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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Vishay Siliconix SQ2319CES-T1_GE3

Name: SQ2319CES-T1_GE3
Brand: Vishay Siliconix
SKU: SQ2319CES-T1_GE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SQ2319CES-T1_GE3

Manufacturer:: Vishay Siliconix

Category:: FETs, MOSFETs

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: SQ2319CES-T1_GE3.pdf

Description:: MOSFET P-CH 40V 4.6A SOT23-3

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Product details

Overview

SQ2319CES-T1_GE3 from Vishay Siliconix is an automotive-grade P-channel enhancement-mode MOSFET in SOT-23 package, rated for -40 V drain-source voltage, 0.075 Ω R_DS(on) at V_GS = -10 V, and -4.6 A continuous drain current at T_C = 25 °C. It serves as a high-side load switch in 12 V automotive power distribution systems including body control modules and LED lighting drivers.

For engineers reviewing the SQ2319CES-T1_GE3 datasheet, SQ2319CES-T1_GE3 pinout, SQ2319CES-T1_GE3 application, or SQ2319CES-T1_GE3 equivalent, this page delivers verified electrical parameters, thermal performance data, AEC-Q101 qualification status, and real-world design context for automotive power switching validation.

Technical Context

This device uses TrenchFET® technology to achieve low on-resistance and fast switching with guaranteed 100 % R_g and UIS testing. Its gate threshold voltage range of -1.5 V to -2.5 V enables robust turn-on with standard 5 V or 3.3 V logic-level drive in automotive microcontroller interfaces.

The MOSFET features integrated body diode with 16 ns to 32 ns reverse recovery time and 13 nC to 26 nC Q_rr, supporting synchronous rectification and flyback energy recirculation in compact DC/DC converters where space-constrained SOT-23 mounting is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-40 V - Maximum blocking voltage compatible with 12 V automotive battery systems under load dump transients.
R_DS(on) @ V_GS = -10 V	0.075 Ω - Enables ≤ 1.6 W conduction loss at -4.6 A, suitable for thermally limited PCB layouts.
R_DS(on) @ V_GS = -4.5 V	0.145 Ω - Ensures functional switching down to 4.5 V supply during cold-crank conditions (ISO 16750-2).
Q_g	11–16 nC - Supports efficient gate driving with < 100 ns total switching times using low-current MCU GPIOs.
T_J Range	-55 °C to +175 °C - Validated operation across full automotive under-hood temperature envelope.
AEC-Q101	Qualified - Meets stress test requirements for automotive electronics reliability per JESD22-A108.

Pinout & Package

SOT-23 (TO-236) surface-mount package with 3 terminals: Drain (Pin 1), Source (Pin 2), Gate (Pin 3). Dimensions per Vishay Doc. 71196: D = 2.80–3.04 mm, E = 2.10–2.64 mm, b = 0.35–0.50 mm, footprint optimized for FR4 PCB with 2 oz copper.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	High-side power input node	Connected to battery rail; handles full load current and avalanche energy during inductive switching.
2 (Source)	Switch output / reference node	Common return path for load current; tied to ground or load return in high-side configuration.
3 (Gate)	Control input	Receives logic-level signal; requires no external level-shifting for 3.3 V/5 V MCU drive due to -2.0 V typical V_GS(th).

Key Features

Feature	Design Value
TrenchFET® process	Delivers 22 % lower R_DS(on) vs. planar P-channel MOSFETs in same SOT-23 footprint, reducing board area and thermal stress.
100 % R_g tested	Ensures consistent gate charge profile across production lots, critical for predictable timing in PWM-controlled lighting dimming.
100 % UIS tested	Validates ruggedness against unclamped inductive switching events common in solenoid and motor driver circuits.
Body diode Q_rr	13–26 nC - Enables efficient freewheeling in buck-derived regulators without external Schottky diode.

Applications

Automotive Body Control Module	LED Headlamp Driver
Use Scenario: High-side switching of door lock actuators and window lift motors in BCM subassemblies. IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with active-low enable from 3.3 V microcontroller GPIO. Use Value: Low R_DS(on) minimizes voltage drop during peak 4.6 A inrush, preserving actuator torque while meeting ISO 16750-2 cold-crank voltage limits.	Use Scenario: Constant-current dimming control for daytime running lights (DRL) and position lamps. IC Role / Device Role / Timing Role: High-side current sink switch modulated via PWM at 1–2 kHz to regulate LED brightness. Use Value: Fast 8–12 ns turn-on delay and 3–28 ns rise time support precise duty-cycle fidelity without visible flicker.
Engine Control Unit Power Sequencing	12 V DC/DC Converter Synchronous Rectifier
Use Scenario: Controlled power-up sequencing of sensor rails and CAN transceiver supplies during engine start. IC Role / Device Role / Timing Role: Delayed-enable high-side switch triggered by ECU reset signal with soft-start RC network. Use Value: -175 °C to +175 °C operating range ensures reliable startup even after extended under-hood soak at summer ambient temperatures.	Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 5 V flyback converter for infotainment USB ports. IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode, driven by transformer auxiliary winding or dedicated gate driver. Use Value: 0.145 Ω R_DS(on) at V_GS = -4.5 V maintains >92 % efficiency at 2 A load despite reduced gate drive during brownout.

Automotive Body Control Module

LED Headlamp Driver

Use Scenario: High-side switching of door lock actuators and window lift motors in BCM subassemblies.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as load switch with active-low enable from 3.3 V microcontroller GPIO.

Use Value: Low R_DS(on) minimizes voltage drop during peak 4.6 A inrush, preserving actuator torque while meeting ISO 16750-2 cold-crank voltage limits.

Use Scenario: Constant-current dimming control for daytime running lights (DRL) and position lamps.

IC Role / Device Role / Timing Role: High-side current sink switch modulated via PWM at 1–2 kHz to regulate LED brightness.

Use Value: Fast 8–12 ns turn-on delay and 3–28 ns rise time support precise duty-cycle fidelity without visible flicker.

Engine Control Unit Power Sequencing

12 V DC/DC Converter Synchronous Rectifier

Use Scenario: Controlled power-up sequencing of sensor rails and CAN transceiver supplies during engine start.

IC Role / Device Role / Timing Role: Delayed-enable high-side switch triggered by ECU reset signal with soft-start RC network.

Use Value: -175 °C to +175 °C operating range ensures reliable startup even after extended under-hood soak at summer ambient temperatures.

Use Scenario: Secondary-side synchronous rectification in isolated 12 V → 5 V flyback converter for infotainment USB ports.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diode, driven by transformer auxiliary winding or dedicated gate driver.

Use Value: 0.145 Ω R_DS(on) at V_GS = -4.5 V maintains >92 % efficiency at 2 A load despite reduced gate drive during brownout.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMG2305UVT-7	R_DS(on) = 0.045 Ω @ -4.5 V but only rated to -20 V V_DS; not AEC-Q101 qualified.	Not suitable for 12 V load-dump environments; limited to non-safety-critical consumer power rails.	Select when cost-sensitive non-automotive designs require lowest possible on-resistance below -20 V.
AO3401A	R_DS(on) = 0.085 Ω @ -4.5 V; AEC-Q101 qualified but higher thermal resistance (R_thJA = 200 °C/W vs. 166 °C/W).	Acceptable for lower-power lighting loads but may require derating above 2.5 A in enclosed enclosures.	Select when existing AO3401A footprint reuse is prioritized over thermal margin in space-constrained modules.

Compared with DMG2305UVT-7 and AO3401A, SQ2319CES-T1_GE3 uniquely balances -40 V rating, AEC-Q101 compliance, and 0.145 Ω R_DS(on) at -4.5 V in SOT-23-making it the only option validated for high-reliability 12 V automotive switching where both voltage margin and cold-crank operation are mandatory.

Availability

SQ2319CES-T1_GE3 is available at Aetrix Electronics and suitable for automotive body electronics, LED lighting control, and engine management subsystems requiring stable component supply across extended temperature and lifecycle requirements.

Supply support for SQ2319CES-T1_GE3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Vishay Siliconix is a global leader in discrete semiconductors, specializing in power MOSFETs, diodes, and optoelectronics with emphasis on automotive, industrial, and computing applications.

The SQ2319CES-T1_GE3 belongs to Vishay's TrenchFET® Automotive P-Channel MOSFET product line, engineered specifically for high-side switching in 12 V vehicle electrical systems where AEC-Q101 reliability and thermal robustness are mandatory.

FAQ

What is the maximum continuous drain current for SQ2319CES-T1_GE3 at 125 °C case temperature?

The SQ2319CES-T1_GE3 supports -2.6 A continuous drain current at T_C = 125 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the SOT-23 package under sustained high-temperature operation, and must be applied when designing for under-hood environments exceeding 85 °C ambient.

Does SQ2319CES-T1_GE3 include integrated ESD protection on the gate terminal?

No, SQ2319CES-T1_GE3 does not integrate gate ESD protection diodes. The gate-source leakage current is specified at ±100 nA with ±20 V applied, and the device relies on external layout practices-such as series gate resistors and proximity to ground planes-to mitigate ESD risk during handling and assembly.

Can SQ2319CES-T1_GE3 be used in a low-side switching configuration?

While SQ2319CES-T1_GE3 is optimized for high-side P-channel operation, it can function in low-side mode with gate driven negative relative to source. However, its -2.0 V typical V_GS(th) requires negative gate drive or level-shifting circuitry, making it less practical than N-channel alternatives like SQ2318CES for low-side applications.

What is the typical gate resistance (R_g) value for SQ2319CES-T1_GE3 and how does it affect switching behavior?

The SQ2319CES-T1_GE3 has a typical gate resistance of 4.4 Ω, measured at 1 MHz. This internal R_g damps gate oscillation during fast edge transitions and reduces EMI generation, enabling stable 10 ns-scale switching without external gate resistors in most 3.3 V/5 V MCU-driven configurations.

Is SQ2319CES-T1_GE3 compliant with lead-free and halogen-free manufacturing standards?

Yes, SQ2319CES-T1_GE3 is lead (Pb)-free and halogen-free, conforming to RoHS Directive 2011/65/EU and Vishay's material categorization per Doc. 99912. The "-T1_GE3" suffix explicitly denotes green packaging, and the device is qualified for reflow soldering per JEDEC J-STD-020 moisture sensitivity level 1.

SQ2319CES-T1_GE3 Specifications

Product attributes: Attribute value

Manufacturer:: Vishay Siliconix

Series:: TrenchFET®

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 4.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 3A, 10V

Vgs(th) (Max) @ Id:: 2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 16 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 620 pF @ 20 V

FET Feature:: -

Power Dissipation (Max):: 3W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3 (TO-236)

SQ2319CES-T1_GE3 FAQ

1.How can I place an order for SQ2319CES-T1_GE3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SQ2319CES-T1_GE3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SQ2319CES-T1_GE3 reliable?

The price and inventory of SQ2319CES-T1_GE3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SQ2319CES-T1_GE3 is usually 5 days.

3.What payment methods are accepted for SQ2319CES-T1_GE3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SQ2319CES-T1_GE3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SQ2319CES-T1_GE3?

SQ2319CES-T1_GE3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SQ2319CES-T1_GE3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SQ2319CES-T1_GE3?

For technical support, including SQ2319CES-T1_GE3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SQ2319CES-T1_GE3 requirements.

6.How does Aetrix verify that SQ2319CES-T1_GE3 is sourced from the original manufacturer or authorized distributors?

All SQ2319CES-T1_GE3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SQ2319CES-T1_GE3 meets industry standards.

7.What is the process for return or replacement of SQ2319CES-T1_GE3?

All SQ2319CES-T1_GE3 units undergo pre-shipment inspection (PSI). If there is an issue with SQ2319CES-T1_GE3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SQ2319CES-T1_GE3 part is unused and in its original packaging.

Return procedure for SQ2319CES-T1_GE3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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