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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2310ES-T1_GE3

Name: SQ2310ES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2310ES-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2310ES-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2310ES-T1_GE3.pdf

Description:: MOSFET N-CH 20V 6A TO236

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Product details

Overview

SQ2310ES-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® MOSFET with 20 V V_DS, 6 A continuous drain current at 25 °C, and R_DS(on) of 0.030 Ω at V_GS = 4.5 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101 for under-hood power switching in DC-DC converters and motor drivers.

For engineers reviewing the SQ2310ES-T1_GE3 datasheet, SQ2310ES-T1_GE3 pinout, SQ2310ES-T1_GE3 application, or SQ2310ES-T1_GE3 equivalent, this device supports high-reliability 12 V automotive systems requiring low R_DS(on), robust avalanche capability (E_AS = 5 mJ), and validated gate drive compatibility down to 1.8 V logic levels.

Technical Context

This MOSFET uses trench-gate silicon technology optimized for low on-resistance and fast switching in space-constrained SOT-23 packages. Its gate threshold voltage (V_GS(th) = 0.4–1.0 V) enables reliable turn-on with 1.8 V–4.5 V microcontroller outputs, while its 387 pF input capacitance (C_iss) and 4.5 nC typical total gate charge support efficient PWM control at frequencies up to several hundred kHz.

The device features a thermally enhanced SOT-23 footprint with drain-connected die pad for improved heat transfer to PCB copper. Its 75 °C/W junction-to-foot thermal resistance and 175 °C/W junction-to-ambient rating (on 1"² FR-4) define practical power handling limits in surface-mount automotive modules where forced airflow is absent.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Max	20 V - Supports 12 V nominal automotive bus with margin for load dump transients
R_DS(on) @ 4.5 V	0.030 Ω - Enables ≤ 720 mW conduction loss at 6 A, critical for thermally limited SOT-23 layouts
I_D Continuous	6 A @ T_C = 25 °C - Usable up to 3.5 A at 125 °C case temperature without derating violation
E_AS	5 mJ - Withstands single-pulse inductive energy from 10 A/0.1 mH loads without failure
T_J Range	−55 to +175 °C - Qualified for engine compartment placement per AEC-Q101 stress test requirements
Q_g Typ	4.5 nC - Allows fast switching with <12 ns turn-on delay using 1 Ω gate resistor and 4.5 V drive
C_iss	387 pF - Matches standard MCU GPIO drive strength; avoids excessive Miller-induced shoot-through risk

Pinout & Package

SOT-23 (TO-236) package with gull-wing leads, 1.02 mm max height, and drain-connected die pad for thermal conduction to PCB copper pour.

Pin/Terminal	Circuit Role	Design Meaning
1	Gate (G)	Control terminal accepting 1.8–8 V logic-level signals; 12 Ω max gate resistance ensures stable drive impedance
2	Source (S)	Power return path and reference node for gate drive; tied to system ground or low-side switch common
3	Drain (D)	High-current output node connected to load; internally bonded to exposed die pad for thermal dissipation

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive use with 100 % R_g and UIS testing per stress test plan
TrenchFET® architecture	Delivers 0.030 Ω R_DS(on) in SOT-23-30 % lower than planar equivalents at same voltage rating
Low V_GS(th)	0.4–1.0 V range ensures turn-on with 1.8 V I/O rails, eliminating need for level-shifting circuitry
Enhanced thermal performance	75 °C/W junction-to-foot resistance enables 0.6 W dissipation at 125 °C case without heatsink
Robust avalanche rating	10 A single-pulse avalanche current (I_AS) supports inductive load commutation without snubbers

Applications

Body Control Module Load Switching	Automotive LED Headlamp Driver
Use Scenario: Switching 12 V solenoids, relays, and HVAC actuators in BCMs with microcontroller GPIO direct drive. IC Role / Device Role / Timing Role: Low-side power switch controlled by 3.3 V or 1.8 V MCU outputs; handles 2–5 A pulsed loads. Use Value: Eliminates external level shifters due to 0.6 V typical V_GS(th); 0.030 Ω R_DS(on) reduces thermal stress in sealed BCM enclosures.	Use Scenario: Constant-current switching element in buck-based LED headlamp drivers operating from 9–16 V battery input. IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path; switches at 200–500 kHz. Use Value: 4.5 nC Q_g and 387 pF C_iss minimize switching losses; 175 °C rating supports operation near hot optics assemblies.
Start-Stop System Power Management	Electric Power Steering (EPS) Sensor Bias Supply
Use Scenario: High-efficiency 12 V auxiliary rail switch enabling/disabling subsystems during engine cranking events. IC Role / Device Role / Timing Role: Load switch isolating non-critical circuits (e.g., infotainment, displays) during voltage sag. Use Value: 20 V V_DS withstands 24 V jump-start transients; AEC-Q101 qualification ensures reliability over 15-year vehicle life.	Use Scenario: Precision bias switch for Hall-effect torque sensors in EPS modules requiring clean, noise-immune 5 V supply. IC Role / Device Role / Timing Role: Low-noise, low-leakage (±100 nA IGSS) switch controlling sensor V_CC path during sleep/wake cycles. Use Value: 0.1 μA max IDSS at 25 °C prevents sensor drift; 175 °C rating accommodates proximity to motor windings.

Body Control Module Load Switching

Automotive LED Headlamp Driver

Use Scenario: Switching 12 V solenoids, relays, and HVAC actuators in BCMs with microcontroller GPIO direct drive.

IC Role / Device Role / Timing Role: Low-side power switch controlled by 3.3 V or 1.8 V MCU outputs; handles 2–5 A pulsed loads.

Use Value: Eliminates external level shifters due to 0.6 V typical V_GS(th); 0.030 Ω R_DS(on) reduces thermal stress in sealed BCM enclosures.

Use Scenario: Constant-current switching element in buck-based LED headlamp drivers operating from 9–16 V battery input.

IC Role / Device Role / Timing Role: Synchronous rectifier and PWM-controlled current path; switches at 200–500 kHz.

Use Value: 4.5 nC Q_g and 387 pF C_iss minimize switching losses; 175 °C rating supports operation near hot optics assemblies.

Start-Stop System Power Management

Electric Power Steering (EPS) Sensor Bias Supply

Use Scenario: High-efficiency 12 V auxiliary rail switch enabling/disabling subsystems during engine cranking events.

IC Role / Device Role / Timing Role: Load switch isolating non-critical circuits (e.g., infotainment, displays) during voltage sag.

Use Value: 20 V V_DS withstands 24 V jump-start transients; AEC-Q101 qualification ensures reliability over 15-year vehicle life.

Use Scenario: Precision bias switch for Hall-effect torque sensors in EPS modules requiring clean, noise-immune 5 V supply.

IC Role / Device Role / Timing Role: Low-noise, low-leakage (±100 nA IGSS) switch controlling sensor V_CC path during sleep/wake cycles.

Use Value: 0.1 μA max IDSS at 25 °C prevents sensor drift; 175 °C rating accommodates proximity to motor windings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2016LFG-7	R_DS(on) = 0.022 Ω @ 4.5 V but rated only to 150 °C TJ; no AEC-Q101 documentation	Not qualified for under-hood automotive use; suitable for industrial DC-DC where ambient < 125 °C	Select when higher temperature rating is not required and lower R_DS(on) justifies cost premium
AO3414	R_DS(on) = 0.042 Ω @ 4.5 V; 150 °C max TJ; no UIS or R_g production test data published	Limited to cabin electronics or non-safety-critical functions; lacks automotive stress validation	Choose for cost-sensitive consumer or commercial designs where AEC-Q101 is not mandated

Compared with DMN2016LFG-7 and AO3414, SQ2310ES-T1_GE3 uniquely combines AEC-Q101 qualification, 175 °C operation, and 0.030 Ω R_DS(on) in SOT-23-making it the only option for thermally demanding, safety-compliant automotive power switching where board space prohibits SO-8 or PowerPAK packages.

Availability

SQ2310ES-T1_GE3 is available at Aetrix Electronics and suitable for automotive body control modules, LED lighting drivers, start-stop power management, and electric power steering sensor biasing requiring stable component supply across extended vehicle lifecycles.

Supply support for SQ2310ES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.

The SQ2310ES-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-temperature, high-reliability 12 V system switching where space, thermal constraints, and AEC-Q101 compliance are mandatory.

FAQ

What is the maximum continuous drain current for SQ2310ES-T1_GE3 at 125 °C case temperature?

The SQ2310ES-T1_GE3 supports 3.5 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under real-world PCB mounting conditions and must be observed to maintain reliability and avoid exceeding the 175 °C maximum junction temperature. The SQ2310ES-T1_GE3 datasheet confirms this value with no additional derating curves required for standard FR-4 layouts.

Is SQ2310ES-T1_GE3 suitable for 1.8 V logic-level gate drive?

Yes, SQ2310ES-T1_GE3 is fully compatible with 1.8 V logic-level gate drive due to its guaranteed V_GS(th) range of 0.4–1.0 V and R_DS(on) = 0.038 Ω at V_GS = 1.8 V (ID = 3.6 A). This allows direct interfacing with modern low-voltage MCUs without level-shifting circuitry. The SQ2310ES-T1_GE3 specification sheet explicitly validates operation down to 1.8 V in both static and dynamic parameters.

Does SQ2310ES-T1_GE3 have integrated avalanche ruggedness?

Yes, SQ2310ES-T1_GE3 is characterized for single-pulse avalanche with I_AS = 10 A (L = 0.1 mH) and E_AS = 5 mJ. These values are production-tested per AEC-Q101 requirements and documented in the Absolute Maximum Ratings section. The SQ2310ES-T1_GE3 datasheet confirms that all units undergo 100 % UIS testing, making it suitable for inductive load switching without external snubbers in automotive applications.

What is the thermal resistance from junction to ambient for SQ2310ES-T1_GE3 on a standard PCB?

The junction-to-ambient thermal resistance (R_thJA) for SQ2310ES-T1_GE3 is 175 °C/W when mounted on a 1" square FR-4 PCB with 2 oz copper on both sides. This value is measured per JEDEC standards and applies to the standard SOT-23 footprint defined in Vishay document 71196. The SQ2310ES-T1_GE3 thermal model assumes no additional heatsinking, and actual performance may improve with copper pour optimization.

How does the gate charge of SQ2310ES-T1_GE3 impact switching efficiency in PWM applications?

The SQ2310ES-T1_GE3 has a typical total gate charge (Q_g) of 4.5 nC at V_GS = 4.5 V, enabling fast, low-loss switching with minimal driver power consumption. At 200 kHz PWM frequency and 4.5 V gate drive, this translates to ~0.4 mW gate drive loss-negligible versus conduction and switching losses. The SQ2310ES-T1_GE3 datasheet provides Q_g, Q_gs, and Q_gd values to support accurate loss modeling in buck or half-bridge topologies.

SQ2310ES-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 30mOhm @ 5A, 4.5V

Vgs(th) (Max) @ Id:: 1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 8.5 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 485 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 2W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2310ES-T1_GE3 FAQ

1.How can I place an order for SQ2310ES-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2310ES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2310ES-T1_GE3 reliable?

The price and inventory of SQ2310ES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2310ES-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2310ES-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2310ES-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2310ES-T1_GE3?

SQ2310ES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2310ES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2310ES-T1_GE3?

For technical support, including SQ2310ES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2310ES-T1_GE3 requirements.

6.How does Aetrix verify that SQ2310ES-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2310ES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2310ES-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2310ES-T1_GE3?

All SQ2310ES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2310ES-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2310ES-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2310ES-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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