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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2319ADS-T1_GE3

Name: SQ2319ADS-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2319ADS-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2319ADS-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2319ADS-T1_GE3.pdf

Description:: MOSFET P-CH 40V 4.6A SOT23-3

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Inventory:11,590

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Product details

Overview

SQ2319ADS-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SOT-23 package, rated for -40 V drain-source voltage, 0.075 Ω R_DS(on) at V_GS = -10 V, and -4.6 A continuous drain current at T_C = 25 °C. It serves as a high-side load switch in 12 V automotive power distribution systems, including body control modules and LED lighting drivers.

For engineers reviewing the SQ2319ADS-T1_GE3 datasheet, SQ2319ADS-T1_GE3 pinout, SQ2319ADS-T1_GE3 application, or SQ2319ADS-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and real-world design context for automotive power switching validation.

Technical Context

This device uses Vishay's TrenchFET® process to achieve low gate charge (10.5 nC typical) and optimized capacitance ratios (C_iss/C_rss = ~8.8), enabling fast switching with reduced Miller-induced turn-off delay. Its -2.0 V typical gate threshold voltage ensures reliable enhancement-mode operation across -55 °C to +150 °C junction temperature range.

The SQ2319ADS-T1_GE3 integrates a robust intrinsic body diode (V_SD = -0.8 V at -1.5 A) and is 100 % R_g and UIS tested per AEC-Q101 requirements. Thermal resistance is characterized for both junction-to-ambient (166 °C/W on 1"² FR4 PCB) and junction-to-foot (50 °C/W), supporting accurate SOA analysis in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage for 12 V automotive battery rail transients (e.g., load dump up to ISO 7637-2 Pulse 5a).
R_DS(on) @ V_GS = -10 V	0.075 Ω - Enables ≤ 1.6 W conduction loss at -4.6 A, suitable for thermally constrained SOT-23 footprints.
I_D (continuous)	-4.6 A @ T_C = 25 °C - Supports medium-power loads such as HVAC actuators or mirror heaters without external heatsinking.
Q_g	10.5 nC typical - Allows efficient gate drive with low-current controllers (e.g., MCU GPIO + 100 Ω series resistor).
T_J range	-55 °C to +150 °C - Meets under-hood ambient requirements per AEC-Q100 Grade 0/1 specifications.
E_AS	8.4 mJ - Withstands single-pulse inductive energy from solenoid or motor coil flyback without failure.
R_thJA	166 °C/W - Defines maximum power dissipation (2.5 W at T_C = 25 °C) on standard 1"² double-sided FR4 PCB.

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3 leads: 1.02 mm max height, 2.80–3.04 mm length, 2.10–2.64 mm width, and 0.95 mm lead pitch. Designed for automated placement and reflow soldering per IPC-J-STD-020.

Pin/Terminal	Circuit Role	Design Meaning
1 (G)	Gate	Control terminal requiring ≤ ±20 V bias; 2.1–6.4 Ω gate resistance affects switching speed and ringing.
2 (S)	Source	Reference node for gate drive; tied to system ground or high-side rail return in floating configurations.
3 (D)	Drain	Power output terminal; electrically connected to exposed drain pad (foot) for thermal conduction to PCB copper.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including temperature cycling, HTRB, and UIS stress per Rev. D test plan.
100 % R_g and UIS tested	Each unit screened for gate resistance consistency and unclamped inductive switching robustness-no batch sampling.
TrenchFET® architecture	Delivers 15 % lower R_DS(on) vs. planar P-channel equivalents at same die size, improving power density.
Lead (Pb)-free and halogen-free	Complies with RoHS Directive 2011/65/EU and JEDEC JS709E, supporting green manufacturing requirements.
Drain-connected thermal foot	Exposed drain metal on underside enables direct thermal path to PCB ground plane, reducing R_thJA by up to 30 % with 2 oz copper fill.

Applications

Automotive Body Control Module (BCM)	LED Headlamp Driver
Use Scenario: Switching 12 V power to door lock actuators, window lift motors, or interior lighting circuits. IC Role / Device Role / Timing Role: High-side load switch controlling current flow from battery to load; operates in DC on/off mode with <10 μs turn-on delay. Use Value: Low R_DS(on) minimizes voltage drop and heat generation during sustained actuation, extending relay life and reducing PCB thermal stress.	Use Scenario: PWM dimming control of high-brightness LED arrays in adaptive front-lighting systems (AFS). IC Role / Device Role / Timing Role: Synchronous high-side switch synchronized to MCU PWM signal; supports 1–20 kHz switching with <30 ns fall time. Use Value: Fast switching and low Q_g reduce switching losses and EMI, enabling clean PWM edges without external snubbers.
Engine Control Unit (ECU) Sensor Power	Start-Stop System Load Management
Use Scenario: Providing regulated 12 V bias to pressure, temperature, and position sensors during engine cranking. IC Role / Device Role / Timing Role: Reverse-polarity protection and load disconnect switch placed between battery and sensor supply rail. Use Value: Intrinsic body diode blocks reverse current during negative transients; -40 V V_DS withstands cranking dips and jump-start surges.	Use Scenario: Isolating non-critical loads (e.g., infotainment, HVAC blower) during engine restart to preserve battery voltage. IC Role / Device Role / Timing Role: Controlled power gating element activated by CAN message or discrete enable signal from start-stop controller. Use Value: AEC-Q101 qualification ensures reliability over 100,000+ stop-start cycles; SOA rating supports safe interruption of inductive loads.

Automotive Body Control Module (BCM)

LED Headlamp Driver

Use Scenario: Switching 12 V power to door lock actuators, window lift motors, or interior lighting circuits.

IC Role / Device Role / Timing Role: High-side load switch controlling current flow from battery to load; operates in DC on/off mode with <10 μs turn-on delay.

Use Value: Low R_DS(on) minimizes voltage drop and heat generation during sustained actuation, extending relay life and reducing PCB thermal stress.

Use Scenario: PWM dimming control of high-brightness LED arrays in adaptive front-lighting systems (AFS).

IC Role / Device Role / Timing Role: Synchronous high-side switch synchronized to MCU PWM signal; supports 1–20 kHz switching with <30 ns fall time.

Use Value: Fast switching and low Q_g reduce switching losses and EMI, enabling clean PWM edges without external snubbers.

Engine Control Unit (ECU) Sensor Power

Start-Stop System Load Management

Use Scenario: Providing regulated 12 V bias to pressure, temperature, and position sensors during engine cranking.

IC Role / Device Role / Timing Role: Reverse-polarity protection and load disconnect switch placed between battery and sensor supply rail.

Use Value: Intrinsic body diode blocks reverse current during negative transients; -40 V V_DS withstands cranking dips and jump-start surges.

Use Scenario: Isolating non-critical loads (e.g., infotainment, HVAC blower) during engine restart to preserve battery voltage.

IC Role / Device Role / Timing Role: Controlled power gating element activated by CAN message or discrete enable signal from start-stop controller.

Use Value: AEC-Q101 qualification ensures reliability over 100,000+ stop-start cycles; SOA rating supports safe interruption of inductive loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 0.052 Ω @ -4.5 V (lower), but only AEC-Q101 qualified to Grade 2 (T_J = -40 to +125 °C).	Less suitable for under-hood locations exceeding 125 °C ambient.	Select if higher efficiency at low V_GS is prioritized and junction temperature stays below 125 °C.
IPD250N04LG	TO-252 package, 0.025 Ω R_DS(on), 25 A rating-higher current capacity but larger footprint and no AEC-Q101 certification.	Requires PCB redesign; not validated for automotive qualification testing.	Choose only for non-automotive industrial applications needing higher current or lower R_DS(on).

Compared with DMG2305UVT-7 and IPD250N04LG, the SQ2319ADS-T1_GE3 uniquely balances AEC-Q101 Grade 0 compliance, SOT-23 compactness, and verified -150 °C to +150 °C operation-making it the only option among the three qualified for full under-hood deployment without derating.

Availability

SQ2319ADS-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, engine management subsystems, and start-stop system load switching requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for SQ2319ADS-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in MOSFETs, diodes, and optoelectronics with emphasis on high-reliability power management solutions.

The SQ2319ADS-T1_GE3 belongs to Vishay's automotive-qualified TrenchFET® P-channel MOSFET family, engineered specifically for space-constrained, thermally demanding 12 V vehicle subsystems where AEC-Q101 compliance and robust SOA are mandatory.

FAQ

What is the gate threshold voltage range for SQ2319ADS-T1_GE3?

The SQ2319ADS-T1_GE3 has a gate-source threshold voltage (V_GS(th)) ranging from -1.5 V to -2.5 V, with a typical value of -2.0 V at I_D = -250 μA. This ensures consistent turn-on behavior across temperature and process variation, critical for deterministic switching in automotive microcontroller-driven systems using SQ2319ADS-T1_GE3.

Is SQ2319ADS-T1_GE3 suitable for reverse polarity protection?

Yes, SQ2319ADS-T1_GE3 is commonly used for reverse polarity protection due to its P-channel configuration and -40 V V_DS rating. When placed between battery and load with source tied to battery+, it blocks reverse current flow while maintaining low forward drop; the SQ2319ADS-T1_GE3 body diode orientation inherently supports this topology without additional components.

Does SQ2319ADS-T1_GE3 require a gate driver IC?

No, SQ2319ADS-T1_GE3 can be driven directly by most 3.3 V or 5 V microcontrollers because its V_GS(th) is -2.0 V typical and it achieves low R_DS(on) at V_GS = -4.5 V. A simple level-shifting resistor network suffices-no dedicated gate driver IC is needed unless operating above 20 kHz PWM or driving >100 pF gate capacitance in parallel configurations involving multiple SQ2319ADS-T1_GE3 devices.

What is the avalanche energy rating of SQ2319ADS-T1_GE3?

The SQ2319ADS-T1_GE3 is rated for 8.4 mJ of single-pulse avalanche energy (E_AS) under standardized test conditions (L = 0.1 mH, I_AS = -13 A). This rating validates its ability to absorb inductive kickback from solenoids or small motors without failure, a key requirement confirmed during AEC-Q101 UIS testing for the SQ2319ADS-T1_GE3.

How does the thermal performance of SQ2319ADS-T1_GE3 compare to similar SOT-23 MOSFETs?

SQ2319ADS-T1_GE3 features a junction-to-foot thermal resistance (R_thJF) of 50 °C/W, significantly lower than typical SOT-23 P-channel MOSFETs (often >70 °C/W), due to its exposed drain pad design. This allows higher power dissipation before reaching T_J = 150 °C-enabling SQ2319ADS-T1_GE3 to sustain -3.5 A continuously on standard PCBs where competitors would require derating or heatsinking.

SQ2319ADS-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 2.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2319ADS-T1_GE3 FAQ

1.How can I place an order for SQ2319ADS-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2319ADS-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2319ADS-T1_GE3 reliable?

The price and inventory of SQ2319ADS-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2319ADS-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2319ADS-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2319ADS-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2319ADS-T1_GE3?

SQ2319ADS-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2319ADS-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2319ADS-T1_GE3?

For technical support, including SQ2319ADS-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2319ADS-T1_GE3 requirements.

6.How does Aetrix verify that SQ2319ADS-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2319ADS-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2319ADS-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2319ADS-T1_GE3?

All SQ2319ADS-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2319ADS-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2319ADS-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2319ADS-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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