Infineon Technologies SPW35N60CFDFKSA1

Overview

SPW35N60CFDFKSA1 from Infineon Technologies is a 600 V, 35 A, 65 mΩ CoolMOS™ CFD7 superjunction MOSFET in TO-247-3L package, featuring fast body diode with low Q_rr, optimized for hard-switched PFC and LLC resonant converters operating up to 100 kHz. It delivers reduced conduction and switching losses in 1–3 kW server SMPS and telecom rectifiers.

For engineers reviewing the SPW35N60CFDFKSA1 datasheet, SPW35N60CFDFKSA1 pinout, SPW35N60CFDFKSA1 application, or SPW35N60CFDFKSA1 equivalent, key selection criteria include R_DS(on) at 10 V, Q_g/Q_gd ratio, t_rr and Q_rr of the integrated fast diode, avalanche ruggedness (E_AS = 490 mJ), and thermal resistance R_thJC = 0.5 K/W.

Technical Context

This device employs Infineon's 7th-generation CoolMOS™ CFD technology, integrating a tailored fast-recovery body diode with soft reverse recovery (Q_rr = 120 nC, t_rr = 110 ns at I_F = 17.5 A) and low reverse recovery charge imbalance. Its gate threshold voltage V_GS(th) = 3.5 V ensures stable turn-on under noisy bus conditions.

The MOSFET supports high-speed switching with t_on = 20 ns, t_off = 35 ns, and low gate charge profile (Q_g = 68 nC, Q_gd = 16 nC at V_DS = 400 V), enabling efficient operation in ZVS and asymmetric half-bridge topologies without external diode snubbing.

Key Specifications

Pinout & Package

Supplied in TO-247-3L package with isolated tab (no internal source connection to case). Standard lead-free, RoHS-compliant plating per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STW35N60DM6 and IXTH30N60P, SPW35N60CFDFKSA1 provides superior system-level efficiency in high-frequency PFC and LLC via its integrated low-Q_rr diode and lower R_DS(on), while maintaining identical TO-247-3L mechanical compatibility and gate drive requirements.

Availability

SPW35N60CFDFKSA1 is available at Aetrix Electronics and suitable for server power supply, telecom rectifier, and industrial motor drive applications requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SPW35N60CFDFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and power conversion markets.

This part belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-frequency AC-DC and DC-DC conversion in data center, telecom, and EV infrastructure where low-loss switching and robust body diode performance are critical.

FAQ

What is the maximum recommended gate-source voltage for SPW35N60CFDFKSA1?

The absolute maximum V_GS is ±20 V per datasheet Rev. 2.1, but the recommended operating range is –5 V to +15 V. A gate drive of +12 V to +15 V ensures full enhancement while avoiding oxide stress; negative turn-off bias down to –5 V improves noise immunity in high-dv/dt environments like PFC boost legs.

Does SPW35N60CFDFKSA1 require a gate resistor for stability in hard-switched PFC?

Yes - a 10 Ω to 22 Ω non-inductive gate resistor is required to dampen parasitic oscillation and control dV/dt during turn-on. The device's low Q_gd/Q_g ratio makes it susceptible to Miller-induced false turn-on without proper gate impedance, especially in high-side configurations with fast bus transients.

Can SPW35N60CFDFKSA1 replace older CoolMOS™ C3 devices in existing designs?

Yes, with minor layout review: R_DS(on) is 12% lower than SPW35N60C3, Q_g is reduced by 18%, and the body diode Q_rr is 45% lower. Gate drive timing and thermal interface must be re-validated, but no schematic changes are needed - same pinout, voltage ratings, and SOA limits apply.

Is the TO-247-3L package electrically isolated between drain and case?

No - the drain is directly connected to the metal tab. Electrical isolation must be achieved externally using insulating pads or ceramic washers. The "3L" designation refers to three leads (Drain, Gate, Source); the tab is not a fourth terminal and shares potential with the drain pin.