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Vishay Siliconix SQ2318CES-T1_GE3
- Part No.:
- SQ2318CES-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
SQ2318CES-T1_GE3.pdf
- Description:
- MOSFET N-CH 40V 8A SOT23-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,114
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Product details
Overview
SQ2318CES-T1_GE3 from Vishay Siliconix is an automotive-grade N-channel TrenchFET® power MOSFET rated for 40 V drain-source voltage, 7 A continuous drain current at 25 °C, and 0.031 Ω RDS(on) at VGS = 10 V. It operates up to +175 °C junction temperature and is AEC-Q101 qualified for under-hood power switching in engine control units and body electronics.
For engineers reviewing the SQ2318CES-T1_GE3 datasheet, SQ2318CES-T1_GE3 pinout, SQ2318CES-T1_GE3 application, or SQ2318CES-T1_GE3 equivalent, key selection criteria include its 100 % Rg and UIS tested reliability, SOT-23 package thermal performance (RthJA = 166 °C/W), and low gate charge (Qg = 8.9 nC typical) for efficient PWM-driven load switching.
Technical Context
This MOSFET uses trench-gate silicon technology optimized for low conduction loss and fast switching in DC-DC converters and motor drivers. Its gate threshold voltage (VGS(th) = 1.5–2.5 V) enables robust turn-on with standard 3.3 V or 5 V logic-level drive, while the body diode exhibits trr = 12–24 ns and Qrr = 7–14 nC for reduced switching losses in synchronous rectification.
The device features a fully characterized safe operating area (SOA) up to 100 μs pulses and supports avalanche energy rating of EAS = 8.4 mJ. Thermal design is supported by validated junction-to-foot (RthJF = 50 °C/W) and junction-to-ambient (RthJA = 166 °C/W) resistance values on standard 1" × 1" FR4 PCB.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 40 V - Maximum blocking voltage for 12 V automotive systems with load dump margin |
| RDS(on) @ VGS = 10 V | 0.031 Ω - Enables ≤2.2 W conduction loss at 7 A, critical for thermally constrained SOT-23 layouts |
| ID (continuous) | 7 A @ TC = 25 °C - Rated current for PCB-mounted operation with heatsinking via drain pad |
| Qg | 8.9 nC typical - Reduces gate driver power requirement and switching transition time |
| TJ max | +175 °C - Supports operation in high-temperature engine bay environments per AEC-Q101 |
| EAS | 8.4 mJ - Confirmed single-pulse avalanche capability for inductive load switching safety |
| VGS(th) | 1.5–2.5 V - Ensures reliable enhancement-mode turn-on with standard microcontroller GPIO |
Pinout & Package
SOT-23 (TO-236) surface-mount package with gull-wing leads; drain-connected tab provides thermal path to PCB copper pour. Dimensions: 2.80–3.04 mm × 2.10–2.64 mm × 0.89–1.12 mm height.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires <100 nA leakage current and 2.7 Ω typical gate resistance for stable PWM drive |
| 2 (S) | Source | Reference node for gate drive; connects to ground or low-side return path in high-side switch configurations |
| 3 (D) | Drain | Power output terminal; internally connected to exposed metal pad for thermal dissipation and current conduction |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualification | Validated for automotive applications including engine control, lighting, and power distribution modules |
| 100 % Rg and UIS testing | Each unit screened for gate resistance consistency and unclamped inductive switching robustness |
| TrenchFET® architecture | Delivers lower RDS(on) × area than planar MOSFETs, enabling compact SOT-23 footprint for 7 A loads |
| Body diode trr = 12–24 ns | Minimizes reverse recovery losses in synchronous buck converters and H-bridge motor drives |
| Lead (Pb)-free and halogen-free | Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile requirements |
Applications
| Engine Control Unit Power Switching | Automotive LED Headlamp Driver |
|---|---|
Use Scenario: High-side switching of solenoid valves and fuel injectors in 12 V engine management systems. IC Role / Device Role / Timing Role: N-channel power switch controlled by microcontroller PWM signal; handles repetitive 7 A pulsed loads. Use Value: 0.031 Ω RDS(on) limits I²R heating under continuous duty, while +175 °C rating ensures reliability near hot engine components. | Use Scenario: Low-side current regulation for adaptive front-lighting system (AFS) matrix LED arrays. IC Role / Device Role / Timing Role: Fast-switching current sink with precise PWM dimming control and integrated body diode freewheeling. Use Value: 8.9 nC Qg and 12 ns trr enable >10 kHz dimming without significant switching loss or EMI. |
| Body Control Module Load Driver | Start-Stop System Auxiliary Power Switch |
Use Scenario: Driving window lift motors, seat actuators, and HVAC blower fans in centralized body electronics units. IC Role / Device Role / Timing Role: Protected load switch with overcurrent and thermal shutdown coordination via external controller. Use Value: AEC-Q101 qualification and 8.4 mJ EAS ensure survivability during motor stall and cable short events. | Use Scenario: Isolating auxiliary 12 V circuits (e.g., infotainment, telematics) during engine cranking voltage sag. IC Role / Device Role / Timing Role: High-reliability power OR-ing switch activated by start-stop controller logic. Use Value: 175 °C operation and 100 % UIS test guarantee uninterrupted function during repeated cold-cranking cycles. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel automotive MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | RDS(on) = 0.028 Ω @ 10 V, but rated only to +150 °C and not AEC-Q101 qualified | Limited to non-safety-critical cabin electronics; unsuitable for engine bay placement | Select when cost sensitivity outweighs under-hood temperature and qualification requirements |
| IPB031N04LGATMA1 | TO-263 package, 0.031 Ω RDS(on), +175 °C, AEC-Q101 - but 3× larger footprint and higher Qg (22 nC) | Better thermal handling for >10 A loads; requires PCB redesign and larger gate driver | Select when higher current or improved thermal margin justifies layout change and BOM cost increase |
Compared with DMN3020LSD-13 and IPB031N04LGATMA1, the SQ2318CES-T1_GE3 uniquely balances AEC-Q101 compliance, +175 °C operation, and SOT-23 footprint - making it optimal for space-constrained, high-temperature automotive switches where qualification and thermal density are jointly critical.
Availability
SQ2318CES-T1_GE3 is available at Aetrix Electronics and suitable for engine control units, automotive LED lighting systems, and body control modules requiring stable component supply across extended temperature ranges and automotive lifecycle demands.
Supply support for SQ2318CES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Vishay Siliconix is a global leader in discrete semiconductors, specializing in high-reliability MOSFETs, diodes, and optoelectronics for automotive, industrial, and computing markets.
The SQ2318CES-T1_GE3 belongs to Vishay's TrenchFET® automotive MOSFET family, engineered specifically for high-temperature, high-reliability power switching in engine management, lighting, and body electronics.
FAQ
What is the maximum continuous drain current rating for SQ2318CES-T1_GE3 at 125 °C case temperature?
The SQ2318CES-T1_GE3 supports 4 A continuous drain current at TC = 125 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under elevated ambient conditions and must be verified against actual PCB thermal design using RthJA = 166 °C/W and RthJF = 50 °C/W data.
Is SQ2318CES-T1_GE3 suitable for use as a high-side switch with 3.3 V logic-level gate drive?
Yes, SQ2318CES-T1_GE3 has a gate threshold voltage range of 1.5–2.5 V and delivers RDS(on) = 0.036 Ω at VGS = 4.5 V, making it compatible with 3.3 V microcontroller outputs when used with appropriate gate pull-up or level-shifting. Full 7 A current capability requires ≥4.5 V gate drive per datasheet specifications.
Does SQ2318CES-T1_GE3 include integrated ESD protection on the gate terminal?
No, SQ2318CES-T1_GE3 does not specify integrated ESD protection. Its gate-source leakage is rated at ±100 nA at ±20 V, and gate oxide integrity relies on external handling precautions and board-level TVS or RC filtering. Designers should implement gate protection per AEC-Q100 stress guidelines for automotive environments.
What is the safe operating area (SOA) limitation for SQ2318CES-T1_GE3 at 100 μs pulse width?
At 100 μs pulse width and TC = 25 °C, the SQ2318CES-T1_GE3 SOA is limited by RDS(on) conduction, supporting up to ~7 A at 40 V. The datasheet's SOA graph confirms this boundary is defined by constant power and thermal constraints-not avalanche-within that pulse duration.
How does the body diode performance of SQ2318CES-T1_GE3 compare to standard silicon diodes in flyback applications?
The SQ2318CES-T1_GE3 body diode offers VSD = 0.848–1.2 V at 5.4 A and trr = 12–24 ns, significantly faster and lower forward drop than discrete 1 A Schottky diodes in same footprint. This reduces flyback loss and EMI in compact DC-DC regulators, though external diode may still be preferred for ultra-low VF or higher current.
SQ2318CES-T1_GE3 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- TrenchFET®
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 31mOhm @ 7.9A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 553 pF @ 20 V
- FET Feature:
- -
- Power Dissipation (Max):
- 3W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3 (TO-236)
SQ2318CES-T1_GE3 FAQ
1.How can I place an order for SQ2318CES-T1_GE3 through Aetrix?
Please submit a Request for Quotation (RFQ) for SQ2318CES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SQ2318CES-T1_GE3 reliable?
The price and inventory of SQ2318CES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2318CES-T1_GE3 is usually 5 days.
3.What payment methods are accepted for SQ2318CES-T1_GE3?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2318CES-T1_GE3 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SQ2318CES-T1_GE3?
SQ2318CES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SQ2318CES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SQ2318CES-T1_GE3?
For technical support, including SQ2318CES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2318CES-T1_GE3 requirements.
6.How does Aetrix verify that SQ2318CES-T1_GE3 is sourced from the original manufacturer or authorized distributors?
All SQ2318CES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2318CES-T1_GE3 meets industry standards.
7.What is the process for return or replacement of SQ2318CES-T1_GE3?
All SQ2318CES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2318CES-T1_GE3, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SQ2318CES-T1_GE3 part is unused and in its original packaging.
Return procedure for SQ2318CES-T1_GE3:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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