Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2308CES-T1_GE3

Name: SQ2308CES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2308CES-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SQ2308CES-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2308CES-T1_GE3.pdf

Description:: MOSFET N-CH 60V 2.3A SOT23

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:19,179

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SQ2308CES-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® MOSFET with 60 V V_DS, 0.150 Ω R_DS(on) at 10 V_GS, and 2.3 A continuous drain current at 25 °C - designed for low-power load switching in engine control units, body electronics, and LED lighting modules.

For engineers reviewing the SQ2308CES-T1_GE3 datasheet, SQ2308CES-T1_GE3 pinout, SQ2308CES-T1_GE3 application, or SQ2308CES-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 175 °C junction rating, SOT-23 package thermal performance (R_thJA = 120 °C/W), and verified UIS robustness for automotive transients.

Technical Context

This discrete power MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching (t_d(on) = 4 ns, t_f = 12 ns) with gate charge Q_g = 3.5 nC (typ.) at 10 V_GS. It integrates a body diode with V_SD = 0.85 V (typ.) at I_F = 1.6 A and supports pulsed drain currents up to 9 A.

The device operates across -55 °C to +175 °C junction temperature, with R_DS(on) increasing to 0.325 Ω at 175 °C and 2.3 A - enabling reliable operation in under-hood environments. Its 100 % R_g and UIS testing ensures production-level ruggedness for automotive load-dump and inductive-switching events.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - supports 42 V automotive systems and transient clamping up to ISO 7637-2 Pulse 5a.
R_DS(on) @ 10 V_GS	0.150 Ω max - enables <150 mW conduction loss at 2.3 A, critical for thermally constrained SOT-23 layouts.
I_D (continuous)	2.3 A @ T_C = 25 °C - defines maximum steady-state current with PCB heatsinking per FR-4 1"² mount.
Q_g	3.5 nC typ. - determines gate drive energy requirement and switching speed in PWM applications.
T_J range	-55 °C to +175 °C - certified for under-hood placement without derating in engine management modules.
V_GS(th)	1.5–2.5 V - ensures logic-level compatibility with 3.3 V and 5 V microcontrollers in body-control units.
E_AS	2.5 mJ - quantifies single-pulse avalanche energy handling for inductive load turn-off protection.

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3 leads: compact 2.8 mm × 2.1 mm footprint, 1.12 mm max height, and 0.95 mm lead pitch - optimized for high-density automotive PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires ≤ ±20 V drive; input capacitance C_iss = 164 pF (typ.) affects driver sizing.
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground in low-side switch configurations.
3 (D)	Drain	High-side connection to load; electrically connected to exposed drain pad in thermally enhanced variants (not applicable here).

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTOL, TC, and HAST - required for ECU and ADAS subsystems.
100 % UIS tested	Each unit passes unclamped inductive switching verification at rated current and voltage - eliminates field failure from relay/coil turn-off spikes.
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs - improves power density in space-constrained modules like seat controllers.
175 °C TJ rating	Enables operation adjacent to heat sources (e.g., near ignition coils) without external thermal derating or forced cooling.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E - meets Tier 1 supplier environmental compliance mandates.

Applications

Engine Control Unit (ECU) Fuel Injector Driver	Automotive LED Headlamp Dimming
Use Scenario: Switching 12 V fuel injector solenoids with 2–4 ms pulse width and 10 Hz repetition rate. IC Role / Device Role / Timing Role: Low-side power switch controlling solenoid current path; handles inductive kickback via integrated body diode. Use Value: 2.5 mJ E_AS rating absorbs flyback energy without external snubber, reducing BOM count and board area.	Use Scenario: PWM dimming of 60 W LED arrays in adaptive driving beam (ADB) headlamps. IC Role / Device Role / Timing Role: High-frequency (≥1 kHz) low-side switch modulating LED current with minimal switching loss. Use Value: 3.5 nC Q_g and 12 ns fall time enable efficient 20 kHz PWM without excessive gate driver power dissipation.
Body Control Module (BCM) Window Lift Motor	Start-Stop System Solenoid Control
Use Scenario: Bidirectional DC motor control for power window lift/drop using H-bridge topology. IC Role / Device Role / Timing Role: One quadrant switch in half-H-bridge configuration; conducts 2.3 A continuous during stall conditions. Use Value: 0.150 Ω R_DS(on) limits I²R heating to <800 mW at full stall, avoiding thermal shutdown in sealed BCM enclosures.	Use Scenario: Engaging 48 V starter solenoid during engine restart in 48 V mild-hybrid vehicles. IC Role / Device Role / Timing Role: High-reliability interface between 3.3 V MCU GPIO and solenoid coil; withstands load-dump transients. Use Value: AEC-Q101 qualification and 60 V V_DS ensure immunity to ISO 16750-2 12 V system surges up to +110 V for 50 ms.

Engine Control Unit (ECU) Fuel Injector Driver

Automotive LED Headlamp Dimming

Use Scenario: Switching 12 V fuel injector solenoids with 2–4 ms pulse width and 10 Hz repetition rate.

IC Role / Device Role / Timing Role: Low-side power switch controlling solenoid current path; handles inductive kickback via integrated body diode.

Use Value: 2.5 mJ E_AS rating absorbs flyback energy without external snubber, reducing BOM count and board area.

Use Scenario: PWM dimming of 60 W LED arrays in adaptive driving beam (ADB) headlamps.

IC Role / Device Role / Timing Role: High-frequency (≥1 kHz) low-side switch modulating LED current with minimal switching loss.

Use Value: 3.5 nC Q_g and 12 ns fall time enable efficient 20 kHz PWM without excessive gate driver power dissipation.

Body Control Module (BCM) Window Lift Motor

Start-Stop System Solenoid Control

Use Scenario: Bidirectional DC motor control for power window lift/drop using H-bridge topology.

IC Role / Device Role / Timing Role: One quadrant switch in half-H-bridge configuration; conducts 2.3 A continuous during stall conditions.

Use Value: 0.150 Ω R_DS(on) limits I²R heating to <800 mW at full stall, avoiding thermal shutdown in sealed BCM enclosures.

Use Scenario: Engaging 48 V starter solenoid during engine restart in 48 V mild-hybrid vehicles.

IC Role / Device Role / Timing Role: High-reliability interface between 3.3 V MCU GPIO and solenoid coil; withstands load-dump transients.

Use Value: AEC-Q101 qualification and 60 V V_DS ensure immunity to ISO 16750-2 12 V system surges up to +110 V for 50 ms.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	R_DS(on) = 0.125 Ω @ 4.5 V_GS; 30 V V_DS; same SOT-23 package	Limited to 30 V systems; unsuitable for 42 V architectures or load-dump protection	Select only for 12 V body electronics where lower gate threshold and higher 4.5 V_GS performance are prioritized.
IPB050N04LGATMA1	40 V V_DS; TO-263 package; R_DS(on) = 0.005 Ω @ 10 V_GS	Higher current (120 A), larger footprint, not drop-in compatible - requires PCB redesign	Choose for high-power 42 V auxiliary loads where thermal margin exceeds SOT-23 capability.

Compared with DMN2004LKQ-7 and IPB050N04LGATMA1, the SQ2308CES-T1_GE3 uniquely balances 60 V rating, AEC-Q101 compliance, and SOT-23 form factor - making it the only option for space-constrained 42 V automotive switches requiring full transient immunity without layout change.

Availability

SQ2308CES-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, and LED lighting systems requiring stable component supply across automotive production lifecycles.

Supply support for SQ2308CES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability power MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ2308CES-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® family, engineered specifically for robust, thermally efficient switching in harsh-environment vehicle subsystems.

FAQ

What is the maximum continuous drain current for SQ2308CES-T1_GE3 at 125 °C case temperature?

The SQ2308CES-T1_GE3 supports 1.3 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal resistance limitations of the SOT-23 package under sustained high-temperature operation - users must verify PCB copper area and airflow to maintain this rating in actual designs. The SQ2308CES-T1_GE3 datasheet confirms this value applies to FR-4 1"² mounting conditions.

Does SQ2308CES-T1_GE3 have a guaranteed gate threshold voltage range?

Yes, the SQ2308CES-T1_GE3 has a guaranteed V_GS(th) range of 1.5 V to 2.5 V at I_D = 250 μA, per the Electrical Specifications table. This ensures reliable turn-on with standard 3.3 V and 5 V logic outputs without requiring level-shifting circuitry. The SQ2308CES-T1_GE3 maintains this specification across its full operating temperature range (-55 °C to +175 °C).

Is SQ2308CES-T1_GE3 suitable for reverse polarity protection circuits?

No, the SQ2308CES-T1_GE3 is an N-channel MOSFET intended for low-side switching and cannot be used directly for reverse polarity protection without external gate drive circuitry. Its body diode conducts in the forward direction when source is more positive than drain - making it unsuitable as a high-side ideal diode replacement. For reverse polarity protection, dedicated P-channel or controller-based solutions are recommended instead of the SQ2308CES-T1_GE3.

What is the thermal resistance from junction to ambient for SQ2308CES-T1_GE3 under standard mounting?

The SQ2308CES-T1_GE3 has a junction-to-ambient thermal resistance (R_thJA) of 120 °C/W when mounted on a 1" square FR-4 PCB with 2 oz. copper on both sides. This value assumes no additional heatsinking and defines the worst-case temperature rise per watt of power dissipation. The SQ2308CES-T1_GE3 datasheet specifies this condition explicitly in the Thermal Resistance Ratings table.

How is the avalanche capability of SQ2308CES-T1_GE3 validated?

The SQ2308CES-T1_GE3 undergoes 100 % unclamped inductive switching (UIS) testing per JEDEC JESD24-11, with single-pulse avalanche energy E_AS rated at 2.5 mJ. This validation ensures each unit can safely absorb inductive energy from relay or solenoid turn-off without failure. The SQ2308CES-T1_GE3 datasheet documents this as a production test, not just a characterization parameter.

SQ2308CES-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 205 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2308CES-T1_GE3 FAQ

1.How can I place an order for SQ2308CES-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2308CES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2308CES-T1_GE3 reliable?

The price and inventory of SQ2308CES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2308CES-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2308CES-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2308CES-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2308CES-T1_GE3?

SQ2308CES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2308CES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2308CES-T1_GE3?

For technical support, including SQ2308CES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2308CES-T1_GE3 requirements.

6.How does Aetrix verify that SQ2308CES-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2308CES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2308CES-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2308CES-T1_GE3?

All SQ2308CES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2308CES-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2308CES-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2308CES-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-11 Comparator Circuit: Voltage Thresholds, Op-Amp Differences, LM393 and Practical Design

Comparator circuit design covering voltage thresholds, input limits, open-collector outputs, LM393 wiring, op-amp differences, hysteresis, timing, window detection and practical fault diagnosis.

2026-09-10 Schmitt Trigger Explained: Hysteresis, Circuits, Inverters and Applications

Schmitt triggers use separate rising and falling thresholds to stabilize slow or noisy signals. This guide covers hysteresis, 74HC14 and 74HCT14 selection, comparator calculations, RC oscillators and p…

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …