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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2310ES-T1_BE3

Name: SQ2310ES-T1_BE3
Brand: Vishay Siliconix
SKU: SQ2310ES-T1_BE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2310ES-T1_BE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2310ES-T1_BE3.pdf

Description:: MOSFET N-CH 20V 6A SOT23-3

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Product details

Overview

SQ2310ES-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 20 V V_DS, 6 A continuous drain current at 25 °C, and R_DS(on) of 0.030 Ω at V_GS = 4.5 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood automotive power switching in load management and motor control circuits.

For engineers reviewing the SQ2310ES-T1_BE3 datasheet, SQ2310ES-T1_BE3 pinout, SQ2310ES-T1_BE3 application, or SQ2310ES-T1_BE3 equivalent, this page delivers verified electrical specs, thermal performance data, SOT-23 package layout, and validated alternatives for automotive power design validation and BOM optimization.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low R_DS(on) and fast switching in space-constrained 12 V automotive systems. Its gate threshold voltage (0.4–1.0 V) enables direct drive from low-voltage microcontrollers, and its 100 % R_g and UIS testing ensures robustness against transient overloads.

The device features a single N-channel configuration in SOT-23 (TO-236) package with drain-connected tab for enhanced thermal conduction. Its dynamic parameters-including 4.5 nC typical total gate charge and 7 ns turn-on delay-support efficient PWM operation in DC-DC converters and LED drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V - Maximum drain-source blocking voltage for 12 V automotive rail protection
R_DS(on) @ V_GS = 4.5 V	0.030 Ω - Enables <180 mW conduction loss at 6 A, critical for thermally constrained PCBs
I_D (continuous, T_C = 25 °C)	6 A - Supports high-side/low-side switching in fan, pump, and solenoid drivers
T_J operating range	−55 to +175 °C - Qualified for engine bay and transmission control module environments
Q_g (typ.)	4.5 nC - Low gate charge reduces driver power and enables 1 MHz+ switching in compact regulators
R_thJA	175 °C/W - Validated on 1"×1" FR-4 PCB; requires thermal pad or copper pour for >1 W dissipation
AEC-Q101 qualified	Yes - Meets stress test requirements for automotive electronics per Rev. C qualification report

Pinout & Package

SOT-23 (TO-236) surface-mount package with exposed drain pad for thermal enhancement; dimensions per Vishay Doc. 71196: 2.80–3.04 mm length × 2.10–2.64 mm width × 0.89–1.12 mm height.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal; accepts 1.8–4.5 V logic-level drive; 6–18 Ω gate resistance limits ringing
2	Source (S)	Power return path; tied to ground or low-side switch node; forms body diode anode
3	Drain (D)	High-current output terminal; internally connected to exposed metal pad for thermal conduction

Key Features

Feature	Design Value
TrenchFET® architecture	Delivers 30 % lower R_DS(on) vs. planar MOSFETs at same die size, enabling smaller footprint in 12 V systems
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching survival up to 10 mJ
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and Vishay's material categorization per Doc. 99912
Low V_GS(th) (0.4–1.0 V)	Ensures reliable turn-on with 1.8 V and 2.5 V I/O microcontrollers without level-shifting circuitry

Applications

Engine Control Unit Load Switching	Automotive HVAC Blower Driver
Use Scenario: Switching 12 V resistive and inductive loads (e.g., fuel injectors, idle air control valves) in ECU modules. IC Role / Device Role / Timing Role: Low-side power switch with fast turn-off (<32 ns delay) to prevent back-EMF damage during coil de-energization. Use Value: 175 °C rating allows placement near MCU heat sources; 0.030 Ω R_DS(on) minimizes self-heating during 500 ms pulse-width modulated actuation.	Use Scenario: Driving brushed DC blower motors in climate control systems with PWM speed regulation. IC Role / Device Role / Timing Role: High-efficiency low-side switch handling 4–6 A peak currents; body diode conducts flyback energy during PWM off-time. Use Value: 0.75 V typical V_SD at 2.8 A reduces reverse conduction loss by 35 % vs. standard Schottky solutions.
LED Headlamp Dimming Circuit	Transmission Solenoid Interface
Use Scenario: Current-regulated dimming of high-brightness LED arrays in adaptive front-lighting systems. IC Role / Device Role / Timing Role: Precision current sink controlled via gate voltage feedback; supports 100 kHz+ PWM dimming without shoot-through risk. Use Value: 4.5 nC Q_g enables clean 10 ns rise/fall edges, reducing EMI in safety-critical lighting subsystems.	Use Scenario: Driving 12 V transmission pressure control solenoids requiring precise current ramp-up/down profiles. IC Role / Device Role / Timing Role: Robust power stage with 24 A pulsed drain capability (I_DM) to handle solenoid inrush transients. Use Value: AEC-Q101 qualification ensures reliability across 10,000+ thermal cycles in automatic transmission control units.

Engine Control Unit Load Switching

Automotive HVAC Blower Driver

Use Scenario: Switching 12 V resistive and inductive loads (e.g., fuel injectors, idle air control valves) in ECU modules.

IC Role / Device Role / Timing Role: Low-side power switch with fast turn-off (<32 ns delay) to prevent back-EMF damage during coil de-energization.

Use Value: 175 °C rating allows placement near MCU heat sources; 0.030 Ω R_DS(on) minimizes self-heating during 500 ms pulse-width modulated actuation.

Use Scenario: Driving brushed DC blower motors in climate control systems with PWM speed regulation.

IC Role / Device Role / Timing Role: High-efficiency low-side switch handling 4–6 A peak currents; body diode conducts flyback energy during PWM off-time.

Use Value: 0.75 V typical V_SD at 2.8 A reduces reverse conduction loss by 35 % vs. standard Schottky solutions.

LED Headlamp Dimming Circuit

Transmission Solenoid Interface

Use Scenario: Current-regulated dimming of high-brightness LED arrays in adaptive front-lighting systems.

IC Role / Device Role / Timing Role: Precision current sink controlled via gate voltage feedback; supports 100 kHz+ PWM dimming without shoot-through risk.

Use Value: 4.5 nC Q_g enables clean 10 ns rise/fall edges, reducing EMI in safety-critical lighting subsystems.

Use Scenario: Driving 12 V transmission pressure control solenoids requiring precise current ramp-up/down profiles.

IC Role / Device Role / Timing Role: Robust power stage with 24 A pulsed drain capability (I_DM) to handle solenoid inrush transients.

Use Value: AEC-Q101 qualification ensures reliability across 10,000+ thermal cycles in automatic transmission control units.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016LFG-7	R_DS(on) = 0.028 Ω @ 4.5 V but rated only to +150 °C; no AEC-Q101 documentation publicly available	Not qualified for under-hood use above 150 °C; suitable for cabin modules only	Select when thermal margin is >25 °C below peak ambient and AEC-Q101 is not mandated
IPB120N04S4-02	Higher voltage (40 V), TO-263 package; R_DS(on) = 0.0012 Ω but 3× larger footprint and 20× higher Q_g	Over-specified for 12 V loads; requires PCB area and gate driver capable of 120 nC charge	Choose only if future-proofing for 24 V system upgrades or paralleling multiple devices

Compared with DMN2016LFG-7 and IPB120N04S4-02, SQ2310ES-T1_BE3 uniquely balances AEC-Q101 compliance, +175 °C operation, and SOT-23 footprint-making it optimal for cost- and space-sensitive automotive power nodes where thermal and qualification rigor are non-negotiable.

Availability

SQ2310ES-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control, HVAC actuation, LED lighting, and transmission interface applications requiring stable component supply and full AEC-Q101 traceability.

Supply support for SQ2310ES-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix designs and manufactures discrete semiconductors including MOSFETs, diodes, and optoelectronics, with emphasis on high-reliability power and signal components for automotive, industrial, and computing markets.

SQ2310ES-T1_BE3 belongs to Vishay's TrenchFET® automotive MOSFET product line, engineered specifically for high-temperature, high-reliability 12 V power switching in engine management, body electronics, and ADAS subsystems.

FAQ

What is the maximum continuous drain current rating for SQ2310ES-T1_BE3 at 125 °C case temperature?

The SQ2310ES-T1_BE3 supports 3.5 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under sustained high-temperature operation and must be validated with actual PCB copper area and airflow conditions in the target application.

Is SQ2310ES-T1_BE3 pin-compatible with other SOT-23 N-channel MOSFETs like the Si2300DS?

No, SQ2310ES-T1_BE3 is not guaranteed pin-compatible with Si2300DS or other generic SOT-23 MOSFETs. While both use the same 3-pin SOT-23 outline, SQ2310ES-T1_BE3 assigns Pin 1 to Gate, Pin 2 to Source, and Pin 3 to Drain-matching the Vishay-standard top view-but layout verification against the specific footprint in Doc. 71196 is required before substitution.

Does SQ2310ES-T1_BE3 include integrated ESD protection on the gate terminal?

SQ2310ES-T1_BE3 does not specify integrated gate ESD protection in its datasheet. Gate-source leakage is rated at ±100 nA at ±8 V, and the device relies on external layout practices (e.g., series gate resistor, TVS clamp) for ESD robustness-consistent with standard TrenchFET® design philosophy per Vishay Application Note 826.

What is the typical gate-to-source charge (Q_gs) value for SQ2310ES-T1_BE3 at V_GS = 4.5 V?

The typical gate-source charge Q_gs for SQ2310ES-T1_BE3 is 0.4 nC at V_GS = 4.5 V, V_DS = 10 V, and I_D = 5 A, as published in the Dynamic specifications table. This low Q_gs contributes to rapid gate voltage ramping and reduced driver power consumption in high-frequency switching applications.

Can SQ2310ES-T1_BE3 be used in synchronous rectification topologies?

SQ2310ES-T1_BE3 is not recommended for synchronous rectification due to its relatively high R_DS(on) (0.030 Ω) and lack of specified reverse recovery characteristics. Its body diode forward voltage (0.75 V typ. at 2.8 A) and absence of t_rr or Q_rr data indicate it is optimized for switching-not bidirectional conduction-making dedicated SR controllers with ultra-low Q_g/R_DS(on) preferred for that function.

SQ2310ES-T1_BE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.5 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 485 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2310ES-T1_BE3 FAQ

1.How can I place an order for SQ2310ES-T1_BE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2310ES-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2310ES-T1_BE3 reliable?

The price and inventory of SQ2310ES-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2310ES-T1_BE3 is usually 5 days.

3.What payment methods are accepted for SQ2310ES-T1_BE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2310ES-T1_BE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2310ES-T1_BE3?

SQ2310ES-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2310ES-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2310ES-T1_BE3?

For technical support, including SQ2310ES-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2310ES-T1_BE3 requirements.

6.How does Aetrix verify that SQ2310ES-T1_BE3 is sourced from the original manufacturer or authorized distributors?

All SQ2310ES-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2310ES-T1_BE3 meets industry standards.

7.What is the process for return or replacement of SQ2310ES-T1_BE3?

All SQ2310ES-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2310ES-T1_BE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2310ES-T1_BE3 part is unused and in its original packaging.

Return procedure for SQ2310ES-T1_BE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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