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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2308FES-T1_GE3

Name: SQ2308FES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2308FES-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2308FES-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2308FES-T1_GE3.pdf

Description:: MOSFET N-CH 60V 2.3A SOT23

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Product details

Overview

SQ2308FES-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 60 V drain-source voltage, 2.3 A continuous drain current at 25 °C, and 175 °C maximum junction temperature. It features R_DS(on) of 0.150 Ω at V_GS = 10 V and 0.164 Ω at V_GS = 4.5 V, and is housed in a compact SOT-23 (TO-236) package. It serves as a high-reliability load switch in automotive body electronics and low-power DC-DC converter synchronous rectification.

For engineers reviewing the SQ2308FES-T1_GE3 datasheet, SQ2308FES-T1_GE3 pinout, SQ2308FES-T1_GE3 application, or SQ2308FES-T1_GE3 equivalent, key selection criteria include its AEC-Q101 qualification, 100 % R_g and UIS testing, thermal performance up to +175 °C, and verified gate charge (Q_g = 3.6–5.3 nC) for fast switching in space-constrained automotive modules.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low R_DS(on) and robust avalanche energy handling (E_AS = 2.5 mJ). Its gate threshold voltage (V_GS(th) = 1.5–2.5 V) enables reliable turn-on with standard 3.3 V or 5 V logic-level drivers, while its 100 % UIS-tested construction ensures survivability under inductive switching stress common in automotive solenoid and motor control circuits.

The device integrates a low-forward-voltage body diode (V_SD = 0.82–1.2 V at I_F = 1.6 A) with reverse recovery time (t_rr = 13–26 ns) suitable for freewheeling in buck converters and LED drivers. Thermal resistance values-R_thJA = 120 °C/W (PCB mount) and R_thJF = 80 °C/W-support stable operation in thermally dense automotive PCB layouts without forced cooling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	60 V - Maximum blocking voltage compatible with 42 V automotive systems and 24 V industrial rails.
R_DS(on) @ V_GS = 10 V	0.150 Ω - Enables ≤0.8 W conduction loss at 2.3 A, reducing thermal load in sealed modules.
R_DS(on) @ V_GS = 4.5 V	0.164 Ω - Ensures usable on-resistance with 5 V microcontroller GPIOs, eliminating level-shifter need.
I_D (continuous, T_C = 25 °C)	2.3 A - Supports medium-current loads such as HVAC actuators, mirror controls, and sensor biasing.
T_J max	+175 °C - Meets under-hood temperature requirements per AEC-Q101, enabling placement near engines or power stages.
Q_g	3.6–5.3 nC - Low gate charge allows <10 ns turn-on delay and <13 ns rise time with 1 Ω driver, minimizing switching losses.
E_AS	2.5 mJ - Rated single-pulse avalanche energy supports robustness against inductive kickback in relay and solenoid drive.

Pinout & Package

SQ2308FES-T1_GE3 is packaged in SOT-23 (TO-236), a surface-mount, 3-lead plastic package with 1" × 1" FR-4 PCB thermal reference. Dimensions: 2.80–3.04 mm length, 2.10–2.64 mm width, 0.89–1.12 mm height. Drain is internally connected to the exposed pad (foot) for enhanced thermal conduction.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting logic-level input; requires ≤±20 V rating and exhibits R_g = 2.9–9 Ω for predictable drive timing.
2 (S)	Source	Reference node for gate drive and current return path; tied to system ground or low-side switch common point.
3 (D)	Drain	High-side output terminal; electrically and thermally connected to the exposed drain foot for PCB heat sinking.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including temperature cycling, HTRB, and ESD per JESD47, ensuring reliability in harsh environments.
100 % R_g and UIS tested	Every unit screened for gate resistance consistency and unclamped inductive switching survival-critical for safety-critical load switching.
TrenchFET® architecture	Delivers lower R_DS(on) per die area than planar MOSFETs, enabling smaller footprint without sacrificing current capability.
Body diode t_rr = 13–26 ns	Fast reverse recovery minimizes shoot-through risk and power loss during synchronous rectification in DC-DC converters.
Drain-foot thermal path	R_thJF = 80 °C/W provides direct thermal conduction from junction to PCB copper, improving power density over R_thJA-only designs.

Applications

Automotive Body Control Module	Low-Voltage DC-DC Converter
Use Scenario: Switching power to door locks, seat positioners, and interior lighting in 12 V/24 V vehicle architectures. IC Role / Device Role / Timing Role: Low-side load switch controlled by MCU GPIO, operating at ≤10 kHz duty-cycled pulses. Use Value: AEC-Q101 qualification and 175 °C rating ensure uninterrupted function in engine bay-adjacent BCMs; R_DS(on) < 0.164 Ω limits self-heating during sustained 2 A loads.	Use Scenario: Synchronous rectifier in 5 V/3.3 V buck converters powering infotainment SoCs and ADAS sensors. IC Role / Device Role / Timing Role: High-efficiency freewheeling switch replacing Schottky diodes, driven complementarily with main FET. Use Value: Low Q_g and fast t_r/t_f reduce switching loss; body diode V_SD ≤ 1.2 V and t_rr ≤ 26 ns minimize conduction and recovery loss at 500 kHz–1 MHz.
Engine Management Sensor Biasing	Industrial PLC Digital Output
Use Scenario: Providing regulated bias current to oxygen sensors, knock sensors, and MAP sensors in hot under-hood locations. IC Role / Device Role / Timing Role: Constant-current source or precision on/off switch, operating continuously at ambient up to 125 °C. Use Value: Stable R_DS(on) up to 175 °C and low IDSS (<50 μA at 125 °C) prevent drift or leakage-induced measurement errors in critical analog front-ends.	Use Scenario: Solid-state replacement for electromechanical relays in 24 V digital output modules for factory automation. IC Role / Device Role / Timing Role: High-side or low-side switching element driving solenoids, indicators, and small actuators. Use Value: 60 V V_DS withstands 24 V system transients (ISO 7637-2 Pulse 1/2a); E_AS = 2.5 mJ absorbs inductive energy without external snubbers.

Automotive Body Control Module

Low-Voltage DC-DC Converter

Use Scenario: Switching power to door locks, seat positioners, and interior lighting in 12 V/24 V vehicle architectures.

IC Role / Device Role / Timing Role: Low-side load switch controlled by MCU GPIO, operating at ≤10 kHz duty-cycled pulses.

Use Value: AEC-Q101 qualification and 175 °C rating ensure uninterrupted function in engine bay-adjacent BCMs; R_DS(on) < 0.164 Ω limits self-heating during sustained 2 A loads.

Use Scenario: Synchronous rectifier in 5 V/3.3 V buck converters powering infotainment SoCs and ADAS sensors.

IC Role / Device Role / Timing Role: High-efficiency freewheeling switch replacing Schottky diodes, driven complementarily with main FET.

Use Value: Low Q_g and fast t_r/t_f reduce switching loss; body diode V_SD ≤ 1.2 V and t_rr ≤ 26 ns minimize conduction and recovery loss at 500 kHz–1 MHz.

Engine Management Sensor Biasing

Industrial PLC Digital Output

Use Scenario: Providing regulated bias current to oxygen sensors, knock sensors, and MAP sensors in hot under-hood locations.

IC Role / Device Role / Timing Role: Constant-current source or precision on/off switch, operating continuously at ambient up to 125 °C.

Use Value: Stable R_DS(on) up to 175 °C and low IDSS (<50 μA at 125 °C) prevent drift or leakage-induced measurement errors in critical analog front-ends.

Use Scenario: Solid-state replacement for electromechanical relays in 24 V digital output modules for factory automation.

IC Role / Device Role / Timing Role: High-side or low-side switching element driving solenoids, indicators, and small actuators.

Use Value: 60 V V_DS withstands 24 V system transients (ISO 7637-2 Pulse 1/2a); E_AS = 2.5 mJ absorbs inductive energy without external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053UW-7	R_DS(on) = 0.125 Ω @ 10 V, but only rated to 150 °C TJ and not AEC-Q101 qualified.	Lacks automotive qualification; suitable for industrial/commercial 24 V systems where extended temperature is not required.	Select DMN2053UW-7 only if AEC-Q101 compliance is unnecessary and lower R_DS(on) justifies trade-off in temperature margin.
IPD20N04S5L33ATMA1	40 V V_DS, 20 A I_D, TO-252 package; higher current but lower voltage rating and larger footprint.	Designed for higher-power 12 V automotive loads (e.g., radiator fans), incompatible with 60 V transient tolerance needs.	Choose IPD20N04S5L33ATMA1 only when >2.3 A current and PCB space allow TO-252; not a drop-in replacement for SQ2308FES-T1_GE3.

Compared with DMN2053UW-7 and IPD20N04S5L33ATMA1, SQ2308FES-T1_GE3 uniquely balances AEC-Q101 compliance, 60 V rating, SOT-23 compactness, and 175 °C operation-making it the only option among the three qualified for under-hood 24 V/42 V switching where space and temperature are constrained.

Availability

SQ2308FES-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, low-voltage DC-DC converters, and industrial PLC digital outputs requiring stable component supply across long production lifecycles.

Supply support for SQ2308FES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability, high-efficiency power solutions.

The SQ2308FES-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for space-constrained, high-temperature automotive subsystems demanding AEC-Q101 validation and robust transient immunity.

FAQ

Is SQ2308FES-T1_GE3 AEC-Q101 qualified?

Yes, SQ2308FES-T1_GE3 is fully AEC-Q101 qualified per the Vishay datasheet (S22-1022-Rev. A). It has undergone stress testing including temperature cycling, high-temperature reverse bias (HTRB), and unclamped inductive switching (UIS), confirming suitability for automotive applications such as body electronics and engine management systems.

What is the maximum continuous drain current for SQ2308FES-T1_GE3 at 125 °C case temperature?

The maximum continuous drain current for SQ2308FES-T1_GE3 is 1.3 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package and must be applied in thermal design calculations for sustained operation in hot environments.

Does SQ2308FES-T1_GE3 have a specified gate charge value, and why does it matter?

Yes, SQ2308FES-T1_GE3 has a total gate charge (Q_g) of 3.6–5.3 nC at V_GS = 10 V. This parameter directly determines switching speed and driver power requirements: lower Q_g enables faster turn-on/turn-off with minimal gate driver effort, reducing switching losses in high-frequency DC-DC converters and PWM-controlled loads.

Can SQ2308FES-T1_GE3 be used as a synchronous rectifier in a 500 kHz buck converter?

Yes, SQ2308FES-T1_GE3 is suitable as a synchronous rectifier in 500 kHz buck converters. Its low Q_g (3.6–5.3 nC), fast turn-on delay (≤6 ns), rise time (≤13 ns), and body diode t_rr (13–26 ns) support efficient operation at this frequency. The 0.164 Ω R_DS(on) at 4.5 V also ensures compatibility with typical controller gate-drive voltages.

What is the thermal resistance from junction to ambient (R_thJA) for SQ2308FES-T1_GE3, and how is it measured?

SQ2308FES-T1_GE3 has R_thJA = 120 °C/W when mounted on a 1" × 1" FR-4 PCB with 2 oz. copper on both sides. This value is measured under standardized JEDEC conditions and serves as a baseline for thermal modeling; actual performance depends on PCB layout, copper area, and airflow, so designers should verify with thermal simulation or testing.

SQ2308FES-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 2.3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5.3 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 205 pF @ 30 V

FET Feature:: -

Power Dissipation (Max):: 2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2308FES-T1_GE3 FAQ

1.How can I place an order for SQ2308FES-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2308FES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2308FES-T1_GE3 reliable?

The price and inventory of SQ2308FES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2308FES-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2308FES-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2308FES-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2308FES-T1_GE3?

SQ2308FES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2308FES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2308FES-T1_GE3?

For technical support, including SQ2308FES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2308FES-T1_GE3 requirements.

6.How does Aetrix verify that SQ2308FES-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2308FES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2308FES-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2308FES-T1_GE3?

All SQ2308FES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2308FES-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2308FES-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2308FES-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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