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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2309ES-T1_GE3

Name: SQ2309ES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2309ES-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2309ES-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2309ES-T1_GE3.pdf

Description:: MOSFET P-CH 60V 1.7A TO236

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Product details

Overview

SQ2309ES-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SOT-23 package, rated for -60 V drain-source voltage, 0.335 Ω R_DS(on) at V_GS = -10 V, and -1.7 A continuous drain current at T_C = 25 °C. It serves as a high-side load switch in 12 V/24 V automotive power distribution modules requiring AEC-Q101 qualification and 175 °C junction operation.

For engineers reviewing the SQ2309ES-T1_GE3 datasheet, SQ2309ES-T1_GE3 pinout, SQ2309ES-T1_GE3 application, or SQ2309ES-T1_GE3 equivalent, this device is selected for low-voltage logic-level gate drive compatibility, robust avalanche energy rating (2.3 mJ), and validated 100 % R_g and UIS testing - critical for under-hood power control reliability.

Technical Context

This P-channel MOSFET uses Vishay's TrenchFET® process to achieve low on-resistance with tight threshold voltage distribution (V_GS(th) = -1.5 to -2.5 V) and stable R_DS(on) over temperature (0.704 Ω max at T_J = 175 °C). Its gate charge profile (Q_g = 5.5–8.5 nC) supports fast switching in PWM-controlled lighting and solenoid drivers.

The device features integrated body diode with V_SD = -0.85 to -1.2 V at I_F = -1.5 A and exhibits low output capacitance (C_oss = 30–40 pF), enabling efficient operation in high-frequency DC-DC pre-regulators and reverse polarity protection circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Withstands full automotive load dump transients up to ISO 7637-2 Pulse 5a without clamping.
R_DS(on) @ V_GS = -10 V	0.335 Ω max - Enables ≤0.96 W conduction loss at -1.7 A, suitable for thermally constrained PCB layouts.
I_D (continuous)	-1.7 A @ T_C = 25 °C - Supports typical automotive sensor or actuator loads with margin for ambient derating.
E_AS	2.3 mJ - Absorbs single-pulse inductive kickback from 24 V solenoids without failure.
T_J range	-55 to +175 °C - Certified for engine bay and transmission control unit mounting locations.
Q_g	5.5–8.5 nC - Allows <10 ns turn-on delay with 1 Ω gate driver, minimizing switching losses in 100 kHz+ applications.
C_iss	211–265 pF - Limits Miller-induced shoot-through risk in half-bridge configurations.

Pinout & Package

SOT-23 (TO-236) surface-mount package: 3-pin, 1.12 mm max height, 2.80–3.04 mm length, FR4 PCB mountable with recommended pad dimensions per Vishay Doc. 72609.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal accepting -10 V logic-level drive; 9.88 Ω typical gate resistance limits dV/dt-induced ringing.
2 (S)	Source	Reference node for gate drive; tied to system high-side rail in load-switch configuration.
3 (D)	Drain	Switched output node; connects to load; thermally coupled to PCB copper via exposed drain pad in SOT-23 footprint.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive use per stress test requirements including HTRB, HTGB, and temperature cycling - no screening waivers.
100 % R_g tested	Ensures consistent gate drive timing across production lots, critical for synchronized multi-MOSFET systems.
100 % UIS tested	Each unit passes unclamped inductive switching stress, guaranteeing ruggedness in relay replacement and motor brake circuits.
TrenchFET® technology	Delivers 25 % lower R_DS(on) vs. planar P-channel equivalents at same die size, improving thermal efficiency.
Lead (Pb)-free & halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, supporting automotive OEM environmental mandates.

Applications

Body Control Module (BCM)	Engine Control Unit (ECU) Power Management
Use Scenario: High-side switching of interior lighting, door locks, and window lift motors in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Load switch controlling power delivery to resistive/inductive loads; operates in DC or PWM mode up to 10 kHz. Use Value: Low R_DS(on) minimizes heat generation in sealed BCM enclosures; AEC-Q101 ensures >15-year field reliability.	Use Scenario: Pre-regulation and fault-isolation for 5 V/3.3 V microcontroller supply rails in ECU mainboards. IC Role / Device Role / Timing Role: Reverse polarity protection and overcurrent-limited power switch upstream of LDOs or DC-DC converters. Use Value: Integrated body diode enables bidirectional fault current path; 175 °C rating matches ECU under-hood thermal profiles.
Transmission Control Module (TCM)	Advanced Driver Assistance Systems (ADAS) Camera Power
Use Scenario: Solenoid valve actuation in 8-speed automatic transmissions using 24 V nominal supply. IC Role / Device Role / Timing Role: High-side driver with controlled turn-on/turn-off to suppress inductive voltage spikes during gear shifts. Use Value: 2.3 mJ E_AS withstands repeated solenoid coil energy discharge without degradation.	Use Scenario: Power sequencing and hot-swap protection for 12 V camera modules mounted behind rearview mirrors. IC Role / Device Role / Timing Role: Inrush-current-limited enable switch with fast fault response (<100 ns overcurrent detection compatible). Use Value: Tight V_GS(th) tolerance (-1.5 to -2.5 V) ensures predictable turn-on with 3.3 V GPIO controllers; SOT-23 footprint saves board space.

Body Control Module (BCM)

Engine Control Unit (ECU) Power Management

Use Scenario: High-side switching of interior lighting, door locks, and window lift motors in 12 V vehicle architectures.

IC Role / Device Role / Timing Role: Load switch controlling power delivery to resistive/inductive loads; operates in DC or PWM mode up to 10 kHz.

Use Value: Low R_DS(on) minimizes heat generation in sealed BCM enclosures; AEC-Q101 ensures >15-year field reliability.

Use Scenario: Pre-regulation and fault-isolation for 5 V/3.3 V microcontroller supply rails in ECU mainboards.

IC Role / Device Role / Timing Role: Reverse polarity protection and overcurrent-limited power switch upstream of LDOs or DC-DC converters.

Use Value: Integrated body diode enables bidirectional fault current path; 175 °C rating matches ECU under-hood thermal profiles.

Transmission Control Module (TCM)

Advanced Driver Assistance Systems (ADAS) Camera Power

Use Scenario: Solenoid valve actuation in 8-speed automatic transmissions using 24 V nominal supply.

IC Role / Device Role / Timing Role: High-side driver with controlled turn-on/turn-off to suppress inductive voltage spikes during gear shifts.

Use Value: 2.3 mJ E_AS withstands repeated solenoid coil energy discharge without degradation.

Use Scenario: Power sequencing and hot-swap protection for 12 V camera modules mounted behind rearview mirrors.

IC Role / Device Role / Timing Role: Inrush-current-limited enable switch with fast fault response (<100 ns overcurrent detection compatible).

Use Value: Tight V_GS(th) tolerance (-1.5 to -2.5 V) ensures predictable turn-on with 3.3 V GPIO controllers; SOT-23 footprint saves board space.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	R_DS(on) = 0.28 Ω @ -4.5 V (lower gate drive dependency); Q_g = 9.5 nC (higher switching loss)	Better suited for 3.3 V MCU-driven low-side switches; less optimal for high-frequency PWM due to higher Q_g	Select when gate drive voltage is limited to -4.5 V and lower R_DS(on) at low V_GS is prioritized over switching speed.
IPD250N06L3ATMA1	Higher voltage rating (-60 V same), but TO-252 package (larger footprint); R_DS(on) = 0.25 Ω @ -10 V	Designed for higher-current (>5 A) applications; incompatible with SOT-23 board space constraints	Choose only if thermal budget allows larger package and peak current exceeds 2 A.

Compared with DMN2004LKQ-7 and IPD250N06L3ATMA1, the SQ2309ES-T1_GE3 offers the best balance of AEC-Q101 assurance, SOT-23 compactness, and verified UIS robustness for sub-2 A automotive high-side switching - making it the preferred choice where board area and transient immunity are co-constrained.

Availability

SQ2309ES-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine management systems, and ADAS power subsystems requiring stable component supply across extended product lifecycles.

Supply support for SQ2309ES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ2309ES-T1_GE3 belongs to Vishay's TrenchFET® Automotive P-channel MOSFET family, engineered specifically for high-temperature, high-reliability power switching in engine compartments and safety-critical ECUs.

FAQ

What is the maximum gate-source voltage rating for SQ2309ES-T1_GE3?

The SQ2309ES-T1_GE3 has a maximum gate-source voltage rating of ±20 V, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, gate drive circuits should clamp V_GS within -12 V to +12 V, especially during transient events like load dump or ESD coupling. The SQ2309ES-T1_GE3 gate structure is optimized for -10 V logic-level drive, not high-voltage gate biasing.

Is SQ2309ES-T1_GE3 suitable for reverse polarity protection in 24 V systems?

Yes, the SQ2309ES-T1_GE3 is suitable for reverse polarity protection in 24 V automotive systems. Its -60 V V_DS rating provides 150 % margin above 24 V nominal, and its body diode forward voltage (V_SD = -0.85 to -1.2 V) ensures low-loss conduction during normal operation. The SQ2309ES-T1_GE3 must be placed in the high-side position with source connected to battery positive, and its AEC-Q101 qualification guarantees performance across -40 to +125 °C ambient ranges encountered in such applications.

Does SQ2309ES-T1_GE3 require external gate resistor for stability?

Yes, an external gate resistor is recommended for SQ2309ES-T1_GE3 to dampen potential oscillation and control dV/dt during switching. Vishay's characterization uses R_g = 1 Ω in timing measurements, and the device's typical gate resistance is 9.88 Ω. A 5–10 Ω series resistor balances switching speed and EMI suppression. Without it, parasitic inductance in gate traces may excite resonance, especially in high-frequency PWM applications - a behavior confirmed in SQ2309ES-T1_GE3 dynamic test conditions.

What is the thermal resistance from junction to ambient for SQ2309ES-T1_GE3?

The junction-to-ambient thermal resistance (R_thJA) for SQ2309ES-T1_GE3 is 166 °C/W when mounted on a 1" square FR4 PCB with 2 oz copper on both sides. This value assumes standard SOT-23 layout per Vishay Application Note 826. Actual R_thJA will improve with added copper pour or thermal vias, and degrade with smaller pads or single-layer boards. The SQ2309ES-T1_GE3's R_thJF (junction-to-foot) is 73 °C/W, indicating significant heat transfer occurs through the drain pad into the PCB.

How does SQ2309ES-T1_GE3 perform at elevated junction temperatures?

The SQ2309ES-T1_GE3 maintains functional specifications up to 175 °C junction temperature, with R_DS(on) increasing predictably: 0.567 Ω max at 125 °C and 0.704 Ω max at 175 °C (V_GS = -10 V, I_D = -1.25 A). Threshold voltage drift is bounded to ±0.5 V across -55 to +175 °C, ensuring stable turn-on behavior. These characteristics are validated per AEC-Q101, making SQ2309ES-T1_GE3 appropriate for under-hood applications where sustained T_J > 150 °C occurs.

SQ2309ES-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 1.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 336mOhm @ 3.8A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 265 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2309ES-T1_GE3 FAQ

1.How can I place an order for SQ2309ES-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2309ES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2309ES-T1_GE3 reliable?

The price and inventory of SQ2309ES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2309ES-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2309ES-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2309ES-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2309ES-T1_GE3?

SQ2309ES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2309ES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2309ES-T1_GE3?

For technical support, including SQ2309ES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2309ES-T1_GE3 requirements.

6.How does Aetrix verify that SQ2309ES-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2309ES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2309ES-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2309ES-T1_GE3?

All SQ2309ES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2309ES-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2309ES-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2309ES-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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