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Vishay Siliconix SQ2318AES-T1_GE3
- Part No.:
- SQ2318AES-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2318AES-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 8A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:16,946
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Product details
Overview
SQ2318AES-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET with 40 V VDS, 8 A continuous drain current at 25 °C, and RDS(on) of 0.031 Ω at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood automotive power switching in DC-DC converters and motor drivers.
For engineers reviewing the SQ2318AES-T1_GE3 datasheet, SQ2318AES-T1_GE3 pinout, SQ2318AES-T1_GE3 application, or SQ2318AES-T1_GE3 equivalent, this device supports high-reliability 12 V/24 V automotive subsystems requiring low RDS(on), robust avalanche capability (EAS = 8 mJ), and validated gate charge (Qg = 8.7 nC typ).
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in space-constrained automotive modules. Its 100 % Rg and UIS testing ensures gate robustness and unclamped inductive switching reliability under transient load conditions.
The SOT-23 package delivers thermal resistance RthJA = 166 °C/W (PCB mount) and RthJF = 50 °C/W (junction-to-foot), enabling efficient heat transfer through the drain pad to PCB copper. Threshold voltage VGS(th) is tightly distributed (1.5–2.5 V) for stable turn-on across temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum drain-source blocking voltage compatible with 24 V automotive systems and transient clamping up to ISO 7637-2 Pulse 5a. |
| RDS(on) @ VGS = 10 V | 0.031 Ω - Low on-resistance enables ≤ 2 W conduction loss at 8 A, reducing thermal stress in compact layouts. |
| ID (continuous) | 8 A @ TC = 25 °C - Supports high-current loads such as fuel pump drivers and solenoid controls without external heatsinking. |
| EAS | 8 mJ - Single-pulse avalanche energy rating confirms ruggedness against inductive kickback in relay/motor drive circuits. |
| Qg | 8.7 nC (typ) - Enables fast, low-loss switching with standard gate drivers; reduces switching losses in 100–500 kHz DC-DC stages. |
| TJ range | −55 to +175 °C - Qualified for engine bay, transmission control, and ADAS ECU environments per AEC-Q101. |
| Ciss | 442 pF (typ) - Input capacitance supports predictable gate drive timing and minimizes Miller-induced shoot-through risk. |
Pinout & Package
SOT-23 (TO-236) surface-mount package with gull-wing leads, 1.02 mm max height, and drain-connected tab for thermal conduction to PCB copper pour.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≥1.5 V threshold to initiate conduction; driven by microcontroller GPIO or dedicated gate driver. |
| 2 | Source (S) | Reference node for gate drive; connects to system ground or low-side return path; carries full load current. |
| 3 | Drain (D) | High-side power output node; electrically and thermally connected to PCB copper via exposed pad; handles switched load current. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive production use including temperature cycling, humidity bias, and HTRB testing per Rev. D requirements. |
| 100 % Rg and UIS tested | Each unit screened for gate resistance consistency and unclamped inductive switching survival-critical for motor control reliability. |
| TrenchFET® architecture | Enables lower RDS(on) per die area than planar MOSFETs, supporting smaller footprint without sacrificing current handling. |
| Low VGS(th) variation | 1.5–2.5 V range ensures consistent turn-on behavior across temperature and process corners, simplifying gate drive design. |
| Drain-connected thermal pad | Exposed drain metal allows direct thermal coupling to PCB ground plane, improving power dissipation in confined spaces. |
Applications
| Engine Control Unit (ECU) Power Switching | Automotive DC-DC Converter Primary Switch |
|---|---|
|
Use Scenario: High-side switching of injector drivers and ignition coils in gasoline/diesel ECUs. IC Role / Device Role / Timing Role: N-channel power switch controlled by PWM signal from MCU; handles repetitive 10–100 Hz pulsed loads. Use Value: 175 °C operation and 8 mJ EAS ensure survival during cold-crank transients and coil flyback events. |
Use Scenario: Primary-side synchronous rectifier or high-side switch in 12 V → 3.3 V/5 V buck converters for infotainment modules. IC Role / Device Role / Timing Role: Fast-switching power transistor operating at 200–500 kHz with low Qg and Ciss. Use Value: 0.031 Ω RDS(on) at 10 V reduces conduction loss below 2 W, enabling >92 % efficiency in compact 2-layer PCB designs. |
| Body Control Module (BCM) Load Driver | ADAS Camera Power Sequencing |
|
Use Scenario: Driving LED headlamps, HVAC blower motors, and window lift actuators in BCMs. IC Role / Device Role / Timing Role: Low-side or high-side load switch with integrated protection; controlled by CAN/LIN interface MCU. Use Value: AEC-Q101 qualification and −55 °C start-up capability support full vehicle lifecycle across global climates. |
Use Scenario: Controlled power-up sequencing of image sensor, ISP, and lens actuator in rear-view or surround-view cameras. IC Role / Device Role / Timing Role: Precision power switch enabling soft-start and fault-isolation between camera sub-systems. Use Value: Tight VGS(th) distribution and low IDSS (<1 μA at 25 °C) prevent leakage-induced wake-up in always-on camera domains. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| Infineon BSS138N H6327 | Lower ID (0.36 A), higher RDS(on) (3.5 Ω), SOT-23 package - not rated for automotive temperature or AEC-Q101. | Only suitable for low-power signal switching (e.g., level shifting), not power delivery or motor drive. | Select only for non-automotive, low-current logic-level interfacing where thermal and reliability requirements are minimal. |
| ON Semiconductor NTMFS4C02NT1G | Same 40 V rating, 10 A ID, 0.0027 Ω RDS(on), but in SO-8FL package - larger footprint, higher cost, different thermal path. | Better for higher-current DC-DC stages needing >8 A, but incompatible with SOT-23 board space constraints. | Choose when board layout allows SO-8FL and system demands <0.003 Ω RDS(on); not a drop-in replacement due to package and pinout mismatch. |
Compared with BSS138N H6327 and NTMFS4C02NT1G, the SQ2318AES-T1_GE3 uniquely balances AEC-Q101 compliance, SOT-23 form factor, and 8 A/40 V capability-making it optimal for space-limited automotive power nodes where qualification and thermal performance are non-negotiable.
Availability
SQ2318AES-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, engine management systems, and ADAS power modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.
Supply support for SQ2318AES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ2318AES-T1_GE3 belongs to Vishay's TrenchFET® automotive power MOSFET family, engineered specifically for under-hood switching applications demanding AEC-Q101 qualification, high-temperature operation, and robust avalanche performance.
FAQ
What is the maximum continuous drain current for SQ2318AES-T1_GE3 at 125 °C case temperature?
The SQ2318AES-T1_GE3 supports 4.6 A continuous drain current at TC = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package and must be verified against actual PCB copper area and ambient conditions in the final design.
Is SQ2318AES-T1_GE3 suitable for high-frequency switching above 1 MHz?
No-SQ2318AES-T1_GE3 is optimized for switching frequencies up to 500 kHz. Its typical Qg of 8.7 nC and Ciss of 442 pF result in increased switching losses beyond that range; for >1 MHz operation, consider Vishay's next-generation TrenchFET Gen IV devices with lower gate charge.
Does SQ2318AES-T1_GE3 have integrated ESD protection on the gate?
The SQ2318AES-T1_GE3 does not include on-die ESD protection circuitry. Gate-source leakage is specified at ±100 nA, and the device relies on external gate resistors and layout best practices (e.g., short traces, ground shielding) to mitigate ESD risk in automotive assembly environments.
Can SQ2318AES-T1_GE3 be used in a high-side configuration with 12 V supply?
Yes-SQ2318AES-T1_GE3 supports high-side switching with 12 V supply when paired with a gate driver capable of providing ≥10 V gate-source voltage. Its VGS rating of ±20 V and VDS of 40 V provide sufficient margin for automotive battery transients per ISO 7637-2.
What is the marking code printed on the top of the SQ2318AES-T1_GE3 package?
The SQ2318AES-T1_GE3 is marked with "8Y" on the top surface of the SOT-23 package, as confirmed in the Vishay datasheet revision B. This marking identifies the device variant and is used for traceability and visual inspection during manufacturing.
SQ2318AES-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 555 pF @ 10 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2318AES-T1_GE3 FAQ
1.How can I place an order for SQ2318AES-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2318AES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2318AES-T1_GE3 reliable?
The price and inventory of SQ2318AES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2318AES-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ2318AES-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2318AES-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2318AES-T1_GE3?
SQ2318AES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2318AES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2318AES-T1_GE3?
For technical support, including SQ2318AES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2318AES-T1_GE3 requirements.
6.How does Aetrix verify that SQ2318AES-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ2318AES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2318AES-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ2318AES-T1_GE3?
All SQ2318AES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2318AES-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2318AES-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ2318AES-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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