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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2309CES-T1_GE3

Name: SQ2309CES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2309CES-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2309CES-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2309CES-T1_GE3.pdf

Description:: AUTOMOTIVE P-CHANNEL 60 V (D-S)

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Product details

Overview

SQ2309CES-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET designed for high-side load switching in 12 V and 24 V systems. It features -60 V V_DS, 0.335 Ω R_DS(on) at V_GS = -10 V, AEC-Q101 qualification, and operation up to +175 °C junction temperature - enabling use in engine control modules and body electronics.

For engineers reviewing the SQ2309CES-T1_GE3 datasheet, SQ2309CES-T1_GE3 pinout, SQ2309CES-T1_GE3 application, or SQ2309CES-T1_GE3 equivalent, key selection criteria include its -1.7 A continuous drain current at 25 °C, SOT-23 package thermal resistance (R_thJA = 166 °C/W), and guaranteed 100 % UIS testing for robustness in automotive transients.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance and fast switching in a thermally constrained SOT-23 footprint. Its gate threshold voltage range (-1.5 V to -2.5 V) ensures reliable turn-on with standard logic-level drive, while the integrated body diode supports reverse-current protection in bidirectional power paths.

The MOSFET is characterized for operation across -55 °C to +175 °C, with R_DS(on) specified at multiple temperatures and gate voltages (-10 V and -4.5 V). Dynamic parameters including Q_g = 5.5–8.5 nC and C_iss = 211–265 pF support accurate gate driver sizing for PWM-controlled loads.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Withstands automotive load-dump transients up to ISO 7637-2 Pulse 5a without clamping.
R_DS(on) max @ V_GS = -10 V	0.335 Ω - Enables ≤0.6 W conduction loss at -1.25 A, critical for thermally limited PCB layouts.
I_D continuous @ T_C = 25 °C	-1.7 A - Supports moderate-power loads such as LED drivers and solenoid pre-charge circuits.
T_J max	+175 °C - Qualified for under-hood applications including transmission control units and battery management subsystems.
Q_g total	5.5–8.5 nC - Determines minimum gate driver peak current requirement (~100 mA for 100 ns rise time).
AEC-Q101 qualified	Yes - Validated for automotive reliability per stress test conditions including HTGB, HTRB, and TC1000 cycles.
R_thJA	166 °C/W - Defines maximum power dissipation (2 W at 25 °C ambient) on standard 1"² FR4 PCB with 2 oz copper.

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3 terminals: compact 2.8 mm × 2.1 mm footprint, 1.12 mm max height, and gull-wing leads for automated assembly. Thermal pad not present; heat transfer occurs via leads and PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Controls channel conduction; requires -10 V for full enhancement; threshold range -1.5 V to -2.5 V enables 3.3 V/5 V logic compatibility with pull-up biasing.
2 (S)	Source	Common reference node for gate drive and load return; tied to system ground or higher potential in high-side configuration.
3 (D)	Drain	High-voltage input terminal; connects to battery rail in high-side switch; carries full load current and avalanche energy during fault events.

Key Features

Feature	Design Value
TrenchFET® process	Delivers optimized R_DS(on) × Q_g figure-of-merit for efficient switching in space-constrained automotive modules.
100 % UIS tested	Each unit validated for single-pulse avalanche energy (E_AS = 2.3 mJ), ensuring survivability during inductive load turn-off.
Body diode t_rr	23–46 ns reverse recovery time - minimizes switching losses and voltage overshoot when used in synchronous rectification or freewheeling paths.
V_GS = ±20 V rating	Supports robust gate drive design with margin against ESD and transient coupling in noisy vehicle environments.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per doc#99912.

Applications

Engine Control Unit (ECU) Power Sequencing	Automotive LED Headlamp Dimming
Use Scenario: Controlled power-up of microcontroller peripherals after main supply stabilization. IC Role / Device Role / Timing Role: High-side switch enabling timed enable/disable of sensor power rails using MCU GPIO. Use Value: -1.7 A rating and +175 °C operation ensure stable sequencing across cold-crank to hot-soak conditions.	Use Scenario: PWM-driven current regulation for adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Low-side or high-side current path switch synchronized with MCU timer outputs. Use Value: Fast t_r/t_f (9–14 ns) and low Q_gd (1.3 nC) minimize dead-time distortion and improve dimming linearity.
Body Control Module (BCM) Window Lift Driver	12 V Battery Disconnect Protection
Use Scenario: Bidirectional motor control for power window actuators with overcurrent foldback. IC Role / Device Role / Timing Role: Half-bridge high-side element paired with N-channel low-side MOSFET. Use Value: Integrated body diode with V_SD = -0.85 V supports regenerative braking without external diodes.	Use Scenario: Isolation of auxiliary battery from starter circuit during cranking to prevent brownout. IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protected high-side disconnect switch. Use Value: -60 V V_DS and AEC-Q101 qualification meet ISO 16750-2 requirements for load-dump immunity.

Engine Control Unit (ECU) Power Sequencing

Automotive LED Headlamp Dimming

Use Scenario: Controlled power-up of microcontroller peripherals after main supply stabilization.

IC Role / Device Role / Timing Role: High-side switch enabling timed enable/disable of sensor power rails using MCU GPIO.

Use Value: -1.7 A rating and +175 °C operation ensure stable sequencing across cold-crank to hot-soak conditions.

Use Scenario: PWM-driven current regulation for adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: Low-side or high-side current path switch synchronized with MCU timer outputs.

Use Value: Fast t_r/t_f (9–14 ns) and low Q_gd (1.3 nC) minimize dead-time distortion and improve dimming linearity.

Body Control Module (BCM) Window Lift Driver

12 V Battery Disconnect Protection

Use Scenario: Bidirectional motor control for power window actuators with overcurrent foldback.

IC Role / Device Role / Timing Role: Half-bridge high-side element paired with N-channel low-side MOSFET.

Use Value: Integrated body diode with V_SD = -0.85 V supports regenerative braking without external diodes.

Use Scenario: Isolation of auxiliary battery from starter circuit during cranking to prevent brownout.

IC Role / Device Role / Timing Role: Reverse-polarity and overvoltage protected high-side disconnect switch.

Use Value: -60 V V_DS and AEC-Q101 qualification meet ISO 16750-2 requirements for load-dump immunity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2053LFG-7	R_DS(on) = 0.28 Ω @ -4.5 V; SOT-23 package; no AEC-Q101 qualification.	Targeted at industrial/commercial DC-DC and power management, not automotive.	Select if AEC-Q101 is not required and lower R_DS(on) at logic-level drive is prioritized.
SI2309DS-T1-BE3	R_DS(on) = 0.35 Ω @ -4.5 V; same SOT-23 footprint; AEC-Q101 qualified but rated only to +150 °C.	Valid for cabin electronics and infotainment where junction temperature stays below 150 °C.	Choose when thermal margin is relaxed and cost sensitivity outweighs extended temperature capability.

Compared with DMN2053LFG-7 and SI2309DS-T1-BE3, SQ2309CES-T1_GE3 provides superior high-temperature operation (+175 °C), tighter R_DS(on) distribution at -10 V, and full automotive transient immunity validation - making it the preferred choice for under-hood and safety-critical functions.

Availability

SQ2309CES-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, body control modules, and LED lighting systems requiring stable component supply across automotive production lifecycles.

Supply support for SQ2309CES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with focus on power efficiency, reliability, and miniaturization.

The SQ2309CES-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel MOSFET family, engineered specifically for high-reliability load switching in harsh-temperature vehicle subsystems.

FAQ

What is the maximum continuous drain current rating for SQ2309CES-T1_GE3 at 125 °C case temperature?

The SQ2309CES-T1_GE3 has a continuous drain current rating of -1 A at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under sustained high-temperature operation, and must be applied when designing for under-hood environments where heatsinking is minimal.

Does SQ2309CES-T1_GE3 include integrated ESD protection on the gate terminal?

The SQ2309CES-T1_GE3 does not specify integrated gate ESD protection in its datasheet. Its gate-source voltage rating is ±20 V, and it undergoes 100 % UIS and R_g testing, but no human-body-model (HBM) or charged-device-model (CDM) ESD ratings are published. External gate protection is recommended in high-noise automotive harness environments.

Can SQ2309CES-T1_GE3 be used in a high-side switch configuration with 3.3 V logic-level control?

Yes - SQ2309CES-T1_GE3 can be driven from a 3.3 V microcontroller output when configured as a high-side switch, provided the gate is pulled to the source potential via a resistor and driven low to turn on. Its V_GS(th) range (-1.5 V to -2.5 V) ensures turn-on with modest negative gate-source differential, though R_DS(on) will be higher than at -10 V (0.500 Ω max at -4.5 V).

What is the typical body diode forward voltage of SQ2309CES-T1_GE3 at -1.5 A source current?

The typical body diode forward voltage (V_SD) of SQ2309CES-T1_GE3 is -0.85 V at I_F = -1.5 A and V_GS = 0 V, per the "Source-Drain Diode Ratings and Characteristics" section. This value is measured at T_A = 25 °C and supports accurate loss estimation in freewheeling or reverse-current paths.

Is SQ2309CES-T1_GE3 compatible with lead-free reflow soldering profiles?

Yes - SQ2309CES-T1_GE3 is marked "Lead (Pb)-free and halogen-free" and qualified for standard JEDEC J-STD-020D reflow profiles, including peak temperatures up to 260 °C. The SOT-23 package construction and termination finish meet IPC/JEDEC standards for Pb-free assembly without risk of delamination or voiding.

SQ2309CES-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 370mOhm @ 1.25A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 265 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2309CES-T1_GE3 FAQ

1.How can I place an order for SQ2309CES-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2309CES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2309CES-T1_GE3 reliable?

The price and inventory of SQ2309CES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2309CES-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2309CES-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2309CES-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2309CES-T1_GE3?

SQ2309CES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2309CES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2309CES-T1_GE3?

For technical support, including SQ2309CES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2309CES-T1_GE3 requirements.

6.How does Aetrix verify that SQ2309CES-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2309CES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2309CES-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2309CES-T1_GE3?

All SQ2309CES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2309CES-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2309CES-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2309CES-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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