse E_AS = 1500 mJ enable reliable operation under transient overloads in UPS and motor drive inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC-link systems with 50% voltage margin for surge and ringing
R_DS(on) max	0.1 Ω at 10 V_GS, 21.9 A, 25 °C - enables <1.5 W conduction loss at full load in 1 kW PFC stages
Q_g max	200 nC - reduces gate driver power demand and allows use of lower-cost 1-A drivers
E_AS	1500 mJ - withstands single-event inductive energy spikes without failure in flyback or forward converters
dv/dt rating	50 V/ns - ensures noise-immune switching in high-dV/dt environments like IGBT gate-drive isolation circuits
t_r/t_f	5 ns / 10 ns - supports >500 kHz switching in LLC resonant converters with minimal overlap loss
C_iss	4500 pF - defines input impedance for gate driver sizing and EMI filter design

Pinout & Package

SPW35N60C3 uses the PG-TO247 package (standard 3-pin through-hole variant with isolated tab), offering low thermal resistance (R_thJC = 0.4 K/W) and mechanical robustness for high-power mounting on heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output terminal	Electrically connected to metal tab - must be electrically isolated from heatsink unless system ground reference permits
Source	Power return and gate reference node	Serves as common reference for gate drive and current sensing; low-inductance layout essential for stability
Gate	Control input for channel modulation	High-impedance node requiring RC snubber (R_G = 3.3 Ω typical) to damp ringing and control dV/dt

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 150 nC (typ) - cuts gate drive losses by >40% vs. first-gen CoolMOS™ in 300 kHz PFC designs
Periodic avalanche rated	I_AR = 34.6 A, t_AR ≤ 1 µs - eliminates need for external clamping in boost converter overvoltage events
Extreme dv/dt ruggedness	50 V/ns at T_j = 125 °C - prevents false turn-on in high-side half-bridge configurations with fast bus transients
Low effective output capacitance	C_o(er) = 180 pF - reduces stored energy (E_oss) and improves light-load efficiency in resonant topologies
Integrated fast body diode	t_rr = 600 ns, Q_rr = 21 µC - enables zero-voltage switching in LLC without adding discrete SiC diodes

Applications

Industrial AC/DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: 3.3 kW active PFC front-end stage operating at 100 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter.

Use Value: 0.081 Ω R_DS(on) limits conduction loss to <1.2 W at full load, improving system efficiency to >96.5%.

Use Scenario: Hot-swap OR-ing circuit in 48 V intermediate bus architecture with redundant power inputs.

IC Role / Device Role / Timing Role: Low-loss reverse-polarity protection switch with fast fault response.

Use Value: 50 V/ns dv/dt rating prevents spurious turn-on during bus transients, eliminating need for external gate clamps.

Uninterruptible Power Systems (UPS)

Motor Drive Inverters

Use Scenario: Bidirectional DC-AC inverter stage converting 400 V DC to 230 V AC with sinusoidal PWM.

IC Role / Device Role / Timing Role: Low-side switch in three-phase IGBT/MOSFET hybrid inverter leg.

Use Value: 1500 mJ E_AS rating absorbs regenerative energy spikes during sudden load disconnection.

Use Scenario: 7.5 kW variable-frequency drive feeding 3-phase induction motor with field-oriented control.

IC Role / Device Role / Timing Role: High-efficiency switching element in 20 kHz PWM inverter bridge.

Use Value: C_rss = 100 pF minimizes Miller-induced shoot-through risk, enabling stable operation with 50 ns dead time.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW35N60DM2	R_DS(on) = 0.085 Ω, Q_g = 165 nC, no specified E_AS rating	Lacks documented periodic avalanche capability; requires external clamping in PFC	Preferable where cost sensitivity outweighs avalanche robustness needs
IPP60R099C7	R_DS(on) = 0.099 Ω, Q_g = 125 nC, C_oss = 1100 pF	Lower gate charge but higher R_DS(on); optimized for >600 kHz operation	Better suited for high-frequency resonant converters with moderate power density

Compared with STW35N60DM2 and IPP60R099C7, SPW35N60C3 delivers superior avalanche ruggedness and lowest conduction loss at 100–200 kHz, making it optimal for industrial PFC and UPS where reliability under overload dominates over peak-frequency performance.

Availability

SPW35N60C3 is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, server rectifier modules, and uninterruptible power systems requiring stable component supply and long-term lifecycle support.

Supply support for SPW35N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability switched-mode power supplies operating from 65 kHz to 300 kHz, with emphasis on reduced gate drive loss and enhanced ruggedness in harsh electrical environments.

FAQ

What is the maximum junction temperature for continuous operation?

The SPW35N60C3 has a maximum junction temperature (T_j) of 150 °C. Continuous operation at this limit requires thermal design ensuring R_thJC + R_thCA ≤ 1.18 K/W when dissipating 103 W - achievable with forced-air-cooled heatsinks ≥ 120 cm² and thermal interface resistance <0.1 K·cm²/W.

Does SPW35N60C3 require a negative gate voltage for reliable turn-off?

No. The device operates reliably with 0 V to 10 V gate drive. Its V_GS(th) range (2.1–3.9 V) and low Miller plateau voltage (5.3 V) allow clean turn-off using standard 0/12 V gate drivers without negative bias - reducing driver complexity and PCB area in multi-MOSFET layouts.

Can SPW35N60C3 replace older CoolMOS™ C2 devices in existing designs?

Yes - SPW35N60C3 is a direct drop-in replacement for SPW35N60C2 with identical pinout, package, and voltage rating. It offers 15% lower R_DS(on) and 20% lower Q_g, enabling immediate efficiency gains without layout changes or gate driver requalification in legacy PFC and SMPS platforms.

How is the body diode performance validated for synchronous rectification?

The body diode is characterized with t_rr = 600 ns and Q_rr = 21 µC at I_F = 34.6 A, T_j = 25 °C. These values are measured per JEDEC JESD24-11 and confirmed across temperature - supporting use in synchronous buck or LLC secondaries where reverse recovery loss must remain below 0.5 W at 200 kHz switching.

SPW35N60C3FKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 34.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 100mOhm @ 21.9A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 1.9mA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 313W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

SPW35N60C3FKSA1 FAQ

1.How can I place an order for SPW35N60C3FKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPW35N60C3FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPW35N60C3FKSA1 reliable?

The price and inventory of SPW35N60C3FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPW35N60C3FKSA1 is usually 5 days.

3.What payment methods are accepted for SPW35N60C3FKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPW35N60C3FKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPW35N60C3FKSA1?

SPW35N60C3FKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPW35N60C3FKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPW35N60C3FKSA1?

For technical support, including SPW35N60C3FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPW35N60C3FKSA1 requirements.

6.How does Aetrix verify that SPW35N60C3FKSA1 is sourced from the original manufacturer or authorized distributors?

All SPW35N60C3FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPW35N60C3FKSA1 meets industry standards.

7.What is the process for return or replacement of SPW35N60C3FKSA1?

All SPW35N60C3FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPW35N60C3FKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPW35N60C3FKSA1 part is unused and in its original packaging.

Return procedure for SPW35N60C3FKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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