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Vishay Siliconix SQ2318AES-T1_BE3
- Part No.:
- SQ2318AES-T1_BE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2318AES-T1_BE3.pdf
- Description:
- MOSFET N-CH 40V 8A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:48,297
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Product details
Overview
SQ2318AES-T1_BE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 8 A continuous drain current at 25 °C, and 0.031 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is qualified to AEC-Q101, serving as a high-reliability switching element in engine control modules and body electronics.
For engineers reviewing the SQ2318AES-T1_BE3 datasheet, SQ2318AES-T1_BE3 pinout, SQ2318AES-T1_BE3 application, or SQ2318AES-T1_BE3 equivalent, key selection criteria include its 175 °C operation capability, 100 % Rg and UIS tested reliability, SOT-23 footprint compatibility with space-constrained PCB layouts, and verified 4.5 V gate drive support for low-voltage microcontroller interfacing.
Technical Context
This MOSFET uses trench-gate silicon technology to achieve low on-resistance and fast switching performance in a thermally optimized SOT-23 package. Its gate threshold voltage (1.5–2.5 V) enables robust turn-on with standard logic-level drivers, while the 8.7 nC total gate charge supports efficient PWM operation at frequencies up to several hundred kHz.
The device integrates a body diode with 0.8–1.2 V forward voltage at 5.4 A and supports pulsed avalanche energy of 8 mJ. Thermal resistance from junction-to-foot is 50 °C/W, enabling direct thermal coupling to copper pour for enhanced power handling in automotive under-hood environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage compatible with 12 V automotive battery systems including load dump transients. |
| RDS(on) @ VGS = 10 V | 0.031 Ω - Enables <1 W conduction loss at 8 A DC, critical for thermally constrained engine bay locations. |
| RDS(on) @ VGS = 4.5 V | 0.036 Ω - Ensures reliable switching with 3.3 V/5 V MCU GPIOs without level-shifting circuitry. |
| ID Continuous @ TC = 25 °C | 8 A - Supports high-current loads such as fuel injectors, solenoids, and LED headlamp drivers. |
| TJ Operating Range | −55 to +175 °C - Certified for under-hood applications including transmission control units and turbocharger actuators. |
| Qg Total Gate Charge | 8.7 nC - Reduces driver power consumption and switching losses in 100–500 kHz PWM motor control. |
| EAS Avalanche Energy | 8 mJ - Withstands inductive kickback from relay and coil loads without external snubbers. |
Pinout & Package
SOT-23 (TO-236) surface-mount package with 3-pin configuration: 1.2 mm max height, 2.8 mm × 2.1 mm footprint, and 0.95 mm lead pitch. Designed for FR4 PCB mounting with 1"² copper area per JEDEC JESD51-3 standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal accepting 0–20 V gate-source voltage; 3.0 Ω typical gate resistance limits ringing during fast switching. |
| 2 (S) | Source | Reference node for gate drive and current return path; tied to system ground in low-side switch configurations. |
| 3 (D) | Drain | High-current output terminal connected to load; electrically and thermally coupled to exposed drain pad for heat dissipation. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive use across temperature, humidity, vibration, and lifetime stress tests per Rev. D requirements. |
| 100 % Rg and UIS testing | Each unit undergoes production-level gate resistance screening and unclamped inductive switching validation. |
| TrenchFET® architecture | Delivers 15 % lower RDS(on) vs. planar MOSFETs in same SOT-23 footprint, improving power density. |
| 175 °C maximum junction temperature | Enables placement near heat sources (e.g., ECU power stages) without derating or forced cooling. |
| Low Ciss (442 pF typ.) | Reduces capacitive loading on gate drivers and improves noise immunity in high-noise vehicle environments. |
Applications
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive Body Control Module (BCM) |
|---|---|
Use Scenario: Switching 12 V fuel injector coils with 2–5 ms pulse width and 10–20 Hz frequency. IC Role / Device Role / Timing Role: Low-side power switch controlling coil energization timing and current magnitude. Use Value: 0.036 Ω RDS(on) at 4.5 V ensures full saturation from MCU GPIO, minimizing coil dwell time error and thermal rise. |
Use Scenario: Driving door lock actuators, window lift motors, and interior lighting loads. IC Role / Device Role / Timing Role: High-reliability load switch providing overcurrent and thermal protection via integrated safe operating area. Use Value: 175 °C rating allows direct mounting on BCM PCBs near power regulators without thermal isolation. |
| Start-Stop System Solenoid Control | LED Headlamp Dimming Circuit |
Use Scenario: Controlling starter solenoid engagement during engine restart cycles with repeated 50–100 ms pulses. IC Role / Device Role / Timing Role: Robust power switch handling high inrush currents and inductive flyback energy. Use Value: 8 mJ single-pulse avalanche energy absorbs solenoid turn-off transients without external clamping diodes. |
Use Scenario: PWM dimming of high-brightness LED arrays (1–5 A) in adaptive driving beam systems. IC Role / Device Role / Timing Role: Fast-switching low-side current sink enabling >1 kHz modulation without thermal throttling. Use Value: 8.7 nC Qg and 11 ns turn-off delay enable precise duty-cycle control with minimal switching loss at 2 kHz. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| ON Semiconductor NTMFS4C06NT1G | 40 V, 0.028 Ω RDS(on) @ 10 V, SO-8FL package (larger footprint, higher thermal mass). | Preferred where board space permits and higher continuous current (>10 A) is required. | Select when thermal margin is prioritized over PCB area; not drop-in due to different package and pinout. |
| Infineon BSS138BKSXUMA1 | 50 V, 3.5 Ω RDS(on), SOT-363 package, rated only to 150 °C. | Suitable for non-critical signal switching but not for automotive power loads requiring AEC-Q101 or >150 °C operation. | Use only for low-power logic-level switching; unsuitable as direct replacement for SQ2318AES-T1_BE3 in engine bay applications. |
Compared with NTMFS4C06NT1G and BSS138BKSXUMA1, the SQ2318AES-T1_BE3 uniquely balances AEC-Q101 compliance, 175 °C operation, and SOT-23 compactness-making it the only option among the three qualified for high-temperature, space-constrained automotive power switching.
Availability
SQ2318AES-T1_BE3 is available at Aetrix Electronics and suitable for automotive engine control, body electronics, and start-stop system designs requiring stable component supply, long-term lifecycle assurance, and traceable sourcing aligned with IATF 16949 practices.
Supply support for SQ2318AES-T1_BE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-performance MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ2318AES-T1_BE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for high-temperature, high-reliability switching in engine management, chassis, and safety-critical vehicle subsystems.
FAQ
What is the maximum gate-source voltage rating for SQ2318AES-T1_BE3?
The SQ2318AES-T1_BE3 has a maximum gate-source voltage (VGS) rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) during transient events, especially in automotive environments with load dump spikes. The SQ2318AES-T1_BE3 gate leakage remains below ±100 nA at ±20 V, confirming robust oxide integrity within spec.
Is SQ2318AES-T1_BE3 suitable for 3.3 V microcontroller gate drive?
Yes, the SQ2318AES-T1_BE3 is fully compatible with 3.3 V logic-level gate drive: its gate threshold voltage (VGS(th)) ranges from 1.5 V to 2.5 V, and RDS(on) is specified at 0.036 Ω with only 4.5 V applied. At 3.3 V, the device delivers usable conduction (RDS(on) ≈ 0.055 Ω typ.), sufficient for moderate-current loads like sensors or small solenoids. For full 8 A capability, 4.5 V or higher is recommended - the SQ2318AES-T1_BE3 supports both scenarios.
Does SQ2318AES-T1_BE3 have an integrated body diode, and what are its characteristics?
Yes, the SQ2318AES-T1_BE3 includes a monolithic body diode with a forward voltage (VSD) of 0.8–1.2 V at 5.4 A and 25 °C. This diode supports freewheeling current in inductive loads and is rated for pulsed source current (ISM) up to 32 A. Its reverse recovery behavior is not characterized in the datasheet, so designers should avoid hard-commutation conditions. The SQ2318AES-T1_BE3 body diode is integral to its function in flyback and H-bridge topologies.
What thermal performance can be expected from SQ2318AES-T1_BE3 on a standard PCB?
When mounted on a 1"² FR4 PCB with 2 oz. copper on both sides, the SQ2318AES-T1_BE3 exhibits a junction-to-ambient thermal resistance (RthJA) of 166 °C/W. At 1 W power dissipation, this yields ~166 °C temperature rise above ambient - hence derating is essential. Using the drain pad for thermal vias reduces RthJA significantly; the junction-to-foot value is 50 °C/W, confirming effective heat transfer through the drain terminal. The SQ2318AES-T1_BE3 thermal design must account for ambient extremes up to 125 °C in under-hood use.
How is AEC-Q101 qualification verified for SQ2318AES-T1_BE3?
The SQ2318AES-T1_BE3 undergoes full AEC-Q101 stress testing including HTGB (high-temperature gate bias), HTRB (high-temperature reverse bias), TC (temperature cycling), and UHAST (unbiased highly accelerated stress test). Vishay documents parametric verification as "ongoing" per the datasheet revision, indicating active qualification maintenance. All units are 100 % Rg and UIS tested in production. The SQ2318AES-T1_BE3 certificate number and test report summaries are available upon request from Vishay's automotive support team.
SQ2318AES-T1_BE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 553 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2318AES-T1_BE3 FAQ
1.How can I place an order for SQ2318AES-T1_BE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2318AES-T1_BE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2318AES-T1_BE3 reliable?
The price and inventory of SQ2318AES-T1_BE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2318AES-T1_BE3 is usually 5 days.
3.What payment methods are accepted for SQ2318AES-T1_BE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2318AES-T1_BE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2318AES-T1_BE3?
SQ2318AES-T1_BE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2318AES-T1_BE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2318AES-T1_BE3?
For technical support, including SQ2318AES-T1_BE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2318AES-T1_BE3 requirements.
6.How does Aetrix verify that SQ2318AES-T1_BE3 is sourced from the original manufacturer or authorized distributors?
All SQ2318AES-T1_BE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2318AES-T1_BE3 meets industry standards.
7.What is the process for return or replacement of SQ2318AES-T1_BE3?
All SQ2318AES-T1_BE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2318AES-T1_BE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2318AES-T1_BE3 part is unused and in its original packaging.
Return procedure for SQ2318AES-T1_BE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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